CN111443230A - 具有可布线模制引线框的电流传感器设备 - Google Patents

具有可布线模制引线框的电流传感器设备 Download PDF

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CN111443230A
CN111443230A CN201911226548.7A CN201911226548A CN111443230A CN 111443230 A CN111443230 A CN 111443230A CN 201911226548 A CN201911226548 A CN 201911226548A CN 111443230 A CN111443230 A CN 111443230A
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current
conductor
current sensor
molded substrate
connector
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CN111443230B (zh
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J·丹格尔迈尔
R·M·沙勒
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本公开的实施例总体上涉及具有可布线模制引线框的电流传感器设备。一种电流传感器设备可以包括可布线模制引线框，其包括模制衬底。电流传感器设备可以包括导体和安装至模制衬底的半导体芯片。半导体芯片可以包括磁场传感器，磁场传感器通过模制衬底与导体电流隔离，并且被配置为感测由流过导体的电流创建的磁场。电流传感器设备可以包括一条或多条引线，其被配置为输出由半导体芯片生成的信号。一条或多条引线可以通过模制衬底与导体电流隔离。

Description

具有可布线模制引线框的电流传感器设备
技术领域
本公开的实施例总体上涉及传感器设备。
背景技术
电流传感器可以用于检测电线或其他导体中的电流，并且可以生成与检测电流成比例的信号。这种信息可以用于多种应用，并且感测到的电流参数可以用于控制电子系统。
发明内容
根据一些可能的实施方式，一种电流传感器设备可以包括可布线模制引线框，其包括模制衬底。电流传感器设备可以包括导体和安装至模制衬底的半导体芯片。半导体芯片可以包括磁场传感器，磁场传感器通过模制衬底与导体电流隔离并且被配置为感测由流过导体的电流创建的磁场。电流传感器设备可以包括一条或多条引线，其被配置为输出由半导体芯片生成的信号。一条或多条引线可以通过模制衬底与导体电流隔离。
根据一些可能的实施方式，一种半导体器件封装件可以包括由包括模制衬底的引线框构成的基板。半导体器件封装件可以包括与模制衬底相邻定位的导体。半导体器件封装件可以包括位于模制衬底上的电流传感器。模制衬底可以将电流传感器与导体电流隔离。半导体器件封装件可以包括与模制衬底相邻的一条或多条引线，并且该一条或多条引线被配置为输出信号，该信号由于测量由流过导体的电流所生成的磁场而由电流传感器生成。
根据一些可能的实施方式，一种用于制造半导体器件的方法可以包括蚀刻导电材料，以及将可浇注材料引入通过蚀刻导电材料而形成的空间中以形成模制衬底。该方法可以包括将包括磁场传感器的半导体芯片设置到模制衬底上，使得模制衬底将磁场传感器与导电材料电流隔离。
附图说明
图1至图3是本文描述的示例电流传感器设备的示图。
图4是电流传感器设备的示例性导电夹的示图。
图5是用于制造本文描述的电流传感器设备的示例工艺的流程图。
具体实施方式
以下示例实施方式的详细描述参考附图。不同附图中的相同附图标记可以标识相同或相似的元件。
电流传感器可以包括磁场传感器，该磁场传感器感测通过流过导体的电流生成的磁场，诸如在包括电流传感器的器件封装件内部或器件封装件外部的电流轨。这种磁性电流传感器不要求与导体接触来测量电流(与分流电阻电流传感器不同)，其可以用于改善高压部件(例如，应用电压)和低压部件(例如，电源电压、接地电压等)之间的电流隔离。例如，可以改善承载待测量的电流的高压部件(例如，导体、电流轨等)与感测电流的低压部件(例如，磁性电流传感器)和/或输出基于感测电流生成的信号的低压部件(例如，传感器引脚、互连、引线、导线接合等)之间的电流隔离。本文描述的一些技术改善了电流传感器设备的部件之间的电流隔离，从而通过减少或消除杂散电流来提高测量精度。此外，本文所描述的一些技术和装置允许电流传感器的灵活设计，降低生产成本，提高测量精度等。
