CN110564329A - Antistatic die attach film, method of manufacturing the same, and wafer dicing process using the same - Google Patents

Antistatic die attach film, method of manufacturing the same, and wafer dicing process using the same Download PDF

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Publication number
CN110564329A
CN110564329A CN201910488442.8A CN201910488442A CN110564329A CN 110564329 A CN110564329 A CN 110564329A CN 201910488442 A CN201910488442 A CN 201910488442A CN 110564329 A CN110564329 A CN 110564329A
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China
Prior art keywords
adhesive layer
layer
film
antistatic
adhesive
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Granted
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CN201910488442.8A
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Chinese (zh)
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CN110564329B (en
Inventor
金荣建
崔裁源
河宪昱
具滋敏
申犯析
赵炯睃
朴成默
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Linos Top Materials Co Ltd
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Linos Top Materials Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/066—Copolymers with monomers not covered by C09J133/06 containing -OH groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/068—Copolymers with monomers not covered by C09J133/06 containing glycidyl groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

The present invention relates to an antistatic die attach film, and more particularly, to a die attach film which prevents device breakdown due to charge charging in a semiconductor package to reduce a defect rate due to low peeling static voltage, and easily controls adhesion and debonding under specific conditions to improve efficiency of wafer dicing and semiconductor chip pickup processes.

Description

Antistatic die attach film, method of manufacturing the same, and wafer dicing process using the same
Technical Field
The present invention relates to a Die Attach Film (DAF) used in a wafer dicing process such as Dicing Before Grinding (DBG) or dicing before stealth grinding (SDBG), that is, a DAF having an antistatic function and easily adhering and debonding under specific conditions, and a wafer dicing process using the DAF.
Background
In general, the wafer dicing step is a step between a pre-step called a wafer fabrication process and a post-step called an assembly (assembly) step in a semiconductor fabrication process, and is also a step of dividing a wafer formed with a plurality of semiconductor chips or dies into individual dies by dicing.
In a general wafer dicing process, dicing is performed along scribe lines (scribe lines) between dies formed on a chip using a blade (blade) rotating at a high speed or using a laser having a specific energy.
The existing method using a blade to cut a thin (thin) wafer having a thickness of 200 μm or less into individual dies results in excessive edge cracking, chipping, and cross-sectional cracking, thereby reducing the breaking strength of the die, i.e., the force with which the die is subjected to breaking. As a result, the die is easily broken even by a small external impact. The wafer edge cracks and the like due to the use of the blade are caused by vibration, frictional heat, and the like due to mechanical contact between the wafer and the blade.
In order to improve the fracture strength of the die, damage to the cut surface (damage) must be minimized. For this reason, a method of reducing the thickness of the blade or reducing the cutting speed has been proposed. However, reduction in blade thickness is limited, and reduction in cutting speed leads to reduction in mass productivity.
On the other hand, as another method, a method of relatively reducing impact on a wafer by blade cutting before back grinding (DBG), that is, before back grinding of the wafer, has been proposed. However, this method is difficult to apply a Die Attach Film (DAF) process that is generally used at present, and it is difficult to maintain a correct position of the die in the ring mount (ringmount) after the back grinding. Among them, the ring mount is a device that generally supports a wafer that has been diced, and is a semiconductor device composed of a stainless steel (stainless steel) annular ring whose inner lower surface is blocked by a tape.
Pre-grind Stealth Dicing (SDBG), one of wafer dicing methods using lasers, is receiving attention due to its relatively high mass productivity and low damage to the dicing surface. The SDBG wafer cutting method has different cutting principles depending on the type of light source.
However, in the case of DAF packaging (packaging) in the DBG or SDBG wafer dicing process, when a film is attached, charges are moved in the DAF film due to contact with a wafer or a semiconductor chip to form an electrical double layer (+ layer and-layer), and peeling static electricity is generated due to peeling of DAF when a semiconductor chip is picked up (pick up), and as a result, electrostatic current discharge occurs in adjacent semiconductor chips when the semiconductor chips are stacked (stack), causing a device breakdown problem.
