CN111199960B - 半导体装置及其制造方法、以及电力转换装置 - Google Patents

半导体装置及其制造方法、以及电力转换装置 Download PDF

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Publication number
CN111199960B
CN111199960B CN201911119678.0A CN201911119678A CN111199960B CN 111199960 B CN111199960 B CN 111199960B CN 201911119678 A CN201911119678 A CN 201911119678A CN 111199960 B CN111199960 B CN 111199960B
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base plate
metal member
power module
view
sectional
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Chinese (zh)
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CN111199960A (zh
Inventor
真船正行
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/02Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/027Mechanical treatments, e.g. deforming, punching or cutting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/15Containers comprising an insulating or insulated base
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42Fillings
    • H10W76/47Solid or gel fillings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60Seals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00Packaging processes not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CN201911119678.0A 2018-11-20 2019-11-15 半导体装置及其制造方法、以及电力转换装置 Active CN111199960B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018217241A JP7045975B2 (ja) 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置
JP2018-217241 2018-11-20

Publications (2)

Publication Number Publication Date
CN111199960A CN111199960A (zh) 2020-05-26
CN111199960B true CN111199960B (zh) 2024-05-31

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CN201911119678.0A Active CN111199960B (zh) 2018-11-20 2019-11-15 半导体装置及其制造方法、以及电力转换装置

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Country Link
US (1) US11587797B2 (https=)
JP (1) JP7045975B2 (https=)
CN (1) CN111199960B (https=)
DE (1) DE102019217489A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021132080A (ja) * 2020-02-18 2021-09-09 富士電機株式会社 半導体装置
CN116686086A (zh) * 2021-02-03 2023-09-01 罗姆股份有限公司 半导体装置
JP7751178B2 (ja) * 2021-06-17 2025-10-08 ミネベアパワーデバイス株式会社 パワー半導体モジュール
JP7676993B2 (ja) * 2021-06-25 2025-05-15 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP7800022B2 (ja) * 2021-08-27 2026-01-16 富士電機株式会社 半導体装置
EP4174928A1 (de) * 2021-10-28 2023-05-03 Siemens Aktiengesellschaft Halbleiterbauelement mit gedämpften bondflächen in einem gehäuse mit umspritzten pins
WO2024062633A1 (ja) * 2022-09-22 2024-03-28 株式会社レゾナック 積層体及び積層体の製造方法
JP2024090870A (ja) * 2022-12-23 2024-07-04 株式会社レゾナック 積層体及び積層体の製造方法
EP4513531B1 (en) * 2023-08-21 2025-10-01 Infineon Technologies AG Housing, semiconductor module comprising a housing, and method for assembling a semiconductor module
WO2025204393A1 (ja) * 2024-03-26 2025-10-02 住友電気工業株式会社 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165181A (ja) * 2002-06-26 2004-06-10 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
JP2007305643A (ja) * 2006-05-09 2007-11-22 Fuji Electric Device Technology Co Ltd 半導体装置
CN102347289A (zh) * 2010-07-30 2012-02-08 赛米控电子股份有限公司 具有至少一个用于衬底的定位装置的功率半导体模块
JP2014120592A (ja) * 2012-12-17 2014-06-30 Daikin Ind Ltd パワーモジュール
CN106206475A (zh) * 2014-09-24 2016-12-07 三星电机株式会社 功率模块封装件及其制造方法
CN106298700A (zh) * 2015-06-29 2017-01-04 富士电机株式会社 半导体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268102A (ja) 1993-01-13 1994-09-22 Fuji Electric Co Ltd 樹脂封止形半導体装置
FR2833802B1 (fr) 2001-12-13 2004-03-12 Valeo Electronique Module de puissance et ensemble de modules de puissance
EP1595287B1 (de) * 2003-02-13 2006-05-10 Infineon Technologies AG Elektronisches bauteil mit halbleiterchip und verfahren zur herstellung desselben
CN104067387B (zh) 2012-03-22 2016-12-14 三菱电机株式会社 半导体装置及其制造方法
JP2014011236A (ja) 2012-06-28 2014-01-20 Honda Motor Co Ltd 半導体装置、並びに、半導体装置の製造装置及び製造方法
WO2015111202A1 (ja) * 2014-01-27 2015-07-30 株式会社日立製作所 半導体モジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165181A (ja) * 2002-06-26 2004-06-10 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
JP2007305643A (ja) * 2006-05-09 2007-11-22 Fuji Electric Device Technology Co Ltd 半導体装置
CN102347289A (zh) * 2010-07-30 2012-02-08 赛米控电子股份有限公司 具有至少一个用于衬底的定位装置的功率半导体模块
JP2014120592A (ja) * 2012-12-17 2014-06-30 Daikin Ind Ltd パワーモジュール
CN106206475A (zh) * 2014-09-24 2016-12-07 三星电机株式会社 功率模块封装件及其制造方法
CN106298700A (zh) * 2015-06-29 2017-01-04 富士电机株式会社 半导体装置

Also Published As

Publication number Publication date
JP2020088053A (ja) 2020-06-04
CN111199960A (zh) 2020-05-26
US20200161145A1 (en) 2020-05-21
JP7045975B2 (ja) 2022-04-01
DE102019217489A1 (de) 2020-05-20
US11587797B2 (en) 2023-02-21

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