CN110938805A - 静电吸盘系统、成膜装置、吸附及分离方法、成膜方法及电子器件的制造方法 - Google Patents

静电吸盘系统、成膜装置、吸附及分离方法、成膜方法及电子器件的制造方法 Download PDF

Info

Publication number
CN110938805A
CN110938805A CN201910889626.5A CN201910889626A CN110938805A CN 110938805 A CN110938805 A CN 110938805A CN 201910889626 A CN201910889626 A CN 201910889626A CN 110938805 A CN110938805 A CN 110938805A
Authority
CN
China
Prior art keywords
voltage
electrostatic chuck
adherend
substrate
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910889626.5A
Other languages
English (en)
Chinese (zh)
Inventor
柏仓一史
石井博
细谷映之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
Original Assignee
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Publication of CN110938805A publication Critical patent/CN110938805A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
CN201910889626.5A 2018-09-21 2019-09-20 静电吸盘系统、成膜装置、吸附及分离方法、成膜方法及电子器件的制造方法 Pending CN110938805A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0113763 2018-09-21
KR1020180113763A KR102411995B1 (ko) 2018-09-21 2018-09-21 정전척 시스템, 성막장치, 흡착 및 분리방법, 성막방법 및 전자 디바이스의 제조방법

Publications (1)

Publication Number Publication Date
CN110938805A true CN110938805A (zh) 2020-03-31

Family

ID=69906201

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910889626.5A Pending CN110938805A (zh) 2018-09-21 2019-09-20 静电吸盘系统、成膜装置、吸附及分离方法、成膜方法及电子器件的制造方法

Country Status (3)

Country Link
JP (1) JP7162845B2 (https=)
KR (1) KR102411995B1 (https=)
CN (1) CN110938805A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959587A (zh) * 2021-02-26 2022-08-30 佳能特机株式会社 成膜装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法
CN105579612A (zh) * 2013-09-20 2016-05-11 应用材料公司 具有一体式静电夹盘的基板载体
CN106783714A (zh) * 2015-11-25 2017-05-31 三星显示有限公司 沉积装置及沉积方法
CN108517505A (zh) * 2017-05-22 2018-09-11 佳能特机株式会社 基板载置装置、成膜装置、基板载置方法、成膜方法和电子器件的制造方法
CN110578118A (zh) * 2018-06-11 2019-12-17 佳能特机株式会社 静电吸盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06343278A (ja) * 1993-05-31 1994-12-13 Ryoden Semiconductor Syst Eng Kk 静電吸着方法
JP2001085504A (ja) 1999-09-10 2001-03-30 Toto Ltd 静電吸着力制御装置
JP2004152704A (ja) 2002-11-01 2004-05-27 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセンス素子の製造方法
KR101289345B1 (ko) 2005-07-19 2013-07-29 주성엔지니어링(주) 섀도우 마스크와 이를 이용한 정렬장치
JP4677397B2 (ja) 2006-12-11 2011-04-27 株式会社巴川製紙所 静電吸着方法
KR101000094B1 (ko) * 2007-08-08 2010-12-09 엘아이지에이디피 주식회사 기판 증착장치
JP4620766B2 (ja) * 2008-07-31 2011-01-26 東京エレクトロン株式会社 はがし装置及びはがし方法
WO2015171207A1 (en) 2014-05-09 2015-11-12 Applied Materials, Inc. Substrate carrier system and method for using the same
KR101961186B1 (ko) * 2017-09-04 2019-03-21 주식회사 선익시스템 웨이퍼 증착장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法
CN105579612A (zh) * 2013-09-20 2016-05-11 应用材料公司 具有一体式静电夹盘的基板载体
CN106783714A (zh) * 2015-11-25 2017-05-31 三星显示有限公司 沉积装置及沉积方法
CN108517505A (zh) * 2017-05-22 2018-09-11 佳能特机株式会社 基板载置装置、成膜装置、基板载置方法、成膜方法和电子器件的制造方法
CN110578118A (zh) * 2018-06-11 2019-12-17 佳能特机株式会社 静电吸盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959587A (zh) * 2021-02-26 2022-08-30 佳能特机株式会社 成膜装置

Also Published As

Publication number Publication date
KR20200034240A (ko) 2020-03-31
JP7162845B2 (ja) 2022-10-31
JP2020050951A (ja) 2020-04-02
KR102411995B1 (ko) 2022-06-21

Similar Documents

Publication Publication Date Title
JP7278541B2 (ja) 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
CN111118466A (zh) 对准系统、成膜装置、对准方法、成膜方法以及电子器件的制造方法
CN111128836B (zh) 吸附系统及方法、成膜装置及方法、电子器件的制造方法
KR102505832B1 (ko) 흡착장치, 위치 조정 방법, 및 성막 방법
CN110783248B (zh) 静电吸盘系统、成膜装置、吸附及成膜方法、电子器件的制造方法
CN112779503A (zh) 成膜装置及成膜装置的控制方法
JP2020072273A (ja) 吸着及びアライメント方法、吸着システム、成膜方法、成膜装置及び電子デバイスの製造方法
CN111118447B (zh) 贴紧度确认装置及方法、成膜装置及方法、电子器件的制造方法
CN110943026A (zh) 静电吸盘系统、成膜装置、被吸附体分离方法、成膜方法及电子器件的制造方法
CN111118444B (zh) 静电卡盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法
CN110938796B (zh) 静电吸盘系统、成膜装置、被吸附体分离方法、成膜方法及电子设备的制造方法
CN110938805A (zh) 静电吸盘系统、成膜装置、吸附及分离方法、成膜方法及电子器件的制造方法
CN110938806A (zh) 静电吸盘系统、成膜装置、被吸附体分离方法、成膜方法及电子器件的制造方法
CN110938797A (zh) 静电吸盘系统、成膜装置、被吸附体分离方法、成膜方法及电子器件的制造方法
CN110777332B (zh) 静电吸盘系统、成膜装置和方法、吸附方法及电子器件的制造方法
KR102430370B1 (ko) 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
CN112458437A (zh) 吸附装置、成膜装置、吸附方法、成膜方法及电子器件的制造方法
CN110943024B (zh) 静电吸盘系统、成膜装置和方法、吸附方法
CN113005403B (zh) 成膜装置、使用其的成膜方法及电子器件的制造方法
CN113005398B (zh) 成膜装置、成膜方法及电子器件的制造方法
CN113088870A (zh) 成膜装置、成膜方法及电子器件的制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination