CN113097073A - 一种场效应晶体管的制备方法 - Google Patents
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- 230000005669 field effect Effects 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 229910021389 graphene Inorganic materials 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000001704 evaporation Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 5
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 229910003090 WSe2 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052961 molybdenite Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- 229910016021 MoTe2 Inorganic materials 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 3
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 241000251468 Actinopterygii Species 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 12
- 239000010409 thin film Substances 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 3
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001883 metal evaporation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- KKJUPNGICOCCDW-UHFFFAOYSA-N 7-N,N-Dimethylamino-1,2,3,4,5-pentathiocyclooctane Chemical compound CN(C)C1CSSSSSC1 KKJUPNGICOCCDW-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 description 1
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- WFGOJOJMWHVMAP-UHFFFAOYSA-N tungsten(iv) telluride Chemical compound [Te]=[W]=[Te] WFGOJOJMWHVMAP-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
本发明公开了一种场效应晶体管的制备方法,具体为:步骤1:在衬底上生长栅介质薄膜,然后将衬底至于腐蚀液中静置,直至衬底完全溶解,且介质薄膜漂浮于腐蚀液的液面上;步骤2:将栅介质薄膜转移至去离子水中,清洗掉栅介质薄膜上残留的腐蚀液;步骤3:采用设置有二维材料的衬底将栅介质薄膜从去离子水中捞起,并进行低温烘烤,去除残留的去离子水;步骤4:制备源、漏电极;步骤5:制备栅电极,从而完成场效应晶体管的制备。本发明采用液相转移的方法转移到二维材料上,减少了介质直接在二维材料上生长造成的损伤,保护了二维材料,有利于提高二维材料晶体管的频率性能。
Description
技术领域
本发明属于微电子技术领域。
背景技术
石墨烯的出现,打破了“二维材料不能在室温下稳定存在”的理论预研,随后因其优异的物理化学性能在各领域的广泛应用而备受关注,在全球掀起了二维材料的研究热潮,之后MoS2,WS2,WSe2,BN等二维材料也相继出现。全新的二维材料进入电子领域的时间不长,取得的成果却相当显著。如石墨烯具有高电子迁移率、高电子饱和速度和高热导率等优良特性,在毫米波、亚毫米波乃至太赫兹器件、超级计算机等方面具有广阔应用前景。基于石墨烯的超高速、超低噪声、超低功耗场效应晶体管及其集成电路,有望突破当前电子器件的高成本、低分辨率及高功耗的瓶颈,为开发更高性能电子器件提供新的思路和方案。
