CN1123925C - 经过改善的腔式球状栅格阵列电路封装 - Google Patents

经过改善的腔式球状栅格阵列电路封装 Download PDF

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CN1123925C
CN1123925C CN99125350A CN99125350A CN1123925C CN 1123925 C CN1123925 C CN 1123925C CN 99125350 A CN99125350 A CN 99125350A CN 99125350 A CN99125350 A CN 99125350A CN 1123925 C CN1123925 C CN 1123925C
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bonding agent
chip
radiator
encapsulation
bonding
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CN1262524A (zh
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E·P·迪布勒
E·A·约翰逊
小R·A·菲利普斯
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International Business Machines Corp
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International Business Machines Corp
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    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
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Abstract

提供一种经过改善的结合系统，其中，将金属散热器接合到半导体芯片上。使用一种双粘接剂系统，其中，第1粘接剂显示出高的结合强度，第2粘接剂显示出高的热导率。

Description

经过改善的腔式球状栅格阵列电路封装
技术领域
本发明一般涉及改善芯片与散热器的互连结构的热性能的方法，具体地说，涉及改善带有球状栅格阵列的互连结构的热性能的方法。如已知的那样，现代的集成电路封装往往包括粘附到金属散热器或热沉上的半导体芯片。在典型的情况下，将金属散热器粘附到由环氧树脂或其它塑料制成的电路化的芯片载体上。该电路化的载体中的开口使芯片的背面或非有源的一侧直接粘附到该散热器上，上述的粘附一般用环氧树脂来进行。使用一团某种其它的环氧树脂来密封该芯片以及在载体上将芯片与引线电连接起来的金属线。
背景技术
该芯片载体/散热器组合体可与“球状栅格阵列”(“BGA”)一起来提供。如已知的那样，BGA可使器件连接到电子系统的其它器件上并与其它器件发生联系。与使用引脚将器件与另一个电路卡连接的双排(dual-in-line)封装不同，BGA采用焊锡凸点的阵列来进行该连接。引脚连接难以在非常高的密度下进行，但采用BGA可做到这一点。另外，BGA的电路线长度比引脚连接的电路线长度短，这一点对于用于高速缓冲存储器的SRAM(静态随机存取存储器)来说特别重要。BGA优于PGA的另外的优点是电容和每个I/O的成本较低。
其基座由塑料构成的BGA常常被选择用于热性能重要的应用中。塑料一般来说是较差的热导体。为了改善芯片中的冷却状况，BGA可具有一个腔体，使芯片在“芯片朝下”的方位上安装。该BGA的“芯片朝下”的方位提供了芯片/BGA组合体与散热器的直接连接，该散热器作为该直接连接的一部分，被粘接到支撑芯片的载体的顶侧。一般来说，该散热器往往可起到该器件的唯一的散热元件的作用，但可将热沉粘附到该散热器上以提高散热性能。
为了牢固地将芯片结合到金属散热器上，使用了粘接剂。由于该金属散热器的功能是将由芯片的工作产生的热量发散出去，故该粘接剂要具有高的热导率。该粘接剂也必须显示出对于散热器的金属的高的结合强度。
粘接剂必须具有下述的性质：1)良好的热导率；2)良好的芯片与粘接剂的结合强度；以及3)良好的金属与粘接剂的强度。相对说，只有很少的几种粘接剂能使上述每一种性质达到理想程度。随着芯片尺寸的增大，就尺寸和功耗来说，这些要求变得越来越苛刻。因此，单选一种粘接剂来满足所有这些要求变得非常困难。