(Prior art document)
(patent document)
Korean laid-open patent No. 10-2013-0037638 (Kokai: 2013.04.16)
Korean laid-open patent No. 10-2017-0088285 (published: 2017.08.01)
Disclosure of Invention
Technical problem
an object of the present invention is to provide a novel Die Attach Film (DAF) capable of preventing device breakdown of semiconductor chips due to electrostatic current discharge at the time of semiconductor stacking (stack) by using a DAF film having an antistatic function as a DAF film used in a wafer dicing process such as DBG or SDBG.
Means for solving the problems
In order to achieve the above object, an antistatic Die Attach Film (DAF) of the present invention includes: a dicing film including an antistatic layer, a Polyolefin film (PO film) layer, and a Pressure Sensitive Adhesive (PSA) layer; and an adhesive layer laminated on the upper portion of the pressure-sensitive adhesive layer of the dicing film.
As a preferred embodiment of the present invention, in the dicing film, an antistatic layer, a polyolefin film layer, and a pressure-sensitive adhesive layer may be sequentially stacked, or a polyolefin film layer, an antistatic layer, and a pressure-sensitive adhesive layer may be sequentially stacked.
As a preferred embodiment of the present invention, the antistatic layer may include one or more selected from Al and Al2O3At least one of Indium Tin Oxide (ITO), nickel (Ni) and silver (Ag).
As a preferred embodiment of the present invention, the adhesive layer may include an adhesive in a B-staged state or an adhesive film in a B-staged state.
As a preferred embodiment of the present invention, the above adhesive in a B-staged state may include 60 to 75 weight percent of a thermoplastic resin having a number average molecular weight of 600,000 to 1,000,000, 10 to 25 weight percent of the above epoxy resin, 2 to 10 weight percent of a curing agent, 4 to 15 weight percent of an inorganic filler, 0.1 to 2 weight percent of a curing accelerator, and 0.1 to 4 weight percent of a coupling agent.
As a preferred embodiment of the present invention, in the antistatic die attach film, when the thickness of the above antistatic layer is 5 to 30nm, the peeling static voltage (ESD) of the adhesive layer may be 0.1kV to 0.8 kV.
As a preferred embodiment of the present invention, the surface resistance of the antistatic layer may be 1 x 102To 1 x 1012ohm/sq。
As a preferred embodiment of the present invention, the storage elastic modulus of the adhesive layer may satisfy the following equation 6.
[ equation 6]
18 or less of the storage elasticity value (Mpa) at 25 ℃ before curing of the adhesive layer/storage elasticity value (Mpa) at 130 ℃ or less of the storage elasticity value (Mpa) before curing of the adhesive layer
In equation 6, the above storage elasticity value is obtained by measuring a sample having a width of 20mm and a length of 5mm under the conditions of a temperature rise rate of 10 ℃/minute, a measurement temperature of-30 ℃ to 300 ℃ and a measurement frequency of 10Hz using a dynamic thermomechanical analyzer, which is available from Perkin Elmer under the product name of Diamond DMA.
As a preferred embodiment of the present invention, the storage elastic modulus value of UV at 260 ℃ after curing of the above adhesive layer may be 3MPa or more.
As a preferred embodiment of the present invention, when the thickness of the adhesive layer is 20 μm, the shear adhesive strength at 260 ℃ after curing of the adhesive layer may be 4 to 10 MPa.
As a preferred embodiment of the present invention, the adhesive force at 22 ℃ between the pressure-sensitive adhesive layer of the above-mentioned dicing film and the above-mentioned adhesive layer before ultraviolet curing may be 80 to 300N/m, and the adhesive force at 22 ℃ between the pressure-sensitive adhesive layer of the above-mentioned dicing film and the above-mentioned adhesive layer after ultraviolet curing may be 20N/m or less.
as a preferred embodiment of the present invention, the adhesive force between the above pressure-sensitive adhesive layer and the above adhesive layer becomes the maximum adhesive force at a temperature of-15 ℃ to-7 ℃, and the above maximum adhesive force may be 300 to 700N/m.
As a preferred embodiment of the present invention, the adhesive force between the pressure-sensitive adhesive layer of the above-described dicing film and the above-described adhesive layer may be set such that the adhesive force before UV curing satisfies the following equations 1 to 5 and the adhesive force at-13 ℃ to-15 ℃ is higher than the adhesive force at-7 ℃ to-10 ℃.
