CN111989865B - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN111989865B
CN111989865B CN201980026896.1A CN201980026896A CN111989865B CN 111989865 B CN111989865 B CN 111989865B CN 201980026896 A CN201980026896 A CN 201980026896A CN 111989865 B CN111989865 B CN 111989865B
Authority
CN
China
Prior art keywords
transistor
gate
oxide
electrically connected
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980026896.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN111989865A (zh
Inventor
石津贵彦
米田诚一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202511590094.7A priority Critical patent/CN121710909A/zh
Publication of CN111989865A publication Critical patent/CN111989865A/zh
Application granted granted Critical
Publication of CN111989865B publication Critical patent/CN111989865B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/0941—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of complementary type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
CN201980026896.1A 2018-04-20 2019-04-08 半导体装置 Active CN111989865B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202511590094.7A CN121710909A (zh) 2018-04-20 2019-04-08 半导体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018-081075 2018-04-20
JP2018081075 2018-04-20
JP2018-085916 2018-04-27
JP2018085916 2018-04-27
PCT/IB2019/052859 WO2019202431A1 (ja) 2018-04-20 2019-04-08 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202511590094.7A Division CN121710909A (zh) 2018-04-20 2019-04-08 半导体装置

Publications (2)

Publication Number Publication Date
CN111989865A CN111989865A (zh) 2020-11-24
CN111989865B true CN111989865B (zh) 2025-11-28

Family

ID=68238806

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980026896.1A Active CN111989865B (zh) 2018-04-20 2019-04-08 半导体装置
CN202511590094.7A Pending CN121710909A (zh) 2018-04-20 2019-04-08 半导体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202511590094.7A Pending CN121710909A (zh) 2018-04-20 2019-04-08 半导体装置

Country Status (5)

Country Link
US (3) US11935899B2 (https=)
JP (4) JP7359754B2 (https=)
KR (2) KR102658082B1 (https=)
CN (2) CN111989865B (https=)
WO (1) WO2019202431A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020128713A1 (ja) 2018-12-20 2020-06-25 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
WO2020201860A1 (ja) 2019-03-29 2020-10-08 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
CN115053344A (zh) * 2020-03-13 2022-09-13 株式会社半导体能源研究所 半导体装置及电子设备
US11616054B2 (en) * 2020-05-08 2023-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure for semiconductor devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104867464A (zh) * 2014-02-21 2015-08-26 株式会社半导体能源研究所 半导体装置及电子设备
JP2017153077A (ja) * 2016-02-25 2017-08-31 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647798A (en) * 1985-04-15 1987-03-03 Ncr Corporation Negative input voltage CMOS circuit
DE19622646B4 (de) 1995-06-06 2005-03-03 Kabushiki Kaisha Toshiba, Kawasaki Integrierte Halbleiterschaltungsvorrichtung
JP3195203B2 (ja) * 1995-06-06 2001-08-06 株式会社東芝 半導体集積回路
JP3547906B2 (ja) * 1996-06-18 2004-07-28 株式会社東芝 半導体集積回路装置
JP3400294B2 (ja) * 1997-04-25 2003-04-28 富士通株式会社 プル・アップ回路及び半導体装置
JP2001036388A (ja) * 1999-07-16 2001-02-09 Sharp Corp レベルシフト回路および半導体装置
JP3865689B2 (ja) * 2002-01-15 2007-01-10 松下電器産業株式会社 レベルシフト回路
JP3800520B2 (ja) * 2002-02-22 2006-07-26 株式会社ルネサステクノロジ 半導体集積回路装置と半導体装置
JP2004354970A (ja) 2003-05-02 2004-12-16 Matsushita Electric Ind Co Ltd 半導体回路装置
US6960953B2 (en) 2003-05-02 2005-11-01 Matsushita Electric Industrial Co., Ltd. Semiconductor circuit device
KR101711236B1 (ko) 2009-10-09 2017-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
TWI557739B (zh) * 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 半導體積體電路
JP6099336B2 (ja) 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 発光装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
JP2015177347A (ja) * 2014-03-14 2015-10-05 株式会社東芝 レベルシフト回路
US10032921B2 (en) * 2015-07-31 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP7337561B2 (ja) * 2019-06-25 2023-09-04 ローム株式会社 アナログスイッチ回路、ボリウム回路、半導体集積回路
JP7578594B2 (ja) * 2019-07-05 2024-11-06 株式会社半導体エネルギー研究所 半導体装置、蓄電装置および半導体装置の動作方法
CN115053344A (zh) * 2020-03-13 2022-09-13 株式会社半导体能源研究所 半导体装置及电子设备

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104867464A (zh) * 2014-02-21 2015-08-26 株式会社半导体能源研究所 半导体装置及电子设备
JP2017153077A (ja) * 2016-02-25 2017-08-31 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
KR20210002557A (ko) 2021-01-08
US12336291B2 (en) 2025-06-17
WO2019202431A1 (ja) 2019-10-24
JP7570483B2 (ja) 2024-10-21
JPWO2019202431A1 (ja) 2021-05-20
CN111989865A (zh) 2020-11-24
KR20230165391A (ko) 2023-12-05
US20240355833A1 (en) 2024-10-24
US20250280603A1 (en) 2025-09-04
CN121710909A (zh) 2026-03-20
US11935899B2 (en) 2024-03-19
JP2023175881A (ja) 2023-12-12
JP2025186405A (ja) 2025-12-23
US20210167095A1 (en) 2021-06-03
KR102609662B1 (ko) 2023-12-06
KR102658082B1 (ko) 2024-04-18
JP7359754B2 (ja) 2023-10-11
JP7747846B2 (ja) 2025-10-01
JP2025004164A (ja) 2025-01-14

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