图1是示例电流传感器设备100的侧视图和俯视图。如图1所示，电流传感器设备100包括引线框105。引线框105可以包括模制衬底110、导体115和/或引线120(例如，一条或多条引线120)。引线框105可以被称为可布线模制引线框，其使用模制衬底110来使不同部件(例如，高压部件和低压部件)电流隔离。如图所示，导体115可以与模制衬底110相邻(例如，邻接)。类似地，引线120可以与模制衬底110相邻。然而，导体115和(多个)引线120可能不会彼此相邻。
引线框105可以例如以下方式来形成：蚀刻导电材料(例如，金属，诸如铜等)以形成导体115和/或(多个)引线120，以及用可浇注材料填充由这种蚀刻形成的空间以形成模制衬底110(例如，当可浇注材料变硬时)。在一些实施方式中，导体115和(多个)引线120可以由相同的导电材料形成和/或可以由相同的导电材料组成。例如，可浇注材料可以包括液体材料、树脂、无芯液体树脂等。在一些情况下，为了改善电流隔离，可浇注材料和/或模制衬底110不包括导电材料(诸如铜等)。例如，可浇注材料和/或模制衬底110可以由聚合物材料组成。引线框105可以用作在半导体器件制造工艺中向其安装一个或多个部件的基板。
如图1所示，电流传感器设备100包括芯片125，诸如半导体芯片、集成电路、传感器芯片、电流传感器等。芯片125包括一个或多个磁场传感器，其被配置为感测和/或测量由流过导体115的电流生成的磁场(例如，一个或多个磁场分量)。例如，磁场传感器可包括传感器集成电路、霍尔效应传感器等。芯片125可以基于这种感测和/或测量生成信号，并且可以经由一条或多条引线120将信号输出到电流传感器设备100外部的部件。该信号可以经由诸如导线、总线、接合、导线接合等的连接器130提供给引线120。在一些实施方式中，电流传感器设备100可以包括多个芯片125，它们经由一个或多个连接器130和/或一条或多条引线120向外部设备输出信号。
如图所示，芯片125可以安装至模制衬底110。例如，导体115可以定位在模制衬底110的第一侧135，而芯片125可以定位和/或安装在模制衬底110的第二侧140(例如，如图所示，与第一侧135相对)。如附图标记145所示，模制衬底110可以将芯片125和/或芯片125的磁场传感器与导体115电流隔离(例如，电绝缘)。例如，芯片125可以是低压部件(例如，具有电源电压电位、连接到地等)，并且导体115可以是高压部件(例如，具有应用电源电位)。通过改善芯片125(和/或芯片125的磁场传感器)与导体115之间的电流隔离，电流传感器设备100可以具有改进的性能，诸如由于杂散电流的减少而提高的测量精度、改进的热管理等。
类似地并且如附图标记150所示，模制衬底110可以将(多个)引线120与导体115电流隔离(例如，电绝缘)。例如，引线120可以是低压部件，而导体115可以是高压部件。通过改善引线120和导体115之间的电流隔离，电流传感器设备100可以通过减少导体115和引线120之间的离子的潜动来改进性能，这可能由于杂散电流的减少、改进的热管理等而使得测量精度提高。通过使用可布线模制引线框，各种引线框可以被设计具有不同的潜动间隙(例如，导体115和引线120之间的距离)，从而提供更灵活的传感器设计。
在一些实施方式中，可以仅经由模制衬底110来实现上述电流隔离。在这种情况下，电流传感器设备100不在芯片125(和/或用于将芯片125安装至模制衬底110的安装材料)和导体115之间包括任何材料，除了模制衬底110。类似地，在一些情况下，电流传感器设备100不在引线120和导体115之间包括任何材料，除了模制衬底110。例如，图1所示的电流传感器设备100不在芯片125和导体115之间以及在引线120和导体115之间包括隔离小板或类似的电流隔离部件，除了模制衬底110。以这种方式，芯片125和导体115之间的较小距离可以通过仅使用用于电流隔离的模制衬底110实现(例如，与使用隔离小板或其他电流隔离部件或电流隔离层相比)，从而提高了由芯片125测量的磁信号的信噪比。
如图1所示，在一些实施方式中，导体可以包括电流传感器设备100和/或包括电流传感器设备100的半导体器件封装件内部的电流轨。在一些实施方式中，如下面结合图2更详细地描述的，电流轨可以在电流传感器设备100和/或包括电流传感器设备100的半导体器件封装件的外部。
