CN112385024A - 扇出封装方法及扇出封装板 - Google Patents

扇出封装方法及扇出封装板 Download PDF

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CN112385024A
CN112385024A CN201880095500.4A CN201880095500A CN112385024A CN 112385024 A CN112385024 A CN 112385024A CN 201880095500 A CN201880095500 A CN 201880095500A CN 112385024 A CN112385024 A CN 112385024A
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substrate
packaging
sides
fan
layer
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CN112385024B (zh
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胡川
燕英强
郭跃进
皮迎军
刘俊军
普拉克·爱德华
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Shenzhen Xiuyi Investment Development Partnership LP
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    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Structure Of Printed Boards (AREA)
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Abstract

在基板(100)的一侧或两侧制作电路图案(110A，110B)，将电子零件(200A，200B)安装于所述基板(100)的一侧或两侧，在基板(100)的两侧制作封装层(300)，所述基板(100)两侧的所述封装层(300)将所述基板(100)、所述电路图案(110A，110B)、和所述电子零件(200A，200B)包封在内，所述封装层(300)为热塑性材料制成；其中，所述基板(100)设有过孔(120)，所述过孔(120)将所述基板(100)的两侧连通，在基板(100)的两侧制作封装层(300)时，所述封装层(300)的部分穿过所述过孔(120)，所述基板(100)两侧的所述封装层(300)通过所述过孔(120)相连接。减小封装材料的耗散系数，信号损耗小，能够很好地应用于高频射频器件的封装。

Description

PCT国内申请，说明书已公开。

Claims (17)

  1. PCT国内申请，权利要求书已公开。
CN201880095500.4A 2018-10-11 2018-10-11 扇出封装方法及扇出封装板 Active CN112385024B (zh)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN113078070A (zh) * 2021-03-30 2021-07-06 无锡闻泰信息技术有限公司 器件塑封方法
CN115910821A (zh) * 2023-03-10 2023-04-04 广东省科学院半导体研究所 芯片粒精细互连封装结构及其制备方法

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CN110416139B (zh) * 2019-09-11 2021-08-31 京东方科技集团股份有限公司 一种转移载板、其制作方法及发光二极管芯片的转移方法
US11557706B2 (en) * 2020-09-30 2023-01-17 Ford Global Technologies, Llc Additive manufacturing of electrical circuits

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US20020180024A1 (en) * 2001-05-29 2002-12-05 Siliconware Precision Industries Co., Ltd., Taiwan R.O.C. Semiconductor package and method for fabricating the same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113078070A (zh) * 2021-03-30 2021-07-06 无锡闻泰信息技术有限公司 器件塑封方法
CN115910821A (zh) * 2023-03-10 2023-04-04 广东省科学院半导体研究所 芯片粒精细互连封装结构及其制备方法

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CN112385024B (zh) 2023-11-10
WO2020073265A1 (zh) 2020-04-16
US11710646B2 (en) 2023-07-25

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