CN111892404A - 一种耐腐蚀碳化硅扩散管及其制备方法 - Google Patents
一种耐腐蚀碳化硅扩散管及其制备方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 69
- 238000009792 diffusion process Methods 0.000 title claims abstract description 47
- 230000007797 corrosion Effects 0.000 title claims abstract description 31
- 238000005260 corrosion Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000011265 semifinished product Substances 0.000 claims abstract description 39
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 238000001816 cooling Methods 0.000 claims abstract description 16
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002002 slurry Substances 0.000 claims abstract description 16
- 238000003756 stirring Methods 0.000 claims abstract description 16
- 229910052582 BN Inorganic materials 0.000 claims abstract description 15
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 15
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims abstract description 15
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims abstract description 15
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims abstract description 15
- 229940075624 ytterbium oxide Drugs 0.000 claims abstract description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 9
- 230000018044 dehydration Effects 0.000 claims abstract description 8
- 238000006297 dehydration reaction Methods 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 8
- 229910052602 gypsum Inorganic materials 0.000 claims abstract description 8
- 239000010440 gypsum Substances 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 230000001681 protective effect Effects 0.000 claims abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 21
- 238000000227 grinding Methods 0.000 claims description 18
- 239000005055 methyl trichlorosilane Substances 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 12
- 239000004575 stone Substances 0.000 description 12
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
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Abstract
