CN112602167A - 薄膜形成装置及使用其的薄膜形成方法 - Google Patents
薄膜形成装置及使用其的薄膜形成方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 180
- 238000000034 method Methods 0.000 title claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 134
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 133
- 239000010703 silicon Substances 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000012535 impurity Substances 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 106
- 238000010926 purge Methods 0.000 claims description 58
- 238000002347 injection Methods 0.000 claims description 28
- 239000007924 injection Substances 0.000 claims description 28
- 238000000231 atomic layer deposition Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000004381 surface treatment Methods 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000000746 purification Methods 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种薄膜形成装置和使用其的薄膜形成方法,其能够通过在薄膜形成装置的处理腔室中划分反应空间,从而在第一空间中在衬底上形成硅薄膜并在第二空间中通过使用等离子体对在第一空间中形成的硅薄膜的表面进行处理来改善硅薄膜的膜质量。通过根据本公开的薄膜形成装置和使用其的薄膜形成方法,在图案复杂化且图案深度增大的趋势下,可以更有效地去除薄膜中的杂质,可以在图案上形成均匀的薄膜,并且可以使硅薄膜的晶体的晶粒尺寸均匀。
Description
技术领域
各个实施例总体上涉及一种薄膜形成装置和使用该薄膜形成装置的薄膜形成方法,并且更具体地,涉及一种能够通过在薄膜形成装置的处理腔室中划分反应空间以及因此在第一空间中在衬底上形成硅薄膜并且在第二空间中通过使用等离子体对在第一空间中形成的硅薄膜的表面进行处理来改善硅薄膜的膜质量的薄膜形成装置和使用该薄膜形成装置的薄膜形成方法。
背景技术
通常,为了在诸如半导体晶片、玻璃等的衬底上形成具有预定厚度的薄膜,使用了利用物理碰撞(诸如溅射)的物理气相沉积(PVD)、利用化学反应的化学气相沉积(CVD)以及原子层沉积(ALD)等薄膜形成方法。
对于CVD,可以使用大气压CVD(APCVD)、低压CVD(LPCVD)和等离子体增强CVD(PECVD)。其中,PECVD由于可以进行低温沉积并且薄膜形成速度快的优点而被广泛使用。
另外,正在增加ALD的使用,该ALD可以基本均匀地形成具有原子层厚度的精细图案并且具有优异的阶梯覆盖率。
图1是有助于说明根据常规技术的硅薄膜形成方法的流程图的示例的代表。
参考图1,根据常规技术的硅薄膜形成方法包括非晶硅膜形成步骤S10、等离子体后处理步骤S20以及净化(purge)和抽吸(pump)步骤S30。
在非晶硅膜形成步骤S10(其为在腔室中的衬底上形成非晶硅薄膜的步骤)中,通过在衬底上供应基于SixHy的单硅烷、双硅烷或三硅烷气体作为源气体,经由CVD或ALD工艺来形成硅薄膜。
在等离子体后处理步骤S20中,使用氧化亚氮等离子体、一氧化氮等离子体或氨等离子体等对非晶硅膜的顶表面部分进行表面处理。