[ equation 1]
The adhesive force is less than or equal to 470N/m at the temperature of less than or equal to 150N/m and less than or equal to 0 DEG C
[ equation 2]
An adhesive force of not more than 520N/m at a temperature of not less than 220N/m and not more than-3 ℃ and not more than-5 DEG C
[ equation 3]
the adhesive force is less than or equal to 540N/m at the temperature of between 300N/m and 7 ℃ below zero and 10 ℃ below zero
[ equation 4]
An adhesive force of not more than 700N/m at a temperature of not more than 305N/m and not more than-13 ℃ and not more than-15 DEG C
[ equation 5]
The adhesive force is less than or equal to 500N/m at the temperature of between 18 ℃ below zero and 20 ℃ below zero
As a preferred embodiment of the present invention, the above pressure-sensitive adhesive layer may be formed of a pressure-sensitive adhesive resin including 90 to 97 weight percent of an acrylic copolymer resin, 2 to 8 weight percent of a thermal curing agent, and 0.1 to 2 weight percent of a photoinitiator.
as a preferred embodiment of the present invention, the above-mentioned acrylic copolymer resin may include a copolymer obtained by copolymerizing 10 to 40 parts by weight of 2-hydroxyethyl acrylate and 10 to 45 parts by weight of 2-methacryloyloxyethyl isocyanate with respect to 100 parts by weight of 2-ethylhexyl acrylate.
In a preferred embodiment of the present invention, the copolymer may be a copolymer obtained by further copolymerizing at least one selected from the group consisting of ethylhexyl methacrylate and hydroxyethyl methacrylate.
As a preferred embodiment of the present invention, in the above-mentioned copolymerization, the content of ethylhexyl methacrylate may be 5 to 135 parts by weight with respect to 100 parts by weight of 2-ethylhexyl acrylate.
As a preferred embodiment of the present invention, the content of the above hydroxyethyl methacrylate may be 3 to 30 parts by weight with respect to 100 parts by weight of 2-ethylhexyl acrylate at the time of the above copolymerization.
As a preferred embodiment of the present invention, the adhesive force between the above adhesive layer and the above pressure-sensitive adhesive layer becomes the maximum adhesive force at a temperature of-20 ℃ to-7 ℃, and the above maximum adhesive force may be 300 to 700N/m.
As a preferred embodiment of the present invention, in the die attach film of the present invention, the average thickness of the adhesive layer may be 5 μm to 60 μm, and the average thickness of the above-described dicing film layer may be 60 μm to 150 μm.
As a preferred embodiment of the present invention, the average thickness of the pressure-sensitive adhesive layer may be 5 to 30 μm, and the average thickness of the antistatic layer may be 1 to 30 nm.
As a preferred embodiment of the present invention, when the die attach film of the present invention is viewed from the upper direction of the adhesive layer, the above adhesive layer exists inside the pressure-sensitive adhesive layer, and the area of the adhesive layer may be smaller than the area of the pressure-sensitive adhesive layer.
In a preferred embodiment of the present invention, the die attach film of the present invention may further include a protective film layer (or a release film layer) laminated on the adhesive layer.
Another object of the present invention relates to a method for manufacturing a die attach film as described above, which can be manufactured by performing a process including the steps of: step 1, preparing a cutting film comprising an antistatic layer, a polyolefin film layer and a pressure-sensitive adhesive layer; and a step 2 of integrating the adhesive film by laminating the adhesive film on the upper portion of the pressure-sensitive adhesive layer of the dicing film or casting an adhesive on the upper portion of the pressure-sensitive adhesive layer of the dicing film and drying to form the adhesive layer.
As a preferred embodiment of the present invention, in the dicing film, an antistatic layer, a polyolefin film layer, and a pressure-sensitive adhesive layer may be sequentially stacked, or a polyolefin film layer, an antistatic layer, and a pressure-sensitive adhesive layer may be sequentially stacked.
As a preferred embodiment of the present invention, the adhesive film or layer may be in a B-staged state.
It is still another object of the present invention to provide a wafer dicing process using the die attach film described above, wherein the wafer dicing process is a pre-polishing Dicing (DBG) or a pre-polishing Stealth Dicing (SDBG) wafer dicing process.