石墨烯场效应晶体管是石墨烯微波器件的最基本单元,石墨烯晶体管在栅电极下方有一层栅介质层,用来隔离栅与有源区。但是一般生长栅介质的方法对于石墨烯会造成损伤,破坏石墨烯本身的结构,引入一些缺陷,这会影响石墨烯的特性,降低其载流子迁移率,例如蒸发SiO2作为栅介质会导致石墨烯载流子迁移率降低85%。此外采用ALD方法生长栅介质也被普遍应用,但是完整的石墨烯表面没有化学键用于ALD的前驱体反应,因此使用ALD在石墨烯上生长介质必须要进行表面处理,如NO2处理,O3处理,PTCA处理等,或是溅射一层薄金属作为形核点,但是这些处理会引入带电杂质,石墨烯表面的带电杂质会减小石墨烯的载流子迁移率,这些带电杂质多为点缺陷,比如氧空位。介质生长会增加带电杂质浓度1.5-4*1012cm-2,大幅降低石墨烯的迁移率。
发明内容
发明目的:为了解决上述现有技术存在的问题本发明提供了一种场效应晶体管的制备方法。
技术方案:本发明提供了一种场效应晶体管的制备方法,具体包括如下步骤:
步骤1:在衬底上生长栅介质薄膜,然后按照衬底朝下、栅介质薄膜朝上将衬底置于腐蚀液中静置,直至衬底完全溶解;
步骤2:将栅介质薄膜转移至去离子水中,以清洗掉栅介质薄膜上残留的腐蚀液;
步骤3:采用表面设置有二维材料的目标衬底将栅介质薄膜从去离子水中捞起,并进行低温烘烤,以去除残留的去离子水,使栅介质薄膜与二维材料紧密接触;
步骤4:在栅介质薄膜上定义源、漏图形,并用腐蚀液腐蚀掉源、漏图形上的栅介质薄膜,然后在源、漏图形上蒸发源、漏金属,并剥离金属,从而完成源、漏电极的制备;
步骤5:定义栅极图形,蒸发栅金属,然后剥离,从而完成场效应晶体管的制备。
进一步的,所述步骤1中的衬底包括能被化学腐蚀液腐蚀的金属或Si;所述能被化学腐蚀液腐蚀的金属为Cu,Ni,Ti,Ag,Al,Cr,Pd,Au,Mo,W,Fe中的一种或两种的组合。
进一步的,所述步骤1中在衬底上生长栅介质薄膜采用方法的为磁控溅射,CVD或ALD。
进一步的,所述步骤1中栅介质薄膜的材质为Al2O3,SiO2,AlN,HfO2或Y2O3,栅介质薄膜的厚度为1nm-100nm。
进一步的,所述步骤1中的腐蚀液为三氯化铁,过硫酸铵,氯化氢,硫酸,硝酸,氢氟酸或者王水。
进一步的,所述的步骤2中二维材料为石墨烯,MoS2,MoSe2,WS2,WSe2,MoTe2,WTe2或BN薄膜;采用CVD法或机械剥离法制备二维材料。
进一步的,所述步骤1中在衬底置于腐蚀液之前,在栅介质薄膜表面旋涂一层聚甲基丙烯酸甲酯PMMA。
进一步的,所述步骤4或步骤5中采用平面光刻显影定义源、漏或栅极图形。
有益效果:
(1)将介质薄膜生长在衬底上,再采用液相转移的方法转移到二维材料上,减少了介质直接在二维材料上生长造成的损伤,保护了二维材料,有利于提高二维材料晶体管的频率性能;
(2)本发明的介质层起到保护作用,减少了后续工艺过程对二维材料的损伤。
附图说明
图1是在衬底上生长介质材料示意图。
图2是有二维材料的衬底示意图。
图3是将栅介质转移到二维材料上的流程示意图。
图4是以平面光刻显影技术做出源漏电极图形,去除介质,蒸发金属示意图。
图5是以平面光刻显影技术做出栅极图形,蒸发栅金属示意图。
具体实施方式
本实施例提供一种场效应晶体管的制备方法,具体制作步骤如下:
步骤1,如图1所示,生长栅介质薄膜:准备衬底材料,直接生长需要厚度的介质薄膜。
步骤2,如图2,3所示,去除衬底:将衬底朝下置于腐蚀液中(如果栅介质薄膜太薄,可以在栅介质薄膜表面旋涂一层PMMA,防止栅介质薄膜破裂),在表面张力的作用下,样品会漂浮在液面上,待衬底完全溶解。
步骤3,如图3所示,转移栅介质薄膜:将栅介质薄膜转移至去离子水中,静置一段时间清洗掉残留的腐蚀液,用已有二维材料的目标衬底,将栅介质薄膜从去离子水中捞起,低温烘烤去除残留水,使栅介质薄膜紧贴在二维材料上。
步骤4,如图4、5所示,完成FET器件制备:以平面光刻显影技术做出源漏图形,用腐蚀液将栅介质薄膜腐蚀掉,蒸发源漏金属,剥离金属,完成源漏电极制备。以平面光刻显影技术做出栅极图形,蒸发栅金属,后剥离,完成FET器件制备。
