TWI797271B - 用於處理半導體裝置之系統及方法 - Google Patents

用於處理半導體裝置之系統及方法 Download PDF

Info

Publication number
TWI797271B
TWI797271B TW108107779A TW108107779A TWI797271B TW I797271 B TWI797271 B TW I797271B TW 108107779 A TW108107779 A TW 108107779A TW 108107779 A TW108107779 A TW 108107779A TW I797271 B TWI797271 B TW I797271B
Authority
TW
Taiwan
Prior art keywords
die
dies
deviation
map
processors
Prior art date
Application number
TW108107779A
Other languages
English (en)
Chinese (zh)
Other versions
TW201940892A (zh
Inventor
海倫 衡 劉
艾 翁
張國慶
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201940892A publication Critical patent/TW201940892A/zh
Application granted granted Critical
Publication of TWI797271B publication Critical patent/TWI797271B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws
    • G01N2021/8864—Mapping zones of defects

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Glass Compositions (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW108107779A 2018-03-10 2019-03-08 用於處理半導體裝置之系統及方法 TWI797271B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862641297P 2018-03-10 2018-03-10
US62/641,297 2018-03-10
US16/273,876 2019-02-12
US16/273,876 US10585049B2 (en) 2018-03-10 2019-02-12 Process-induced excursion characterization

Publications (2)

Publication Number Publication Date
TW201940892A TW201940892A (zh) 2019-10-16
TWI797271B true TWI797271B (zh) 2023-04-01

Family

ID=67843829

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108107779A TWI797271B (zh) 2018-03-10 2019-03-08 用於處理半導體裝置之系統及方法

Country Status (8)

Country Link
US (1) US10585049B2 (https=)
JP (1) JP7097466B2 (https=)
KR (1) KR102443351B1 (https=)
CN (1) CN111937129B (https=)
IL (1) IL277250B2 (https=)
SG (1) SG11202008760WA (https=)
TW (1) TWI797271B (https=)
WO (1) WO2019177895A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656274B2 (en) * 2021-02-15 2023-05-23 Kla Corporation Systems and methods for evaluating the reliability of semiconductor die packages
US12191215B2 (en) * 2021-10-22 2025-01-07 Nanya Technology Corporation Manufacturing and measuring system for semiconductor structures
US12431393B2 (en) 2021-10-26 2025-09-30 Nanya Technology Corporation Manufacturing method for semiconductor structures

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI313903B (en) * 2005-08-10 2009-08-21 Samsung Electronics Co Ltd Testing method detecting localized failure on a semiconductor wafer
US20100067781A1 (en) * 2003-11-19 2010-03-18 Kla-Tencor Corporation Process Excursion Detection
TWI443342B (zh) * 2009-02-03 2014-07-01 奎塞特科技公司 利用非振動接觸電位差感測器之圖案化晶圓檢驗系統
US20150154746A1 (en) * 2005-11-18 2015-06-04 Kla-Tencor Technologies Corporation Methods and Systems for Utilizing Design Data in Combination with Inspection Data
US20150234000A1 (en) * 2014-02-14 2015-08-20 Texas Instruments Incorporated Real Time Semiconductor Process Excursion Monitor
TW201712771A (zh) * 2015-06-22 2017-04-01 克萊譚克公司 使用圖案化之晶圓幾何測量對製程引發的不對稱的偵測、量化及控制

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3698075B2 (ja) * 2001-06-20 2005-09-21 株式会社日立製作所 半導体基板の検査方法およびその装置
US6885977B2 (en) 2002-12-20 2005-04-26 Applied Materials, Inc. System to identify a wafer manufacturing problem and method therefor
JP3896996B2 (ja) * 2003-06-27 2007-03-22 株式会社日立製作所 回路パターンの検査装置および検査方法
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US8284394B2 (en) 2006-02-09 2012-10-09 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of a wafer
US8611639B2 (en) * 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
US7937234B2 (en) * 2008-08-29 2011-05-03 Intel Corporation Classification of spatial patterns on wafer maps
US10192303B2 (en) * 2012-11-12 2019-01-29 Kla Tencor Corporation Method and system for mixed mode wafer inspection
KR102574171B1 (ko) * 2014-08-29 2023-09-06 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
JP6685301B2 (ja) * 2014-11-19 2020-04-22 デカ テクノロジーズ インコーポレイテッド ユニット固有パターニングの自動光学検査
US10747830B2 (en) * 2014-11-21 2020-08-18 Mesh Labs Inc. Method and system for displaying electronic information

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100067781A1 (en) * 2003-11-19 2010-03-18 Kla-Tencor Corporation Process Excursion Detection
TWI313903B (en) * 2005-08-10 2009-08-21 Samsung Electronics Co Ltd Testing method detecting localized failure on a semiconductor wafer
US20150154746A1 (en) * 2005-11-18 2015-06-04 Kla-Tencor Technologies Corporation Methods and Systems for Utilizing Design Data in Combination with Inspection Data
TWI443342B (zh) * 2009-02-03 2014-07-01 奎塞特科技公司 利用非振動接觸電位差感測器之圖案化晶圓檢驗系統
US20150234000A1 (en) * 2014-02-14 2015-08-20 Texas Instruments Incorporated Real Time Semiconductor Process Excursion Monitor
TW201712771A (zh) * 2015-06-22 2017-04-01 克萊譚克公司 使用圖案化之晶圓幾何測量對製程引發的不對稱的偵測、量化及控制

Also Published As

Publication number Publication date
IL277250A (en) 2020-10-29
KR102443351B1 (ko) 2022-09-14
WO2019177895A1 (en) 2019-09-19
CN111937129A (zh) 2020-11-13
JP2021515993A (ja) 2021-06-24
IL277250B2 (en) 2023-02-01
CN111937129B (zh) 2022-04-29
JP7097466B2 (ja) 2022-07-07
US20190277777A1 (en) 2019-09-12
TW201940892A (zh) 2019-10-16
KR20200120748A (ko) 2020-10-21
SG11202008760WA (en) 2020-10-29
IL277250B (en) 2022-10-01
US10585049B2 (en) 2020-03-10

Similar Documents

Publication Publication Date Title
CN111316413B (zh) 用于对准半导体装置参考图像及测试图像的系统及方法
JP6762317B2 (ja) 基板の面内歪みを検査する方法およびシステム
CN111868904B (zh) 半导体装置制造期间的晶片特性化数据的自相关及复合晶片度量的产生
TWI532112B (zh) 使用一晶圓幾何度量之疊對及半導體製程控制
CN109923654B (zh) 通过跨层图像相减的晶片噪声减少
CN112041975B (zh) 半导体生产期间的过程诱导位移表征
TWI747973B (zh) 度量系統、微影工具、度量工具及度量目標
TWI797271B (zh) 用於處理半導體裝置之系統及方法
TWI736681B (zh) 用於在晶圓沉積期間製程引起之變形預測之系統及方法
JP2019533312A (ja) パターニングされたウェハの特性評価のためのハイブリッド計量
US9406573B2 (en) Exposure mask fabrication method, exposure mask fabrication system, and semiconductor device fabrication method
CN110431488B (zh) 用于光掩模及光罩检验以及晶片印刷检查验证的多列间隔
CN109952635B (zh) 用于晶片检验临界区域的产生的方法及系统
US20250140614A1 (en) Method for creating product-like stressed surrogate test wafers