CN111615751A - 电容器和制备电容器的方法 - Google Patents

电容器和制备电容器的方法 Download PDF

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Publication number
CN111615751A
CN111615751A CN201880002918.6A CN201880002918A CN111615751A CN 111615751 A CN111615751 A CN 111615751A CN 201880002918 A CN201880002918 A CN 201880002918A CN 111615751 A CN111615751 A CN 111615751A
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China
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layer
conductive
conductive layers
insulating layer
layers
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CN201880002918.6A
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CN111615751B (zh
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陆斌
沈健
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本申请实施例公开了一种电容器和制备电容器的方法。所述电容器包括：电极层，包括相互分离的第一电极和第二电极；叠层结构，包括n层电介质层和n+1层导电层，所述n层电介质层和所述n+1层导电层形成导电层与电介质层彼此相邻的结构，所述叠层结构形成至少两个柱状结构，n为正整数；互联结构，用于将所述n+1层导电层中的奇数层导电层电连接至所述第一电极，将所述n+1层导电层中的偶数层导电层电连接至所述第二电极。本申请实施例的技术方案，能够提高电容器的容值密度。

Description

PCT国内申请，说明书已公开。

Claims (27)

  1. PCT国内申请，权利要求书已公开。
CN201880002918.6A 2018-12-25 2018-12-25 电容器和制备电容器的方法 Active CN111615751B (zh)

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PCT/CN2018/123575 WO2020132884A1 (zh) 2018-12-25 2018-12-25 电容器和制备电容器的方法

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CN111615751A true CN111615751A (zh) 2020-09-01
CN111615751B CN111615751B (zh) 2023-02-28

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EP (1) EP3754725A4 (zh)
CN (1) CN111615751B (zh)
WO (1) WO2020132884A1 (zh)

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Publication number Priority date Publication date Assignee Title
EP4184537A1 (en) * 2021-11-18 2023-05-24 Murata Manufacturing Co., Ltd. An electrical device comprising stacked capacitive structures with electrodes connected from bottom to top and top to bottom

Citations (8)

* Cited by examiner, † Cited by third party
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CN1052006A (zh) * 1989-11-20 1991-06-05 三星电子株式会社 半导体器件及其制造方法
EP1646072A2 (en) * 2004-10-08 2006-04-12 Rohm and Haas Electronic Materials, L.L.C. Capacitor structure
CN102339671A (zh) * 2010-07-21 2012-02-01 马长兆 一种平面叠层固体电容器
US20130181326A1 (en) * 2012-01-18 2013-07-18 International Business Machines Corporation Multilayer mim capacitor
CN105514093A (zh) * 2016-01-22 2016-04-20 天津大学 基于硅通孔技术的半导体电容器及其制造方法、封装结构
JP2017513218A (ja) * 2014-03-25 2017-05-25 アイピーディーアイエイ コンデンサ構造
CN107204323A (zh) * 2016-03-17 2017-09-26 台湾积体电路制造股份有限公司 半导体结构及其制造方法
CN107359153A (zh) * 2017-07-10 2017-11-17 宏衍微电子（大连）有限公司 具有沟槽结构的高容量硅电容器的制造方法

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
WO2007054858A2 (en) 2005-11-08 2007-05-18 Nxp B.V. Integrated capacitor arrangement for ultrahigh capacitance values
SE534510C2 (sv) * 2008-11-19 2011-09-13 Silex Microsystems Ab Funktionell inkapsling
US8405135B2 (en) 2010-10-05 2013-03-26 International Business Machines Corporation 3D via capacitor with a floating conductive plate for improved reliability
FR2993397A1 (fr) * 2012-07-16 2014-01-17 St Microelectronics Sa Dispositif semi-conducteur comprenant un condensateur integre et procede de fabrication
FR3007197B1 (fr) * 2013-06-18 2016-12-09 St Microelectronics Crolles 2 Sas Procede de realisation d'une liaison electrique traversante et d'un condensateur traversant dans un substrat, et dispositif correspondant
US9105759B2 (en) 2013-11-27 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitive device and method of making the same
US10446325B2 (en) * 2017-09-29 2019-10-15 Advanced Semiconductor Engineering, Inc. Capacitor structures

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1052006A (zh) * 1989-11-20 1991-06-05 三星电子株式会社 半导体器件及其制造方法
EP1646072A2 (en) * 2004-10-08 2006-04-12 Rohm and Haas Electronic Materials, L.L.C. Capacitor structure
CN102339671A (zh) * 2010-07-21 2012-02-01 马长兆 一种平面叠层固体电容器
US20130181326A1 (en) * 2012-01-18 2013-07-18 International Business Machines Corporation Multilayer mim capacitor
JP2017513218A (ja) * 2014-03-25 2017-05-25 アイピーディーアイエイ コンデンサ構造
CN105514093A (zh) * 2016-01-22 2016-04-20 天津大学 基于硅通孔技术的半导体电容器及其制造方法、封装结构
CN107204323A (zh) * 2016-03-17 2017-09-26 台湾积体电路制造股份有限公司 半导体结构及其制造方法
CN107359153A (zh) * 2017-07-10 2017-11-17 宏衍微电子（大连）有限公司 具有沟槽结构的高容量硅电容器的制造方法

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Publication number Publication date
WO2020132884A1 (zh) 2020-07-02
EP3754725A1 (en) 2020-12-23
CN111615751B (zh) 2023-02-28
US20210005705A1 (en) 2021-01-07
US11239308B2 (en) 2022-02-01
EP3754725A4 (en) 2021-05-12

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