ADVANTAGEOUS EFFECTS OF INVENTION
The die attach film of the present invention has the effects that the peel static voltage is low, and thus, device breakdown due to charge charging at the time of semiconductor packaging can be prevented, thereby greatly reducing the defect rate, high adhesive force is maintained between the in-film adhesive layer and the pressure-sensitive adhesive layer before UV curing, and the adhesive force between the in-film adhesive layer and the pressure-sensitive adhesive layer after UV curing becomes very low, thereby enabling effective adhesion and debonding to enable the increase in the efficiency of wafer dicing and semiconductor chip pickup processes.
Drawings
Fig. 1 to 3 are schematic views of an antistatic DAF according to a preferred embodiment of the present invention.
Fig. 4 schematically shows a schematic view in which the adhesive layer of the DAF of the present invention is laminated with a wafer before UV curing, and then the adhesive force with the PSA is weakened by UV curing, so that the adhesive layer of the DAF is picked up together with the wafer to stack chips.
Description of the symbols
1: adhesive layer
2: pressure sensitive adhesive layer
3: a polyolefin film layer,
4. 4': antistatic layer
10: cutting film
30: release film layer
100. 200, 300, 400: antistatic DAF
Detailed Description
In the terms used in the present invention, the "B-stage (B-stage) state" refers to a semi-cured state, specifically, an intermediate state in a curing reaction of the material. Further, the "C-stage state" means a completely cured state.
The present invention will be described in more detail below.
In the pre-grinding Dicing (DBG) or SDBG wafer cutting process, after attaching DAF to the back surface of the wafer whose back surface is ground, a background tape attached to the opposite surface of the ground back surface of the wafer is peeled off, and then the DAF is subjected to an expanding (expanding) process and a UV irradiation process. Thereafter, a semiconductor chip pickup process, a semiconductor chip stacking (stack) process, a wire bonding process, and an EMC molding process are sequentially performed to prepare a semiconductor chip.
When DAF is bonded, an electric double layer (+ layer and-layer) due to charge transfer is formed by contact with a semiconductor, and at the time of a semiconductor chip pickup process, the adhesive layer in the DAF film is separated from the dicing film layer (including the pressure-sensitive adhesive layer), and peeling static electricity occurs at this time. The DAF film is subjected to an expansion (expanding) step and the like, and the appropriate adhesive force is maintained until the UV irradiation step. After UV irradiation, the adhesive force should be reduced in order to smoothly pick up the semiconductor chip.
The present invention relates to an antistatic die attach film (hereinafter referred to as DAF) satisfying the above-described conditions.
As shown in the schematic diagrams of fig. 1 to 2, the DAF of the present invention includes: a dicing film 10, 10 'including an antistatic layer 4, 4', a polyolefin film (PO film) layer 3, and a Pressure Sensitive Adhesive (PSA) layer 2; and an adhesive layer 1 laminated on the upper portion of the pressure-sensitive adhesive layer 2 of the dicing film.
Further, as shown in the schematic diagram of fig. 1, in the dicing film of DAF of the present invention, an antistatic layer 4, a polyolefin film layer 3, and a pressure-sensitive adhesive layer 2 may be sequentially laminated.
As shown in the schematic diagram of fig. 2, in the dicing film of the DAF of the present invention, a polyolefin film layer 3, an antistatic layer 4', and a pressure-sensitive adhesive layer 2 may be sequentially laminated.
When the DAF of the present invention is viewed from the upper direction of the adhesive layer 1, the above adhesive layer 1 exists inside the pressure-sensitive adhesive layer 2, and the area of the adhesive layer may be smaller than that of the pressure-sensitive adhesive layer.
Also, in the DAF of the present invention, the protective film layers (or release film layers) 30, 30' may be further laminated on the upper portion of the above-described adhesive layer 1, and may be formed in various forms as shown in a to C of fig. 3.
Next, the dicing film and the adhesive layer constituting the DAF of the present invention will be specifically described.
