CN112271135B - 一种晶圆级Au金属膜层湿法腐蚀图形化的方法 - Google Patents
一种晶圆级Au金属膜层湿法腐蚀图形化的方法 Download PDFInfo
- Publication number
- CN112271135B CN112271135B CN202011026812.5A CN202011026812A CN112271135B CN 112271135 B CN112271135 B CN 112271135B CN 202011026812 A CN202011026812 A CN 202011026812A CN 112271135 B CN112271135 B CN 112271135B
- Authority
- CN
- China
- Prior art keywords
- solution
- metal film
- wafer
- silicon wafer
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002184 metal Substances 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 29
- 238000000059 patterning Methods 0.000 title claims abstract description 13
- 238000001039 wet etching Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 33
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000003381 stabilizer Substances 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 1
- 229920002223 polystyrene Polymers 0.000 claims 1
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 239000010931 gold Substances 0.000 description 24
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 12
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011734 sodium Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- -1 potassium ferricyanide Chemical compound 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66098—Breakdown diodes
- H01L29/66113—Avalanche diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Abstract
本发明公开一种晶圆级Au金属膜层湿法腐蚀图形化的方法,包括以下步骤:S1、清洗硅片,去除硅片表面污垢;S2、在硅片表面磁控溅射Au金属膜层;S3、采用光刻工艺,在Au金属膜层表面制备IMPATT二极管管芯电极图形;S4、配置腐蚀溶液,腐蚀溶液由体积比1:1:1的Na2S2O3溶液、CH4N2S溶液与K3Fe(CN)6溶液混合构成;Na2S2O3溶液、CH4N2S溶液以及K3Fe(CN)6溶液的浓度均为10%;通过腐蚀溶液按照湿法腐蚀工艺对Au金属膜层进行图形化腐蚀;S5、采用有机溶剂去除光刻胶,得到IMPATT二极管管芯电极;该方法提高了晶圆级Au膜层图形化腐蚀工艺后的线条控制精度,且实施成本较低,减小环境污染。
Description
技术领域
本发明涉及毫米波雪崩二极管管芯制备技术领域,具体是一种晶圆级Au金属膜层湿法腐蚀图形化的方法。
背景技术
雪崩二极管是六十代中期开始发展起来的一种新型的微波半导体功率器件,全名是碰撞电离雪崩渡越时间二极管,即“Impact ionization avalanche transit time”(IMPATT) ,通常称为IMPATT管或IMPATT二极管,它是雪崩倍增效应和渡越时间效应两个物理过程所形成的相位延迟的负阻有源器件。IMPATT二极管的工作原理是利用半导体器件结构中的载流子(电子与空穴)碰撞电离和渡越时间两种物理效应之间的相互作用,使二极管在很高的频率下产生较大的微波功率输出。IMPATT二极管在高于60GHz直至400GHz的频率其功率电平比其它类型二极管高,如硅基微波三极管、砷化镓及磷化铟Gunn体效应二极管、硅基CMOS器件及化合半导体HEMT器件等。当前硅基雪崩二极管的振荡频率能覆盖30~300GHz的整个毫米波波段,其最高振荡频率目前超过400GHz。
