TWI826506B - 薄膜形成裝置及使用其的薄膜形成方法 - Google Patents
薄膜形成裝置及使用其的薄膜形成方法 Download PDFInfo
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- TWI826506B TWI826506B TW108129912A TW108129912A TWI826506B TW I826506 B TWI826506 B TW I826506B TW 108129912 A TW108129912 A TW 108129912A TW 108129912 A TW108129912 A TW 108129912A TW I826506 B TWI826506 B TW I826506B
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- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 127
- 239000010703 silicon Substances 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 239000010408 film Substances 0.000 claims abstract description 66
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 119
- 238000004140 cleaning Methods 0.000 claims description 59
- 238000002347 injection Methods 0.000 claims description 39
- 239000007924 injection Substances 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 238000000231 atomic layer deposition Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- -1 and therefore Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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Abstract
本發明涉及一種薄膜形成裝置和使用其的薄膜形成方法,該薄膜形成裝置和薄膜形成方法通過在薄膜形成裝置的製程腔室中劃分反應空間,從而在第一空間中的基板上形成矽薄膜,並在第二空間中通過使用電漿處理在第一空間中形成的矽薄膜表面,能夠改善矽薄膜的膜質量。通過根據本發明的薄膜形成裝置和使用該薄膜形成裝置的薄膜形成方法,具有圖案複雜且圖案深度增加的趨勢,可以更有效地去除薄膜中的雜質,可以在圖案上形成均勻的薄膜,並且可以使矽薄膜的晶體的晶粒尺寸均勻。
Description
各種實施例通常涉及一種薄膜形成裝置和使用它們的薄膜形成方法,更具體地,涉及一種能夠改善矽薄膜的膜質量的薄膜形成裝置和薄膜形成方法,通過在薄膜形成裝置的製程腔室中劃分反應空間,從而在第一空間中的基板上形成矽薄膜,並在第二空間中通過使用電漿處理在第一空間中形成的矽薄膜表面。
通常,為了在如半導體晶片、玻璃等的基板上形成具有預定厚度的薄膜,使用了利用如濺射的物理碰撞的物理氣相沉積(PVD)、利用化學反應的化學氣相沉積(CVD)、原子層沉積(ALD)等的薄膜形成方法。
作為化學氣相沉積(CVD),可以使用常壓化學氣相沉積(APCVD),低壓化學氣相沉積(LPCVD)和電漿增強化學氣相沉積(PECVD)。其中,由於電漿增強化學氣相沉積可以進行低溫沉積並且薄膜形成速度快的優點,所以電漿增強化學氣相沉積被廣泛使用。
同時,使用可以基本均勻地形成具有原子層厚度的精細圖案並且具有優異的階梯覆蓋的原子層沉積正在增加。
圖1是根據習知技術的矽薄膜形成方法的流程圖的示例,用於幫助說明。
