CN110942875A - 电荷装载仓容性陶瓷半导体装置及其制造方法 - Google Patents
电荷装载仓容性陶瓷半导体装置及其制造方法 Download PDFInfo
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- CN110942875A CN110942875A CN201911391586.8A CN201911391586A CN110942875A CN 110942875 A CN110942875 A CN 110942875A CN 201911391586 A CN201911391586 A CN 201911391586A CN 110942875 A CN110942875 A CN 110942875A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 27
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- 239000011521 glass Substances 0.000 claims abstract description 15
- 241000276425 Xiphophorus maculatus Species 0.000 claims abstract description 14
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- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 15
- 239000011787 zinc oxide Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 12
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- 238000002156 mixing Methods 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- CJQSUEBYPDGXEY-UHFFFAOYSA-N bismuth;oxosilver Chemical compound [Bi].[Ag]=O CJQSUEBYPDGXEY-UHFFFAOYSA-N 0.000 claims description 9
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- 239000000395 magnesium oxide Substances 0.000 claims description 4
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- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 4
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- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims description 4
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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Abstract
本发明提供了一种电荷装载仓容性陶瓷半导体装置及其制造方法。该装置由设定数量的形状相同的几何片状体的陶瓷半导体结构串联组成，串联过渡体为铝箔或锡箔，每一个几何片状体的陶瓷半导体结构串联的截面附着导电金属电极，侧面刷涂玻璃釉绝缘浆料。本发明通过材料配方技术和工艺，增加异性电荷聚合量，保护角度≥85°，大大的提高了保护半径。闪电电流耐受程度达到150‑400KA。此参数通过国家第三方测试机构的测试验证。在设定保护角度下接闪概率达到100％，减少大约82％的雷电流泄放大地，彻底消除82％的雷电流消除地面保护区域内微电子设备地电位高压反击破坏现象，保护人身安全和设备安全。
Description
技术领域
本发明涉及防雷技术领域，尤其涉及一种电荷装载仓容性陶瓷半导体装置及其制造方法。
背景技术
2012年9月1日中国人民解放军总装备部颁布了GJB7581-2012《机动通信系统雷电防护要求》，标准对适用范围规定了机动通信系统直击雷和雷电电磁脉冲的防护提出了严谨的技术要求，标准适用于机动通信系统直击雷和雷电电磁脉冲防护的设计、研制和使用等强制要求。标准4.6部分规定机动通信系统直击雷雷电防护为甲级，雷电电磁脉冲为乙级防护。地处多雷区、高雷区、强雷区的机动通信系统的防护为甲级和乙级，地处少雷区的机动通信系统的防护为乙级。标准规定了机动通信系统直击雷防护产品为：半导体直雷击防护装置(即：天幕直击雷防护装置)的最基本参数(如：保护角＞65°；接闪电流＞100KA等)。
现有的直击雷防护装置中的电荷装载仓容性陶瓷半导体装置的结构特点和缺陷：保护角度太小(保护半径小)，无法满足野战防雷的系统要求，在设定保护角度下接闪概率低(≥95％)，仍有5％的概率雷电入侵阵地设备；不具备限制闪电接闪电流的能力差；闪电电流耐受程度低，经常遭受雷击损坏；耐受较高的接闪电压破坏电压经常发生侧面击穿现象；无散基础热能力，宜发生热击穿效应；无内置高内阻抗消耗雷电流能量；单位体积容纳电荷量小；无法消除或基本消除地面保护区域内微电子设备地电位高压反击破坏现象；无法消除雷电电磁脉冲感应过电压对保护区域微电子设备的破坏现象
发明内容
本发明的实施例提供了一种电荷装载仓容性陶瓷半导体装置及其制造方法，以克服现有技术的问题。
为了实现上述目的，本发明采取了如下技术方案。
根据本发明的一个方面，提供了一种电荷装载仓容性陶瓷半导体装置，包括：
由设定数量的形状相同的几何片状体的陶瓷半导体结构串联组成，串联过渡体为铝箔或锡箔，每一个几何片状体的陶瓷半导体结构串联的截面附着导电金属电极，侧面刷涂玻璃釉绝缘浆料。
优选地，所述导电金属电极是氧化铋银浆料或者铝浆料经过300-900°烧结完成熔化附着；或者是，铝浆料经过粘合剂喷涂后烧结附着；或者是，金属铜通过高温溅射的方法附着；或者是，化学沉积法镀镍附着。
优选地，所述设定数量为5-30个。
优选地，每个几何片状体的陶瓷半导体结构的闪电导通电压在500-5000V之间。
优选地，所述电荷装载仓容性陶瓷半导体装置烧结前的组分材料包括：氧化锌、氧化铋、氧化锑、氧化钴、氧化锰、氧化铬、氧化硅、氢氧化铝、硝酸银、氧化铝、碳酸银、氧化硼、氧化锡、氧化铜和氧化镍；
装载电荷组分辅助材料包括：BaTiO3、SrTiO3、Li3ZrO3、Nb2O5、ZaB2O4、Bi2TiSiO7中的任意一种或者多种材料组合。
优选地，所述电荷装载仓容性陶瓷半导体装置烧结前的各个组分材料的摩尔配比的配方为：
配方一：ZnO(82-92％)；Bi2O3(4-7％)；Sb2O3(1-2％)；CO2O3(0.1-1.3％)；MnO2(0.2-3％)；Sn2O3(0.1-0.22％)；Cr2O3(0.5-2.5％)；SiO2(0.02-1.0％)；NiO(0.4-1.65％)；AL(OH)3(0.01-0.1％)；AGCO3(0.001-0.009％)；组分辅助材料(0.2-6.6％)；
配方二：ZnO(81-93％)；Bi2O3(2.3-5％)；Sb2O3(0.1-2％)；CO2O3(0.7-1.6％)；MnO2(0.1-0.9％)；Sn2O3(0.2-0.42％)；Cr2O3(0.1-0.5％)；SiO2(0.01-0.1.0％)；NiO(0.12-0.95％)；AL(OH)3(0.001-0.01％)；组分辅助材料(0.05-1.6％)。