IMPATT二极管电极承担着n+/p+区金属欧姆接触、器件的散热体、器件的机械承载体作用,电极结构对器件的电学连接、器件的散热能力(器件的热阻)、器件的动态参数、机械强度及器件的可靠性等都有重要的影响。需要从上述多个方面去研究和设计器件的金属电极结构,要研究Au膜层层厚度及图形化方法,研究金属层厚度均匀性控制技术与线宽精度的控制等技术。
目前,管芯制备存在的问题是:一、电极Au膜层图形化湿法工艺稳定性较差,直接影响降低器件电性能及可靠性能;二、现有碘配碘化钾腐蚀溶液腐蚀速率较慢,均匀性不可控,腐蚀完成后线条形貌不佳,线宽精度难以控制;三、现有碘配碘化钾腐蚀溶液对人身体及环境会造成极大的危害,回收处理费用极高。
发明内容
本发明的目的在于提供一种晶圆级Au金属膜层湿法腐蚀图形化的方法,该方法提高了晶圆级Au膜层图形化腐蚀工艺后的线条控制精度,且实施成本较低,减小环境污染。
本发明解决其技术问题所采用的技术方案是:
一种晶圆级Au金属膜层湿法腐蚀图形化的方法,包括以下步骤:
S1、清洗硅片,去除硅片表面污垢;
S2、在硅片表面磁控溅射Au金属膜层;
S3、采用光刻工艺,在Au金属膜层表面制备IMPATT二极管管芯电极图形;
S4、配置腐蚀溶液,腐蚀溶液由体积比1:1:1的Na2S2O3溶液、CH4N2S溶液与K3Fe(CN)6溶液混合构成;Na2S2O3溶液、CH4N2S溶液以及K3Fe(CN)6溶液的浓度均为10%;
通过腐蚀溶液按照湿法腐蚀工艺对Au金属膜层进行图形化腐蚀;
S5、采用有机溶剂去除光刻胶,得到IMPATT二极管管芯电极。
进一步的,步骤S1清洗时采用浓硫酸和过氧化氢的混合试剂进行清洗,浓硫酸和过氧化氢的体积比为3:1;清洗后再采用氢氟酸去除硅片表面的自然氧化层;然后用去离子水冲洗;最后氮气保护离心干燥。
进一步的,步骤S2磁控溅射时间10分钟,溅射电压0.5kv,溅射电流0.5A,Au金属膜层厚度 5000±100Å。
进一步的,步骤S3光刻工艺按以下步骤执行:
S31、匀胶,
选用正性光刻胶,先在硅片表面用HMDS进行增粘处理,然后旋转涂胶,胶厚1.0±0.1μm;
S32、前烘,
将涂覆好光刻胶的硅片放入热板中,温度设置为90±5℃,时间为10±2min;
S33、曝光,
用光刻掩模版在光刻机上进行图形套准曝光,套准精度为±0.05μm;
S34、显影,
采用5%KOH溶液作为显影液进行显影,显影温度25±1℃,显影时间1±0.1min;然后去离子水冲洗离心干燥,去离子水电阻率≥15MΩ.cm;
S35、后烘,
将显影后的硅片放入烘箱中,第一区域温度:120±5℃,第二区域温度:130±5℃,第三区域温度150±5℃,时间为20±2min。
进一步的,步骤S5有机溶剂采用体积比1:1的C3H7ON与NH2(CH2)OH混合溶液,C3H7ON与NH2(CH2)OH浓度均为99.90%;去除光刻胶时的加热温度为120±5℃,时间为15±1min;然后去离子水冲洗离心干燥,去离子水电阻率≥15MΩ.cm。
本发明的有益效果是,硫脲腐蚀金是一项低毒腐蚀金的工艺,硫脲溶液腐蚀Au具有腐蚀速率高,均匀性好,线宽精度控制较高,毒性较小,有害影响因素较小等特点;从硫脲本身的微观结构出发,依据量子化学理论,系统研究了硫脉分子的结构,稳定剂的结构及其与碱性硫脲稳定性之间的关系,找到了一种能使硫脲在碱性介质中稳定的更有效的稳定剂硫代硫酸钠,减少了硫脲在腐蚀过程中的消耗,铁氰化钾K3Fe(CN) 6作为氧化剂,在碱性条件下硫脲腐蚀Au的过程中,Au也必须首先氧化成Au+,然后Au+与硫脉反应生成金的配阳离子;本方法提高了晶圆级Au膜层图形化腐蚀工艺后的线条控制精度,且实施成本较低,减小环境污染。
附图说明
下面结合附图和实施例对本发明进一步说明:
图1是本发明步骤S1的示意图;
图2是本发明步骤S2的示意图;
图3是本发明步骤S3的示意图;
图4是本发明步骤S4的示意图;
图5是本发明步骤S5的示意图。
具体实施方式
本发明提供一种晶圆级Au金属膜层湿法腐蚀图形化的方法,包括以下步骤:
S1、如图1所示,清洗硅片1,去除硅片表面污垢;
采用N型(111)2寸硅晶圆片,电阻率2-5Ω.cm,厚度350μm,清洗时采用浓硫酸和过氧化氢的混合试剂进行清洗,浓硫酸和过氧化氢的体积比为3:1;清洗后再采用氢氟酸去除硅片表面的自然氧化层;然后用去离子水冲洗;最后氮气保护离心干燥;
S2、结合图2所示,在硅片1表面磁控溅射Au金属膜层2;
磁控溅射时间10分钟,溅射电压0.5kv,溅射电流0.5A,Au金属膜层厚度 5000±100Å;
S3、采用光刻工艺,在Au金属膜层表面制备IMPATT二极管管芯电极图形3;
光刻工艺按以下步骤执行:
S31、匀胶,