如上所示，提供图1作为示例。其他示例可以不同于参照图1所描述的。
图2是示例电流传感器设备200的侧视图和俯视图。电流传感器设备200可以包括上面结合图1描述的一个或多个部件，诸如引线框105(例如，可布线模制引线框)、模制衬底110、导体115、引线120、芯片125、连接器130等。
电流传感器设备200是不包括内部电流轨的示例电流传感器设备。例如，电流轨可以在电流传感器设备200和/或包括电流传感器设备200的半导体器件封装件的外部。例如，外部电流轨可以设置到靠近电流传感器设备和/或电流传感器设备附接至其的印刷电路板(PCB)的顶层上。在一些实施方式中，导体115可以包括输入连接器205(例如，第一连接器)、输出连接器210(例如，第二连接器)和/或内部连接器215(例如，第三连接器)。在一些情况下，输入连接器205可以电连接至外部电流轨和/或可以将来自外部电流轨的电流输入至传感器设备200。类似地，输出连接器210可以电连接至外部电流轨和/或可以将来自电流传感器设备200的电流输出至外部电流轨。内部连接器215可以电连接输入连接器205和输出连接器210，使得电流经由输入连接器205输入、流过内部连接器215并且经由输出连接器210输出。附加地或备选地，外部电流轨可以附接至一个或多个支撑结构220以提供机械支撑。
备选地，外部电流轨可以不电连接至输入连接器205和/或输出连接器210。附加地或备选地，外部电流轨可以不连接至支撑结构220。例如，外部电流轨可以在PCB的隐埋层(例如，不是顶层)中实施，并且电流传感器设备能够测量磁场，该磁场通过由于电流传感器设备相对于外部电流轨的接近而流过外部电流轨的电流所生成(例如，电流传感器设备可附接至PCB)。在这种情况下，(多个)支撑结构220、输入连接器205和/或输出连接器210可以为电流传感器设备提供机械支撑(例如，机械固定和/或稳定性)，可以协助实现半导体器件封装件相隔等。备选地，在一些实施方式中，电流传感器设备可以不包括输入连接器205、输出连接器210和/或(多个)支撑结构220中的一个或多个。
如图所示，内部连接器215可以承载电流通过芯片125(例如，在阈值接近范围内，使得芯片125可以测量由电流生成的磁场)。芯片125可以测量一个或多个磁场分量，并且可以如本文别处所述向一条或多条引线120提供基于这种(多个)测量而生成的信号。在一些实施方式中，模制衬底110可以以上文结合图1所述的类似方式使芯片125和/或芯片125的磁场传感器与导体115电流隔离。例如，模制衬底110可以使芯片125与输入连接器205、输出连接器210和/或内部连接器215电流隔离。通过改进芯片125(和/或芯片125的磁场传感器)和导体115之间的电流隔离，电流传感器设备200可以具有改进的性能，诸如由于杂散电流的减少而提高的测量精度、改进的热管理等。
如图2进一步所示，电流传感器设备200的引线框105可以包括模制衬底110、一条或多条引线120、一个或多个支撑结构220等。支撑结构220可以包括支撑销等。支撑结构220可以为电流传感器设备200提供支撑，可以形成引线框105，可以协助将电流传感器设备200安装至另一设备和/或结构，可以形成将填充可浇注材料以形成模制衬底110的结构等等。如图所示，(多个)支撑结构220、(多个)引线120和/或导体115(例如，输入连接器205、输出连接器210和/或内部连接器215)可以与模制衬底110相邻。然而，(多个)支撑结构220和(多个)引线120可以不彼此相邻。此外，(多个)支撑结构220和导体115可以不彼此相邻。此外，(多个)引线120和导体115可以不彼此相邻。
例如，引线框105可以通过以下方式形成：蚀刻导电材料(例如，金属，诸如铜等)以形成(多个)支撑结构220和/或(多个)引线120(和/或导体115)，以及用可浇注材料填充由这种蚀刻形成的空间以形成模制衬底110(例如，当可浇注材料变硬时)。在一些实施方式中，(多个)支撑结构220和(多个)引线120可以由相同的导电材料形成和/或可以由相同的导电材料组成。
如上所示，提供图2作为示例。其他示例可以不同于参照图2所描述的。