然后,在净化和抽吸步骤S30中,将净化气体供应到腔室中以净化和抽吸腔室内部。
如上所述,在常规的硅薄膜形成方法中,在通过在腔室中执行非晶硅膜形成步骤S10而形成具有期望的厚度的硅膜之后,使用等离子体执行硅膜的表面处理。
然而,在形成有图案的衬底中,随着图案的线宽变窄并且纵横比增大,难以在图案上形成均匀的硅薄膜或使均匀的硅薄膜生长。
如此,随着图案的线宽变窄并且纵横比增大,难以通过常规技术中公知的薄膜形成方法在图案的顶部、侧面和底部形成具有均匀或适当的阶梯覆盖率的硅薄膜或使其生长。此外,基本上难以均匀地去除形成在图案的顶部、侧面和底部上的硅薄膜中的杂质。
因此,需要结构上的改进以在精细图案上形成均匀的薄膜并去除薄膜中的杂质,从而形成具有优异特性的薄膜。
发明内容
各种实施例涉及一种薄膜形成装置和使用该薄膜形成装置的薄膜形成方法,其能够通过在薄膜形成装置的处理腔室中划分反应空间以及因此在第一空间中在衬底上形成硅薄膜并且在第二空间中通过使用等离子体对在第一空间中形成的硅薄膜的表面进行处理来改善硅薄膜的膜质量。
此外,各种实施例涉及一种装置和方法,其在图案复杂化并且图案的深度增大的趋势下,能够通过去除薄膜中的杂质并且使硅薄膜的晶体的晶粒尺寸均匀而在图案上形成均匀的薄膜。
在一个实施例中,一种薄膜形成装置可以包括:处理腔室,其提供反应空间;衬底支撑件,其安装在处理腔室中并且支撑衬底;腔室盖,其覆盖处理腔室的顶部;以及气体注入模块,其安装在腔室盖的底表面上并向衬底注入处理气体,所述反应空间包括:第一空间,其用于在衬底上形成硅薄膜;以及第二空间,其用于通过使用等离子体来处理形成有硅薄膜的衬底的表面。
在一个实施例中,一种薄膜形成方法可以包括:硅薄膜形成步骤,其通过在处理腔室中的第一空间中在衬底上供应硅源气体来形成硅薄膜;第一净化气体供应步骤,其供应第一净化气体;等离子体表面处理步骤,其通过在处理腔室中的第二空间中使用等离子体来处理硅薄膜的表面,以去除硅薄膜中的杂质或使硅薄膜的晶粒尺寸均匀;以及第二净化气体供应步骤,其供应第二净化气体。
在一个实施例中,一种薄膜形成方法可以包括:等离子体预处理步骤,其通过在处理腔室中的第二空间中使用等离子体来处理衬底的表面,以去除形成在表面上的自然氧化物膜或包含在衬底的表面中的杂质;第二净化气体供应步骤,其供应第二净化气体;硅薄膜形成步骤,其通过在处理腔室中的第一空间中在衬底上供应硅源气体来形成硅薄膜;第一净化气体供应步骤,其供应第一净化气体;等离子体表面处理步骤,其通过在处理腔室中的第二空间中使用等离子体来处理硅薄膜的表面,以去除硅薄膜中的杂质或使硅薄膜的晶粒尺寸均匀;以及第二净化气体供应步骤,其供应第二净化气体。
在根据本公开的实施例的薄膜形成装置和使用该薄膜形成装置的薄膜形成方法中,通过划分所述薄膜形成装置的反应空间,从而在第一空间中在衬底上形成硅薄膜或使硅薄膜生长,并在第二空间中通过使用等离子体对在第一空间中形成的硅薄膜的表面进行处理,可以去除硅薄膜中的杂质,并且可以使硅薄膜的晶体的晶粒尺寸均匀化,由此提供了可以获得具有优异特性的硅薄膜的优势。
附图说明
图1是有助于说明根据常规技术的硅薄膜形成方法的流程图的示例的代表。
图2是有助于说明根据本公开实施例的薄膜形成装置的腔室中的平面结构的视图的示例的代表。
图3是沿图2的线A-A截取的截面图,其示意性地示出了腔室。
图4是有助于说明根据本公开的实施例的薄膜形成方法的流程图的示例的代表。
图5是有助于说明根据本公开的另一实施例的薄膜形成方法的流程图的示例的代表。
具体实施方式
在下文中,将参考附图详细描述各种实施例,以使实施例所属领域的技术人员可以容易地实施所述实施例。在附图中呈现的附图标记之中,相同的附图标记表示相同的构件。
在描述本公开时,当确定对已知的相关技术的详细描述可能使本公开的要点模糊不清时,将省略其详细描述。
尽管诸如第一和第二的术语可以用于描述各种组件,但是这些组件不受术语的限制,并且这些术语仅用于将组件与其他组件区分开。
图2是有助于说明根据本公开的实施例的薄膜形成装置的腔室中的平面结构的视图的示例的代表,以及图3是沿图2的线A-A截取的截面图,其示意性地示出了所述腔室。
