CN112074963A - 半导体性单壁碳纳米管及包括有机半导体材料的有机场效应晶体管 - Google Patents

半导体性单壁碳纳米管及包括有机半导体材料的有机场效应晶体管 Download PDF

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Publication number
CN112074963A
CN112074963A CN201980017536.5A CN201980017536A CN112074963A CN 112074963 A CN112074963 A CN 112074963A CN 201980017536 A CN201980017536 A CN 201980017536A CN 112074963 A CN112074963 A CN 112074963A
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alkyl
substituted
field effect
effect transistor
organic field
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Pending
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CN201980017536.5A
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English (en)
Chinese (zh)
Inventor
权贞古
林秀满
S·贝克尔
李俊珉
萧翔志
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Clap Co Ltd
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Clap Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
CN201980017536.5A 2018-03-08 2019-03-06 半导体性单壁碳纳米管及包括有机半导体材料的有机场效应晶体管 Pending CN112074963A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18160612 2018-03-08
EP18160612.0 2018-03-08
PCT/EP2019/055522 WO2019170719A1 (en) 2018-03-08 2019-03-06 Organic field effect transistor comprising semiconducting single-walled carbon nanotubes and organic semiconducting material

Publications (1)

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CN112074963A true CN112074963A (zh) 2020-12-11

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US (1) US20200411781A1 (https=)
EP (1) EP3762980B1 (https=)
JP (1) JP7075682B2 (https=)
KR (1) KR102341687B1 (https=)
CN (1) CN112074963A (https=)
WO (1) WO2019170719A1 (https=)

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JP7021803B2 (ja) 2017-10-19 2022-02-17 クラップ カンパニー リミテッド 有機電子材料のための新規置換ベンゾナフタチオフェン化合物
EP3762979A1 (en) 2018-03-07 2021-01-13 Clap Co., Ltd. Patterning method for preparing top-gate, bottom-contact organic field effect transistors
KR20240111440A (ko) 2023-01-10 2024-07-17 김주형 재결정화된 다결정 반도체의 큐빅접합 구조에 기반하는 9차원 양자점의 메타 물질 반도체 소자와 그 제조 방법

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WO2019170719A1 (en) 2019-09-12
KR102341687B1 (ko) 2021-12-21
EP3762980B1 (en) 2023-08-09
US20200411781A1 (en) 2020-12-31
KR20200079271A (ko) 2020-07-02
JP7075682B2 (ja) 2022-05-26
JP2021515985A (ja) 2021-06-24
EP3762980A1 (en) 2021-01-13

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Application publication date: 20201211