显示出高热导率的粘接剂是被充满填料的、并且一般来说在芯片与散热器之间的机械的粘接性很差。另外，散热器一般由铜制成、为保持其表面光洁度可镀有其它金属或被进行氯化处理。这些表面处理常常降低了与粘接剂的界面结合强度。为了减少粘接性的降低，可附加一层具有较好的粘接性的粘接剂。该附加的粘接剂层由于增加了总的接合体的厚度和外加了界面电阻必定使该接合体的热阻增加。
因此，需要用一种新的带腔式球状栅格阵列的和经过改善的结合系统，该系统可适应较高的应力而不明显增加封装的热阻，同时制造简便而廉价。
发明内容
按照本发明，提供一种经过改善的结合系统用于将金属散热器结合到半导体芯片上，其中，所形成的接合体显示出强的芯片粘附和接合体界面的机械的完整性，同时改善了接合体的热性能。由于单一的粘接剂不能总是在粘接两种不同的表面并提供高的热导率和高的结合强度方面实现最佳化，故使用了两种粘接剂的系统，其中，每一种粘接剂具有其独特的性质，并以避免传统的粘接剂的问题的方式来应用。在本发明的一个实施例中，第1粘接剂具有较低的热导率，但具有较高的机械结合强度，将该第1粘接剂粘接到在芯片与诸如散热器的散热元件粘接的高的界面应力的区域上。第2粘接剂具有较高的热导率，但具有较低的结合强度，将该第2粘接剂粘接到芯片其余的连接表面区域上。
这样，在一个实施例中，散热器的一部分连接表面涂敷第1粘接剂以提供强的结合性。直接与芯片邻接配置的该连接表面第2部分不被该第1粘接剂覆盖。在该散热器的第2部分处涂敷可提高热导率的第2粘接剂。当芯片被粘附到散热器上时，该芯片的连接表面的一部分粘接到第1粘接剂上，而芯片的其余部分粘接到第2粘接剂上。可建立这样一种芯片与散热器的连接表面，其中，界面的一部分显示出高的结合强度和柔性，而第2粘接剂提供经过改善的从芯片至散热器的热导率。
附图简述
图1示出本发明的第1实施例的剖面图；
图2示出本发明的第2实施例的剖面图；以及
图3示出本发明的一个芯片由腔式球状栅格阵列承载的实施例的剖面图。
具体实施方式
本发明提供一种特别是在使用和形成具有球状栅格阵列的集成电路封装方面在散热器与一个或多个芯片之间的经过改善的互连结构。本发明用于将芯片粘接到散热器上，其中，使用了两种粘接剂，可得到良好的结合强度和低的热阻。具体地说，将粘接剂涂敷到散热器的连接表面上，使得芯片连接表面的一部分与较低的热导率的粘接剂接触并粘接，同时，该芯片的连接表面的另一部分与较高的热导率的粘接剂接触并粘接。
图1表示本发明的经过改善的散热器与芯片的组合体，概略地示于10。散热器12用于耗散在芯片工作期间产生的热量。散热器12由诸如铜之类的高热导率的金属制成，但也可考虑用其它已知的高热导率的材料。例如，可使用镍或铝，其中，铝一般可进行诸如氧化或其后转换为铬的表面处理。在图1中还可看到，将芯片14粘接到散热器上。
在芯片14的工作期间产生热量。该热量必须从芯片14耗散掉，以便该芯片继续正常地工作。在散去热量的同时，芯片14必须牢固地结合在散热器12上。否则，在芯片与散热器之间形成的接合体将开裂、发生疲劳并最终失效。为了得到牢固地将散热器12与芯片14粘附在一起且不降低导热性能的接合体，使用两种粘接剂，并只涂敷到散热器12的某个区域上。使用显示出低的热导率但高的结合强度的第1粘接剂。一种这样的粘接剂是Masterbond Supreme 10 AOHT，该粘接剂最好与铜粘接。由于其高的结合强度，可显著地减少在散热器与第1粘接剂之间的界面的剥离，可较好地适应界面应力。
第2粘接剂18是诸如Ablebond 965-1L的高热导率的粘接剂。该粘接剂和其它高充填的环氧树脂可方便地将在芯片14的工作期间产生的热量传导到散热器12上。尽管第2粘接剂18因其以热导率著称，但这种类型的粘接剂不粘接金属散热器12和第1粘接剂16。因此，涂敷第1粘接剂16以提供强的结合，而涂敷第2粘接剂18以改善热导率。
如在图1中看到的那样，将第1和第2粘接剂涂敷到散热器的连接表面20上，使两种粘接剂与散热器12和芯片14接触，以形成具有强的结合和良好的热导率的组合体。为了形成该组合体，除了第2粘接剂18已涂敷的区域之外，散热器的连接表面20上覆盖了第1粘接剂16。在图1的实施例中，第1粘接剂16的覆盖区域围绕第2粘接剂18的覆盖区域。这样，当将芯片14粘接到散热器12上时，芯片14的连接表面22的外缘部分与第1粘接剂16接触并与其粘接，而芯片14的连接表面22其余的中心部分与覆盖了第2粘接剂18的散热器12的连接表面20的区域粘接。
