CN111656284B - 曝光装置及曝光方法 - Google Patents
曝光装置及曝光方法 Download PDFInfo
- Publication number
- CN111656284B CN111656284B CN201980009581.6A CN201980009581A CN111656284B CN 111656284 B CN111656284 B CN 111656284B CN 201980009581 A CN201980009581 A CN 201980009581A CN 111656284 B CN111656284 B CN 111656284B
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018009277 | 2018-01-24 | ||
| JP2018-009277 | 2018-01-24 | ||
| JP2018211010 | 2018-11-09 | ||
| JP2018-211010 | 2018-11-09 | ||
| PCT/JP2019/000934 WO2019146448A1 (fr) | 2018-01-24 | 2019-01-15 | Dispositif d'exposition et procédé d'exposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111656284A CN111656284A (zh) | 2020-09-11 |
| CN111656284B true CN111656284B (zh) | 2024-04-12 |
Family
ID=67394927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980009581.6A Active CN111656284B (zh) | 2018-01-24 | 2019-01-15 | 曝光装置及曝光方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JPWO2019146448A1 (fr) |
| KR (2) | KR20230155617A (fr) |
| CN (1) | CN111656284B (fr) |
| TW (2) | TW202349136A (fr) |
| WO (1) | WO2019146448A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7133744B1 (ja) * | 2019-08-27 | 2022-09-08 | シグニファイ ホールディング ビー ヴィ | アクアリウムを照らすための照明デバイス |
| JP2021185393A (ja) | 2020-05-25 | 2021-12-09 | キヤノン株式会社 | 露光装置、露光方法、及び物品の製造方法 |
| JP2023003153A (ja) | 2021-06-23 | 2023-01-11 | キヤノン株式会社 | 露光装置、露光方法および物品の製造方法 |
| CN116921817B (zh) * | 2023-09-15 | 2023-12-15 | 中建安装集团有限公司 | 自动tig焊电弧聚集度在线监测及智能预警方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0486316A2 (fr) * | 1990-11-15 | 1992-05-20 | Nikon Corporation | Méthode et appareil de projection pour exposition |
| JPH06318542A (ja) * | 1993-05-07 | 1994-11-15 | Nikon Corp | 投影露光装置 |
| CN101286012A (zh) * | 2007-04-13 | 2008-10-15 | 株式会社Orc制作所 | 投影曝光装置 |
| JP2014052614A (ja) * | 2012-09-10 | 2014-03-20 | Nikon Corp | マスク、マスクの製造方法、露光方法、デバイス製造方法及び露光装置 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0669014B2 (ja) * | 1986-02-24 | 1994-08-31 | 株式会社ニコン | 露光装置 |
| JP2522231Y2 (ja) * | 1988-04-01 | 1997-01-08 | 旭光学工業株式会社 | 縮小拡大写真製版システム |
| JPH0644549B2 (ja) * | 1989-03-17 | 1994-06-08 | 株式会社日立製作所 | 投影露光法及び装置 |
| JP3437314B2 (ja) * | 1995-03-16 | 2003-08-18 | 富士通株式会社 | 位相シフトマスク、パターン形成方法及び半導体装置の製造方法 |
| JP3341767B2 (ja) * | 2001-10-10 | 2002-11-05 | 株式会社ニコン | 投影露光装置及び方法、並びに回路素子形成方法 |
| JP2003203853A (ja) * | 2002-01-09 | 2003-07-18 | Nikon Corp | 露光装置及び方法並びにマイクロデバイスの製造方法 |
| TW200301848A (en) * | 2002-01-09 | 2003-07-16 | Nikon Corp | Exposure apparatus and exposure method |
| JP2003295459A (ja) * | 2002-04-02 | 2003-10-15 | Nikon Corp | 露光装置及び露光方法 |
| JP2003257846A (ja) * | 2002-03-07 | 2003-09-12 | Nikon Corp | 光源ユニット、照明装置、露光装置及び露光方法 |
