DE102019217489A1 - Halbleitervorrichtung, Verfahren zu deren Herstellung, und Leistungswandler - Google Patents

Halbleitervorrichtung, Verfahren zu deren Herstellung, und Leistungswandler Download PDF

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Publication number
DE102019217489A1
DE102019217489A1 DE102019217489.2A DE102019217489A DE102019217489A1 DE 102019217489 A1 DE102019217489 A1 DE 102019217489A1 DE 102019217489 A DE102019217489 A DE 102019217489A DE 102019217489 A1 DE102019217489 A1 DE 102019217489A1
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DE
Germany
Prior art keywords
base plate
metal component
power module
housing component
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102019217489.2A
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German (de)
English (en)
Inventor
Masayuki Mafune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102019217489A1 publication Critical patent/DE102019217489A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/027—Mechanical treatments, e.g. deforming, punching or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/47—Solid or gel fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE102019217489.2A 2018-11-20 2019-11-13 Halbleitervorrichtung, Verfahren zu deren Herstellung, und Leistungswandler Pending DE102019217489A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018217241A JP7045975B2 (ja) 2018-11-20 2018-11-20 半導体装置およびその製造方法、ならびに電力変換装置
JP2018-217241 2018-11-20

Publications (1)

Publication Number Publication Date
DE102019217489A1 true DE102019217489A1 (de) 2020-05-20

Family

ID=70470118

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102019217489.2A Pending DE102019217489A1 (de) 2018-11-20 2019-11-13 Halbleitervorrichtung, Verfahren zu deren Herstellung, und Leistungswandler

Country Status (4)

Country Link
US (1) US11587797B2 (https=)
JP (1) JP7045975B2 (https=)
CN (1) CN111199960B (https=)
DE (1) DE102019217489A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4174928A1 (de) * 2021-10-28 2023-05-03 Siemens Aktiengesellschaft Halbleiterbauelement mit gedämpften bondflächen in einem gehäuse mit umspritzten pins

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021132080A (ja) * 2020-02-18 2021-09-09 富士電機株式会社 半導体装置
CN116686086A (zh) * 2021-02-03 2023-09-01 罗姆股份有限公司 半导体装置
JP7751178B2 (ja) * 2021-06-17 2025-10-08 ミネベアパワーデバイス株式会社 パワー半導体モジュール
JP7676993B2 (ja) * 2021-06-25 2025-05-15 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP7800022B2 (ja) * 2021-08-27 2026-01-16 富士電機株式会社 半導体装置
WO2024062633A1 (ja) * 2022-09-22 2024-03-28 株式会社レゾナック 積層体及び積層体の製造方法
JP2024090870A (ja) * 2022-12-23 2024-07-04 株式会社レゾナック 積層体及び積層体の製造方法
EP4513531B1 (en) * 2023-08-21 2025-10-01 Infineon Technologies AG Housing, semiconductor module comprising a housing, and method for assembling a semiconductor module
WO2025204393A1 (ja) * 2024-03-26 2025-10-02 住友電気工業株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268102A (ja) 1993-01-13 1994-09-22 Fuji Electric Co Ltd 樹脂封止形半導体装置
FR2833802B1 (fr) 2001-12-13 2004-03-12 Valeo Electronique Module de puissance et ensemble de modules de puissance
JP2004165181A (ja) * 2002-06-26 2004-06-10 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置
EP1595287B1 (de) * 2003-02-13 2006-05-10 Infineon Technologies AG Elektronisches bauteil mit halbleiterchip und verfahren zur herstellung desselben
JP4882495B2 (ja) 2006-05-09 2012-02-22 富士電機株式会社 半導体装置
DE102010038723B4 (de) * 2010-07-30 2014-08-14 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit mindestens einer Positioniervorrichtung für ein Substrat
CN104067387B (zh) 2012-03-22 2016-12-14 三菱电机株式会社 半导体装置及其制造方法
JP2014011236A (ja) 2012-06-28 2014-01-20 Honda Motor Co Ltd 半導体装置、並びに、半導体装置の製造装置及び製造方法
JP6094197B2 (ja) 2012-12-17 2017-03-15 ダイキン工業株式会社 パワーモジュール
WO2015111202A1 (ja) * 2014-01-27 2015-07-30 株式会社日立製作所 半導体モジュール
KR20160035916A (ko) * 2014-09-24 2016-04-01 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
JP6813259B2 (ja) * 2015-06-29 2021-01-13 富士電機株式会社 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4174928A1 (de) * 2021-10-28 2023-05-03 Siemens Aktiengesellschaft Halbleiterbauelement mit gedämpften bondflächen in einem gehäuse mit umspritzten pins
WO2023072510A1 (de) * 2021-10-28 2023-05-04 Siemens Aktiengesellschaft Halbleiterbauelement mit gedämpften bondflächen bei einem gehäuse mit umspritzten pins
US12444671B2 (en) 2021-10-28 2025-10-14 Siemens Aktiengesellschaft Semiconductor component with damped bonding surfaces in a package with encapsulated pins

Also Published As

Publication number Publication date
JP2020088053A (ja) 2020-06-04
CN111199960B (zh) 2024-05-31
CN111199960A (zh) 2020-05-26
US20200161145A1 (en) 2020-05-21
JP7045975B2 (ja) 2022-04-01
US11587797B2 (en) 2023-02-21

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