根据本发明的另一个方面，提供了一种所述的电荷装载仓容性陶瓷半导体装置的制作方法，包括：
所述制作方法包括配料、球磨混合、喷雾造粒、压片成型、陶瓷烧结、电极附着和侧面绝缘处理工艺完成，具体制作过程包括：
1)配料：将氧化锌、氧化铋、氧化锑、氧化钴、氧化锰、氧化铬、氧化硅、氢氧化铝、硝酸银、氧化铝、碳酸银、氧化硼、氧化锡、氧化铜和氧化镍按照配方要求组配放入密闭的容器中；
2)球磨混合：将配好的料放入球磨机内，在球磨机中添加粘合剂和水后，进行球磨混料；
3)喷雾造粒：将球磨混合好的料放入喷雾造粒机内进行造粒，造好颗粒料；
4)压片成型：将所述颗粒料放在压力机的磨具里，压力机进行压制、保压和脱模处理，得到几何片状体的陶瓷半导体结构的毛坯体；
5)毛坯码片：将若干几何片状体的陶瓷半导体结构的毛坯体码放在专用耐火材料容器中；
6)高温排胶：将内装几何片状体的陶瓷半导体结构的毛坯体的耐火材料容器放入隧道窑炉中，实现第一次烧结排胶，烧结温度为：300-800℃，烧结时间2-18小时；
7)陶瓷烧结：
将高温烧结排胶后的耐火材料容器放入高温隧道窑炉中进行4-24小时的陶瓷烧结，烧结温度为：1000-1300℃；
8)电极附着：
将氧化铋银浆或者铝浆料经过300-900°烧结完成熔化附着于几何片状体的陶瓷半导体结构的截面，作为导电金属电极；
或者，
将铝浆料经过粘合剂喷涂后附着于几何片状体的陶瓷半导体结构的截面，作为导电金属电极；
或者，
高温铜溅射工艺涂附于几何片状体的陶瓷半导体结构的截面，作为导电金属电极；
或者，
化学沉积法镀镍附着。
9)侧面绝缘处理：
在几何片状体的陶瓷半导体结构的侧面刷涂玻璃釉绝缘浆料，再经过烘干后烧结处理，烧结温度范围：250-900℃。
优选地，所述几何片状体的陶瓷半导体结构未烧结前的毛坯体密度为：2.5-4.0g/cm3，毛坯体烧结后外观呈黑色状陶瓷片，毫米电压为：100-450V/mm范围，毛坯体烧结后经过工艺处理得到的几何片状体的陶瓷半导体结构的密度范围为：3-4.8g/cm3。
优选地，所述玻璃釉绝缘浆料的组成成分包括：氧化硅、氧化硼、氧化铝、氧化铅、氧化钛、氧化钙、氧化镁、氧化钡、氧化钾和氧化钠。
优选地，烧结后几何片状体的陶瓷半导体呈现黑色状态，通过原子发射光谱法、原子吸收光谱法、X射线光谱法、活性分析法、显微镜分析法、X射线衍射分析法、红外光谱分析法或者扫描电镜方法测试出烧结后几何片状体陶瓷半导体含有Zn、Bi、Sb、CO、Mn、Sn、Cr、Si、Ni、AL和AG中的一个或多个元素。
由上述本发明的实施例提供的技术方案可以看出，本发明通过材料配方技术和工艺，增加异性电荷聚合量，保护角度≥85°，大大的提高了保护半径。闪电电流耐受程度达到150-400KA。此参数通过国家第三方测试机构的测试验证。在设定保护角度下接闪概率达到100％，减少大约82％的雷电流泄放大地，彻底消除82％的雷电流消除地面保护区域内微电子设备地电位高压反击破坏现象，保护人身安全和设备安全。
本发明附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种烧结前毛坯的几何片状体的示意图；
图2为本发明实施例提供的一种烧结后容性陶瓷半导体的示意图；
图3为本发明实施例提供的一种烧结导电金属电极的示意图；
图4为本发明实施例提供的一种烧结玻璃釉绝缘浆料的示意图；
图5为本发明实施例提供的一种电荷装载仓容性陶瓷半导体装置示意图；
图6为本发明实施例提供的一种几何片状体的陶瓷半导体的示意图；
具体实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