图3是示例电流传感器设备300的侧视图和俯视图。电流传感器设备300可以包括上文结合图1和/或图2描述的一个或多个部件，诸如引线框105、模制衬底110、导体115、引线120、芯片125、连接器130等。如图3所示(并且如本文其它地方所述)，芯片125可以包括一个或多个磁场传感器305，诸如传感器集成电路、霍尔效应传感器等。
如图3所示，电流传感器设备300可以包括导电夹310。导电夹310可以由导电材料(诸如金属(例如，铜)等)组成。导电夹310可以电连接至导体115，并且可以被配置为承载电流流过导体115、经过芯片125和/或芯片125的(多个)磁场传感器305(例如，在阈值接近范围内，使得(多个)磁场传感器305可以精确地测量由电流生成的磁场)。例如且如图所示，导电夹310可以电连接至输入连接器205和输出连接器210(例如，导电夹310可以是上文结合图2描述的内部连接器215)。
导电夹310可以承载电流从较远离芯片125的第一位置315到较靠近芯片125的第二位置320，然后到较远离芯片125的第三位置325。在一些实施方式中，当导电夹310不包括在电流传感器设备中时，芯片125可以安装在导体115上方或下方(例如，如图1所示)。在一些实施方式中，当导电夹310包括在电流传感器设备中时，芯片125不安装在导体115上方或下方。在这种情况下，导电夹可以承载电流通过芯片125。这允许电流传感器设备具有更大的设计灵活性，并且可以进一步改善电流隔离。
如图3进一步所示，导电夹310可以与芯片125电流隔离。例如，电流传感器设备300可以包括相隔区域330，其使导电夹310与芯片125电流隔离。相隔区域330可以包括或者可以是导电夹310最接近芯片125的区域。相隔区域330可以由模制层335组成。模制层335可以由可浇注材料形成(例如，硬化之后)，诸如液体材料、树脂、无芯液体树脂等。在一些实施方式中，模制层335不包括导电材料，诸如铜等。例如，模制层335可以由聚合物材料组成。在一些实施方式中，模制衬底110和模制层335可以由相同材料组成。在一些实施方式中，模制衬底110和模制层335可以由不同材料组成。
在一些实施方式中，导电夹310和芯片125之间的电流隔离可以仅通过模制层335实现。在这种情况下，电流传感器设备300不在芯片125和导电夹310之间包括任何材料，除了模制层335。例如，图3所示的电流传感器设备300不在芯片125和导电夹310之间包括隔离小板或类似的电流隔离部件，除了模制层335。以这种方式，芯片125和导电夹310之间的较小距离可以通过仅使用模制层335用于电流隔离来实现(例如，与使用隔离小板或其他电流隔离部件或电流隔离层相比)，从而提高由芯片125测量的磁信号的信噪比。
例如，电流传感器设备300可以通过以下方式形成：蚀刻导电材料(例如，金属，诸如铜等)来形成导体115、(多个)引线120和/或(多个)支撑结构220，以及用第一可浇注材料填充通过这种蚀刻形成的空间以形成模制衬底110(例如，当第一可浇注材料变硬时)。芯片125可以设置到(例如，安装在)模制衬底110上。导电夹310可以设置到(例如，安装在)导体115上。可以引入第二可浇注材料来形成模制层335，包括相隔区域330。在一些实施方式中，第一可浇注材料和第二可浇注材料是相同的材料。在一些实施方式中，第一可浇注材料和第二可浇注材料是不同的材料。
如图3所示，在一些实施方式中，导电夹310可以具有拱形(例如，尖拱形)。如图所示，拱的底部可以连接至导体115，并且拱的顶部可以经过芯片125附近(例如，上方)。导电夹可以具有另一形状，诸如半环形、半圆形等。导电夹310的附加形状如图4所示。
如本文所述，使用可布线模制引线框可以允许本文所述的电流传感器设备中的导电材料(例如，用于导体115、(多个)引线120、(多个)支撑销220等)具有宽范围的厚度(例如，在一些情况下达到0.5毫米)。例如，可布线模制引线框可以允许比使用传统引线框更厚的导电材料，从而通过降低导体115(例如，电流轨)的欧姆电阻而在电流传感器设备中提供改进的电流能力(例如，电流密度)。此外，可以对生产线工艺进行标准化，以使用用于制造各种传感器的较小范围的厚度或较少厚度的导电材料，从而标准化生产工艺并降低生产成本。
如上所示，提供图3作为示例。其他示例可以不同于参照图3所描述的。
图4是用于电流传感器设备的示例导电夹310的示图。图4示出了具有不同形状的导电夹310的示例俯视图400、410、420和430。导电夹310的形状可以设计为控制在(多个)磁场传感器305附近流动的电流的量(例如，相对量)。
