CN111952260A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN111952260A
CN111952260A CN202010408972.XA CN202010408972A CN111952260A CN 111952260 A CN111952260 A CN 111952260A CN 202010408972 A CN202010408972 A CN 202010408972A CN 111952260 A CN111952260 A CN 111952260A
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China
Prior art keywords
conductive plate
semiconductor element
sealing body
intermediate conductive
semiconductor
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Pending
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CN202010408972.XA
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English (en)
Inventor
川岛崇功
门口卓矢
秋野哲也
长村雄也
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Denso Corp
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Denso Corp
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Application filed by Denso Corp filed Critical Denso Corp
Publication of CN111952260A publication Critical patent/CN111952260A/zh
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Abstract

本发明提供一种半导体装置，包括：层叠配置的上侧导电板、中间导电板以及下侧导电板；第一半导体元件，位于上侧导电板与中间导电板之间，分别与上侧导电板和中间导电板电连接；第二半导体元件，位于中间导电板与下侧导电板之间，分别与中间导电板和下侧导电板电连接；以及密封体，密封第一半导体元件以及第二半导体元件，并将上侧导电板、中间导电板以及下侧导电板一体地保持。中间导电板具有主体部和露出部，主体部在密封体的内部与第一半导体元件以及第二半导体元件接合，露出部从密封体的表面露出于外部。中间导电板的露出部的厚度大于等于中间导电板的主体部的厚度。

Description

半导体装置
技术领域
本说明书公开的技术涉及一种半导体装置。
背景技术
在日本特开第2016-36047号公报中公开了一种半导体装置。该半导体装置包括：层叠配置的上侧导电板、中间导电板以及下侧导电板；第一半导体元件，位于上侧导电板与中间导电板之间；第二半导体元件，位于中间导电板与下侧导电板之间；以及密封体，密封第一半导体元件以及第二半导体元件，并将上侧导电板、中间导电板以及下侧导电板一体地保持。
发明内容
在上述半导体装置中，第一半导体元件以及第二半导体元件分别由于通电而发热。如果第一半导体元件以及第二半导体元件发热，则与它们相邻的三个导电板的温度也上升，各个导电板发生热膨胀。尤其，位于第一半导体元件与第二半导体元件之间的中间导电板与上侧导电板以及下侧导电板相比更易于变为高温，存在发生更大的热膨胀的趋势。这样的不均匀的热膨胀可能导致半导体装置内的应变局部地增大，例如可能会使半导体装置的耐久性下降。
本说明书提供一种能够在三个以上的导电板层叠而成的半导体装置中抑制中间导电板的温度上升的技术。
