JP7359754B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7359754B2
JP7359754B2 JP2020514792A JP2020514792A JP7359754B2 JP 7359754 B2 JP7359754 B2 JP 7359754B2 JP 2020514792 A JP2020514792 A JP 2020514792A JP 2020514792 A JP2020514792 A JP 2020514792A JP 7359754 B2 JP7359754 B2 JP 7359754B2
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Japan
Prior art keywords
transistor
gate
oxide
electrically connected
insulator
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JP2020514792A
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Japanese (ja)
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JPWO2019202431A1 (ja
JPWO2019202431A5 (https=
Inventor
貴彦 石津
誠一 米田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2019202431A1 publication Critical patent/JPWO2019202431A1/ja
Publication of JPWO2019202431A5 publication Critical patent/JPWO2019202431A5/ja
Priority to JP2023166806A priority Critical patent/JP7570483B2/ja
Application granted granted Critical
Publication of JP7359754B2 publication Critical patent/JP7359754B2/ja
Priority to JP2024176548A priority patent/JP7747846B2/ja
Priority to JP2025154638A priority patent/JP2025186405A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/0941—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of complementary type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
JP2020514792A 2018-04-20 2019-04-08 半導体装置 Active JP7359754B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023166806A JP7570483B2 (ja) 2018-04-20 2023-09-28 半導体装置
JP2024176548A JP7747846B2 (ja) 2018-04-20 2024-10-08 半導体装置
JP2025154638A JP2025186405A (ja) 2018-04-20 2025-09-18 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018081075 2018-04-20
JP2018081075 2018-04-20
JP2018085916 2018-04-27
JP2018085916 2018-04-27
PCT/IB2019/052859 WO2019202431A1 (ja) 2018-04-20 2019-04-08 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023166806A Division JP7570483B2 (ja) 2018-04-20 2023-09-28 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2019202431A1 JPWO2019202431A1 (ja) 2021-05-20
JPWO2019202431A5 JPWO2019202431A5 (https=) 2022-03-30
JP7359754B2 true JP7359754B2 (ja) 2023-10-11

Family

ID=68238806

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2020514792A Active JP7359754B2 (ja) 2018-04-20 2019-04-08 半導体装置
JP2023166806A Active JP7570483B2 (ja) 2018-04-20 2023-09-28 半導体装置
JP2024176548A Active JP7747846B2 (ja) 2018-04-20 2024-10-08 半導体装置
JP2025154638A Pending JP2025186405A (ja) 2018-04-20 2025-09-18 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2023166806A Active JP7570483B2 (ja) 2018-04-20 2023-09-28 半導体装置
JP2024176548A Active JP7747846B2 (ja) 2018-04-20 2024-10-08 半導体装置
JP2025154638A Pending JP2025186405A (ja) 2018-04-20 2025-09-18 半導体装置

Country Status (5)

Country Link
US (3) US11935899B2 (https=)
JP (4) JP7359754B2 (https=)
KR (2) KR102658082B1 (https=)
CN (2) CN111989865B (https=)
WO (1) WO2019202431A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020128713A1 (ja) 2018-12-20 2020-06-25 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
WO2020201860A1 (ja) 2019-03-29 2020-10-08 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置
CN115053344A (zh) * 2020-03-13 2022-09-13 株式会社半导体能源研究所 半导体装置及电子设备
US11616054B2 (en) * 2020-05-08 2023-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure for semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004354970A (ja) 2003-05-02 2004-12-16 Matsushita Electric Ind Co Ltd 半導体回路装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647798A (en) * 1985-04-15 1987-03-03 Ncr Corporation Negative input voltage CMOS circuit
DE19622646B4 (de) 1995-06-06 2005-03-03 Kabushiki Kaisha Toshiba, Kawasaki Integrierte Halbleiterschaltungsvorrichtung
JP3195203B2 (ja) * 1995-06-06 2001-08-06 株式会社東芝 半導体集積回路
JP3547906B2 (ja) * 1996-06-18 2004-07-28 株式会社東芝 半導体集積回路装置
JP3400294B2 (ja) * 1997-04-25 2003-04-28 富士通株式会社 プル・アップ回路及び半導体装置
JP2001036388A (ja) * 1999-07-16 2001-02-09 Sharp Corp レベルシフト回路および半導体装置
JP3865689B2 (ja) * 2002-01-15 2007-01-10 松下電器産業株式会社 レベルシフト回路
JP3800520B2 (ja) * 2002-02-22 2006-07-26 株式会社ルネサステクノロジ 半導体集積回路装置と半導体装置
US6960953B2 (en) 2003-05-02 2005-11-01 Matsushita Electric Industrial Co., Ltd. Semiconductor circuit device
KR101711236B1 (ko) 2009-10-09 2017-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
TWI557739B (zh) * 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 半導體積體電路
JP6099336B2 (ja) 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 発光装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
TWI727778B (zh) 2014-02-21 2021-05-11 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
JP2015177347A (ja) * 2014-03-14 2015-10-05 株式会社東芝 レベルシフト回路
US10032921B2 (en) * 2015-07-31 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6906978B2 (ja) * 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
JP7337561B2 (ja) * 2019-06-25 2023-09-04 ローム株式会社 アナログスイッチ回路、ボリウム回路、半導体集積回路
JP7578594B2 (ja) * 2019-07-05 2024-11-06 株式会社半導体エネルギー研究所 半導体装置、蓄電装置および半導体装置の動作方法
CN115053344A (zh) * 2020-03-13 2022-09-13 株式会社半导体能源研究所 半导体装置及电子设备

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004354970A (ja) 2003-05-02 2004-12-16 Matsushita Electric Ind Co Ltd 半導体回路装置

Also Published As

Publication number Publication date
KR20210002557A (ko) 2021-01-08
US12336291B2 (en) 2025-06-17
WO2019202431A1 (ja) 2019-10-24
JP7570483B2 (ja) 2024-10-21
JPWO2019202431A1 (ja) 2021-05-20
CN111989865A (zh) 2020-11-24
KR20230165391A (ko) 2023-12-05
US20240355833A1 (en) 2024-10-24
US20250280603A1 (en) 2025-09-04
CN121710909A (zh) 2026-03-20
US11935899B2 (en) 2024-03-19
JP2023175881A (ja) 2023-12-12
JP2025186405A (ja) 2025-12-23
US20210167095A1 (en) 2021-06-03
KR102609662B1 (ko) 2023-12-06
KR102658082B1 (ko) 2024-04-18
JP7747846B2 (ja) 2025-10-01
JP2025004164A (ja) 2025-01-14
CN111989865B (zh) 2025-11-28

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