本技术领域技术人员可以理解，除非特意声明，这里使用的单数形式“一”、“一个”、“所述”和“该”也可包括复数形式。应该进一步理解的是，本发明的说明书中使用的措辞“包括”是指存在所述特征、整数、步骤、操作、元件和/或组件，但是并不排除存在或添加一个或多个其他特征、整数、步骤、操作、元件、组件和/或它们的组。应该理解，当我们称元件被“连接”或“耦接”到另一元件时，它可以直接连接或耦接到其他元件，或者也可以存在中间元件。此外，这里使用的“连接”或“耦接”可以包括无线连接或耦接。这里使用的措辞“和/或”包括一个或更多个相关联的列出项的任一单元和全部组合。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)具有与本发明所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语应该被理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样定义，不会用理想化或过于正式的含义来解释。
为便于对本发明实施例的理解，下面将结合附图以几个具体实施例为例做进一步的解释说明，且各个实施例并不构成对本发明实施例的限定。
本发明的目的就是解决现有结构特点和缺陷，其中包括：
1.保护角度太小，保护半径小，无法满足机动式野战防雷的系统要求，
2.最大闪电电流耐受程度达到＜65KA。
3.耐受较高的接闪电压破坏电压经常发生侧面击穿现象；
4.非线性系数太高，不具备消耗雷电流功能
5.无法减少剩余雷电流泄放大地，无法消除地面保护区域内微电子设备地电位高压反击破坏现象。
6.无法消除雷电流入地引起的雷电电磁脉冲感应过电压在地面保护区域内微电子设备破坏现象。
7.上述因素可能导致的保护人身安全和设备安全隐患。
图5为本发明实施例提供的一种电荷装载仓容性陶瓷半导体装置示意图，图6为一种几何片状体的陶瓷半导体的示意图。本发明实施例提供的一种电荷装载仓容性陶瓷半导体装置由设定数量个形状相同的几何片状体的陶瓷半导体结构串联组成，串联过渡体为铝箔或锡箔，减少机械压接的接触电阻，上述设定数量可以为5-30个。
图3为本发明实施例提供的一种烧结导电金属电极的示意图。每个几何片状体的陶瓷半导体结构串联的截面附着导电金属电极，该导电金属电极可以是氧化铋银浆料或者铝浆料经过300-900°烧结完成熔化附着；或者是，铝浆料经过粘合剂喷涂后烧结附着；或者是，金属铜通过高温溅射的方法附着；或者是，化学沉积法镀镍附着。
图4为本发明实施例提供的一种烧结玻璃釉绝缘浆料的示意图。每个几何片状体的陶瓷半导体结构的侧面刷有玻璃釉绝缘浆料，该玻璃釉绝缘浆料经过了300-600°高温烧结。上述玻璃釉绝缘浆料的主要组分材料包括：氧化硅、氧化硼、氧化铝、氧化铅、氧化钛、氧化钙、氧化镁、氧化钡、氧化钾、氧化钠等，烧结温度范围：250-900℃。
每一个几何片状体的陶瓷半导体结构的闪电导通电压在500-5000V之间
上述电荷装载仓容性陶瓷半导体装置烧结前的主要组分材料如下：
1)基础组分材料：
氧化锌、氧化铋、氧化锑、氧化钴、氧化锰、氧化铬、氧化硅、氢氧化铝、硝酸银、氧化铝、碳酸银、氧化硼、氧化锡、氧化铜和氧化镍。
装载电荷组分辅助材料包括：BaTiO3、SrTiO3、Li3ZrO3、Nb2O5、ZaB2O4、Bi2TiSiO7中的任意一种或者多种材料组合。
2)电荷装载仓容性陶瓷半导体装置烧结前的各个组分材料的摩尔配比的典型配方为：
配方一：ZnO(82-92％)；Bi2O3(4-7％)；Sb2O3(1-2％)；CO2O3(0.1-1.3％)；MnO2(0.2-3％)；Sn2O3(0.1-0.22％)；Cr2O3(0.5-2.5％)；SiO2(0.02-1.0％)；NiO(0.4-1.65％)；AL(OH)3(0.01-0.1％)；AGCO3(0.001-0.009％)；