參照圖1,根據習知技術的矽薄膜形成方法包含非晶矽膜形成步驟S10、電漿後處理步驟S20和清潔和泵送步驟S30。
在非晶矽膜形成步驟S10中,作為在腔室中的基板上形成非晶矽薄膜的步驟,通過化學氣相沉積或原子層沉積製程,通過在基板上提供基於SixHy的單矽烷氣體、二矽烷氣體或三矽烷氣體作為源氣體形成矽薄膜。
在電漿後處理步驟S20中,使用一氧化二氮電漿、一氧化氮電漿、氨氣電漿等對非晶矽膜的頂部表面部進行表面處理。
然後,在清潔和泵送步驟S30中,將清潔氣體供應到腔室中以吹掃和泵送腔室內部。
如上所述,在習知的矽薄膜形成方法中,通過在腔室中執行非晶矽膜形成步驟S10來形成具有所需厚度的矽膜之後,使用電漿對矽膜進行表面處理。
然而,在形成有圖案的基板中,隨著圖案的線寬變窄並且縱橫比增加,難以在圖案上形成或生長均勻的矽薄膜。
如此,隨著圖案的線寬變窄且縱橫比增加,通過習知技術中通常已知的薄膜形成方法難以在圖案的頂部、側部和底部上形成或生長具有均勻或適當的階梯覆蓋的矽薄膜。而且,基本上很難均勻地除去形成在圖案的頂部、側部和底部上的矽薄膜中的雜質。
因此,需要結構上的改進以在精細圖案上形成均勻的薄膜並去除薄膜中的雜質,從而形成具有優異特性的薄膜。
各種實施例涉及一種能夠改善矽薄膜的膜質量的薄膜形成裝置和使用它們的薄膜形成方法,通過在薄膜形成裝置的製程腔室中劃分反應空間,從而在第一空間中的基板上形成矽薄膜,並在第二空間中通過使用電漿處理在第一空間中形成的矽薄膜表面。
此外,各種實施例涉及一種能夠通過去除薄膜中的雜質而在圖案上形成均勻的薄膜的裝置和方法,具有圖案複雜且圖案深度增加的趨勢,並且可以使矽薄膜的晶體的晶粒尺寸均勻。
在一實施例中,薄膜形成裝置可以包含:一製程腔室,提供一反應空間;一基板支撐件,安裝在該製程腔室中並支撐一基板;一腔室蓋,覆蓋該製程腔室的一頂部;以及一氣體注入模組,安裝在該腔室蓋的一底表面上,並向該基板注入一製程氣體,該反應空間包含:一第一空間以及一第二空間,第一空間用於形成一矽薄膜在該基板上;第二空間用於藉由使用電漿處理已經形成有該該矽薄膜的該基板的一表面。
在一實施例中,薄膜形成方法可以包含:一矽薄膜形成步驟,通過在一製程腔室中的一第一空間中的一基板上提供一矽源氣體來形成一矽薄膜;一第一清潔氣體供應步驟,供應一第一清潔氣體;一電漿表面處理步驟,通過在該製程腔室中的一個第二空間中使用電漿處理該矽薄膜的一表面,以去除該矽薄膜中的雜質或使該矽薄膜的晶粒尺寸均勻;以及一第二清潔氣體供應步驟,供應一第二清潔氣體。
在一實施例中,薄膜形成方法可以包含:一電漿預處理步驟,通過在一製程腔室中的一第二空間中使用電漿處理一基板的一表面,以去除該基板的該表面上形成的一天然氧化膜或該表面中所包含的雜質;第二清潔氣體供應步驟,供應一第二清潔氣體;矽薄膜形成步驟,通過在該製程腔室中的該第一空間中的該基板上提供一矽源氣體來形成一矽薄膜;第一清潔氣體供應步驟,供應一第一清潔氣體;一電漿表面處理步驟,通過在該製程腔室的該第二空間中的電漿處理該矽薄膜的一表面,以除去該矽薄膜中的雜質或使該矽薄膜的晶粒尺寸均勻;以及第二清潔氣體供應步驟,供應一第二清潔氣體。
在根據本發明的實施例的薄膜形成裝置和使用該薄膜形成裝置的薄膜形成方法中,通過劃分薄膜形成裝置的反應空間,從而在第一空間中在基板上形成或生長矽薄膜,並且在第二空間中通過使用電漿處理在第一空間中形成的矽薄膜的表面可以去除矽薄膜中的雜質且可以使矽薄膜的晶體的晶粒尺寸均勻,由此提供的優點在於可以獲得具有優異特性的矽薄膜。
在下文中,將參考圖式詳細描述各種實施例,以使實施例所屬領域的通常知識者可以容易地執行實施例。在圖式中呈現的圖式標記中,相同的圖式標記表示相同的構件。
在描述本發明時,當確定已知的相關技術的詳細描述可能使本發明的要點模糊時,將省略其詳細描述。
儘管如第一和第二的術語可以用於描述各種部件,但是這些部件不受術語的限制,並且這些術語僅用於將部件與其他部件區分開。
圖2是顯示根據本發明的實施例的有助於說明薄膜形成裝置的腔室中的平面結構的視圖的示例,且圖3是沿著圖2的線A-A截取的截面圖,示意性地示出了腔室。
