CN111615751A - 电容器和制备电容器的方法 - Google Patents
电容器和制备电容器的方法 Download PDFInfo
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- CN111615751A CN111615751A CN201880002918.6A CN201880002918A CN111615751A CN 111615751 A CN111615751 A CN 111615751A CN 201880002918 A CN201880002918 A CN 201880002918A CN 111615751 A CN111615751 A CN 111615751A
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- insulating layer
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- 239000003990 capacitor Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000010410 layer Substances 0.000 claims description 355
- 238000005530 etching Methods 0.000 claims description 44
- 238000000151 deposition Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910000167 hafnon Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
本申请实施例公开了一种电容器和制备电容器的方法。所述电容器包括:电极层,包括相互分离的第一电极和第二电极;叠层结构,包括n层电介质层和n+1层导电层,所述n层电介质层和所述n+1层导电层形成导电层与电介质层彼此相邻的结构,所述叠层结构形成至少两个柱状结构,n为正整数;互联结构,用于将所述n+1层导电层中的奇数层导电层电连接至所述第一电极,将所述n+1层导电层中的偶数层导电层电连接至所述第二电极。本申请实施例的技术方案,能够提高电容器的容值密度。
Description
PCT国内申请,说明书已公开。
Claims (27)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2018/123575 WO2020132884A1 (zh) | 2018-12-25 | 2018-12-25 | 电容器和制备电容器的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111615751A true CN111615751A (zh) | 2020-09-01 |
CN111615751B CN111615751B (zh) | 2023-02-28 |
Family
ID=71127300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880002918.6A Active CN111615751B (zh) | 2018-12-25 | 2018-12-25 | 电容器和制备电容器的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11239308B2 (zh) |
EP (1) | EP3754725A4 (zh) |
CN (1) | CN111615751B (zh) |
WO (1) | WO2020132884A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4184537A1 (en) * | 2021-11-18 | 2023-05-24 | Murata Manufacturing Co., Ltd. | An electrical device comprising stacked capacitive structures with electrodes connected from bottom to top and top to bottom |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1052006A (zh) * | 1989-11-20 | 1991-06-05 | 三星电子株式会社 | 半导体器件及其制造方法 |
EP1646072A2 (en) * | 2004-10-08 | 2006-04-12 | Rohm and Haas Electronic Materials, L.L.C. | Capacitor structure |
CN102339671A (zh) * | 2010-07-21 | 2012-02-01 | 马长兆 | 一种平面叠层固体电容器 |
US20130181326A1 (en) * | 2012-01-18 | 2013-07-18 | International Business Machines Corporation | Multilayer mim capacitor |
CN105514093A (zh) * | 2016-01-22 | 2016-04-20 | 天津大学 | 基于硅通孔技术的半导体电容器及其制造方法、封装结构 |
JP2017513218A (ja) * | 2014-03-25 | 2017-05-25 | アイピーディーアイエイ | コンデンサ構造 |
CN107204323A (zh) * | 2016-03-17 | 2017-09-26 | 台湾积体电路制造股份有限公司 | 半导体结构及其制造方法 |
CN107359153A (zh) * | 2017-07-10 | 2017-11-17 | 宏衍微电子(大连)有限公司 | 具有沟槽结构的高容量硅电容器的制造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8085524B2 (en) | 2005-11-08 | 2011-12-27 | Ipdia | Integrated capacitor arrangement for ultrahigh capacitance values |
SE534510C2 (sv) * | 2008-11-19 | 2011-09-13 | Silex Microsystems Ab | Funktionell inkapsling |
US8405135B2 (en) * | 2010-10-05 | 2013-03-26 | International Business Machines Corporation | 3D via capacitor with a floating conductive plate for improved reliability |
FR2993397A1 (fr) * | 2012-07-16 | 2014-01-17 | St Microelectronics Sa | Dispositif semi-conducteur comprenant un condensateur integre et procede de fabrication |
FR3007197B1 (fr) * | 2013-06-18 | 2016-12-09 | St Microelectronics Crolles 2 Sas | Procede de realisation d'une liaison electrique traversante et d'un condensateur traversant dans un substrat, et dispositif correspondant |
US9105759B2 (en) | 2013-11-27 | 2015-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitive device and method of making the same |
US10446325B2 (en) * | 2017-09-29 | 2019-10-15 | Advanced Semiconductor Engineering, Inc. | Capacitor structures |
-
2018
- 2018-12-25 EP EP18944231.2A patent/EP3754725A4/en active Pending
- 2018-12-25 WO PCT/CN2018/123575 patent/WO2020132884A1/zh unknown
- 2018-12-25 CN CN201880002918.6A patent/CN111615751B/zh active Active
-
2020
- 2020-09-16 US US17/022,225 patent/US11239308B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1052006A (zh) * | 1989-11-20 | 1991-06-05 | 三星电子株式会社 | 半导体器件及其制造方法 |
EP1646072A2 (en) * | 2004-10-08 | 2006-04-12 | Rohm and Haas Electronic Materials, L.L.C. | Capacitor structure |
CN102339671A (zh) * | 2010-07-21 | 2012-02-01 | 马长兆 | 一种平面叠层固体电容器 |
US20130181326A1 (en) * | 2012-01-18 | 2013-07-18 | International Business Machines Corporation | Multilayer mim capacitor |
JP2017513218A (ja) * | 2014-03-25 | 2017-05-25 | アイピーディーアイエイ | コンデンサ構造 |
CN105514093A (zh) * | 2016-01-22 | 2016-04-20 | 天津大学 | 基于硅通孔技术的半导体电容器及其制造方法、封装结构 |
CN107204323A (zh) * | 2016-03-17 | 2017-09-26 | 台湾积体电路制造股份有限公司 | 半导体结构及其制造方法 |
CN107359153A (zh) * | 2017-07-10 | 2017-11-17 | 宏衍微电子(大连)有限公司 | 具有沟槽结构的高容量硅电容器的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3754725A1 (en) | 2020-12-23 |
WO2020132884A1 (zh) | 2020-07-02 |
US20210005705A1 (en) | 2021-01-07 |
US11239308B2 (en) | 2022-02-01 |
CN111615751B (zh) | 2023-02-28 |
EP3754725A4 (en) | 2021-05-12 |
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