CN111093986B - 保护膜形成用复合片及半导体芯片的制造方法 - Google Patents

保护膜形成用复合片及半导体芯片的制造方法 Download PDF

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Publication number
CN111093986B
CN111093986B CN201880059994.0A CN201880059994A CN111093986B CN 111093986 B CN111093986 B CN 111093986B CN 201880059994 A CN201880059994 A CN 201880059994A CN 111093986 B CN111093986 B CN 111093986B
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protective film
forming
film
energy ray
curable
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Chinese (zh)
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CN111093986A (zh
Inventor
小桥力也
稻男洋一
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Lintec Corp
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Lintec Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laminated Bodies (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
CN201880059994.0A 2017-10-27 2018-10-25 保护膜形成用复合片及半导体芯片的制造方法 Active CN111093986B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-208434 2017-10-27
JP2017208434 2017-10-27
PCT/JP2018/039642 WO2019082961A1 (ja) 2017-10-27 2018-10-25 保護膜形成用複合シート、及び半導体チップの製造方法

Publications (2)

Publication Number Publication Date
CN111093986A CN111093986A (zh) 2020-05-01
CN111093986B true CN111093986B (zh) 2022-03-11

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CN201880059994.0A Active CN111093986B (zh) 2017-10-27 2018-10-25 保护膜形成用复合片及半导体芯片的制造方法

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Country Link
JP (1) JP7132938B2 (ja)
KR (1) KR102564171B1 (ja)
CN (1) CN111093986B (ja)
TW (1) TWI798277B (ja)
WO (1) WO2019082961A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102560242B1 (ko) * 2017-10-27 2023-07-26 린텍 가부시키가이샤 보호막 형성용 복합 시트 및 반도체 칩의 제조 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1275686A4 (en) * 2000-03-15 2003-06-25 Kagoshima Prefecture METHOD FOR PRODUCING RECYCLED, EXPANDED POLYSTYRENE RESIN PARTICLES
CN1848564A (zh) * 2001-03-09 2006-10-18 精工爱普生株式会社 发光元件的制造方法、半导体激光器及其制造方法
WO2011147523A1 (en) * 2010-05-27 2011-12-01 Merck Patent Gmbh Formulation and method for preparation of organic electronic devices
CN103805106A (zh) * 2012-11-12 2014-05-21 琳得科株式会社 水分散型粘着剂组合物和再剥离性粘着片的制备方法及再剥离性粘着片
CN104080875A (zh) * 2012-02-27 2014-10-01 日东电工株式会社 粘合带
WO2017073627A1 (ja) * 2015-10-29 2017-05-04 リンテック株式会社 保護膜形成用フィルム及び保護膜形成用複合シート
JP2017194633A (ja) * 2016-04-22 2017-10-26 日東電工株式会社 硬化性樹脂組成物、偏光フィルムおよびその製造方法、光学フィルムならびに画像表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004253643A (ja) * 2003-02-20 2004-09-09 Lintec Corp 半導体チップの製造方法
JP2010287884A (ja) * 2009-05-15 2010-12-24 Shin-Etsu Chemical Co Ltd 半導体チップの製造方法
JP5599177B2 (ja) * 2009-10-27 2014-10-01 リンテック株式会社 光学用粘着剤組成物、光学用粘着剤及び光学フィルム
WO2015046529A1 (ja) * 2013-09-30 2015-04-02 リンテック株式会社 樹脂膜形成用複合シート
CN107112219A (zh) 2014-10-29 2017-08-29 琳得科株式会社 保护膜形成膜及保护膜形成用复合片
JP6648906B2 (ja) * 2016-03-30 2020-02-14 リンテック株式会社 リワーク方法
CN108701640B (zh) * 2016-04-28 2022-12-20 琳得科株式会社 保护膜形成用膜以及保护膜形成用复合片

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1275686A4 (en) * 2000-03-15 2003-06-25 Kagoshima Prefecture METHOD FOR PRODUCING RECYCLED, EXPANDED POLYSTYRENE RESIN PARTICLES
CN1848564A (zh) * 2001-03-09 2006-10-18 精工爱普生株式会社 发光元件的制造方法、半导体激光器及其制造方法
WO2011147523A1 (en) * 2010-05-27 2011-12-01 Merck Patent Gmbh Formulation and method for preparation of organic electronic devices
CN104080875A (zh) * 2012-02-27 2014-10-01 日东电工株式会社 粘合带
CN103805106A (zh) * 2012-11-12 2014-05-21 琳得科株式会社 水分散型粘着剂组合物和再剥离性粘着片的制备方法及再剥离性粘着片
WO2017073627A1 (ja) * 2015-10-29 2017-05-04 リンテック株式会社 保護膜形成用フィルム及び保護膜形成用複合シート
JP2017194633A (ja) * 2016-04-22 2017-10-26 日東電工株式会社 硬化性樹脂組成物、偏光フィルムおよびその製造方法、光学フィルムならびに画像表示装置

Also Published As

Publication number Publication date
JP7132938B2 (ja) 2022-09-07
TWI798277B (zh) 2023-04-11
KR102564171B1 (ko) 2023-08-04
KR20200074090A (ko) 2020-06-24
TW201925288A (zh) 2019-07-01
CN111093986A (zh) 2020-05-01
WO2019082961A1 (ja) 2019-05-02
JPWO2019082961A1 (ja) 2020-11-19

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