参考图2和图3,根据本公开实施例的薄膜形成装置200包括:处理腔室210,其提供反应空间201;衬底支撑件220,其安装在处理腔室210中并支撑衬底W;腔室盖230,其覆盖处理腔室210的顶部;以及气体注入模块240,其安装在腔室盖230的底表面上,并向衬底W注入处理气体。
处理腔室210与腔室盖230一起形成反应空间201,并在其中容纳有衬底支撑件220和气体注入模块240。
反应空间201包括第一空间S1和第二空间S2,在第一空间S1中在衬底W上形成硅薄膜,在第二空间S2中通过使用等离子体对形成有所述硅薄膜的衬底W的表面进行处理。
衬底支撑件220支撑多个衬底W,并且在绕着位于其下方的旋转轴222旋转的同时将衬底W定位在第一空间S1和第二空间S2中。
第一空间S1对应于硅形成区域,在该硅形成区域中,通过化学气相沉积(CVD)、原子层沉积(ALD)或选择性外延生长在衬底W上形成硅薄膜。
第二空间S2对应于等离子体处理区域,在该等离子体处理区域中,使形成在衬底W上的硅薄膜暴露于惰性气体的等离子体中,从而去除在硅薄膜中的杂质或使硅薄膜的晶体的晶粒尺寸均匀。
向衬底W注入处理气体的气体注入模块240被设置在衬底支撑件220上方和腔室盖230下方。
气体注入模块240包括源气体注入部件241至245、等离子体气体注入部件246以及净化气体注入部件247和248。
源气体注入部件241至245在第一空间S1中向衬底W注入硅源气体,从而在衬底W上形成硅薄膜。在源气体注入部件241至245中,除了硅源气体之外,诸如氢气、氩气或氮气的载气可以与硅源气体一起被引入,并且可以被注入到衬底W上。
等离子体气体注入部件246在第二空间S2中向衬底W注入等离子体气体。对于所述等离子体气体,可以使用氢气(H2)、氮气(N2)、氩气(Ar)和惰性气体中的至少一种气体。
净化气体注入部件247和248在第一空间S1与第二空间S2之间注入净化气体,从而将第一空间S1与第二空间S2分隔开。通过从净化气体注入部件247、248注入的净化气体,将其上放置有多个衬底W的衬底支撑件220之上的反应空间201划分为作为硅形成区域的第一空间S1和作为等离子体处理区域的第二空间S2。
虽然未在图中示出,但是在第一空间S1与第二空间S2之间注入净化气体从而去除衬底W之上残留的源气体的区域可以被定义为第一净化空间,并且在第二空间S2与第一空间S1之间注入净化气体从而去除衬底W上残留的等离子体气体的区域可以被定义为第二净化空间。
第一空间S1、第一净化空间、第二空间S2和第二净化空间对应于在物理上分隔开的空间。此外,第一空间S1、第一净化空间、第二空间S2和第二净化空间可以是依据时间分隔开的空间,其中随着时间不同而执行硅形成、净化、等离子体表面处理和净化。
当氮气(N2)被分解或激发成自由基时,它可以用作掺杂剂,该掺杂剂为形成硅薄膜或使硅薄膜生长中的杂质,从而可能对膜质量产生不利影响。因此,在使用氮气(N2)作为硅源气体或等离子体气体的载气时需要谨慎。
图2和图3示出了薄膜形成装置200包括:多个源气体注入部件241至245,其在第一空间S1中注入硅源气体以在衬底W上形成硅薄膜;一个等离子体气体注入部件246,其在第二空间S2中注入等离子体气体;以及两个净化气体注入部件247、248,其注入将第一空间S1与第二空间S2分隔开的净化气体。然而,应注意,可以适当地调整源气体注入部件、等离子体气体注入部件和净化气体注入部件的数量。
另外,根据情况需要,也可以将多个源气体注入部件241至245之中的一些替换为注入反应气体的反应气体注入部件。
图4是有助于说明根据本公开的一个实施例的薄膜形成方法的流程图的示例的代表。
参考图4,根据本公开的实施例的薄膜形成方法包括硅薄膜形成步骤S410、第一净化气体供应步骤S420、等离子体表面处理步骤S430、第二净化气体供应步骤S440和薄膜厚度检查步骤S450。
在硅薄膜形成步骤S410中,随着处理腔室中的衬底支撑件的旋转,当放置在衬底支撑件上的衬底通过作为硅形成区域的第一空间时,硅源气体被注入,从而在衬底的顶部上形成硅薄膜。