The polyolefin film layer constituting the dicing film is used as a substrate, and examples thereof may include one or two or more polyolefin resins selected from the group consisting of low density polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, polyolefin copolymers of block copolymer polypropylene, and ethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic acid copolymers, and ethylene- (meth) acrylic acid ester copolymers, preferably, may include one or two or more polyolefin resins selected from the group consisting of low density polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, and random copolymer polypropylene, and may be formed in a single layer or multiple layers.
Next, the antistatic layer constituting the dicing film is used to prevent device breakdown from occurring due to charge charging at the time of semiconductor packaging by reducing the peeling static voltage of DAF, and has an average thickness of 1 to 35nm, preferably 2 to 30nm, more preferably 2 to 25 nm. At this time, if the antistatic layer is formed to have an average thickness of less than 1nm, there is a technical limitation and there may be a problem in that the peeling static voltage increases to 1kV or more, and if the average thickness of the antistatic layer is more than 35nm, the UV transmittance decreases to less than 5%, thereby possibly causing a problem in that it is difficult to UV-cure the pressure-sensitive adhesive layer.
Further, the antistatic layer may be made of Al or Al2O3One or two or more of Indium Tin Oxide (ITO), nickel (Ni), and silver (Ag).
[ pressure-sensitive adhesive layer ]
Second, the pressure-sensitive adhesive layer constituting the dicing film needs to maintain high adhesive force with the adhesive layer before the adhesive layer is UV-cured, and after the adhesive layer is UV-cured, the adhesive force becomes weak, so that it is easily peeled from the adhesive layer. The pressure-sensitive adhesive layer may be formed by casting coating and drying a pressure-sensitive adhesive resin directly on one side of the polyolefin film or the antistatic layer, or by preparing a separate pressure-sensitive adhesive film using a pressure-sensitive adhesive resin and then laminating the pressure-sensitive adhesive film on one side of the polyolefin film or the antistatic layer.
the average thickness of the pressure-sensitive adhesive layer in the DAF of the present invention is preferably 5 μm to 30 μm, in which case, if the thickness of the pressure-sensitive adhesive layer is less than 5 μm, the dicing film is detached from the ring frame during the die-expanding process due to insufficient adhesive force, and if the thickness is more than 30 μm, residual solvent remains upon drying after casting the film, resulting in a problem of immobilization with the adhesive bonding film.
The pressure-sensitive adhesive resin used in forming the above pressure-sensitive adhesive layer includes an acrylic copolymer resin, a thermal curing agent, and a photoinitiator.
The above-mentioned acrylic copolymer resin preferably includes a copolymer of 10 to 40 parts by weight of 2-hydroxyethyl acrylate and 10 to 45 parts by weight of 2-methacryloyloxyethyl isocyanate with respect to 100 parts by weight of 2-ethylhexyl acrylate copolymerization, preferably, a copolymer of 15 to 38 parts by weight of 2-hydroxyethyl acrylate and 20 to 40 parts by weight of 2-methacryloyloxyethyl isocyanate with respect to 100 parts by weight of 2-ethylhexyl acrylate copolymerization, and more preferably, a copolymer of 15 to 35 parts by weight of 2-hydroxyethyl acrylate and 25 to 38.5 parts by weight of 2-methacryloyloxyethyl isocyanate with respect to 100 parts by weight of 2-ethylhexyl acrylate copolymerization.
At this time, if the 2-hydroxyethyl acrylate is used in an amount of less than 10 parts by weight, the adhesive force of the pressure-sensitive adhesive layer at 0 ℃ or less may be very low, and if it is used in an amount of more than 40 parts by weight, there may be a problem of having the maximum adhesive force at about-7 to-10 ℃. Also, if the methacryloyloxyethyl isocyanate is less than 10 parts by weight, there is a problem of having maximum adhesion at about-3 to-5 ℃. If the amount is more than 45 parts by weight, the adhesive force of the PSA after UV curing becomes too low, resulting in the possibility of problems of detachment of the ring frame or scattering of the chips in the pick-up process.
The acrylic copolymer resin may be a copolymer obtained by copolymerizing one or two selected from ethylhexyl methacrylate and hydroxyethyl methacrylate in addition to 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacryloyloxyethyl isocyanate.