本说明书所公开的半导体装置具有：层叠配置的上侧导电板、中间导电板以及下侧导电板；第一半导体元件，位于上侧导电板与中间导电板之间，分别与上侧导电板和中间导电板电连接；第二半导体元件，位于中间导电板与下侧导电板之间，分别与中间导电板和下侧导电板电连接；以及密封体，密封第一半导体元件以及第二半导体元件，并将上侧导电板、中间导电板以及下侧导电板一体地保持。中间导电板具有主体部和露出部，主体部在密封体的内部与第一半导体元件以及第二半导体元件接合，露出部从密封体的表面露出于外部。中间导电板的露出部的厚度大于等于中间导电板的主体部的厚度。
在上述半导体装置中，中间导电板从密封体的表面露出于外部，因此中间导电板的热量易于向外部释放。由此，能够显著地抑制中间导电板的温度上升。
附图说明
图1示出了实施例的半导体装置10的外观。
图2示出了沿着图1中的II-II线的剖视图。
图3示出了沿着图1中的III-III线的剖视图。
图4示出了实施例的半导体装置10的电路构造。
图5是示意性地示出一个变形例的半导体装置10A的构成的剖视图，与图2所示的剖视图对应。
图6是示意性地示出一个变形例的半导体装置10B的构成的剖视图，与图2所示的剖视图对应。
图7是示意性地示出一个变形例的半导体装置10C的构成的剖视图，与图2所示的剖视图对应。
图8是示意性地示出一个变形例的半导体装置10D的构成的剖视图，与图2所示的剖视图对应。
图9是示意性地示出一个变形例的半导体装置10E的构成的剖视图，与图2所示的剖视图对应。
具体实施方式
在本技术的一个实施方式中，中间导电板的露出部的厚度可以比中间导电板的主体部的厚度大。根据这样的构成，中间导电板的热量更易于向外部释放。
在本技术的一个实施方式中，密封体也可以具有上表面和位于与上表面相对侧的下表面。在该情况下，上侧导电板可以在密封体的上表面露出于外部，下侧导电板可以在密封体的下表面露出于外部。根据这样的构成，第一半导体元件以及第二半导体元件的热量易于经由上侧导电板以及下侧导电板向外部释放。
在上述实施方式中，密封体也可以具有在上表面与下表面之间延展的侧面。在该情况下，中间导电板的露出部也可以在密封体的侧面露出于外部。根据这样的构成，能够使中间导电板易于露出于密封体的表面。
在上述方式之外或替代上述方式，中间导电板的露出部也可以在密封体的上表面和下表面的至少一者处露出于外部。根据这样的构成，例如通过与半导体装置相邻地配置冷却器，能够将中间导电板与上侧导电板和/或下侧导电板同时冷却。
以下，参照附图对本发明的代表性且非限定性的具体示例详细进行说明。该详细说明仅旨在向本领域技术人员示出用于实施本发明的优选示例的详情，并非用于限定本发明的范围。此外，以下公开的附加特征和公开可以独立于其他特征、技术使用，也可以一起使用，以提供进一步改善后的半导体装置。
此外，以下的详细说明所公开的特征、工序的组合在最宽泛的意思上并非实施本发明所必需的，是仅为了特别说明本发明的代表性的具体示例而记载的。此外，在提供本发明的附加性地且实用的实施方式时，上述以及下述的代表性的具体示例的各种特征、以及独立权利要求和从属权利要求所记载的各种特征并非必须如在此记载的具体示例或者所列举的顺序那样进行组合。
记载在本说明书和/或权利要求书的范围内的所有特征的目的在于，在实施例和/或权利要求中记载的特征的构成之外，还作为对本发明的原始公开的内容以及要求保护的特定内容的限定而单独且彼此独立地公开的特征。此外，所有数值范围、以及涉及组或群的记载的目的在于，都是作为对本发明的原始公开及要求保护的特定内容的限定而公开了其中的构成。
[实施例]
参照图1-图4，对实施例的半导体装置10进行说明。本实施例的半导体装置10被用作例如电动车辆的电力控制装置，能够构成转换器、逆变器等电力变换电路的一部分。另外，本说明书中的电动车辆宽泛地意指具有驱动车轮的电动机(motor)的车辆，包括例如通过外部的电力充电的电动车辆、除了电动机之外还具有发动机(engine)的混合动力车、以及以燃料电池为电源的燃料电池车等。
半导体装置10具备多个半导体元件12、14、多个导电板16、18、20和密封体30。密封体30密封多个半导体元件12、14，并将多个导电板16、18、20一体地保持。密封体30由绝缘性材料构成。本实施例中的密封体30由例如环氧树脂等密封用树脂材料构成，但并不特别限定。
