IL277250B2 - Characterization of deviations caused by a process - Google Patents

Characterization of deviations caused by a process

Info

Publication number
IL277250B2
IL277250B2 IL277250A IL27725020A IL277250B2 IL 277250 B2 IL277250 B2 IL 277250B2 IL 277250 A IL277250 A IL 277250A IL 27725020 A IL27725020 A IL 27725020A IL 277250 B2 IL277250 B2 IL 277250B2
Authority
IL
Israel
Prior art keywords
dies
die
excursion
map
semiconductor wafer
Prior art date
Application number
IL277250A
Other languages
English (en)
Hebrew (he)
Other versions
IL277250A (en
IL277250B (en
Original Assignee
Kla Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Corp filed Critical Kla Corp
Publication of IL277250A publication Critical patent/IL277250A/en
Publication of IL277250B publication Critical patent/IL277250B/en
Publication of IL277250B2 publication Critical patent/IL277250B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws
    • G01N2021/8864—Mapping zones of defects

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Glass Compositions (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
IL277250A 2018-03-10 2020-09-09 Characterization of deviations caused by a process IL277250B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862641297P 2018-03-10 2018-03-10
US16/273,876 US10585049B2 (en) 2018-03-10 2019-02-12 Process-induced excursion characterization
PCT/US2019/021389 WO2019177895A1 (en) 2018-03-10 2019-03-08 Process-induced excursion characterization

Publications (3)

Publication Number Publication Date
IL277250A IL277250A (en) 2020-10-29
IL277250B IL277250B (en) 2022-10-01
IL277250B2 true IL277250B2 (en) 2023-02-01

Family

ID=67843829

Family Applications (1)

Application Number Title Priority Date Filing Date
IL277250A IL277250B2 (en) 2018-03-10 2020-09-09 Characterization of deviations caused by a process

Country Status (8)

Country Link
US (1) US10585049B2 (https=)
JP (1) JP7097466B2 (https=)
KR (1) KR102443351B1 (https=)
CN (1) CN111937129B (https=)
IL (1) IL277250B2 (https=)
SG (1) SG11202008760WA (https=)
TW (1) TWI797271B (https=)
WO (1) WO2019177895A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656274B2 (en) * 2021-02-15 2023-05-23 Kla Corporation Systems and methods for evaluating the reliability of semiconductor die packages
US12191215B2 (en) * 2021-10-22 2025-01-07 Nanya Technology Corporation Manufacturing and measuring system for semiconductor structures
US12431393B2 (en) 2021-10-26 2025-09-30 Nanya Technology Corporation Manufacturing method for semiconductor structures

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3698075B2 (ja) * 2001-06-20 2005-09-21 株式会社日立製作所 半導体基板の検査方法およびその装置
US6885977B2 (en) 2002-12-20 2005-04-26 Applied Materials, Inc. System to identify a wafer manufacturing problem and method therefor
JP3896996B2 (ja) * 2003-06-27 2007-03-22 株式会社日立製作所 回路パターンの検査装置および検査方法
US7394534B1 (en) 2003-11-19 2008-07-01 Kla-Tencor Corporation Process excursion detection
KR100909474B1 (ko) * 2005-08-10 2009-07-28 삼성전자주식회사 웨이퍼 결함지수를 사용하여 국부성 불량 모드를 갖는결함성 반도체 웨이퍼의 검출 방법들 및 이에 사용되는장비들
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8284394B2 (en) 2006-02-09 2012-10-09 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of a wafer
US8611639B2 (en) * 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
US7937234B2 (en) * 2008-08-29 2011-05-03 Intel Corporation Classification of spatial patterns on wafer maps
CN102292804B (zh) * 2009-02-03 2014-02-12 Q概念技术公司 利用非振动接触势差传感器的图案化晶片检查系统
US10192303B2 (en) * 2012-11-12 2019-01-29 Kla Tencor Corporation Method and system for mixed mode wafer inspection
US10101386B2 (en) 2014-02-14 2018-10-16 Texas Instruments Incorporated Real time semiconductor process excursion monitor
KR102574171B1 (ko) * 2014-08-29 2023-09-06 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
JP6685301B2 (ja) * 2014-11-19 2020-04-22 デカ テクノロジーズ インコーポレイテッド ユニット固有パターニングの自動光学検査
US10747830B2 (en) * 2014-11-21 2020-08-18 Mesh Labs Inc. Method and system for displaying electronic information
US9779202B2 (en) * 2015-06-22 2017-10-03 Kla-Tencor Corporation Process-induced asymmetry detection, quantification, and control using patterned wafer geometry measurements

Also Published As

Publication number Publication date
IL277250A (en) 2020-10-29
KR102443351B1 (ko) 2022-09-14
WO2019177895A1 (en) 2019-09-19
CN111937129A (zh) 2020-11-13
JP2021515993A (ja) 2021-06-24
CN111937129B (zh) 2022-04-29
JP7097466B2 (ja) 2022-07-07
US20190277777A1 (en) 2019-09-12
TW201940892A (zh) 2019-10-16
KR20200120748A (ko) 2020-10-21
SG11202008760WA (en) 2020-10-29
IL277250B (en) 2022-10-01
TWI797271B (zh) 2023-04-01
US10585049B2 (en) 2020-03-10

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