參考圖2和圖3,根據本發明的實施例的薄膜形成裝置200包含提供反應空間201的製程腔室210、安裝在製程腔室210中並支撐基板W的基板支撐件220、覆蓋製程腔室210頂部的腔室蓋230以及安裝在腔室蓋230的底表面上並注入製程氣體到基板W的氣體注入模組240。
製程腔室210與腔室蓋230一起形成反應空間201,並在其中容納基板支撐件220和氣體注入模組240。
反應空間201包含第一空間S1和第二空間S2,在第一空間S1中在基板W上形成矽薄膜,在第二空間S2中利用電漿對具有形成矽薄膜的基板W的表面進行處理。
基板支撐件220支撐多個基板W,並且基板支撐件220將基板W定位在第一空間S1和第二空間S2中,同時繞著位於基板支撐件220下方的旋轉軸222旋轉。
第一空間S1對應於矽形成區域,其中通過化學氣相沉積(CVD)、原子層沉積(ALD)或選擇性磊晶生長在基板W上形成矽薄膜。
第二空間S2對應於電漿處理區域,其中在基板W上形成的矽薄膜暴露於惰性氣體的電漿中,從而去除了矽薄膜中的雜質或使矽薄膜的晶體的晶粒尺寸均勻。
將製程氣體注入到基板W的氣體注入模組240設置在基板支撐件220的上方和腔室蓋230的下方。
氣體注入模組240包含源氣體注入部241、242、243、244和245、電漿氣體注入部246以及清潔氣體注入部247、248。
源氣體注入部241至245在第一空間S1中將矽源氣體注入到基板W,從而在基板W上形成矽薄膜。在源氣體注入部241至245中,除了包含矽源氣體以外,還可以將氫、氬或氮等載氣與矽源氣體一起導入,並注入到基板W上。
電漿氣體注入部246在第二空間S2中將電漿氣體注入到基板W。作為電漿氣體,可以使用氫(H2
)、氮(N2
)、氬(Ar)和惰性氣體中的至少一種氣體。
清潔氣體注入部247和清潔氣體注入部248在第一空間S1和第二空間S2之間注入清潔氣體,從而將第一空間S1和第二空間S2分開。通過從清潔氣體注入部247和清潔氣體注入部248注入的清潔氣體,將放置有多個基板W的基板支撐件220上的反應空間201劃分為第一空間S1和第二空間S2,該第一空間S1是矽形成區域,並且第二空間S2是電漿處理區域。
儘管在圖中未示出,但是在第一空間S1和第二空間S2之間注入了清潔氣體的區域可以定義為第一清潔空間,從而在第一清潔空間去除殘留在基板W上的源氣體。在第二空間S2與第一空間S1之間注入清潔氣體的另一個區域可以被定義為第二清潔空間,從而在第二清潔空間去除殘留在基板W上的電漿氣體。
第一空間S1、第一清潔空間、第二空間S2和第二清潔空間對應於物理上分開的空間。此外,第一空間S1、第一清潔空間、第二空間S2和第二清潔空間可以是在時間上分離的空間,其中矽的形成、清潔、電漿表面處理和清潔是以不同的時間執行。
當氮氣(N2
)分解或激發成自由基時,它可能在矽膜的形成或生長中充當雜質的摻雜劑,從而可能對膜質量產生不利影響。因此,在使用氮氣(N2
)作為矽源氣體或電漿氣體的載氣時需要謹慎。
圖2和圖3示出了薄膜形成裝置200包含多個源氣體注入部(源氣體注入部241至源氣體注入部245),所述多個源氣體注入部(源氣體注入部241至源氣體注入部245)注入矽源氣體,以在第一空間S1中的基板W上形成矽薄膜。一個電漿氣體注入部246將電漿氣體注入第二空間S2,兩個清潔氣體注入部247和清潔氣體注入部248將劃分第一空間S1和第二空間S2的清潔氣體注入。然而,應當注意,可以適當地調整源氣體注入部、電漿氣體注入部和清潔氣體注入部的數量。
另外,根據場合的需要,可以將多個源氣體注入部241至245中的一些替換為注入反應氣體的反應氣體注入部。
圖4是顯示根據本發明的實施例的用於幫助解釋薄膜形成方法的流程圖的示例。
參照圖4,根據本發明實施例的薄膜形成方法包含矽薄膜形成步驟S410、第一清潔氣體供應步驟S420、電漿表面處理步驟S430、第二清潔氣體供應步驟S440和薄膜厚度檢查步驟S450。
在矽薄膜形成步驟S410中,隨著旋轉在製程腔室中的基板支撐件,放置在基板支撐件上的基板通過作為矽形成區域的第一空間,同時矽源氣體注入,從而在基板的頂部上形成矽薄膜。