本发明涉及扩散炉管的技术领域,特别是涉及一种耐腐蚀碳化硅扩散管及其制备方法,提高耐压强度,并且提高耐腐蚀性,延长使用周期;包括以下步骤:S1、将碳化硅95‑98wt%、氧化铝0.3‑0.6wt%、氧化铁0.2‑0.5wt%、四氯化钛0.1‑0.3wt%、氧化镱0.1‑0.3wt%和氮化硼1‑4wt%混合均匀,加入水分进行搅拌,搅拌成具有流动性的泥浆;S2、将S1中泥浆注入扩散管石膏模具中,脱水干燥过程中同时形成一定强度的坯体;S3、将S2中坯体在真空或者惰性保护气氛条件下用碳管炉进行烧结,烧结温度2400‑2500摄氏度,形成半成品A;S4、将半成品A进行阶段性冷却,然后取出,然后对半成品A内壁进行抛光打磨,形成半成品B;S5、将半成品B放至沉积炉中,降温取出后形成耐腐蚀碳化硅扩散管。
Description
技术领域
本发明涉及扩散炉管的技术领域,特别是涉及一种耐腐蚀碳化硅 扩散管及其制备方法。
背景技术
众所周知,扩散炉管是半导体器件及大规模集成电路制造过程中 用于对硅片进行扩散、氧化、退火、合金及烧结等工艺的一种加工装 置,在高温下用氮气携带三氯氧磷气体进入扩散管中,与氧气发生反 应,生成五氧化二磷,生成的五氧化二磷与制绒后的硅片反应,生成 磷原子,磷原子在高温下扩散到硅片体内,形成PN结。主要反应装 置一般分为水平式和直立式两种,半导体材料在高纯净的反应腔内进 行高温反应,此过程一般需要通入不同种类的气体或对腔体进行抽真 空处理。
但是现有的碳化硅扩散管存在耐腐蚀性差的问题,并且当出现被 腐蚀的情况,其不便于进行维修,实用性较差;并且且强度低,容易 在使用中出现破损损坏,使用可靠性较低。
发明内容
为解决上述技术问题,本发明的一个目的在于提供一种耐腐蚀碳 化硅扩散管,提高耐压强度,并且提高耐腐蚀性,延长使用周期。
本发明的另一个目的在于提供一种耐腐蚀碳化硅扩散管的制备 方法。
本发明的一种耐腐蚀碳化硅扩散管的制备方法,包括以下步骤:
S1、将碳化硅95-98wt%、氧化铝0.3-0.6wt%、氧化铁0.2-0.5wt%、 四氯化钛0.1-0.3wt%、氧化镱0.1-0.3wt%和氮化硼1-4wt%混合均匀, 加入水分进行搅拌,搅拌成具有流动性的泥浆;
S2、将S1中泥浆注入扩散管石膏模具中,脱水干燥过程中同时 形成一定强度的坯体;
S3、将S2中坯体在真空或者惰性保护气氛条件下用碳管炉进行 烧结,烧结温度2400-2500摄氏度,形成半成品A;
S4、将半成品A进行阶段性冷却,然后取出,然后对半成品A内 壁进行抛光打磨,形成半成品B;
S5、将半成品B放至沉积炉中,抽真空至压力<300Pa,升温至 1000~1100℃,通入氩气、氢气和一甲基三氯硅烷,一甲基三氯硅烷 发生化学反应生成碳化硅基体,保温80~160h,在半成品B表面生 成厚度约0.05~0.1mm的均匀致密的碳化硅涂层,降温取出后形成耐 腐蚀碳化硅扩散管。
本发明的一种耐腐蚀碳化硅扩散管的制备方法,步骤S1中碳化 硅95.5-98wt%、氧化铝0.3-0.6wt%、氧化铁0.2-0.5wt%、四氯化钛 0.2-0.3wt%、氧化镱0.2-0.3wt%和氮化硼1-3.7wt%。
本发明的一种耐腐蚀碳化硅扩散管的制备方法,步骤S1中碳化 硅95.5-97.8wt%、氧化铝0.3-0.6wt%、氧化铁0.2-0.45wt%、四氯 化钛0.2-0.3wt%、氧化镱0.2-0.3wt%和氮化硼1-3.7wt%。
本发明的一种耐腐蚀碳化硅扩散管的制备方法,所述步骤S3中 烧结时间为80-100h,并且碳管炉采用阶段性升温,然后恒温的方式。
本发明的一种耐腐蚀碳化硅扩散管的制备方法,所述步骤S4中 采用手持磨石方式打磨,磨石粒度为10000-12000目。
本发明的一种耐腐蚀碳化硅扩散管的制备方法,所述步骤S5中 氩气流量为4.2-5.1L/min;氢气流量为5.3-6.1L/min;氢气与一甲 基三氯硅烷的摩尔质量比为10:1。
本发明的一种耐腐蚀碳化硅扩散管的制备方法,所述步骤S1中 水为去离子水。
本发明的一种耐腐蚀碳化硅扩散管,由所述的耐腐蚀碳化硅扩散 管的制备方法制得。
与现有技术相比本发明的有益效果为:在同时添加四氯化钛、氧 化镱以及氮化硼的情况下,使得扩散管的耐压强度大幅度提升;附着 碳化硅涂层,使其相对于市面购买石英玻璃扩散管未附着碳化硅涂层 来说,其使用周期大幅提升,并且当碳化硅涂层损坏时,只需重新对 涂层进行修复即可;并且具有良好的光学均匀性。
具体实施方式
下面结合实施例,对本发明的具体实施方式作进一步详细描述。 以下实施例用于说明本发明,但不用来限制本发明的范围。
实施例1:
一种耐腐蚀碳化硅扩散管,其制备方法包括以下步骤:
S1、将碳化硅95wt%、氧化铝0.6wt%、氧化铁0.5wt%、四氯化 钛0.3wt%、氧化镱0.1wt%和氮化硼3.5wt%混合均匀,加入去离子水 进行搅拌,搅拌成具有流动性的泥浆;
S2、将S1中泥浆注入扩散管石膏模具中,脱水干燥过程中同时 形成一定强度的坯体;
S3、将S2中坯体在真空或者惰性保护气氛条件下用碳管炉进行 烧结,烧结温度2400-2500摄氏度,烧结时间为80h,形成半成品A;