如俯视图400所示，在一些实施方式中，电流传感器设备和/或导电夹可以被设计为使得电流直接在(多个)磁场传感器305上方流动。如顶视图410、420和430所示，在一些实施方式中，电流传感器设备和/或导电夹可以被设计为使得电流不直接在(多个)磁场传感器305的上方流动。
如俯视图410所示，在一些实施方式中，(多个)磁场传感器305可以沿着从输入连接器205到输出连接器210的直接路径定位。例如，(多个)磁场传感器305可以位于输入连接器205和输出连接器210之间(例如，当从上面观看时)。如俯视图400、420和430所示，在一些实施方式中，(多个)磁场传感器可以不沿着从输入连接器205到输出连接器210的直接路径定位。例如，(多个)磁场传感器305可以不位于输入连接器205和输出连接器210之间(例如，当从上面观看时)。
如俯视图430所示，在一些实施方式中，导电夹310可以包括第一部分440，其被配置为承载电流直接从输入连接器205到输出连接器210，并且可以包括第二部分450，其承载电流通过(多个)磁场传感器305。第一部分440和第二部分450都可以承载电流从输入连接器205到输出连接器210，但是可以沿着不同的路径承载电流。例如，与第一部分440相比，第二部分450可以承载更接近(多个)磁场传感器305的电流。附加地或备选地，第二部分450可以在(多个)磁场传感器305的阈值接近范围内承载电流，并且第一部分440可以不在阈值接近范围内承载电流。附加地或备选地，第一部分440和第二部分450可以承载流过导电夹310的总电流的不同部分。例如，第一部分440可以承载流过导电夹310的总电流的95％，并且第二部分450可以承载通过(多个)磁场传感器305的总电流的5％(例如，在(多个)磁场传感器305的阈值接近范围内)。这可以允许导电夹310和/或电流传感器设备的灵活设计，并且可以允许使用不同类型和/或灵敏度的(多个)磁场传感器305。
本文所述的导电夹310可以通过降低欧姆电阻在电流传感器中提供改进的电流能力(例如，电流密度)。此外，由于导电夹310的形状可以灵活地设计为适合于传感器的应用(例如，本文描述的电流传感器设备)，所以标准化基板和/或引线框可以与各种不同的导电夹设计一起使用，从而标准化生产工艺并降低生产成本。
如上所示，提供图4作为示例。其他示例可以不同于参照图4所描述的。
图5是用于制造电流传感器的示例工艺500的流程图。
如图5所示，如上所述，工艺500可以包括蚀刻导电材料(框510)，将可浇注材料引入通过蚀刻导电材料形成的空间，以形成模制衬底(框520)，以及将包括磁场传感器的半导体芯片设置到模制衬底上，使得模制衬底使磁场传感器与导电材料电流隔离(框530)。
在一些实施方式中，工艺500可以包括附加方面，诸如下文和/或本文其他地方描述的一个或多个方面。
例如，工艺500可以包括将导电夹设置到导电材料上和/或引入可浇注材料以在导电夹和半导体芯片之间形成相隔区域。相隔区域可以使导电夹和半导体芯片电流隔离。
在一些实施方式中，模制衬底使导电材料与一条或多条引线电流隔离，该一条或多条引线被配置为输出由半导体芯片生成的信号。例如，导电材料可以包括：半导体器件内部的内部电流轨；或者，用于从半导体器件外部的外部电流轨输入电流的第一连接器以及用于向外部电流轨输出电流的第二连接器。
尽管图5示出了工艺500的示例框，但是在一些实施方式中，与图5所示的框相比，工艺500可以包括附加框、更少的框、不同的框或不同布置的框。附加地或备选地，可以并行地执行工艺500的两个或多个框。
上述公开提供了说明和描述，但并不旨在穷举或将实施方式限于所公开的精确形式。可以根据上述公开做出修改和变化，或者可以从实施方式的实践中获得。
如本文所使用的，术语部件旨在被广义地解释为硬件、固件或者硬件和软件的组合。
本文结合阈值描述一些实施方式。如本文所使用的，满足阈值可以指大于阈值、多于阈值、高于阈值、大于或等于阈值、小于阈值、少于阈值、低于阈值、小于或等于阈值、等于阈值等的值。
即使在权利要求中引用和/或在说明书中公开了特征的特定组合，但这些组合并不旨在限制可能实施方式的公开。事实上，这些特征中的许多可以在权利要求中未具体引用和/或在说明书中未公开的方式组合。尽管下面列出的每个从属权利要求可以直接从属于仅一条权利要求，但可能实施的公开包括每个从属权利要求与权利要求集合中的每个其他权利要求的组合。
