CN111029468A - 一种钙钛矿薄膜的制备方法、设备及钙钛矿太阳能电池 - Google Patents
一种钙钛矿薄膜的制备方法、设备及钙钛矿太阳能电池 Download PDFInfo
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- CN111029468A CN111029468A CN201911248243.6A CN201911248243A CN111029468A CN 111029468 A CN111029468 A CN 111029468A CN 201911248243 A CN201911248243 A CN 201911248243A CN 111029468 A CN111029468 A CN 111029468A
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- thin film
- perovskite
- film
- inorganic component
- heating
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- 239000010409 thin film Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract description 78
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000005234 chemical deposition Methods 0.000 claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 claims abstract description 30
- 238000007639 printing Methods 0.000 claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 29
- 238000002791 soaking Methods 0.000 claims abstract description 23
- 230000001105 regulatory effect Effects 0.000 claims abstract description 14
- 230000001276 controlling effect Effects 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 230000036632 reaction speed Effects 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 51
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 25
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000460 chlorine Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 229910052794 bromium Inorganic materials 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 229910052740 iodine Inorganic materials 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 238000000427 thin-film deposition Methods 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 239000011630 iodine Substances 0.000 claims description 4
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052767 actinium Inorganic materials 0.000 description 1
- -1 amine salt Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911248243.6A CN111029468A (zh) | 2019-12-06 | 2019-12-06 | 一种钙钛矿薄膜的制备方法、设备及钙钛矿太阳能电池 |
Applications Claiming Priority (1)
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---|---|---|---|
CN201911248243.6A CN111029468A (zh) | 2019-12-06 | 2019-12-06 | 一种钙钛矿薄膜的制备方法、设备及钙钛矿太阳能电池 |
Publications (1)
Publication Number | Publication Date |
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CN111029468A true CN111029468A (zh) | 2020-04-17 |
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Family Applications (1)
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CN201911248243.6A Pending CN111029468A (zh) | 2019-12-06 | 2019-12-06 | 一种钙钛矿薄膜的制备方法、设备及钙钛矿太阳能电池 |
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CN (1) | CN111029468A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150287852A1 (en) * | 2014-04-03 | 2015-10-08 | The Hong Kong Polytechnic University | Crystal Control and Stability for High-Performance Perovskite Solar Cell |
US20160285021A1 (en) * | 2013-11-12 | 2016-09-29 | The Regents Of The University Of California | Sequential processing with vapor treatment of thin films of organic-inorganic perovskite materials |
CN109449295A (zh) * | 2018-10-30 | 2019-03-08 | 暨南大学 | 一种基于两步法印刷制备钙钛矿薄膜的方法 |
WO2019181940A1 (ja) * | 2018-03-23 | 2019-09-26 | 積水化学工業株式会社 | 太陽電池の製造方法、及び、太陽電池 |
-
2019
- 2019-12-06 CN CN201911248243.6A patent/CN111029468A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160285021A1 (en) * | 2013-11-12 | 2016-09-29 | The Regents Of The University Of California | Sequential processing with vapor treatment of thin films of organic-inorganic perovskite materials |
US20150287852A1 (en) * | 2014-04-03 | 2015-10-08 | The Hong Kong Polytechnic University | Crystal Control and Stability for High-Performance Perovskite Solar Cell |
WO2019181940A1 (ja) * | 2018-03-23 | 2019-09-26 | 積水化学工業株式会社 | 太陽電池の製造方法、及び、太陽電池 |
CN109449295A (zh) * | 2018-10-30 | 2019-03-08 | 暨南大学 | 一种基于两步法印刷制备钙钛矿薄膜的方法 |
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Effective date of registration: 20210420 Address after: 215500 Room 202, building 6-7, No. 88, Xianshi Road, Changshu high tech Development Zone, Suzhou City, Jiangsu Province Applicant after: JIANGSU JICUI MOLECULE ENGINEERING RESEARCH INSTITUTE Co.,Ltd. Address before: 215000 No. 18 Sheng Ping Road, Suzhou Industrial Park, Jiangsu, China Applicant before: SUZHOU VIGOR NANO TECHNOLOGY Co.,Ltd. Applicant before: JIANGSU JICUI MOLECULE ENGINEERING RESEARCH INSTITUTE Co.,Ltd. |
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