密封体30大致具有板状，具有上表面30a、下表面30b、第一端面30c、第二端面30d、第一侧面30e以及第二侧面30f。上表面30a与下表面30b彼此位于相对侧，第一端面30c、第二端面30d、第一侧面30e以及第二侧面30f各自在上表面30a与下表面30b之间延展。并且，第一端面30c与第二端面30d彼此位于相对侧，第一侧面30e与第二侧面30f彼此位于相对侧。
多个半导体元件12、14包括第一半导体元件12和第二半导体元件14。第一半导体元件12和第二半导体元件14是功率半导体元件，具有彼此相同的构造。各个半导体元件12、14具备半导体基板12a、14a、第一主电极12b、14b、第二主电极12c、14c以及多个信号电极12d、14d。半导体基板12a、14a可以是硅基板、碳化硅基板或者氮化物半导体基板，但不特别限定。
第一主电极12b、14b位于半导体基板12a、14a的表面，第二主电极12c、14c位于半导体基板12a、14a的背面。第一主电极12b、14b与第二主电极12c、14c经由半导体基板12a、14a互相电连接。各个半导体元件12、14是开关元件，能够将第一主电极12b、14b与第二主电极12c、14c之间选择性地导通以及切断，但不特别限定。多个信号电极12d、14d与第一主电极12b、14b相同地位于半导体基板12a、14a的表面。各个信号电极12d、14d与第一主电极12b、14b以及第二主电极12c、14c相比充分小。但是，由于第一主电极12b、14b和多个信号电极12d、14d这两者位于半导体基板12a、14a的表面，因此第一主电极12b、14b的面积比第二主电极12c、14c的面积小。第一主电极12b、14b、第二主电极12c、14c以及信号电极12d、14d可以使用铝、镍或者金等一种或多种金属构成。
作为一个示例，如图4所示，本实施例中的各个半导体元件12、14是IGBT(Insulated Gate Bipolar Transistor)与二极管一体化而成的RC(ReverseConducting)-IGBT。第一主电极12b、14b与IGBT的发射极以及二极管的阳极连接，第二主电极12c、14c与IGBT的集电极以及二极管的阴极连接。并且，多个信号电极12d、14d之中的一方与IGBT的栅极连接。另外，作为其他的实施方式，第一半导体元件12和/或第二半导体元件14也可以是MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)。在该情况下，第一主电极12b、14b与MOSFET的源极连接，第二主电极12c、14c与MOSFET的漏极连接。并且，多个信号电极12d、14d中的一方与MOSFET的栅极连接。
多个导电板16、18、20包括上侧导电板16、中间导电板20以及下侧导电板18。各个导电板16、20、18为至少部分地具有导电性的板状部件。3个导电板16、20、18被层叠配置，在它们之间配置有多个半导体元件12、14。即，第一半导体元件12位于上侧导电板16与中间导电板20之间，分别与上侧导电板16和中间导电板20电连接。第二半导体元件14位于中间导电板20与下侧导电板18之间，分别与中间导电板20和下侧导电板18电连接。另外，在上侧导电板16与中间导电板20之间，也可以设置有2个以上的第一半导体元件12。在该情况下，2个以上的第一半导体元件12既可以是相同种类(即，相同构造)的半导体元件，也可以是互不相同的种类(即，不同构造)的半导体元件。同样地，在中间导电板20与下侧导电板18之间，也可以设置有2个以上的相同种类或者不同种类的第二半导体元件14。
上侧导电板16、中间导电板20以及下侧导电板18是具有导电性的板状部件，至少一部分由导体构成。作为一个示例，本实施例中的各个导电板16、20、18是金属板，由铜构成。上侧导电板16经由第一导体间隔件13与第一半导体元件12的第一主电极12b电连接。中间导电板20与第一半导体元件12的第二主电极12c电连接。上侧导电板16与第一导体间隔件13之间、第一导体间隔件13与第一半导体元件12的第一主电极12b之间、以及第一半导体元件12的第二主电极12c与中间导电板20之间经由具有导电性的接合层50、52、54(例如钎焊层)而彼此接合，但不特别限定。