此时形成的薄膜可以包括包含硅的氧化物膜、氮氧化物膜或氮化物膜,或者可以包括在光刻工艺中用作硬掩模的SOH膜。
硅薄膜形成步骤S410可以包括通过化学气相沉积(CVD)、原子层沉积(ALD)或选择性外延生长在衬底上形成硅薄膜的步骤。
在形成非晶硅薄膜的情况下,可以同时或顺序地向衬底供应硅源气体和反应气体,使得仅硅原子被吸附到衬底上或形成在衬底上。
可以在比形成非晶硅薄膜时更高的温度下形成晶体硅薄膜,并且所形成的晶体的晶粒尺寸可以根据工艺温度或其他条件而变化。
另一方面,在使单晶硅薄膜生长的情况下,可以向衬底供应硅源气体和用作还原气体的反应气体,以使硅晶体在衬底上生长。
形成在作为第一空间S1的硅形成区域中的硅薄膜可以是硅单层膜或具有与其相似的厚度的硅薄膜。除了硅之外,此时形成的硅薄膜中还可以包含少量的杂质。此外,在衬底上硅薄膜的晶体的晶粒尺寸可能不均匀,并且可能存在局部未形成硅的区域。因此,需要对形成在衬底上的硅薄膜的表面进行处理的工艺。
在第一净化气体供应步骤S420中,注入净化气体,从而去除残留在衬底上的硅源气体。此后,当已通过硅形成区域的衬底通过作为等离子体处理区域的第二空间S2时,使形成在衬底上的硅薄膜暴露于氢气、氮气、氩气或其他惰性气体的等离子体中。
在等离子体表面处理步骤S430中,可以通过氢气、氮气、氩气或其他惰性气体的等离子体对硅薄膜的表面进行处理,从而可以去除吸附到硅薄膜的杂质或包含在硅薄膜中的杂质。
具体地,氢气等离子体可以有效地用于去除可能残留在硅薄膜中的杂质(诸如氧或碳)。此外,通过氢气等离子体,可以使形成在衬底上的硅薄膜的晶体的晶粒尺寸均匀,或者可以控制晶粒尺寸的变化。
在第二净化气体供应步骤S440中,注入净化气体,并去除残留在衬底上的等离子体气体。
然后,通过检查形成在衬底上的硅薄膜的厚度(S450),重复上述流程直到形成具有期望厚度的硅薄膜。
此外,根据情况需要,在硅薄膜形成步骤S410中,可以在硅薄膜形成的同时或之后执行将杂质注入到硅薄膜中的步骤。当其上形成了硅薄膜并且对其执行了注入杂质的工艺的衬底通过作为等离子体处理区域的第二空间S2时,通过利用等离子体(诸如氢气等离子体)去除形成在衬底上的硅薄膜或硅薄膜中的杂质,可以调整杂质的浓度。
图5是有助于说明根据本公开的另一实施例的薄膜形成方法的流程图的示例的代表。
参考图5,根据本发明的另一实施例的硅薄膜形成方法包括等离子体预处理步骤S510、第二净化气体供应步骤S520、硅薄膜形成步骤S530、第一净化气体供应步骤S540、等离子体表面处理步骤S550、第二净化气体供给步骤S560和薄膜厚度检查步骤S570。
在硅薄膜形成步骤S530之前,通过首先在等离子体处理区域中对衬底执行等离子体预处理步骤S510,可以预先去除在衬底上形成的自然氧化膜或者吸附到衬底表面或包含在衬底表面中的杂质。
然后,在通过供应净化气体去除残留的等离子体气体之后(S520),执行硅薄膜形成步骤S530。
由于除了在硅薄膜形成步骤S530之前执行等离子体预处理步骤S510和第二净化气体供应步骤S520之外,图5所示的方法与图4所示的方法相同,所以在此将省略对其他工艺的详细描述。
从以上描述显而易见的是,伴随着图案复杂化并且图案深度增大的趋势,在如本公开的实施例的情况下,在一个处理腔室中划分反应空间,在第一空间中形成硅薄膜并在第二空间中执行等离子体表面处理,可以更有效地去除薄膜中的杂质,并且可以在图案上形成均匀的薄膜。
此外,可以均匀地去除形成在图案的顶部、底部和侧面上的硅薄膜中的杂质,并且可以使硅薄膜的晶体的晶粒尺寸均匀。
尽管上面已经描述了各种实施例,但是本领域技术人员将理解,所描述的实施例仅是示例性的。因此,本文中所描述的公开不应基于所描述的实施例受到限制。
Claims (17)
1.一种薄膜形成装置,包括:
处理腔室,其提供反应空间;
衬底支撑件,其安装在所述处理腔室中并且支撑衬底;
腔室盖,其覆盖所述处理腔室的顶部;以及
气体注入模块,其安装在所述腔室盖的底表面上,并向所述衬底注入处理气体,
所述反应空间包括:
第一空间,其用于在所述衬底上形成硅薄膜;以及
第二空间,其用于通过使用等离子体来处理形成有所述硅薄膜的所述衬底的表面,