选用正性光刻胶,先在硅片表面用HMDS进行增粘处理,然后旋转涂胶,胶厚1.0±0.1μm;
S32、前烘,
将涂覆好光刻胶的硅片放入热板中,温度设置为90±5℃,时间为10±2min;
S33、曝光,
用光刻掩模版在光刻机上进行图形套准曝光,套准精度为±0.05μm;
S34、显影,
采用5%KOH溶液作为显影液进行显影,显影温度25±1℃,显影时间1±0.1min;然后去离子水冲洗离心干燥,去离子水电阻率≥15MΩ.cm;
S35、后烘,
将显影后的硅片放入烘箱中,第一区域温度:120±5℃,第二区域温度:130±5℃,第三区域温度150±5℃,时间为20±2min;
S4、配置腐蚀溶液,腐蚀溶液由体积比1:1:1的Na2S2O3溶液、CH4N2S溶液与K3Fe(CN)6溶液混合构成;Na2S2O3溶液、CH4N2S溶液以及K3Fe(CN)6溶液的浓度均为10%;
通过腐蚀溶液按照湿法腐蚀工艺对Au金属膜层进行图形化腐蚀;
S5、采用有机溶剂去除光刻胶,得到IMPATT二极管管芯电极4;
有机溶剂采用体积比1:1的C3H7ON与NH2(CH2)OH混合溶液,C3H7ON与NH2(CH2)OH浓度均为99.90%;去除光刻胶时的加热温度为120±5℃,时间为15±1min;然后去离子水冲洗离心干燥,去离子水电阻率≥15MΩ.cm。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制;任何熟悉本领域的技术人员,在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰,均仍属于本发明技术方案保护的范围内。
Claims (5)
1.一种晶圆级Au金属膜层湿法腐蚀图形化的方法,其特征在于,包括以下步骤:
S1、清洗硅片,去除硅片表面污垢;
S2、在硅片表面磁控溅射Au金属膜层;
S3、采用光刻工艺,在Au金属膜层表面制备IMPATT二极管管芯电极图形;
S4、配置腐蚀溶液,腐蚀溶液由体积比1:1:1的Na2S2O3溶液、CH4N2S溶液与K3Fe(CN)6溶液混合构成;Na2S2O3溶液、CH4N2S溶液以及K3Fe(CN)6溶液的浓度均为10%,Na2S2O3作为稳定剂,使CH4N2S在碱性介质中更加稳定;
通过腐蚀溶液按照湿法腐蚀工艺对Au金属膜层进行图形化腐蚀;
S5、采用有机溶剂去除光刻胶,得到IMPATT二极管管芯电极。
2.根据权利要求1所述的一种晶圆级Au金属膜层湿法腐蚀图形化的方法,其特征在于,步骤S1清洗时采用浓硫酸和过氧化氢的混合试剂进行清洗,浓硫酸和过氧化氢的体积比为3:1;清洗后再采用氢氟酸去除硅片表面的自然氧化层;然后用去离子水冲洗;最后氮气保护离心干燥。
3.根据权利要求1所述的一种晶圆级Au金属膜层湿法腐蚀图形化的方法,其特征在于,步骤S2磁控溅射时间10分钟,溅射电压0.5kv,溅射电流0.5A,Au金属膜层厚度 5000±100Å。
4.根据权利要求1所述的一种晶圆级Au金属膜层湿法腐蚀图形化的方法,其特征在于,
步骤S3光刻工艺按以下步骤执行:
S31、匀胶,
选用正性光刻胶,先在硅片表面用HMDS进行增粘处理,然后旋转涂胶,胶厚1.0±0.1μm;
S32、前烘,
将涂覆好光刻胶的硅片放入热板中,温度设置为90±5℃,时间为10±2min;
S33、曝光,
用光刻掩模版在光刻机上进行图形套准曝光,套准精度为±0.05μm;
S34、显影,
采用5%KOH溶液作为显影液进行显影,显影温度25±1℃,显影时间1±0.1min;然后去离子水冲洗离心干燥,去离子水电阻率≥15MΩ.cm;
S35、后烘,
将显影后的硅片放入烘箱中,第一区域温度:120±5℃,第二区域温度:130±5℃,第三区域温度150±5℃,时间为20±2min。
5.根据权利要求1所述的一种晶圆级Au金属膜层湿法腐蚀图形化的方法,其特征在于,步骤S5有机溶剂采用体积比1:1的C3H7ON与NH2(CH2)OH混合溶液,C3H7ON与NH2(CH2)OH浓度均为99.90%;去除光刻胶时的加热温度为120±5℃,时间为15±1min;然后去离子水冲洗离心干燥,去离子水电阻率≥15MΩ.cm。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011026812.5A CN112271135B (zh) | 2020-09-25 | 2020-09-25 | 一种晶圆级Au金属膜层湿法腐蚀图形化的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011026812.5A CN112271135B (zh) | 2020-09-25 | 2020-09-25 | 一种晶圆级Au金属膜层湿法腐蚀图形化的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112271135A CN112271135A (zh) | 2021-01-26 |
