CN111613566B - 一种超薄晶圆转运装置 - Google Patents

一种超薄晶圆转运装置 Download PDF

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CN111613566B
CN111613566B CN202010472464.8A CN202010472464A CN111613566B CN 111613566 B CN111613566 B CN 111613566B CN 202010472464 A CN202010472464 A CN 202010472464A CN 111613566 B CN111613566 B CN 111613566B
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negative pressure
wafer
valve
pressure
vacuum
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CN111613566A (zh
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秦飞
张理想
赵帅
陈沛
安彤
代岩伟
公颜鹏
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Beijing University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

本发明提供了一种超薄晶圆转运装置，涉及半导体制造设备技术领域。该晶圆转运装置包括负压转运托盘和负压发生装置两部分。其特征在于：所述负压转运托盘和负压发生装置通过气压阀和压力枪活动接触方式连接，可分离。利用本发明提供的超薄晶圆转运装置和方法，可以实现超薄晶圆的加工、转运和晶圆级封装过程，对提高超薄晶圆的可制造性、降低晶圆加工损伤有重要意义。本发明具有如下特点：晶圆与转运托盘结合与分离采用真空吸附设计，实施方便，可重复利用，节约成本。负压转运托盘厚度较小，可应用于晶圆加工、转运和晶圆级封装过程，可有效提高超薄晶圆的可制造性。

Description

一种超薄晶圆转运装置
技术领域
本发明涉及半导体晶圆超精密加工领域，涉及一种超薄晶圆转运装置。
背景技术
半导体晶圆是集成电路主要的基体材料。随着高密度和小型化电子器件的增加，对晶圆的厚度要求更加苛刻。例如，三维(3D)封装要求硅晶圆厚度小于100μm。而另一方面，为降低晶圆的制造成本，晶圆的尺寸变的越来越大。如12英寸晶圆正在取代8英寸晶圆并取得大量应用。晶圆的超薄化和尺寸增大给晶圆的加工、转运以及封装制造带来了困难。目前业界主要利用玻璃或硅基板与超薄晶圆进行临时键合，以起到保护支撑的作用。然而，临时键合需要键合、解键合等复杂过程，成本较高。此外，键合过程使用的键合胶是一种耗材，键合胶的使用进一步加剧了封装成本。因此需要开发一套实施方便、成本较低的晶圆转运装置。
发明内容
为解决以上问题，本发明提出一种超薄晶圆转运装置，可实现对超薄晶圆的无损伤传输。该装置通过真空吸附的方式将晶圆与负压转运托盘进行临时键合，对晶圆进行支撑保护。设备结构简单，操作方便，可以反复利用，节约成本。
本发明采用如下技术方案：
一种超薄晶圆转运装置，其特征在于，包含负压转运托盘和负压发生装置；所述负压转运托盘包括真空吸盘、外腔壁、真空腔、内腔壁、气压阀、换气阀、放气阀；所述负压发生装置包含支撑托盘、压力枪、压力管、压力表、真空发生器；所述真空吸盘由透气面板和非透气面板)组成；所述负压转运托盘和负压发生装置通过气压阀和压力枪活动接触连接。
进一步，透气面板和非透气面板位于同一平面，所述透气面板和非透气面板材质为金属、玻璃、陶瓷、塑料的一种或组合。
进一步，所述真空腔内至少还有两个由内腔壁组成的腔室。
进一步，所述气压阀为单向换气阀。
进一步，根据权利要求1所述的晶圆超薄晶圆转运装置，其特征在于所述压力管可以是金属、玻璃、塑料、橡胶的一种或组合。
本发明可以取得如下有益效果：
1.本发明负压转运托盘和负压发生装置分离设计，厚度较小，可以同时用于晶圆加工、转运、封装工艺过程，实施方便。
2.本发明采用负压真空吸附设计，可以反复利用，成本较低。
附图说明
图1为转运装置示意图
图2为转运装置吸附晶圆示意图
图3为超薄晶圆转运过程示意图
图中，1-负压转运托盘，101-真空吸盘，102-外腔壁，103-真空腔，104-内腔壁，105-气压阀，106-换气阀，107-放气阀，101A-透气面板，101B-非透气面板，2-负压发生装置，201-支撑托盘，202-压力枪，203-压力管，204-压力表，205-真空发生器，3-晶圆
具体实施方式
为使本发明能够更加通俗易懂，下面结合附图对本发明的具体实施方式做详细的说明：
提供一种超薄晶圆转运装置，如图1所示，包含：负压转运托盘(1)和负压发生装置(2)。所述负压转运托盘(1)包括真空吸盘(101)、外腔壁(102)、真空腔(103)、内腔壁(104)、气压阀(105)、换气阀(106)、放气阀(107)；所述负压发生装置(2)包括支撑托盘(201)、压力枪(202)、压力管(203)、压力表(204)、真空发生器(205)；所述负压转运托盘(1)和负压发生装置(2)通过换气阀(106)和压力枪(202)活动接触连接。
图2为设备吸附晶圆示意图，使用设备时，将负压转运托盘(1)与负压发生装置(2)连接，换气阀(106)处于打开状态。将晶圆放置在真空吸盘(101)上方中心区域，开启真空发生器(205)，真空发生器的真空枪(202)在真空腔(103)内产生真空，随着真空度的增加，晶圆被逐渐吸附，真空发生器关闭。随后将负压转运托盘(1)和负压发生装置(2)分离，换气阀(106)进入关闭状态。晶圆因为压力差的作用被吸附在真空吸盘(101)表面。
分离后的负压转运托盘(1)和晶圆合为一体，如图3所示。依靠负压转运托盘的强度，可以对晶圆进行转运、晶圆级封装过程。当晶圆完成转运、晶圆级封装过程后，打开放气阀(107)使空气进入真空腔(103)内，将晶圆释放。
对本发明的实施例的描述是出于有效说明和描述本发明的目的，并非用以限定本发明，任何所述本领域的技术人员应当理解：在不脱离本发明的发明构思和范围的条件下，可对上述实施例进行变化。故本发明并不限定所披露的具体实施例，覆盖权利要求所定义的本发明的实质和范围内的修改。