此時形成的薄膜可以包含氧化物膜、氧氮化物膜或包含矽的氮化物膜,或者可以包含在光刻製程中用作硬光罩的旋轉塗佈硬質遮罩(Spin on hardmask,SOH)膜。
矽薄膜形成步驟S410可以包含通過化學氣相沉積(CVD)、原子層沉積(ALD)或選擇性磊晶生長在基板上形成矽薄膜的步驟。
在形成非晶矽薄膜的情況下,可以同時或順序地將矽源氣體和反應氣體提供至基板,使得只有矽原子被吸附到基板上或在基板上形成。
可以在比形成非晶矽薄膜時更高的溫度下形成多晶矽薄膜,並且所形成的晶體的晶粒尺寸可以根據製程溫度或其他條件而變化。
另一方面,在生長單晶矽薄膜的情況下,可以將矽源氣體和用作還原氣體的反應氣體提供給基板,以使矽晶體在基板上生長。
在作為第一空間S1的矽形成區域中形成的矽薄膜可以是矽單層膜或具有與其相似的厚度的矽薄膜。除了包含矽之外,此時形成的矽薄膜中還可能包含少量雜質。此外,在基板上的矽薄膜的晶體的晶粒尺寸可能不均勻,並且可能局部存在未形成矽的區域。因此,需要對在基板上形成的矽薄膜進行表面處理。
在第一清潔氣體供應步驟S420中,注入清潔氣體,並從而去除殘留在基板上的矽源氣體。此後,當通過矽形成區域的基板通過作為電漿處理區域的第二空間S2時,形成在基板上的矽薄膜暴露於氫、氮、氬或其他惰性氣體的電漿中。
在電漿表面處理步驟S430中,可以通過氫、氮、氬或其他惰性氣體的電漿處理矽薄膜的表面,因此,可以去除吸附到或包含在矽薄膜中的雜質。
特別地,氫電漿可以有效地用於去除可能殘留在矽薄膜中的雜質,例如氧或碳。此外,通過氫電漿,可以使形成在基板上的矽薄膜的晶體的晶粒尺寸均勻,或者可以控制尺寸的變化。
在第二清潔氣體供應步驟S440中,注入清潔氣體,並去除殘留在基板上的電漿氣體。
然後,通過檢查形成在基板上的矽薄膜的厚度(即薄膜厚度檢查步驟S450),重複上述製程步驟,直到形成具有所需厚度的矽薄膜為止。
同時,根據場合需要,在矽薄膜形成步驟S410中,可以在形成矽薄膜的同時或之後進行將雜質摻入到矽薄膜中的步驟。當形成有矽薄膜在其上的基板通過作為電漿處理區域的第二空間S2時,若矽薄膜當中有雜質摻入,通過用電漿(例如氫電漿)除去形成在基板上的矽薄膜或矽薄膜中的雜質,可以調節雜質的濃度。
圖5是顯示根據本發明的另一實施例的用於幫助解釋薄膜形成方法的流程圖的示例。
參照圖5,根據本發明的另一實施例的矽薄膜形成方法包含電漿預處理步驟S510、第二清潔氣體供應步驟S520、矽薄膜形成步驟S530、第一清潔氣體供應步驟S540、電漿表面處理步驟S550、第二清潔氣體供應步驟S560和薄膜厚度檢查步驟S570。
在矽薄膜形成步驟S530之前,首先對電漿處理區域中的基板執行電漿預處理步驟S510,可以預先去除形成在基板上的天然氧化膜或吸附到基板表面或包含在基板表面中的雜質。
然後,在通過提供清潔氣體去除殘留的電漿氣體之後(S520),執行矽薄膜形成步驟S530。
除了在矽薄膜形成步驟S530之前執行電漿預處理步驟S510和第二清潔氣體供應步驟S520之外,圖5所示的方法與圖4所示的方法相同,在此將省略其他製程的描述。
從以上描述中顯而易見的是,具有圖案複雜且圖案深度增加的趨勢,在如本發明的實施例中的情況下,在一個製程腔室中劃分反應空間。在第一空間中形成矽薄膜,然後在第二空間中進行電漿表面處理,可以更有效地去除薄膜中的雜質,並且可以在圖案上形成均勻的薄膜。
另外,可以均勻地去除在圖案的頂部、底部和側部上形成的矽薄膜的雜質,並且可以使矽薄膜晶體的晶粒尺寸均勻。
儘管上面已經描述了各種實施例,但是本領域通常知識者將理解,所描述的實施例僅是示例性的。因此,本發明在此描述基於所描述的實施例不應被限制。
200:薄膜形成裝置
201:反應空間
210:製程腔室
220:基板支撐件
222:旋轉軸
230:腔室蓋
240:氣體注入模組
241、242、243、244、245:源氣體注入部
246:電漿氣體注入部
247、248:清潔氣體注入部
W:基板
S1:第一空間
S2:第二空間
圖1是顯示用於幫助解釋根據習知技術的矽薄膜形成方法的流程圖的示例。
圖2是根據本發明的實施例的用於幫助說明薄膜形成裝置的腔室中的平面結構的視圖的示例的圖示。