除非明确说明，否则本文中使用的任何元素、行为或指令不应当被解释为关键或必须的。此外，如本文使用的，冠词“一”和“一个”旨在包括一项或多项，并且可以与“一个或多个”互换使用。此外，如本文所使用的，术语“集合”旨在包括一项或多项(例如，相关项、不相关项、相关和不相关项的组合等)，并且可以与“一个或多个”互换使用。在只打算使用一项的情况下，使用术语“一个”或类似语言。此外，如本文所使用的，术语“具有”、“含有”、“包括”等是开放式术语。此外，除非另有明确说明，否则措辞“基于”旨在表示“至少部分地基于”。

Claims (20)

1.一种电流传感器设备，包括：
可布线模制引线框，其包括模制衬底；
导体；
半导体芯片，其安装至所述模制衬底，其中，所述半导体芯片包括磁场传感器，所述磁场传感器通过所述模制衬底与所述导体电流隔离，并且被配置为感测由流过所述导体的电流创建的磁场；以及
一条或多条引线，其被配置为输出由所述半导体芯片生成的信号，其中，所述一条或多条引线通过所述模制衬底与所述导体电流隔离。
2.根据权利要求1所述的电流传感器设备，其中，所述电流传感器设备不包括使用除所述模制衬底之外的任何材料使所述磁场传感器与所述导体电流隔离的隔离小板。
3.根据权利要求1所述的电流传感器设备，其中，所述模制衬底不包括导电材料。
4.根据权利要求1所述的电流传感器设备，其中，所述导体包括在所述电流传感器设备内部的电流轨。
5.根据权利要求1所述的电流传感器设备，其中，所述导体包括用于从所述电流传感器设备外部的电流轨输入电流的第一连接器以及用于向所述电流轨输出电流的第二连接器。
6.根据权利要求1所述的电流传感器设备，还包括导电夹，所述导电夹电连接至所述导体，并且被配置为从较远离所述半导体芯片的第一位置到较接近所述半导体芯片的第二位置承载流过所述导体的电流。
7.根据权利要求6所述的电流传感器设备，其中，所述导电夹与所述半导体芯片电流隔离。
8.根据权利要求7所述的电流传感器设备，其中，所述电流传感器设备不包括使所述导电夹与所述半导体芯片电流隔离的隔离小板。
9.根据权利要求6所述的电流传感器设备，其中，所述导电夹包括被配置为直接从输入连接器到输出连接器承载电流的第一部分以及被配置为从所述第一位置到所述第二位置承载电流的第二部分。
10.一种半导体器件封装件，包括：
基板，其由包括模制衬底的引线框构成；
导体，其被定位为与所述模制衬底相邻；
电流传感器，其位于所述模制衬底上，其中，所述模制衬底使所述电流传感器与所述导体电流隔离；以及
一条或多条引线，其与所述模制衬底相邻，并且被配置为输出由于测量由流过所述导体的电流所生成的磁场而由所述电流传感器生成的信号。
11.根据权利要求10所述的半导体器件封装件，其中，所述引线框是可布线模制引线框。
12.根据权利要求10所述的半导体器件封装件，其中，所述模制衬底使所述一条或多条引线与所述导体电流隔离。
13.根据权利要求10所述的半导体器件封装件，其中，所述导体包括在所述半导体器件封装件内部的电流轨。
14.根据权利要求10所述的半导体器件封装件，其中，所述导体包括用于从所述半导体器件封装件外部的电流轨输入电流的第一连接器以及用于向所述电流轨输出电流的第二连接器。
15.根据权利要求10所述的半导体器件封装件，还包括：导电夹，电连接至所述导体，并且被配置为从较远离所述电流传感器的第一位置到较接近所述电流传感器的第二位置承载流过所述导体的电流。
16.根据权利要求10所述的半导体器件封装件，其中，导电夹通过模制层与所述电流传感器电流隔离。
17.一种用于制造半导体器件的方法，包括：
蚀刻导电材料；
将可浇注材料引入通过蚀刻所述导电材料而形成的空间中，以形成模制衬底；以及
将包括磁场传感器的半导体芯片设置到所述模制衬底上，使得所述模制衬底将所述磁场传感器与所述导电材料电流隔离。
18.根据权利要求17所述的方法，还包括：
将导电夹设置到所述导电材料上；以及
引入可浇注材料，以在所述导电夹与所述半导体芯片之间形成相隔区域。
19.根据权利要求17所述的方法，其中，所述模制衬底使所述导电材料与一条或多条引线电流隔离，所述一条或多条引线被配置为输出由所述半导体芯片生成的信号。
20.根据权利要求17所述的方法，其中，所述导电材料包括：
内部电流轨，其在所述半导体器件的内部，或者
第一连接器，其用于从所述半导体器件外部的外部电流轨输入电流，以及第二连接器，其用于向所述外部电流轨输出电流。
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