所述的步骤1中的衬底可以为金属,种类为能被化学腐蚀的金属,Cu,Ni,Ti,Ag,Al,Cr,Pd,Au,Mo,W,Fe中的一种或二种的组合,或是生长SiO2的Si衬底等。使用的栅介质薄膜生长方法可以为磁控溅射,CVD,ALD等多种介质生长方法。制备栅介质薄膜时,种类包括Al2O3,SiO2,AlN,HfO2或Y2O3,栅介质薄膜厚度范围1nm-100nm;如图3所述将制备好的二维材料转移到衬底上。
所述的步骤2中使用的腐蚀液可用三氯化铁FeCl3、过硫酸铵(NH4)2S2O4、氯化氢HCl、硫酸H2SO4、硝酸HNO3、氢氟酸或者王水,再该腐蚀液中二种混合液的质量比为0.01~100:1。使用的二维材料包括CVD法、机械剥离法、制备的1层或多层石墨烯,MoS2(二硫化钼),MoSe2(二硒化钼),WS2(二硫化钨),WSe2(二硒化钨),MoTe2(二碲化钼),WTe2(二碲化钨)或BN薄膜。
本实施例中用Cu作为衬底,采用ALD方法生长10nmAl2O3作为栅介质薄膜,生长温度200℃,每个循环为TMA 0.1s,N24s+H2O 0.1s,N24s,生长100个循环。按照Cu朝下将生长了栅介质薄膜的衬底置于1mol/L的FeCl3水溶液中,样品可在水的张力下漂浮,静置4小时至衬底Cu被FeCl3溶液完全溶解。将Al2O3栅介介质薄膜转移至去离子水面漂浮,静置10分钟清洗掉残留的FeCl3溶液,然后用转移了石墨烯的Si衬底,将样品从水中捞起,样品贴于Si片之上,90℃烘烤2小时除尽衬底与样品之间残留的水,使样品紧贴于目标衬底之上。采用平面光刻显影技术做出源漏图形,将样品放置在20%的盐酸溶液中2min,去除源漏图形下的Al2O3介质膜,蒸发200nmAu作为源漏金属。采用平面光刻显影技术做出栅图形,蒸发300nmAu作为栅金属金属,以标准的丙酮、乙醇浸泡剥离工艺剥离掉其他区域金属,完成石墨烯FET器件制备。
上面结合附图对本发明的实施方式作了详细说明,但是本发明并不限于上述实施方式,在本领域普通技术人员所具备的知识范围内,还可以在不脱离本发明宗旨的前提下做出各种变化。
Claims (8)
1.一种场效应晶体管的制备方法,其特征在于,具体包括如下步骤:
步骤1:在衬底上生长栅介质薄膜,然后按照衬底朝下、栅介质薄膜朝上将衬底置于腐蚀液中静置,直至衬底完全溶解;
步骤2:将栅介质薄膜转移至去离子水中,以清洗掉栅介质薄膜上残留的腐蚀液;
步骤3:采用表面设置有二维材料的目标衬底将栅介质薄膜从去离子水中捞起,并进行低温烘烤,以去除残留的去离子水,使栅介质薄膜与二维材料紧密接触;
步骤4:在栅介质薄膜上定义源、漏图形,并用腐蚀液腐蚀掉源、漏图形上的栅介质薄膜,然后在源、漏图形上蒸发源、漏金属,并剥离金属,从而完成源、漏电极的制备;
步骤5:定义栅极图形,蒸发栅金属,然后剥离,从而完成场效应晶体管的制备。
2.根据权利要求1所述的一种场效应晶体管的制备方法,其特征在于,所述步骤1中的衬底包括能被化学腐蚀液腐蚀的金属或Si;所述能被化学腐蚀液腐蚀的金属为Cu,Ni,Ti,Ag,Al,Cr,Pd,Au,Mo,W,Fe中的一种或两种的组合。
3.根据权利要求1所述的一种场效应晶体管的制备方法,其特征在于,所述步骤1中在衬底上生长栅介质薄膜采用方法的为磁控溅射,CVD或ALD。
4.根据权利要求1所述的一种场效应晶体管的制备方法,其特征在于,所述步骤1中栅介质薄膜的材质为Al2O3,SiO2,AlN,HfO2或Y2O3,栅介质薄膜的厚度为1nm-100nm。
5.根据权利要求1所述的一种场效应晶体管的制备方法,其特征在于,所述步骤1中的腐蚀液为三氯化铁,过硫酸铵,氯化氢,硫酸,硝酸,氢氟酸或者王水。
6.根据权利要求1所述的一种场效应晶体管的制备方法,其特征在于,所述的步骤2中二维材料为石墨烯,MoS2,MoSe2,WS2,WSe2,MoTe2,WTe2或BN薄膜;采用CVD法或机械剥离法制备二维材料。
7.根据权利要求1所述的一种场效应晶体管的制备方法,其特征在于,所述步骤1中在衬底置于腐蚀液之前,在栅介质薄膜表面旋涂一层聚甲基丙烯酸甲酯PMMA。
8.根据权利要求1所述的一种场效应晶体管的制备方法,其特征在于,所述步骤4或步骤5中采用平面光刻显影定义源、漏或栅极图形。
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