中间导电板20还经由第二导体间隔件15与第二半导体元件14的第一主电极14b电连接。并且，下侧导电板18与第二半导体元件14的第二主电极14c电连接。中间导电板20与第二导体间隔件15之间、第二导体间隔件15与第二半导体元件14的第一主电极14b之间、以及第二半导体元件14的第二主电极14c与下侧导电板18之间经由具有导电性的接合层60、62、64(例如钎焊层)而彼此接合，但不特别限定。
上侧导电板16在密封体30的上表面30a露出于外部。由此，上侧导电板16在半导体装置10中不仅构成电路的一部分，还作为将半导体元件12、14的热量向外部释放的散热板来发挥功用。同样地，下侧导电板18在密封体30的下表面30b露出于外部。由此，下侧导电板18也在半导体装置10中不仅构成电路的一部分，还作为将半导体元件12、14的热量向外部释放的散热板发挥功用。
除此之外，在本实施例的半导体装置10中，中间导电板20还在密封体30的侧面30e、30f露出于外部，作为散热板发挥功用。如图2所示，中间导电板20具有主体部20a和露出部20b，该主体部20a在密封体30的内部与第一半导体元件12以及第二半导体元件14接合，该露出部20b从密封体30的侧面30e、30f露出于外部。并且，中间导电板20的露出部20b的厚度Tb大于等于中间导电板20的主体部20a的厚度Ta。
半导体装置10具备多个电源端子32、34、36和多个信号端子40、42。这些端子32、34、36、40、42由铜等金属构成，但不特别限定。多个电源端子32、34、36从密封体30的第二端面30d凸出。多个信号端子40、42从密封体30的第一端面30c凸出。但是，对这些端子32、34、36、40、42的位置、形状等具体的构造并无特别限定。
多个电源端子32、34、36包括第一电源端子32、第二电源端子34以及第三电源端子36。第一电源端子32在密封体30的内部与上侧导电板16电连接。由此，第一半导体元件12的第一主电极12b经由上侧导电板16与第一电源端子32电连接。第一电源端子32也可以与上侧导电板16一体地形成，但不特别限定。
第二电源端子34在密封体30的内部与中间导电板20电连接。由此，第一半导体元件12的第二主电极12c以及第二半导体元件14的第一主电极14b经由中间导电板20与第二电源端子34电连接。第二电源端子34也可以与中间导电板20一体地形成，但不特别限定。第三电源端子36在密封体30的内部与下侧导电板18电连接。由此，第二半导体元件14的第二主电极14c经由下侧导电板18与第三电源端子36电连接。第三电源端子36也可以与下侧导电板18一体地形成，但不特别限定。
多个信号端子40、42包括多个第一信号端子40和多个第二信号端子42。多个第一信号端子40在密封体30的内部分别与第一半导体元件12的多个信号电极12d电连接。第一信号端子40与信号电极12d之间经由具有导电性的接合层56(例如钎焊层)而彼此接合，但不特别限定。同样地，多个第二信号端子42在密封体30的内部分别与第二半导体元件14的多个信号电极14d电连接。第二信号端子42与信号电极14d之间经由具有导电性的接合层66(例如钎焊层)而彼此接合，但不特别限定。
通过以上的构成，本实施例的半导体装置10能够被组装到转换器、逆变器等电力变换电路，构成进行电流的导通以及切断的开关电路。如果电流流过第一半导体元件12以及第二半导体元件14，则第一半导体元件12以及第二半导体元件14各自发热。如果第一半导体元件12以及第二半导体元件14发热，则与它们相邻的3个导电板16、18、20的温度也上升，各个导电板16、18、20产生热膨胀。尤其，与上侧导电板16以及下侧导电板18相比，位于第一半导体元件12与第二半导体元件14之间的中间导电板20更易于变得高温。
因此，在本实施例的半导体装置10中，中间导电板20在密封体30的侧面30e、30f露出于外部，中间导电板20的热量易于向外部释放。由此，中间导电板20的温度上升被显著地抑制。尤其，通过将冷却器配置为与中间导电板20的露出部20b相邻，能够抑制中间导电板20的温度上升，并能够高效地冷却第一半导体元件12以及第二半导体元件14这两者。
图5示出了一个变形例的半导体装置10A。如图5所示，中间导电板20的露出部20b的厚度Tb可以与中间导电板20的主体部20a的厚度Ta相比充分大。在该情况下，露出部20b的厚度Tb也可以为主体部20a的厚度Ta的两倍以上。根据这样的构成，能够进一步抑制中间导电板20的温度上升。除此之外，中间导电板20的形状也可以是在3个导电板16、18、20的层叠方向(图5的上下方向)上对称。根据这样的构成，能够减小第一半导体元件12与第二半导体元件14之间的温度差。能够进一步抑制中间导电板20的温度上升。