More specifically, the above acrylic copolymer resin may be prepared by further copolymerizing 5 to 135 parts by weight of the above ethylhexyl methacrylate, preferably, 5 to 75 parts by weight of ethylhexyl methacrylate, and more preferably, 6 to 45 parts by weight of ethylhexyl methacrylate, with respect to 100 parts by weight of 2-ethylhexyl acrylate.
also, the above acrylic copolymer resin may be prepared by further copolymerizing 3 to 30 parts by weight of hydroxyethyl methacrylate, preferably 4 to 20 parts by weight of hydroxyethyl methacrylate, and more preferably 5 to 10 parts by weight of hydroxyethyl methacrylate with respect to 100 parts by weight of 2-ethylhexyl acrylate.
Also, the content of the above acrylic copolymer resin is preferably 90 to 97 weight percent, preferably 91 to 96.5 weight percent, and more preferably 92 to 96 weight percent, with respect to the total weight of the pressure-sensitive adhesive resin. At this time, if the content of the acrylic copolymer resin is less than 90 weight percent, low-temperature adhesive force before UV curing between the pressure-sensitive adhesive layer and the adhesive layer may be low, and if the above content is more than 97 weight percent, there may be a problem that overall adhesive property is deteriorated since other components are relatively too small.
Also, the above pressure-sensitive adhesive resin may include 2 to 8 weight percent of a heat curing agent, preferably, 3 to 7 weight percent of a heat curing agent, and if the content of the heat curing agent is less than 2 weight percent, there may be a problem that the pressure-sensitive adhesive layer is transferred to the ring frame or the adhesive film layer due to insufficient cohesion of the pressure-sensitive adhesive layer, and if the content is more than 8 weight percent, the UV pre-adhesive force becomes too low, resulting in a problem of detachment from the ring frame. Also, as the above-mentioned thermal curing agent, general thermal curing agents used in the art may be used, preferably, polyisocyanates may be used, and more preferably, polyisocyanates including at least one selected from the group consisting of toluene diisocyanate, diphenylmethane diisocyanate, and hexamethylene diisocyanate may be used.
Also, the above pressure-sensitive adhesive resin may include 0.1 to 2 weight percent of the photoinitiator, preferably, may include 0.4 to 1.5 weight percent of the photoinitiator, and more preferably, may include 0.5 to 1.2 weight percent of the photoinitiator. Further, as the photoinitiator, a conventional photoinitiator used in the art may be used, and preferably, as the photoinitiator, one or a mixture of two or more selected from benzophenone, acetophenone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2, 4-diethylthioxanthone, hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, and β -chloroanthraquinone may be used.
The above dicing film including the antistatic layer, the polyolefin film layer and the pressure-sensitive adhesive layer as described above has an average thickness of 60 to 150 μm, and preferably 80 to 130 μm, and at this time, if the average thickness of the dicing film is less than 60 μm, the film is torn or force is not smoothly transferred when the wafer is expanded, and thus the wafer is not divided. If the average thickness is more than 150 μm, too much force may be transferred to the wafer when the thin film is expanded, thereby possibly causing the chips to fly.
[ adhesive layer ]
Next, the above adhesive layer may be formed by casting and drying an adhesive resin (or adhesive) on one side of the pressure-sensitive adhesive layer, or after forming an adhesive film by using the adhesive resin, the above adhesive film is laminated on one side of the pressure-sensitive adhesive layer to be integrated with a dicing film.
The above adhesive layer of the present invention is in a B-stage state, and when the PSA adhesive force is weakened by UV curing after lamination with the wafer, the adhesive layer is picked up together with the wafer to laminate chips (refer to fig. 4).
The adhesive resin (or adhesive) used for forming the adhesive layer may be prepared by mixing a composition including a thermoplastic resin, an epoxy resin, a curing agent, an inorganic filler, a curing accelerator, and a coupling agent.
The number average molecular weight of the above thermoplastic resin may be 600,000 to 1,000,000, preferably, the number average molecular weight may be 700,000 to 900,000, more preferably, 740,000 to 870,000. In this case, if the number average molecular weight of the thermoplastic resin is less than 600,000, there is a problem that reliability is lowered due to insufficient heat resistance. If the number average molecular weight is more than 1,000,000, there is a problem that initial adhesive properties are deteriorated due to excessive cohesive force.