配方二：ZnO(81-93％)；Bi2O3(2.3-5％)；Sb2O3(0.1-2％)；CO2O3(0.7-1.6％)；MnO2(0.1-0.9％)；Sn2O3(0.2-0.42％)；Cr2O3(0.1-0.5％)；SiO2(0.01-0.1.0％)；NiO(0.12-0.95％)；AL(OH)3(0.001-0.01％)；
各个组分材料合成的基本原理为：
以10-20纳米的ZnO为基础晶粒主基材，以三氧化二铋(Bi2O3)、三氧化二锑(Sb2O3)、三氧化二钴(CO2O3)、二氧化锰(MnO2)、三氧化二铬(Cr2O3)、二氧化硅(SiO2)、氧化镍(NiO)等为基本晶界材料，以10-20纳米的ZnO颗粒下的富Bi2O3晶界层，在低熔点温区在晶粒与晶界界面，构成了焦绿石(Zn2Bi3Sb3O14)与尖晶石相(Zn7Sb2O12)，高熔点区形成富铋液相Bi2O3(Sb,Zn),渗透到氧化锑和氧化锌传递氧离子，Sb2O3以尖晶石来减少Bi2O3的高温挥发，完成了闪电电流的非线性导通和稳定性。CO2O3、Cr2O3加入高温反应形成氧空位聚集晶界全面提高了晶界势垒，SiO2基体引入玻璃相，抑制晶粒生长，有效地提高了闪电接闪电压。
上述电荷装载仓容性陶瓷半导体装置的制作通过配料、球磨混合、喷雾造粒、压片成型、陶瓷烧结、电极附着、侧面绝缘处理等工艺完成，具体制作过程包括：
1)配料：将氧化铋、氧化锑、氧化钴、氧化锰、氧化铬、氧化硅、氢氧化铝、硝酸银、氧化铝、碳酸银、氧化硼、氧化锡、氧化铜、氧化镍等按照配方要求组配放入密闭的容器中。
2)球磨混合：将配好的料放入球磨机内，在球磨机中添加粘合剂和水后，进行球磨混料。
3)喷雾造粒：将球磨混合好的料放入喷雾造粒机内进行造粒，造好犹如洗衣粉状的颗粒料。
4)压片成型：将上述颗粒料放在压力机的磨具里，然后压力机开始进行压制、保压和脱模。一只几何片状体的陶瓷半导体结构的毛坯就诞生了，该毛坯可以是圆形、矩形片等任意几何形状(具备设定厚度)体，压力机模具决定成型形状。上述几何片状体的陶瓷半导体结构未烧结前的成型好的毛坯体的密度为：2.5-4.0g/cm3。图1为本发明实施例提供的一种烧结前毛坯的几何片状体的示意图。
5)毛坯码片：将若干几何片状体的陶瓷半导体结构的毛坯体码放在专用耐火材料容器中，等待烧结。
6)高温排胶：将内装几何片状体的陶瓷半导体结构的毛坯体的耐火材料容器放入隧道窑炉中，实现第一次烧结排胶，烧结温度为：300-800℃，第一次烧结时间是2-18小时。
7)陶瓷烧结：
将高温烧结排胶后的上述耐火材料容器放入高温隧道窑炉中进行4-24小时的陶瓷烧结，烧结温度为：1000-1300℃。毛坯体烧结后经过工艺处理，外观呈黑色状陶瓷片，密度范围为：3-4.8g/cm3，毫米电压(即：在烧结后毛坯体两端测试DC1mA下在每毫米的导通电压)为：100-450V/mm范围。图2为本发明实施例提供的一种烧结后容性陶瓷半导体的示意图。
通过原子发射光谱法、原子吸收光谱法、X射线光谱法、活性分析法、显微镜分析法、X射线衍射分析法、红外光谱分析法或者扫描电镜方法测试出烧结后几何片状体陶瓷半导体含有Zn、Bi、Sb、CO、Mn、Sn、Cr、Si、Ni、AL和AG中的一个或多个元素。
8)电极附着：
将氧化铋银浆或者铝浆料涂附于陶瓷烧结后的几何片状体的陶瓷半导体结构的截面，放入隧道窑路中进行电极烧结，烧结温度300-900℃，烧结时间1-6小时(即：附着导电金属电极工艺)。还可以用高温铜溅射的工艺完成上述氧化铋银浆或者铝浆料的涂附工作。
9)侧面绝缘处理：
几何片状体的陶瓷半导体结构的侧面刷涂玻璃釉绝缘浆料，玻璃釉绝缘(但不仅限于)包括：硅-铅类、硅-钛类、硅-铅-钛类等，通常主基材：氧化硅、氧化硼、氧化铝、氧化铅、氧化钛、氧化钙、氧化镁、氧化钡、氧化钾、氧化钠等，球磨混合施加粘合剂后，刷涂于烧结后的几何片状体的陶瓷半导体结构的侧面，再经过烘干后烧结处理，烧结温度范围：250-900℃。