图6示出了另一个变形例的半导体装置10B。如图6所示，中间导电板20的露出部20b也可以在密封体30的上表面30a(或者下表面30b)露出于外部。即，中间导电板20的露出部20b也可以与上侧导电板16或者下侧导电板18一起在密封体30的同一表面露出。根据这样的构成，通过沿着密封体30的上表面30a或者下表面30b配置冷却器，能够同时冷却中间导电板20、以及上侧导电板16或者下侧导电板18。
图7示出了另一个变形例的半导体装置10C。如图7所示，中间导电板20的露出部20b也可以在密封体30的上表面30a以及下表面30b这双处露出于外部。根据这样的构成，通过分别在密封体30的上表面30a以及下表面30b配置冷却器，能够由2个冷却器高效地冷却中间导电板20。
图8示出了另一个变形例的半导体装置10D。如图8所示，中间导电板20的露出部20b也可以分别在密封体30的侧面30e、30f、上表面30a以及下表面30b露出于外部。根据这样的构成，中间导电板20大范围露出于外部，因此能够从中间导电板20向外部释放更多的热量。
图9示出了另一个变形例的半导体装置10E。如图9所示，密封体30也可以由中间导电板20分隔为第一密封体30X与第二密封体30Y。第一密封体30X填充在上侧导电板16与中间导电板20之间，将第一半导体元件12密封。第二密封体30Y填充在中间导电板20与下侧导电板18之间，将第二半导体元件14密封。在该半导体装置10E中，中间导电板20也具有主体部20a和露出部20b，主体部20a在密封体30的内部与第一半导体元件12以及第二半导体元件14接合，露出部20b从密封体30的表面露出于外部。并且，中间导电板20的露出部20b的厚度Tb与中间导电板20的主体部20a的厚度Ta相等或者更大。
标号的说明
10：半导体装置；
12：第一半导体元件；
14：第二半导体元件；
16：上侧导电板；
18：下侧导电板；
20；中间导电板；
20a：中间导电板的主体部；
20b：中间导电板的露出部；
30：密封体；
32、34、36：电源端子；
40、42：信号端子。

Claims (6)

1.一种半导体装置，包括：
层叠配置的上侧导电板、中间导电板以及下侧导电板；
第一半导体元件，位于所述上侧导电板与所述中间导电板之间，分别与所述上侧导电板和所述中间导电板电连接；
第二半导体元件，位于所述中间导电板与所述下侧导电板之间，分别与所述中间导电板和所述下侧导电板电连接；以及
密封体，密封所述第一半导体元件以及所述第二半导体元件，并将所述上侧导电板、所述中间导电板以及所述下侧导电板一体地保持，
所述中间导电板具有主体部和露出部，所述主体部在所述密封体的内部与所述第一半导体元件以及所述第二半导体元件接合，所述露出部从所述密封体的表面露出于外部，
所述中间导电板的所述露出部的厚度大于等于所述中间导电板的所述主体部的厚度。
2.根据权利要求1所述的半导体装置，其中，
所述中间导电板的所述露出部的厚度大于所述中间导电板的所述主体部的厚度。
3.根据权利要求1或者2所述的半导体装置，其中，
所述密封体具有上表面和位于与所述上表面相对侧的下表面，
所述上侧导电板在所述密封体的所述上表面露出于外部，
所述下侧导电板在所述密封体的所述下表面露出于外部。
4.根据权利要求3所述的半导体装置，其中，
所述密封体具有在所述上表面与所述下表面之间延展的侧面，
所述中间导电板的所述露出部在所述密封体的所述侧面露出于外部。
5.根据权利要求3或者4所述的半导体装置，其中，
所述中间导电板的所述露出部在所述密封体的所述上表面和所述下表面的至少其中一处露出于外部。
6.根据权利要求3所述的半导体装置，其中，
所述密封体具有在所述上表面与所述下表面之间延展的侧面，
所述中间导电板的所述露出部在所述密封体的所述侧面、以及所述上表面和所述下表面的至少一处露出于外部。
CN202010408972.XA 2019-05-15 2020-05-14 半导体装置 Pending CN111952260A (zh)

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