As such a thermoplastic resin, an acrylic copolymer resin can be used, preferably an acrylic copolymer resin having a glass transition temperature of 10 to 20 ℃, more preferably an acrylic copolymer resin having a glass transition temperature of 12 to 18 ℃. The above acrylic copolymer resin may be a copolymer of ethyl acrylate, butyl acrylate, methyl methacrylate and, glycidyl acrylate and acrylonitrile, in which case glycidyl acrylate and acrylonitrile as monomers of the above copolymer may be copolymerized in a weight ratio of 6.5 to 12, and more preferably, glycidyl acrylate and acrylonitrile may be copolymerized in a weight ratio of 8 to 10.
Also, the content of the thermoplastic resin is preferably 60 to 75 weight percent, preferably 62 to 74 weight percent, more preferably 65 to 72 weight percent, relative to the total weight of the adhesive resin, and if the content of the thermoplastic resin is less than 60 weight percent, the reinforced film may have insufficient elasticity before curing, thereby deteriorating the adhesive effect and being difficult to manufacture. If the content of the thermoplastic resin is more than 75 weight percent, the total crosslinking degree is low due to insufficient content of the thermosetting part, resulting in problems of reduced adhesion and insufficient heat resistance after curing.
And, in the above adhesive resin component, the above epoxy resin is preferably prepared by mixing a bisphenol-based epoxy resin and a cresol novolak-based epoxy resin in a ratio of 1: 0.2 to 1.2, preferably in a weight ratio of 1: 0.5 to 1.2 by weight. At this time, if the cresol novolac epoxy resin is used in an amount less than 0.2 weight ratio, crosslinking points for forming three-dimensional crosslinks may be insufficient and heat resistance may be insufficient. If the amount of the cresol novolak epoxy resin used exceeds 1.2 weight%, the degree of crosslinking becomes too high, which may cause a problem of poor impact resistance. Further, the bisphenol type epoxy resin is preferably a bisphenol A type epoxy resin having an equivalent weight of 400 to 500g/eq and a softening point of 57 to 70 ℃, and more preferably a bisphenol A type epoxy resin having an equivalent weight of 440 to 495g/eq and a softening point of 60 ℃ to 68 ℃. Also, the cresol novolak-based epoxy resin may be a cresol novolak epoxy resin having an equivalent weight of 150 to 250g/eq and a softening point of 48 to 54 ℃, and more preferably a cresol novolak epoxy resin having an equivalent weight of 180 to 220g/eq and a softening point of 50 to 54 ℃. Also, the content of the epoxy resin is preferably 10 to 25 weight percent, preferably 12 to 22 weight percent, and more preferably 15 to 20 weight percent, with respect to the total weight of the binder resin. If the epoxy resin content is less than 10 weight percent, there may be a problem of insufficient adhesion of the reinforced film after curing. If the epoxy resin content is more than 25% by weight, brittleness before and after curing is strong, and thus there may be a phenomenon that an adhesive effect is reduced at the time of shearing, and impact resistance after curing may be problematic.
Also, in the binder resin component, the above curing agent may be a conventional curing agent used in the art, and it is preferable to use a phenol novolac resin having an OH equivalent of 95 to 120g/eq and a softening point of 110 to 130 ℃, and it is more preferable to use a phenol novolac resin having an OH equivalent of 100 to 110g/eq and a softening point of 115 to 125 ℃. Also, the content of the curing agent is preferably 2 to 10 weight percent, preferably 3 to 8 weight percent, more preferably 4 to 7.5 weight percent, with respect to the total weight of the binder resin. If the content of the curing agent is less than 2 weight percent, there may be a problem of insufficient adhesion since the crosslinking density is too low after curing of the reinforced film. If the content of the curing agent is more than 10 weight percent, there may be a problem of reliability degradation due to the remaining unreacted curing agent.
Also, in the binder resin component, the above-mentioned inorganic filler is used to supplement dimensional stability and heat resistance, and one or more selected from silica, alumina, carbon black, titanium dioxide, and barium titanate may be used. Further, the average particle diameter of the above inorganic filler is 10 to 100nm, preferably 10 to 50 nm. Also, the content of the inorganic filler is 4 to 15 weight percent, preferably 6 to 13 weight percent, more preferably 7 to 12.5 weight percent, with respect to the total weight of the adhesive resin, and if the content of the inorganic filler is less than 4 weight percent, the thermal expansion coefficient may increase, so that the adhesive force between the substrates may be deteriorated due to thermal expansion and contraction. If the content is more than 15 weight percent, there may be a problem that the adhesive force is remarkably reduced.
