CN111937129B - 工艺诱导的偏离特性化 - Google Patents

工艺诱导的偏离特性化 Download PDF

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Publication number
CN111937129B
CN111937129B CN201980023479.1A CN201980023479A CN111937129B CN 111937129 B CN111937129 B CN 111937129B CN 201980023479 A CN201980023479 A CN 201980023479A CN 111937129 B CN111937129 B CN 111937129B
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semiconductor device
die
dies
device production
production system
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Chinese (zh)
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CN111937129A (zh
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海伦·刘
A·A·昂
张国庆
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws
    • G01N2021/8864—Mapping zones of defects

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Glass Compositions (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201980023479.1A 2018-03-10 2019-03-08 工艺诱导的偏离特性化 Active CN111937129B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862641297P 2018-03-10 2018-03-10
US62/641,297 2018-03-10
US16/273,876 2019-02-12
US16/273,876 US10585049B2 (en) 2018-03-10 2019-02-12 Process-induced excursion characterization
PCT/US2019/021389 WO2019177895A1 (en) 2018-03-10 2019-03-08 Process-induced excursion characterization

Publications (2)

Publication Number Publication Date
CN111937129A CN111937129A (zh) 2020-11-13
CN111937129B true CN111937129B (zh) 2022-04-29

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CN201980023479.1A Active CN111937129B (zh) 2018-03-10 2019-03-08 工艺诱导的偏离特性化

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Country Link
US (1) US10585049B2 (https=)
JP (1) JP7097466B2 (https=)
KR (1) KR102443351B1 (https=)
CN (1) CN111937129B (https=)
IL (1) IL277250B2 (https=)
SG (1) SG11202008760WA (https=)
TW (1) TWI797271B (https=)
WO (1) WO2019177895A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656274B2 (en) * 2021-02-15 2023-05-23 Kla Corporation Systems and methods for evaluating the reliability of semiconductor die packages
US12191215B2 (en) * 2021-10-22 2025-01-07 Nanya Technology Corporation Manufacturing and measuring system for semiconductor structures
US12431393B2 (en) 2021-10-26 2025-09-30 Nanya Technology Corporation Manufacturing method for semiconductor structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104870984A (zh) * 2012-11-12 2015-08-26 科磊股份有限公司 用于混合模式的晶片检验的方法及系统
CN107148597A (zh) * 2014-08-29 2017-09-08 Asml荷兰有限公司 度量方法、目标和衬底

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JP3698075B2 (ja) * 2001-06-20 2005-09-21 株式会社日立製作所 半導体基板の検査方法およびその装置
US6885977B2 (en) 2002-12-20 2005-04-26 Applied Materials, Inc. System to identify a wafer manufacturing problem and method therefor
JP3896996B2 (ja) * 2003-06-27 2007-03-22 株式会社日立製作所 回路パターンの検査装置および検査方法
US7394534B1 (en) 2003-11-19 2008-07-01 Kla-Tencor Corporation Process excursion detection
KR100909474B1 (ko) * 2005-08-10 2009-07-28 삼성전자주식회사 웨이퍼 결함지수를 사용하여 국부성 불량 모드를 갖는결함성 반도체 웨이퍼의 검출 방법들 및 이에 사용되는장비들
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8284394B2 (en) 2006-02-09 2012-10-09 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of a wafer
US8611639B2 (en) * 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
US7937234B2 (en) * 2008-08-29 2011-05-03 Intel Corporation Classification of spatial patterns on wafer maps
CN102292804B (zh) * 2009-02-03 2014-02-12 Q概念技术公司 利用非振动接触势差传感器的图案化晶片检查系统
US10101386B2 (en) 2014-02-14 2018-10-16 Texas Instruments Incorporated Real time semiconductor process excursion monitor
JP6685301B2 (ja) * 2014-11-19 2020-04-22 デカ テクノロジーズ インコーポレイテッド ユニット固有パターニングの自動光学検査
US10747830B2 (en) * 2014-11-21 2020-08-18 Mesh Labs Inc. Method and system for displaying electronic information
US9779202B2 (en) * 2015-06-22 2017-10-03 Kla-Tencor Corporation Process-induced asymmetry detection, quantification, and control using patterned wafer geometry measurements

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
CN104870984A (zh) * 2012-11-12 2015-08-26 科磊股份有限公司 用于混合模式的晶片检验的方法及系统
CN107148597A (zh) * 2014-08-29 2017-09-08 Asml荷兰有限公司 度量方法、目标和衬底

Also Published As

Publication number Publication date
IL277250A (en) 2020-10-29
KR102443351B1 (ko) 2022-09-14
WO2019177895A1 (en) 2019-09-19
CN111937129A (zh) 2020-11-13
JP2021515993A (ja) 2021-06-24
IL277250B2 (en) 2023-02-01
JP7097466B2 (ja) 2022-07-07
US20190277777A1 (en) 2019-09-12
TW201940892A (zh) 2019-10-16
KR20200120748A (ko) 2020-10-21
SG11202008760WA (en) 2020-10-29
IL277250B (en) 2022-10-01
TWI797271B (zh) 2023-04-01
US10585049B2 (en) 2020-03-10

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