S4、将半成品A进行阶段性冷却,然后取出,然后对半成品A内 壁进行抛光打磨,采用手持磨石方式打磨,磨石粒度为10000-12000 目,形成半成品B;
S5、将半成品B放至沉积炉中,抽真空至压力<300Pa,升温至 1000~1100℃,通入氩气、氢气和一甲基三氯硅烷,一甲基三氯硅烷 发生化学反应生成碳化硅基体,保温80~160h,在半成品B表面生 成厚度约0.05~0.1mm的均匀致密的碳化硅涂层,降温取出后形成耐 腐蚀碳化硅扩散管,其中氩气流量为4.2-5.1L/min;氢气流量为5.3-6.1L/min;氢气与一甲基三氯硅烷的摩尔质量比为10:1。
实施例2:
一种耐腐蚀碳化硅扩散管,其制备方法包括以下步骤:
S1、将碳化硅98wt%、氧化铝0.3wt%、氧化铁0.2wt%、四氯化 钛0.1wt%、氧化镱0.3wt%和氮化硼1.1wt%混合均匀,加入去离子水 进行搅拌,搅拌成具有流动性的泥浆;
S2、将S1中泥浆注入扩散管石膏模具中,脱水干燥过程中同时 形成一定强度的坯体;
S3、将S2中坯体在真空或者惰性保护气氛条件下用碳管炉进行 烧结,烧结温度2400-2500摄氏度,烧结时间为100h,形成半成品A;
S4、将半成品A进行阶段性冷却,然后取出,然后对半成品A内 壁进行抛光打磨,采用手持磨石方式打磨,磨石粒度为10000-12000 目,形成半成品B;
S5、将半成品B放至沉积炉中,抽真空至压力<300Pa,升温至 1000~1100℃,通入氩气、氢气和一甲基三氯硅烷,一甲基三氯硅烷 发生化学反应生成碳化硅基体,保温80~160h,在半成品B表面生 成厚度约0.05~0.1mm的均匀致密的碳化硅涂层,降温取出后形成耐 腐蚀碳化硅扩散管,其中氩气流量为4.2-5.1L/min;氢气流量为 5.3-6.1L/min;氢气与一甲基三氯硅烷的摩尔质量比为10:1。
实施例3:
S1、将碳化硅95.5wt%、氧化铝0.4wt%、氧化铁0.4wt%、四氯 化钛0.3wt%、氧化镱0.2wt%和氮化硼3.2wt%混合均匀,加入去离子 水进行搅拌,搅拌成具有流动性的泥浆;
S2、将S1中泥浆注入扩散管石膏模具中,脱水干燥过程中同时 形成一定强度的坯体;
S3、将S2中坯体在真空或者惰性保护气氛条件下用碳管炉进行 烧结,烧结温度2400-2500摄氏度,烧结时间为90h,形成半成品A;
S4、将半成品A进行阶段性冷却,然后取出,然后对半成品A内 壁进行抛光打磨,采用手持磨石方式打磨,磨石粒度为10000-12000 目,形成半成品B;
S5、将半成品B放至沉积炉中,抽真空至压力<300Pa,升温至 1000~1100℃,通入氩气、氢气和一甲基三氯硅烷,一甲基三氯硅烷 发生化学反应生成碳化硅基体,保温80~160h,在半成品B表面生 成厚度约0.05~0.1mm的均匀致密的碳化硅涂层,降温取出后形成耐 腐蚀碳化硅扩散管,其中氩气流量为4.2-5.1L/min;氢气流量为 5.3-6.1L/min;氢气与一甲基三氯硅烷的摩尔质量比为10:1。
实施例4:
S1、将碳化硅97.8wt%、氧化铝0.2wt%、氧化铁0.45wt%、四氯 化钛0.3wt%、氧化镱0.2wt%和氮化硼1.05wt%混合均匀,加入去离 子水进行搅拌,搅拌成具有流动性的泥浆;
S2、将S1中泥浆注入扩散管石膏模具中,脱水干燥过程中同时 形成一定强度的坯体;
S3、将S2中坯体在真空或者惰性保护气氛条件下用碳管炉进行 烧结,烧结温度2400-2500摄氏度,烧结时间为90h,形成半成品A;
S4、将半成品A进行阶段性冷却,然后取出,然后对半成品A内 壁进行抛光打磨,采用手持磨石方式打磨,磨石粒度为10000-12000 目,形成半成品B;
S5、将半成品B放至沉积炉中,抽真空至压力<300Pa,升温至 1000~1100℃,通入氩气、氢气和一甲基三氯硅烷,一甲基三氯硅烷 发生化学反应生成碳化硅基体,保温80~160h,在半成品B表面生 成厚度约0.05~0.1mm的均匀致密的碳化硅涂层,降温取出后形成耐 腐蚀碳化硅扩散管,其中氩气流量为4.2-5.1L/min;氢气流量为 5.3-6.1L/min;氢气与一甲基三氯硅烷的摩尔质量比为10:1。
实施例5:
S1、将碳化硅96.3wt%、氧化铝0.4wt%、氧化铁0.35wt%、四氯 化钛0.25wt%、氧化镱0.25wt%和氮化硼2.45wt%混合均匀,加入去 离子水进行搅拌,搅拌成具有流动性的泥浆;
S2、将S1中泥浆注入扩散管石膏模具中,脱水干燥过程中同时 形成一定强度的坯体;
S3、将S2中坯体在真空或者惰性保护气氛条件下用碳管炉进行 烧结,烧结温度2400-2500摄氏度,烧结时间为90h,形成半成品A;
S4、将半成品A进行阶段性冷却,然后取出,然后对半成品A内 壁进行抛光打磨,采用手持磨石方式打磨,磨石粒度为10000-12000 目,形成半成品B;