如在图2中看到的那样，在另一个实施例中，将第1粘接剂16涂敷在散热器12的连接表面20的一部分上，留下未被覆盖的散热器连接表面20的内部以容纳第2粘接剂18。相应地覆盖指定给第2粘接剂的连接区域，将芯片14与粘接剂接触。这样来涂敷第2粘接剂18，以便在芯片14定位时第2粘接剂18的一部分溢出到第1粘接剂16的顶部，或被挤压到第1粘接剂16的顶部表面上。这样，在本实施例中，芯片14主要与第2粘接剂18接触并粘接到其上，第2粘接剂18又与散热器12和第2粘接剂18的顶部表面粘接。
图3示出本发明的特定的应用。如在图3中看到的那样，示出了与球状栅格阵列一起使用的经过改善的散热器与芯片的互连结构，其中，为了清楚起见，略去了粘接剂层，但应了解如上述那样使用了粘接剂。球状栅格阵列(“BGA”)是常规的表面安装型产品。球状栅格阵列常常用于高带宽元件的表面安装。在热性能是重要的应用中，使用带有腔28的封装。
如在图3中可清楚地看到的那样，用常规的方法将BGA24粘附在芯片载体26上。芯片载体26可以是诸如FR4的玻璃环氧树脂或其它已知的载体材料。芯片载体26有一个穿过其本身的腔，使得芯片能粘附在散热器12上。
为了形成本发明的改善的腔式球状栅格阵列，以如上所述的方式将芯片14结合到散热器12上。将高强度的第1粘接剂16(图1和2)接合到芯片的连接表面的一部分上，高热导率的粘接剂接合到芯片的连接表面的剩下的部分上。在本实施例中，散热器12是金属板。优选地，散热器12是被承载在载体26上的接触底座。然后，对芯片14进行引线，通过结合引线30连接到芯片载体的印刷电路板上，该结合引线30可用一团密封剂32密封以作保护。该团密封材料也有助于将所述芯片粘附到所述芯片载体上。这样，本发明提供了具有改善了热性能的BGA。
用于将半导体芯片粘接到热沉上的热粘接剂是众所周知的，任何这样的粘接剂均可按照本发明来用以形成第1粘接剂16和第2粘接剂18的每一种。众所周知的热粘接剂的例子是环氧树脂、丙烯酸树脂和硅酮树脂。这些树脂一般或多或少用诸如银、氧化铝、硝酸铝或其它粒子、纤维或混合物等导热性充填剂充填，以便改善热导率。当然，应这样来选择第1粘接剂16的粘接剂，使其增强与散热器12的结合强度，因为，如上所述，这样做将有利于芯片或管心14与散热器12之间总体结合强度的改进。
对于选作形成第1粘接剂16和第2粘接剂18的粘接剂的结合强度或热导率没有特殊的要求，这是因为，在特定的封装设计中遇到的界面应力和热负载的条件将根据待结合的芯片和散热器的性质和尺寸而改变。但重要的是，所选择的第2粘接剂18相对于第1粘接剂16显示出增强的热导率，但必须承认，第2粘接剂18的结合强度将由于该差别而很可能只能作折衷。第2粘接剂18的热导率至少比第1粘接剂16的热导率高约10％是较为理想的，至少比第1粘接剂16的热导率高约25％则更为理想，至少比第1粘接剂16的热导率高约50％则还要理想。
因为按照本发明使用两种分立的粘接剂，故在选择第1粘接剂时，与其它情况相比，可较少地关心其热导率。同样，在选择第2粘接剂时，与其它情况相比，可较少地关心其结合强度。结果，在设计用于特定的应用中专门的粘接剂系统时，可具有较大的灵活性。这是因为，每种粘接剂系统可按照涂敷两种不同的粘接剂的位置以定做的方式来设计，以便提供准确的结合强度，由此使整个粘接剂接合体的热导率为最大。再者，在选择用于特定的应用的粘接剂方面可得到较大的余地，这是因为，不象现有技术的设计那样，两种粘接剂需要良好的结合强度以及良好的热导率。因此，与以往相比，可发展更强和更便宜的结合系统。
在本发明的优选的实施例中，从相同的树脂族中选择在特定的集成电路封装中的第1粘接剂和第2粘接剂。树脂族的意思是指，例如，环氧、酚醛、聚酰胺、聚酯、丙烯酸、硅酮、聚酰亚胺等。
在一个更为优选的实施例中，由环氧树脂粘接剂来形成第1粘接剂和第2粘接剂。环氧树脂粘接剂，特别是热环氧树脂粘接剂(即，显示出高热导率的环氧树脂粘接剂)在现有技术中是众所周知的。已知这些粘接剂中的一些粘接剂具有与半导体芯片的高的结合强度，特别是硅制作的芯片而已知这些粘接剂中的另一些粘接剂具有与金属的高的结合强度。这些粘接剂的任何一种都可用于本发明。合适的环氧粘接剂的例子是：965 Epoxy、8213 Epoxy和240 Epoxy。Epoxy 965是可从Ablestik购得的众所周知的充填银金属的热环氧树脂。Epoxy8213是显示出高玻璃转变温度和低吸湿收率的溴化环氧甲氧甲酚酚醛树脂，它可有选择地充填铜粉以得到被增强的热导率和被减少的热膨胀系数。Epoxy 240是基于触变性溶剂的环氧酚醛树脂。
虽然只描述了本发明的几个实施例，但并不是旨在限定后附的权利要求或将其限制于这样的细节。对于本领域的专业人员来说，另外的优点和变更是显而易见的。因而，本发明在其最广泛的方面不限制于已示出的和已描述的特定的细节、代表性的装置或说明性的实施例。因此，在不偏离申请人总的发明思想的精神或范围的前提下，可偏离这些细节。

