JPS55156942A - Dot etching solution - Google Patents

Dot etching solution

Info

Publication number
JPS55156942A
JPS55156942A JP6496079A JP6496079A JPS55156942A JP S55156942 A JPS55156942 A JP S55156942A JP 6496079 A JP6496079 A JP 6496079A JP 6496079 A JP6496079 A JP 6496079A JP S55156942 A JPS55156942 A JP S55156942A
Authority
JP
Japan
Prior art keywords
etching solution
dot etching
thiosulfate
dot
thioureas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6496079A
Other languages
Japanese (ja)
Inventor
Toyoaki Masukawa
Hisashi Ishikawa
Yutaka Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP6496079A priority Critical patent/JPS55156942A/en
Publication of JPS55156942A publication Critical patent/JPS55156942A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G03C5/26—Processes using silver-salt-containing photosensitive materials or agents therefor
    • G03C5/40—Chemically transforming developed images
    • G03C5/42—Reducing; Intensifying

Abstract

PURPOSE:To obtain a dot etching solution not causing environmental pollution and yelow staining on the photosensitive material processed and having superior storage stability, by mixng iodie ions (or thiourea) and thiosulfate with pH specified. CONSTITUTION:A dot etching solution contains thiosulfate and iodine ions in 1.4 mol/l or more (or thioureas in 0.6mol/l) with pH adjusted at or below 6 (preferably 5.5 or less). For example, sodium thiosulfate, 50-300g; sodium hydrogen sulfite, 5-30g; ammonium iodide, 250-600g (or thiourea, 50-100g); and water are mixed, and pH is adjusted to 5-3 to make a 1 liter dot etching solution. In addition, iodine ions may be used together with thioureas, but in this case, they are mixed in a concentration where the silver potential of the dot etching solution becomes or less than -460mV.
JP6496079A 1979-05-28 1979-05-28 Dot etching solution Pending JPS55156942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6496079A JPS55156942A (en) 1979-05-28 1979-05-28 Dot etching solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6496079A JPS55156942A (en) 1979-05-28 1979-05-28 Dot etching solution

Publications (1)

Publication Number Publication Date
JPS55156942A true JPS55156942A (en) 1980-12-06

Family

ID=13273110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6496079A Pending JPS55156942A (en) 1979-05-28 1979-05-28 Dot etching solution

Country Status (1)

Country Link
JP (1) JPS55156942A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112271135A (en) * 2020-09-25 2021-01-26 华东光电集成器件研究所 Wafer-level Au metal film wet etching patterning method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112271135A (en) * 2020-09-25 2021-01-26 华东光电集成器件研究所 Wafer-level Au metal film wet etching patterning method
CN112271135B (en) * 2020-09-25 2023-02-28 华东光电集成器件研究所 Wafer-level Au metal film wet etching patterning method

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