CN112271135B true CN112271135B (zh) | 2023-02-28 |
Family
ID=74348659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011026812.5A Active CN112271135B (zh) | 2020-09-25 | 2020-09-25 | 一种晶圆级Au金属膜层湿法腐蚀图形化的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112271135B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114300356B (zh) * | 2021-12-07 | 2024-03-19 | 华东光电集成器件研究所 | 一种用于雪崩二极管的微结构金属引脚制备方法 |
CN115181569B (zh) * | 2022-07-07 | 2023-05-09 | 湖北兴福电子材料股份有限公司 | 一种氧化硅的选择性蚀刻液 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1154015A (en) * | 1966-08-22 | 1969-06-04 | Photo Engravers Res Inst Inc | Etching of Printed Circuit Components |
JPS55156942A (en) * | 1979-05-28 | 1980-12-06 | Konishiroku Photo Ind Co Ltd | Dot etching solution |
US5900160A (en) * | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US6150279A (en) * | 1998-06-23 | 2000-11-21 | Ku; Amy | Reverse current gold etch |
CN1667140A (zh) * | 2004-03-10 | 2005-09-14 | 中南大学 | 一种稳定的碱性硫脲体系及其选择性浸金方法 |
CN103842553A (zh) * | 2011-09-30 | 2014-06-04 | 3M创新有限公司 | 图案化的基底的连续湿法蚀刻方法 |
CN107287437A (zh) * | 2016-10-24 | 2017-10-24 | 中南大学 | 一种减少硫代硫酸盐用量的浸金方法 |
CN109778194A (zh) * | 2019-03-22 | 2019-05-21 | 深圳市祺鑫天正环保科技有限公司 | 碱性蚀刻再生液的添加剂和碱性蚀刻再生液 |
CN110484724A (zh) * | 2019-08-27 | 2019-11-22 | 浙江工业大学 | 一种基于离子液体的浸金剂及浸金方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4778519A (en) * | 1987-02-24 | 1988-10-18 | Batric Pesic | Recovery of precious metals from a thiourea leach |
US20060266731A1 (en) * | 2005-05-31 | 2006-11-30 | Yu Steven Y | Etchant rinse method |
CN103276206B (zh) * | 2013-06-09 | 2014-07-02 | 中南大学 | 一种高效稳定的碱性硫脲体系用于浸金的方法 |
CN103935954B (zh) * | 2014-04-21 | 2015-10-28 | 陕西师范大学 | 利用自组装单分子膜对贵金属进行正性和负性刻蚀的方法 |
EP3817524A4 (en) * | 2018-06-26 | 2022-03-16 | DIC Corporation | METHOD OF MAKING A PRINTED CIRCUIT BOARD |
-
2020
- 2020-09-25 CN CN202011026812.5A patent/CN112271135B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1154015A (en) * | 1966-08-22 | 1969-06-04 | Photo Engravers Res Inst Inc | Etching of Printed Circuit Components |