其中,所述衬底通过所述衬底支撑件的旋转而被移动到所述第一空间和所述第二空间。
2.根据权利要求1所述的薄膜形成装置,其中,所述第一空间是硅形成区域,在所述硅形成区域中,通过化学气相沉积CVD、原子层沉积ALD或选择性外延生长在所述衬底上形成所述硅薄膜。
3.根据权利要求2所述的薄膜形成装置,其中,所述硅薄膜为非晶硅薄膜、晶体硅薄膜或单晶硅薄膜。
4.根据权利要求1所述的薄膜形成装置,其中,所述第二空间是等离子体处理区域,在所述等离子体处理区域中,使形成在所述衬底上的所述硅薄膜暴露于惰性气体的等离子体中,以去除所述硅薄膜中的杂质或使所述硅薄膜的晶粒尺寸均匀。
5.根据权利要求1所述的薄膜形成装置,其中,所述气体注入模块包括:
源气体注入部件,其在所述第一空间中向所述衬底注入源气体;
等离子体气体注入部件,其在所述第二空间中向所述衬底注入等离子体气体;以及
净化气体注入部件,其在所述第一空间与所述第二空间之间注入净化气体。
6.根据权利要求5所述的薄膜形成装置,还包括:
反应气体注入部件,其在所述第一空间中向所述衬底注入反应气体。
8.根据权利要求5所述的薄膜形成装置,
其中,所述源气体注入部件包括多个源气体注入器,以及
其中,所述多个源气体注入器注入相同的源气体或不同的源气体。
9.一种薄膜形成方法,包括:
硅薄膜形成步骤,其通过在处理腔室中的第一空间中在衬底上供应硅源气体来形成硅薄膜;
第一净化气体供应步骤,其供应第一净化气体;
等离子体表面处理步骤,其通过在所述处理腔室中的第二空间中使用等离子体来处理所述硅薄膜的表面,以去除所述硅薄膜中的杂质或使所述硅薄膜的晶粒尺寸均匀;以及
第二净化气体供应步骤,其供应第二净化气体。
10.根据权利要求9所述的薄膜形成方法,其中,所述硅薄膜形成步骤包括形成非晶硅薄膜的步骤、形成晶体硅薄膜的步骤和使单晶硅生长的步骤之中的任意一个步骤。
11.根据权利要求9所述的薄膜形成方法,其中,所述硅薄膜形成步骤包括通过化学气相沉积CVD、原子层沉积ALD或选择性外延生长在所述衬底上形成所述硅薄膜。
12.根据权利要求9所述的薄膜形成方法,其中,所述等离子体表面处理步骤包括通过使所述硅薄膜暴露于等离子体中来处理所述硅薄膜的表面,所述等离子体为氢气H2、氮气N2、氩气Ar和惰性气体中的至少一种气体。
13.根据权利要求9所述的薄膜形成方法,还包括:
薄膜厚度检查步骤,其用于检查形成在所述衬底上的所述硅薄膜的厚度,
其中,重复执行所述硅薄膜形成步骤至所述第二净化气体供应步骤,直到形成具有所期望的厚度的所述硅薄膜为止。
14.一种薄膜形成方法,包括:
等离子体预处理步骤,其通过在处理腔室中的第二空间中使用等离子体来处理衬底的表面,以去除形成在所述表面上的自然氧化物膜或包含在所述衬底的所述表面中的杂质;
第二净化气体供应步骤,其供应第二净化气体;
硅薄膜形成步骤,其通过在所述处理腔室中的第一空间中在所述衬底上供应硅源气体来形成硅薄膜;
第一净化气体供应步骤,其供应第一净化气体;
等离子体表面处理步骤,其通过在所述处理腔室中的所述第二空间中使用等离子体来处理所述硅薄膜的表面,以去除所述硅薄膜中的杂质或使所述硅薄膜的晶粒尺寸均匀;以及
第二净化气体供应步骤,其供应第二净化气体。
15.根据权利要求14所述的薄膜形成方法,还包括:
薄膜厚度检查步骤,其检查形成在所述衬底上的所述硅薄膜的厚度;
其中,重复执行所述硅薄膜形成步骤至所述第二净化气体供应步骤,直到形成具有期望的厚度的所述硅薄膜为止。
16.根据权利要求1所述的薄膜形成装置,其中,所述处理腔室还包括:
第一净化空间,其为在所述第一空间与所述第二空间之间注入净化气体以去除残留在所述衬底上的源气体的区域;以及
第二净化空间,其为在所述第二空间与所述第一空间之间注入净化气体以去除残留在所述衬底上的等离子体气体的区域。
17.根据权利要求16所述的薄膜形成装置,其中,所述第一空间、所述第一净化空间、所述第二空间和所述第二净化空间是在物理上或依据时间分隔开的空间。
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