S5、将半成品B放至沉积炉中,抽真空至压力<300Pa,升温至 1000~1100℃,通入氩气、氢气和一甲基三氯硅烷,一甲基三氯硅烷 发生化学反应生成碳化硅基体,保温80~160h,在半成品B表面生 成厚度约0.05~0.1mm的均匀致密的碳化硅涂层,降温取出后形成耐 腐蚀碳化硅扩散管,其中氩气流量为4.2-5.1L/min;氢气流量为 5.3-6.1L/min;氢气与一甲基三氯硅烷的摩尔质量比为10:1。
对比例1:
与实施例5相比区别在于:将氧化铝0.4wt%去除,将碳化硅 96.3wt%增加至96.7wt%。
对比例2:
与实施例5相比区别在于:将四氯化钛0.25wt%去除,将碳化硅 96.3wt%增加至96.55wt%。
对比例3:
与实施例5相比区别在于:将氧化镱0.25wt%去除,将碳化硅 96.3wt%增加至96.55wt%。
对比例4:
与实施例5相比区别在于:将氮化硼2.45wt%去除,将碳化硅96.3wt%增加至98.75wt%。
对比例5:
与实施例5相比区别在于:将氧化铁0.35wt%去除,将碳化硅 96.3wt%增加至96.65wt%。
由上述实施例1-5以及对比例1-5制取的扩散管以及市面购买的 石英玻璃扩散管进行测试,得到如下数据:
耐压强度(Mpa) | 使用周期(h) | 光学均匀性 | |
实施例1 | 2200 | 500 | 优 |
实施例2 | 2215 | 503 | 优 |
实施例3 | 2230 | 504 | 优 |
实施例4 | 2245 | 512 | 优 |
实施例5 | 2260 | 531 | 优 |
对比例1 | 2255 | 526 | 优 |
对比例2 | 2103 | 531 | 优 |
对比例3 | 2106 | 526 | 优 |
对比例4 | 2090 | 527 | 优 |
对比例5 | 2250 | 525 | 优 |
市面购买 | 2000 | 450 | 优 |
由上述数据可知,去除氧化铝以及氧化铁耐压强度均未出现较大 波动,由此可见,在同时添加四氯化钛、氧化镱以及氮化硼的情况下, 使得扩散管的耐压强度大幅度提升;由上述数据得知,实施例1-5以 及对比例1-5均附着碳化硅涂层,使其相对于市面购买石英玻璃扩散 管未附着碳化硅涂层来说,其使用周期大幅提升;并且具有良好的光 学均匀性。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领 域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以 做出若干改进和变型,这些改进和变型也应视为本发明的保护范围。
Claims (8)
1.一种耐腐蚀碳化硅扩散管的制备方法,其特征在于,包括以下步骤:
S1、将碳化硅95-98wt%、氧化铝0.3-0.6wt%、氧化铁0.2-0.5wt%、四氯化钛0.1-0.3wt%、氧化镱0.1-0.3wt%和氮化硼1-4wt%混合均匀,加入水分进行搅拌,搅拌成具有流动性的泥浆;
S2、将S1中泥浆注入扩散管石膏模具中,脱水干燥过程中同时形成一定强度的坯体;
S3、将S2中坯体在真空或者惰性保护气氛条件下用碳管炉进行烧结,烧结温度2400-2500摄氏度,形成半成品A;
S4、将半成品A进行阶段性冷却,然后取出,然后对半成品A内壁进行抛光打磨,形成半成品B;
S5、将半成品B放至沉积炉中,抽真空至压力<300Pa,升温至1000~1100℃,通入氩气、氢气和一甲基三氯硅烷,一甲基三氯硅烷发生化学反应生成碳化硅基体,保温80~160h,在半成品B表面生成厚度约0.05~0.1mm的均匀致密的碳化硅涂层,降温取出后形成耐腐蚀碳化硅扩散管。
2.如权利要求1所述的一种耐腐蚀碳化硅扩散管的制备方法,其特征在于,步骤S1中碳化硅95.5-98wt%、氧化铝0.3-0.6wt%、氧化铁0.2-0.5wt%、四氯化钛0.2-0.3wt%、氧化镱0.2-0.3wt%和氮化硼1-3.7wt%。
3.如权利要求2所述的一种耐腐蚀碳化硅扩散管的制备方法,其特征在于,步骤S1中碳化硅95.5-97.8wt%、氧化铝0.3-0.6wt%、氧化铁0.2-0.45wt%、四氯化钛0.2-0.3wt%、氧化镱0.2-0.3wt%和氮化硼1-3.7wt%。
4.如权利要求3所述的一种耐腐蚀碳化硅扩散管的制备方法,其特征在于,所述步骤S3中烧结时间为80-100h,并且碳管炉采用阶段性升温,然后恒温的方式。
5.如权利要求4所述的一种耐腐蚀碳化硅扩散管的制备方法,其特征在于,所述步骤S4中采用手持磨石方式打磨,磨石粒度为10000-12000目。
6.如权利要求5所述的一种耐腐蚀碳化硅扩散管的制备方法,其特征在于,所述步骤S5中氩气流量为4.2-5.1L/min;氢气流量为5.3-6.1L/min;氢气与一甲基三氯硅烷的摩尔质量比为10:1。
7.如权利要求6所述的一种耐腐蚀碳化硅扩散管的制备方法,其特征在于,所述步骤S1中水为去离子水。
8.一种耐腐蚀碳化硅扩散管,由权利要求1-7所述的耐腐蚀碳化硅扩散管的制备方法制得。
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