JPS55156942A (en) * | 1979-05-28 | 1980-12-06 | Konishiroku Photo Ind Co Ltd | Dot etching solution |
US5900160A (en) * | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US6150279A (en) * | 1998-06-23 | 2000-11-21 | Ku; Amy | Reverse current gold etch |
CN1667140A (zh) * | 2004-03-10 | 2005-09-14 | 中南大学 | 一种稳定的碱性硫脲体系及其选择性浸金方法 |
CN103842553A (zh) * | 2011-09-30 | 2014-06-04 | 3M创新有限公司 | 图案化的基底的连续湿法蚀刻方法 |
CN107287437A (zh) * | 2016-10-24 | 2017-10-24 | 中南大学 | 一种减少硫代硫酸盐用量的浸金方法 |
CN109778194A (zh) * | 2019-03-22 | 2019-05-21 | 深圳市祺鑫天正环保科技有限公司 | 碱性蚀刻再生液的添加剂和碱性蚀刻再生液 |
CN110484724A (zh) * | 2019-08-27 | 2019-11-22 | 浙江工业大学 | 一种基于离子液体的浸金剂及浸金方法 |
Also Published As
Publication number | Publication date |
---|---|
CN112271135A (zh) | 2021-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112271135B (zh) | 一种晶圆级Au金属膜层湿法腐蚀图形化的方法 | |
JPH01105949A (ja) | トリアミンポジティブフォトレジストストリッピング組成物及びプレベーキング法 | |
CN102714157B (zh) | 旋涂配制剂以及剥离经离子注入的光致抗蚀剂的方法 | |
KR950007956B1 (ko) | Mis 구조전극의 형성방법 | |
CN105304703A (zh) | 基于石墨烯/硅的接触势垒场效应管及其制备方法 | |
CN109285913A (zh) | 低表面漏电流台面型光电探测器及其制作方法 | |
CN105070681A (zh) | 一种砷化镓衬底mHEMT有源区电学隔离方法 | |
CN104851788B (zh) | 一种砷化镓基晶体管的t型栅的制作方法 | |
CN105321808A (zh) | 一种可避免有机污染的cvd石墨烯fet器件制造方法 | |
CN103594445B (zh) | 一种w波段impatt二极管阻抗匹配引脚及其制备方法 | |
CN104882367B (zh) | 一种改善SiC MOSFET器件沟道迁移率的方法 | |
CN114300356B (zh) | 一种用于雪崩二极管的微结构金属引脚制备方法 | |
Mizutani et al. | High-speed enhancement-mode GaAs MESFET logic | |
CN113097073A (zh) | 一种场效应晶体管的制备方法 | |
JPH02196426A (ja) | ヒ化アルミニウムガリウムの選択エッチング法 | |
CN110137075A (zh) | 一种离子注入氧化实现自对准石墨烯晶体管的制造方法 | |
Li et al. | III-Nitride LED Chip Fabrication Techniques | |
JP7470458B2 (ja) | シリコン基板上のGaN/2次元AlNヘテロ接合整流器及びその製造方法 | |
CN111986988A (zh) | 一种更小线宽的光刻工艺 | |
CN101540297B (zh) | 单片集成增强/耗尽型GaAs MHEMT环形振荡器的制作方法 | |
JPH0139647B2 (zh) | ||
Brotherton et al. | Determination of surface‐and bulk‐generation currents in low‐leakage silicon MOS structures | |
WO2024004490A1 (ja) | 基板処理方法 | |
CN112909078B (zh) | 一种高压超快恢复二极管芯片及其制造方法 | |
CN108155267A (zh) | 一种基于肖特基-mos混合结构的光致负阻器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |