JP7045975B2 - 半導体装置およびその製造方法、ならびに電力変換装置 - Google Patents

半導体装置およびその製造方法、ならびに電力変換装置 Download PDF

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Publication number
JP7045975B2
JP7045975B2 JP2018217241A JP2018217241A JP7045975B2 JP 7045975 B2 JP7045975 B2 JP 7045975B2 JP 2018217241 A JP2018217241 A JP 2018217241A JP 2018217241 A JP2018217241 A JP 2018217241A JP 7045975 B2 JP7045975 B2 JP 7045975B2
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base plate
metal
power module
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case
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JP2018217241A
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Japanese (ja)
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JP2020088053A (ja
JP2020088053A5 (https=
Inventor
正行 眞舩
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2018217241A priority Critical patent/JP7045975B2/ja
Priority to US16/583,096 priority patent/US11587797B2/en
Priority to DE102019217489.2A priority patent/DE102019217489A1/de
Priority to CN201911119678.0A priority patent/CN111199960B/zh
Publication of JP2020088053A publication Critical patent/JP2020088053A/ja
Publication of JP2020088053A5 publication Critical patent/JP2020088053A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/027—Mechanical treatments, e.g. deforming, punching or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/47—Solid or gel fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2018217241A 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置 Active JP7045975B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018217241A JP7045975B2 (ja) 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置
US16/583,096 US11587797B2 (en) 2018-11-20 2019-09-25 Semiconductor device, method for manufacturing the same, and power converter
DE102019217489.2A DE102019217489A1 (de) 2018-11-20 2019-11-13 Halbleitervorrichtung, Verfahren zu deren Herstellung, und Leistungswandler
CN201911119678.0A CN111199960B (zh) 2018-11-20 2019-11-15 半导体装置及其制造方法、以及电力转换装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018217241A JP7045975B2 (ja) 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置

Publications (3)

Publication Number Publication Date
JP2020088053A JP2020088053A (ja) 2020-06-04
JP2020088053A5 JP2020088053A5 (https=) 2021-01-14
JP7045975B2 true JP7045975B2 (ja) 2022-04-01

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JP2018217241A Active JP7045975B2 (ja) 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置

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US (1) US11587797B2 (https=)
JP (1) JP7045975B2 (https=)
CN (1) CN111199960B (https=)
DE (1) DE102019217489A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021132080A (ja) * 2020-02-18 2021-09-09 富士電機株式会社 半導体装置
CN116686086A (zh) * 2021-02-03 2023-09-01 罗姆股份有限公司 半导体装置
JP7751178B2 (ja) * 2021-06-17 2025-10-08 ミネベアパワーデバイス株式会社 パワー半導体モジュール
JP7676993B2 (ja) * 2021-06-25 2025-05-15 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP7800022B2 (ja) * 2021-08-27 2026-01-16 富士電機株式会社 半導体装置
EP4174928A1 (de) * 2021-10-28 2023-05-03 Siemens Aktiengesellschaft Halbleiterbauelement mit gedämpften bondflächen in einem gehäuse mit umspritzten pins
WO2024062633A1 (ja) * 2022-09-22 2024-03-28 株式会社レゾナック 積層体及び積層体の製造方法
JP2024090870A (ja) * 2022-12-23 2024-07-04 株式会社レゾナック 積層体及び積層体の製造方法
EP4513531B1 (en) * 2023-08-21 2025-10-01 Infineon Technologies AG Housing, semiconductor module comprising a housing, and method for assembling a semiconductor module
WO2025204393A1 (ja) * 2024-03-26 2025-10-02 住友電気工業株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305643A (ja) 2006-05-09 2007-11-22 Fuji Electric Device Technology Co Ltd 半導体装置
JP2014120592A (ja) 2012-12-17 2014-06-30 Daikin Ind Ltd パワーモジュール

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268102A (ja) 1993-01-13 1994-09-22 Fuji Electric Co Ltd 樹脂封止形半導体装置
FR2833802B1 (fr) 2001-12-13 2004-03-12 Valeo Electronique Module de puissance et ensemble de modules de puissance
JP2004165181A (ja) * 2002-06-26 2004-06-10 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
EP1595287B1 (de) * 2003-02-13 2006-05-10 Infineon Technologies AG Elektronisches bauteil mit halbleiterchip und verfahren zur herstellung desselben
DE102010038723B4 (de) * 2010-07-30 2014-08-14 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit mindestens einer Positioniervorrichtung für ein Substrat
CN104067387B (zh) 2012-03-22 2016-12-14 三菱电机株式会社 半导体装置及其制造方法
JP2014011236A (ja) 2012-06-28 2014-01-20 Honda Motor Co Ltd 半導体装置、並びに、半導体装置の製造装置及び製造方法
WO2015111202A1 (ja) * 2014-01-27 2015-07-30 株式会社日立製作所 半導体モジュール
KR20160035916A (ko) * 2014-09-24 2016-04-01 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
JP6813259B2 (ja) * 2015-06-29 2021-01-13 富士電機株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305643A (ja) 2006-05-09 2007-11-22 Fuji Electric Device Technology Co Ltd 半導体装置
JP2014120592A (ja) 2012-12-17 2014-06-30 Daikin Ind Ltd パワーモジュール

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Publication number Publication date
JP2020088053A (ja) 2020-06-04
CN111199960B (zh) 2024-05-31
CN111199960A (zh) 2020-05-26
US20200161145A1 (en) 2020-05-21
DE102019217489A1 (de) 2020-05-20
US11587797B2 (en) 2023-02-21

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