上述电荷装载仓容性陶瓷半导体装置可以应用于直接雷击接闪防护装置中。闪电电流引起过热效应时，几何片状体的陶瓷半导体结构的表面超过200-300°，则直接呈现熔融式电气连接效应。
综上所述，本发明实施例提供的电荷装载仓容性陶瓷半导体装置所具有的有益效果包括：
1：通过材料配方技术和工艺，增加异性电荷聚合量，保护角度≥85°，大大的提高了保护半径，例如：在10米升降系统安装本技术产品，作战半径高达114米，满足机动式野战防雷的系统要求，此参数通过国家第三方北京雷电防护装置测试中心的测试。
2：通过材料配方技术和工艺，闪电电流耐受程度达到150-400KA。此参数通过国家第三方测试机构的测试验证。
3：通过材料配方技术和工艺，在设定保护角度下接闪概率达到100％，满足了机动式野战防雷系统接闪概率全覆盖要求，此参数通过国家第三方北京雷电防护装置测试中心的测试。
4：通过材料配方技术和工艺，増加单位体积容纳电荷量，能够满足耐受较高的接闪电压破坏电压不发生或者少发生侧面击穿现象；通过系统架构工艺增加高分子高绝缘特种硅胶技术，提高基础热能力，不发生或少发生热击穿现象；连续5次150KA模拟雷击后，未发生热击穿现象，表面温升小于60K，此参数通过国家第三方测试机构的测试验证。
5：通过材料配方技术和工艺，施加内置高内阻抗消耗雷电流能量于内体；减少大约82％的雷电流泄放大地，彻底消除82％的雷电流消除地面保护区域内微电子设备地电位高压反击破坏现象，保护人身安全和设备安全。例如；100KA下限制消除82KA雷电能量，150KA下限制消除120KA雷电能量。此参数通过国家第三方测试机构的测试验证。
6：通过材料配方技术和工艺，施加内置高内阻抗消耗雷电流能量于内体；减少大约80％的雷电流泄放大地，彻底消除82％的雷电流入地引起的雷电电磁脉冲感应过电压在地面保护区域内微电子设备破坏现象，保护设备安全。此参数通过国家第三方测试机构的测试验证。
7：本技术下支撑的样机通过军方的试用验证工作，并出具了试用证明。
本领域普通技术人员可以理解：附图只是一个实施例的示意图，附图中的模块或流程并不一定是实施本发明所必须的。
本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于装置或系统实施例而言，由于其基本相似于方法实施例，所以描述得比较简单，相关之处参见方法实施例的部分说明即可。以上所描述的装置及系统实施例仅仅是示意性的，其中所述作为分离部件说明的单元可以是或者也可以不是物理上分开的，作为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部模块来实现本实施例方案的目的。本领域普通技术人员在不付出创造性劳动的情况下，即可以理解并实施。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。
Claims (10)
1.一种电荷装载仓容性陶瓷半导体装置，其特征在于，包括：
由设定数量的形状相同的几何片状体的陶瓷半导体结构串联组成，串联过渡体为铝箔或锡箔，每一个几何片状体的陶瓷半导体结构串联的截面附着导电金属电极，侧面刷涂玻璃釉绝缘浆料。
2.根据权利要求1所述的装置，其特征在于，所述导电金属电极是氧化铋银浆料或者铝浆料经过300-900°烧结完成熔化附着；或者是，铝浆料经过粘合剂喷涂后烧结附着；或者是，金属铜通过高温溅射的方法附着；或者是，化学沉积法镀镍附着。
3.根据权利要求2所述的装置，其特征在于，所述设定数量为5-30个。
4.根据权利要求1所述的装置，其特征在于，每个几何片状体的陶瓷半导体结构的闪电导通电压在500-5000V之间。
5.根据权利要求1至4任一项所述的装置，其特征在于，所述电荷装载仓容性陶瓷半导体装置烧结前的组分材料包括：氧化锌、氧化铋、氧化锑、氧化钴、氧化锰、氧化铬、氧化硅、氢氧化铝、硝酸银、氧化铝、碳酸银、氧化硼、氧化锡、氧化铜和氧化镍；