| US6813098B2 (en) * | 2003-01-02 | 2004-11-02 | Ultratech, Inc. | Variable numerical aperture large-field unit-magnification projection system |
| JP4474121B2 (ja) * | 2003-06-06 | 2010-06-02 | キヤノン株式会社 | 露光装置 |
| JP2007059510A (ja) * | 2005-08-23 | 2007-03-08 | Nikon Corp | 照明光学装置、露光装置及びマイクロデバイスの製造方法 |
| KR101399768B1 (ko) * | 2006-12-28 | 2014-05-27 | 칼 짜이스 에스엠티 게엠베하 | 기울어진 편향 미러를 갖는 반사굴절식 투영 대물렌즈, 투영 노광 장치, 투영 노광 방법 및 미러 |
| JP5311757B2 (ja) * | 2007-03-29 | 2013-10-09 | キヤノン株式会社 | 反射光学素子、露光装置およびデバイス製造方法 |
| JP5115953B2 (ja) * | 2007-03-30 | 2013-01-09 | Ｈｏｙａ株式会社 | フォトマスクブランク及びフォトマスク |
| JP4936385B2 (ja) * | 2007-06-06 | 2012-05-23 | キヤノン株式会社 | 偏光素子及び露光装置 |
| JP2009032749A (ja) * | 2007-07-24 | 2009-02-12 | Nikon Corp | 露光装置およびデバイス製造方法 |
| JP2009288005A (ja) * | 2008-05-28 | 2009-12-10 | Asml Netherlands Bv | 検査方法および装置、リソグラフィ装置、リソグラフィ処理セルおよびデバイス製造方法 |
| JP2010087388A (ja) * | 2008-10-02 | 2010-04-15 | Ushio Inc | 露光装置 |
| JP2010103191A (ja) * | 2008-10-21 | 2010-05-06 | Fujitsu Microelectronics Ltd | 露光装置および露光方法 |
| JP2011022529A (ja) * | 2009-07-21 | 2011-02-03 | Mejiro Precision:Kk | 光源装置及び露光装置 |
| WO2012067246A1 (fr) * | 2010-11-19 | 2012-05-24 | Ｎｓｋテクノロジー株式会社 | Dispositif et procédé d'exposition de proximité |
-
2019
- 2019-01-15 KR KR1020237037874A patent/KR20230155617A/ko active Application Filing
- 2019-01-15 CN CN201980009581.6A patent/CN111656284B/zh active Active
- 2019-01-15 KR KR1020207024073A patent/KR102604340B1/ko active IP Right Grant
- 2019-01-15 JP JP2019567007A patent/JPWO2019146448A1/ja active Pending
- 2019-01-15 WO PCT/JP2019/000934 patent/WO2019146448A1/fr active Application Filing
- 2019-01-22 TW TW112131695A patent/TW202349136A/zh unknown
- 2019-01-22 TW TW108102341A patent/TWI815848B/zh active
-
2022
- 2022-02-01 JP JP2022013907A patent/JP2022051810A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0486316A2 (fr) * | 1990-11-15 | 1992-05-20 | Nikon Corporation | Méthode et appareil de projection pour exposition |
| JPH06318542A (ja) * | 1993-05-07 | 1994-11-15 | Nikon Corp | 投影露光装置 |
| CN101286012A (zh) * | 2007-04-13 | 2008-10-15 | 株式会社Orc制作所 | 投影曝光装置 |
| JP2014052614A (ja) * | 2012-09-10 | 2014-03-20 | Nikon Corp | マスク、マスクの製造方法、露光方法、デバイス製造方法及び露光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230155617A (ko) | 2023-11-10 |
| WO2019146448A1 (fr) | 2019-08-01 |
| KR20200108068A (ko) | 2020-09-16 |
| JPWO2019146448A1 (ja) | 2021-01-07 |
| CN111656284A (zh) | 2020-09-11 |
| TW202349136A (zh) | 2023-12-16 |
| TW201940986A (zh) | 2019-10-16 |
| TWI815848B (zh) | 2023-09-21 |
| KR102604340B1 (ko) | 2023-11-21 |
| JP2022051810A (ja) | 2022-04-01 |
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