Claims (3)

1.一种超薄晶圆转运装置，其特征在于：包含负压转运托盘（1）和负压发生装置（2）；所述负压转运托盘（1）包括真空吸盘（101）、外腔壁（102）、真空腔（103）、内腔壁（104）、气压阀（105）、换气阀（106）、放气阀（107）；所述负压发生装置（2）包含支撑托盘（201）、压力枪（202）、压力管（203）、压力表（204）、真空发生器（205）；所述真空吸盘（101）由透气面板（101A）和非透气面板（101B）组成；所述负压转运托盘（1）和负压发生装置（2）通过换气阀（106）和压力枪（202）活动接触连接；
透气面板（101A）和非透气面板（101B）位于同一平面，所述透气面板和非透气面板材质为金属、玻璃、陶瓷、塑料的一种或组合；
换气阀（106）与压力枪（202）接触连接后，处于换气状态，分离后处于气压关闭状态；
所述真空腔（103）内至少有两个由内腔壁（104）组成的腔室。
2.根据权利要求1所述的晶圆超薄晶圆转运装置，其特征在于：所述气压阀（105）为单向换气阀。
3.根据权利要求1所述的晶圆超薄晶圆转运装置，其特征在于：所述压力管（203）采用金属、玻璃、塑料、橡胶的一种或组合。
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281050A (ja) * 2006-04-04 2007-10-25 Miraial Kk 半導体ウエハのウエハトレイ

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CN104992921B (zh) * 2015-07-16 2017-09-01 北京工业大学 一种大尺寸超薄晶圆的夹持装置
CN204732387U (zh) * 2015-07-22 2015-10-28 成都嘉石科技有限公司 用于移动超薄晶圆的真空吸盘装置
CN206901306U (zh) * 2017-07-14 2018-01-19 成都海威华芯科技有限公司 一种真空吸附晶圆的装置
CN109256356B (zh) * 2018-09-28 2023-05-02 上海微松工业自动化有限公司 一种晶圆平整固定装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281050A (ja) * 2006-04-04 2007-10-25 Miraial Kk 半導体ウエハのウエハトレイ

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