装载电荷组分辅助材料包括：BaTiO3、SrTiO3、Li3ZrO3、Nb2O5、ZaB2O4、Bi2TiSiO7中的任意一种或者多种材料组合。
6.根据权利要求5所述的装置，其特征在于，所述电荷装载仓容性陶瓷半导体装置烧结前的各个组分材料的摩尔配比的配方为：
配方一：ZnO(82-92％)；Bi2O3(4-7％)；Sb2O3(1-2％)；CO2O3(0.1-1.3％)；MnO2(0.2-3％)；Sn2O3(0.1-0.22％)；Cr2O3(0.5-2.5％)；SiO2(0.02-1.0％)；NiO(0.4-1.65％)；AL(OH)3(0.01-0.1％)；AGCO3(0.001-0.009％)；组分辅助材料(0.2-6.6％)；
配方二：ZnO(81-93％)；Bi2O3(2.3-5％)；Sb2O3(0.1-2％)；CO2O3(0.7-1.6％)；MnO2(0.1-0.9％)；Sn2O3(0.2-0.42％)；Cr2O3(0.1-0.5％)；SiO2(0.01-0.1.0％)；NiO(0.12-0.95％)；AL(OH)3(0.001-0.01％)；组分辅助材料(0.05-1.6％)。
7.一种权利要求1至6任一项所述的电荷装载仓容性陶瓷半导体装置的制作方法，其特征在于，包括：
所述制作方法包括配料、球磨混合、喷雾造粒、压片成型、陶瓷烧结、电极附着和侧面绝缘处理工艺完成，具体制作过程包括：
1)配料：将氧化锌、氧化铋、氧化锑、氧化钴、氧化锰、氧化铬、氧化硅、氢氧化铝、硝酸银、氧化铝、碳酸银、氧化硼、氧化锡、氧化铜和氧化镍按照配方要求组配放入密闭的容器中；
2)球磨混合：将配好的料放入球磨机内，在球磨机中添加粘合剂和水后，进行球磨混料；
3)喷雾造粒：将球磨混合好的料放入喷雾造粒机内进行造粒，造好颗粒料；
4)压片成型：将所述颗粒料放在压力机的磨具里，压力机进行压制、保压和脱模处理，得到几何片状体的陶瓷半导体结构的毛坯体；
5)毛坯码片：将若干几何片状体的陶瓷半导体结构的毛坯体码放在专用耐火材料容器中；
6)高温排胶：将内装几何片状体的陶瓷半导体结构的毛坯体的耐火材料容器放入隧道窑炉中，实现第一次烧结排胶，烧结温度为：300-800℃，烧结时间2-18小时；
7)陶瓷烧结：
将高温烧结排胶后的耐火材料容器放入高温隧道窑炉中进行4-24小时的陶瓷烧结，烧结温度为：1000-1300℃；
8)电极附着：
将氧化铋银浆或者铝浆料经过300-900°烧结完成熔化附着于几何片状体的陶瓷半导体结构的截面，作为导电金属电极；
或者，
将铝浆料经过粘合剂喷涂后附着于几何片状体的陶瓷半导体结构的截面，作为导电金属电极；
或者，
高温铜溅射工艺涂附于几何片状体的陶瓷半导体结构的截面，作为导电金属电极；
或者，
化学沉积法镀镍附着。
9)侧面绝缘处理：
在几何片状体的陶瓷半导体结构的侧面刷涂玻璃釉绝缘浆料，再经过烘干后烧结处理，烧结温度范围：250-900℃。
8.根据权利要求7所述的方法，其特征在于，所述几何片状体的陶瓷半导体结构未烧结前的毛坯体密度为：2.5-4.0g/cm3，毛坯体烧结后外观呈黑色状陶瓷片，毫米电压为：100-450V/mm范围，毛坯体烧结后经过工艺处理得到的几何片状体的陶瓷半导体结构的密度范围为：3-4.8g/cm3。
9.根据权利要求7所述的方法，其特征在于，所述玻璃釉绝缘浆料的组成成分包括：氧化硅、氧化硼、氧化铝、氧化铅、氧化钛、氧化钙、氧化镁、氧化钡、氧化钾和氧化钠。
10.根据权利要求7所述的方法，其特征在于，烧结后几何片状体的陶瓷半导体呈现黑色状态，通过原子发射光谱法、原子吸收光谱法、X射线光谱法、活性分析法、显微镜分析法、X射线衍射分析法、红外光谱分析法或者扫描电镜方法测试出烧结后几何片状体陶瓷半导体含有Zn、Bi、Sb、CO、Mn、Sn、Cr、Si、Ni、AL和AG中的一个或多个元素。
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