CN112135925B - 成膜装置和成膜方法 - Google Patents

成膜装置和成膜方法 Download PDF

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CN112135925B
CN112135925B CN201980031668.3A CN201980031668A CN112135925B CN 112135925 B CN112135925 B CN 112135925B CN 201980031668 A CN201980031668 A CN 201980031668A CN 112135925 B CN112135925 B CN 112135925B
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substrate
gas
film forming
capacitively coupled
coupled plasma
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CN112135925A (zh
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山涌纯
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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