圖3是沿著圖2的線A-A截取的截面圖,示意性地示出了腔室。
圖4是顯示根據本發明的實施例的用於幫助解釋薄膜形成方法的流程圖的示例。
圖5是顯示根據本發明的另一實施例的用於幫助說明薄膜形成方法的流程圖的示例。
200:薄膜形成裝置
201:反應空間
210:製程腔室
220:基板支撐件
230:腔室蓋
242:源氣體注入部
247:清潔氣體注入部
W:基板
S1:第一空間
S2:第二空間
Claims (15)
- 一種薄膜形成裝置,包含:一製程腔室,提供一反應空間;一基板支撐件,安裝在該製程腔室中並支撐一基板;一腔室蓋,覆蓋該製程腔室的一頂部;以及一氣體注入模組,安裝在該腔室蓋的一底表面上,並且該氣體注入模組向該基板注入一製程氣體,該反應空間包含:一第一空間,用於形成一矽薄膜在該基板上;以及一第二空間,用於藉由使用電漿處理已經形成有該矽薄膜的該基板的一表面,以及處理該基板的一表面以去除該基板的該表面上形成的一天然氧化膜或該表面中所包含的雜質,其中該基板通過該基板支撐件的旋轉而移動至該第一空間和該第二空間。
- 如請求項1所述之薄膜形成裝置,其中該第一空間是一矽形成區域,於該矽形成區域通過化學氣相沉積(CVD)、原子層沉積(ALD)或選擇性磊晶生長在該基板上形成該矽薄膜。
- 如請求項2所述之薄膜形成裝置,其中該矽薄膜為一非晶矽薄膜,一多晶矽薄膜或一單晶矽薄膜。
- 如請求項1所述之薄膜形成裝置,其中該第二空間是一電漿處理區域,在該基板上形成的該矽薄膜於該電漿處理區域中暴露於一惰性氣體的電漿,以去除該矽薄膜中的雜質或使該矽薄膜的晶粒尺寸達到均勻。
- 如請求項1所述之薄膜形成裝置,其中該氣體注入模組包含:一源氣體注入部,在該第一空間中注入一源氣體至該基板;一電漿氣體注入部,在該第二空間中注入一電漿氣體至該基板;以及一清潔氣體注入部,在該第一空間和該第二空間之間注入一清潔氣體。
- 如請求項5述之薄膜形成裝置,更包含:一反應氣體注入部,在該第一空間中注入一反應氣體至該基板。
- 如請求項1所述之薄膜形成裝置,其中該矽薄膜的厚度為1Å至20Å。
- 如請求項5述之薄膜形成裝置,其中該源氣體注入部包含多個源氣體注入器,以及其中該些源氣體注入器注入相同或不同的源氣體。
- 一種薄膜形成方法,包含:一電漿預處理步驟,通過在一製程腔室中的一第二空間中使用電漿處理一基板的一表面,以去除該基板的該表面上形成的一天然氧化膜或該表面中所包含的雜質;一第二清潔氣體供應步驟,供應一第二清潔氣體;一矽薄膜形成步驟,通過在該製程腔室中的一第一空間中的該基板上提供一矽源氣體來形成一矽薄膜;一第一清潔氣體供應步驟,供應一第一清潔氣體; 一電漿表面處理步驟,通過在該製程腔室中的該第二空間中使用電漿處理該矽薄膜的一表面,以去除該矽薄膜中的雜質或使該矽薄膜的晶粒尺寸均勻;以及一第二清潔氣體供應步驟,供應該第二清潔氣體。
- 如請求項9述之薄膜形成方法,其中該矽薄膜形成步驟包含形成非晶矽薄膜的步驟,形成一多晶矽薄膜的步驟和生長單晶矽的步驟中的任一個。
- 如請求項9述之薄膜形成方法,其中該矽薄膜形成步驟包含通過化學氣相沉積(CVD)、原子層沉積(ALD)或選擇性磊晶生長在該基板上形成該矽薄膜。
- 如請求項9述之薄膜形成方法,其中該電漿表面處理步驟包含通過將該矽薄膜暴露於氫(H2)、氮(N2)、氬(Ar)和惰性氣體中的至少一種氣體的電漿來處理該矽薄膜的該表面。
- 如請求項9述之薄膜形成方法,更包含:一薄膜厚度檢查步驟,檢查在該基板上形成的該矽薄膜的一厚度,其中重複該矽薄膜形成步驟至該第二清潔氣體供應步驟,直到形成具有所需厚度的該矽薄膜。
- 如請求項1所述之薄膜形成裝置,其中該製程腔室更包含:一第一清潔空間,作為在該第一空間和該第二空間之間注入一清潔氣體以去除殘留在該基板上的一源氣體的一區域;以及 一第二清潔空間,作為在該第二空間和該第一空間之間注入一清潔氣體以去除殘留在該基板上的一電漿氣體的一區域。
- 如請求項14述之薄膜形成裝置,其中該第一空間、該第一清潔空間、該第二空間和該第二清潔空間是物理上或時間上分開的空間。
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