Claims (10)

1.一种集成电路封装，包括：在其上具有芯片连接表面的半导体芯片、具有散热器连接表面的金属散热器和粘接所述芯片与所述散热器的粘接剂接合体，其特征在于，所述接合体包括：
第1粘接剂，粘附到所述芯片连接表面上的第1部分和所述散热器连接表面上的对应部分；以及
第2粘接剂，粘附到所述芯片连接表面上的第2部分和所述散热器连接表面上的对应部分，其中，所述第2粘接剂显示出比所述第1粘接剂高的热导率和比所述第1粘接剂低的结合强度。
2.如权利要求1中所述的封装，其特征在于，还包括：
载体，粘附到所述散热器上，该载体具有穿过其本身的一个腔；
球状栅格阵列，粘附到所述芯片载体上，并具有穿过其本身的一个腔，以便与所述载体腔发生联系来形成接受所述芯片的芯片接受腔；以及结合底座，将所述芯片粘附到所述芯片载体上。
3.如权利要求2中所述的封装，其特征在于：
还通过一团密封材料将所述芯片粘附到所述芯片载体上。
4.如权利要求3中所述的封装，其特征在于：
所述散热器是被承载在所述载体上的接触底座。
5.如权利要求1中所述的封装，其特征在于：
所述第1粘接剂层由环氧树脂形成。
6.如权利要求5中所述的封装，其特征在于：
所述第2粘接剂层由环氧树脂形成。
7.一种集成电路封装，包括：半导体芯片、金属散热器和在其间的一团粘接剂，其特征在于：
所述一团粘接剂包括第1粘接剂和具有比所述第1粘接剂高的热导率和比所述第1粘接剂低的结合强度的第2粘接剂，
所述一团粘接剂界定了第1区域和第2区域，在所述第1区域中所述第1粘接剂将所述芯片粘接到所述散热器上，在所述第2区域中所述第2粘接剂粘接到所述散热器上，并与粘接在所述芯片上的第1粘接剂粘接。
8.如权利要求7中所述的封装，其特征在于：
所述第2粘接剂的热导率至少比所述第1粘接剂高10％。
9.如权利要求8中所述的封装，其特征在于：
所述第2粘接剂的热导率至少比所述第1粘接剂高25％。
10.如权利要求9中所述的封装，其特征在于：
所述第2粘接剂的热导率至少比所述第1粘接剂高50％。
CN99125350A 1999-01-27 1999-12-17 经过改善的腔式球状栅格阵列电路封装 Expired - Fee Related CN1123925C (zh)

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