Also, in the adhesive resin component, the above-mentioned curing accelerator is used to accelerate curing when UV curing is performed on the adhesive layer in the B stage, and an imidazole-based curing accelerator or a phosphorus-based curing accelerator may be used, and an imidazole-based curing accelerator is preferably used. At this time, the aforementioned imidazole-based curing accelerator may include one or more selected from the group consisting of 2E4MZ, 2E4MZ-A, 2E4MZ-CN, 2PZ-CN, 2P4MZ, C11Z, C11Z-CN, C11Z-CNS, C17Z, 2MZ-H, 2PHZ-S, 2PHZ-PW, 2P4MHZ-PW and TBZ of the four-country company. Further, the above-mentioned phosphorus-based curing accelerator may include one or more selected from the group consisting of triphenylphosphine, tributylphosphine, trimethylphenylphosphine, trimethylsilylphosphine, phosphine oxide, triphenylphosphonium triphenylborate, tetraphenylphosphonium and tetraphenylphosphonate. Also, the content of the curing accelerator is 0.1 to 2 weight percent, preferably 0.1 to 1 weight percent, and more preferably 0.1 to 0.8 weight percent, with respect to the total weight of the binder resin. If the content of the curing accelerator is less than 0.1% by weight, there is a possibility that the productivity is significantly lowered because the curing time of the product becomes too long in the process, and if the content of the curing accelerator is more than 1% by weight, there is a possibility that the service time is shortened because the stability with time is insufficient.
Also, in the binder resin component, the above-mentioned coupling agent plays a role of increasing the adhesive force due to the chemical bonding between the surface of the inorganic filler and the organic material, and a general coupling agent used in the art may be used, but a silane coupling agent is preferably used. Also, the content of the coupling agent is 0.1 to 4 weight percent, preferably 0.5 to 2.5 weight percent, more preferably 0.5 to 2 weight percent, with respect to the total weight of the binder resin. If the content of the coupling agent is less than 0.1 weight percent, there may be a problem of a decrease in adhesive force due to insufficient surrounding of the surface of the inorganic filler, and if the content of the coupling agent is more than 4 weight percent, the content of the volatile low-molecular material becomes too high, thereby decreasing reliability due to the remaining coupling agent.
In the present invention, the average thickness of the above adhesive layer is 3 μm to 60 μm, preferably 5 μm to 55 μm, and more preferably 10 μm to 50 μm. If the average thickness of the adhesive layer is less than 3 μm, there may be a problem in that pickup performance is deteriorated. If the average thickness is greater than 60 μm, the pickup performance is poor and the chips may be divided when the dicing process is expanded.
The storage elastic modulus of the adhesive layer before UV curing may satisfy the following equation 6.
0 ≦ value of storage elasticity at 25 ℃ before UV curing of the adhesive layer (Mpa)/value of storage elasticity at 130 ℃ before UV curing of the adhesive layer (Mpa) ≦ 90, preferably 18 ≦ value of storage elasticity at 25 ℃ before UV curing of the adhesive layer (Mpa)/value of storage elasticity at 130 ℃ before UV curing of the adhesive layer (Mpa) ≦ 90, more preferably 20 ≦ value of storage elasticity at 25 ℃ before UV curing of the adhesive layer (Mpa)/value of storage elasticity at 130 ℃ before UV curing of the adhesive layer (Mpa) ≦ 80.
In the above equation 6, the above storage elasticity value is obtained by measuring a sample having a width of 20mm and a length of 5mm under the conditions of a temperature rise rate of 10 ℃/min, a measurement temperature of-30 ℃ to 300 ℃ and a measurement frequency of 10Hz using a dynamic thermo-mechanical analyzer, which is available from Perkin Elmer under the product name of Diamond DMA.
Also, the storage elastic modulus value at 260 ℃ after UV curing of the above adhesive layer may be 3MPa or more, preferably, may be 3.2 to 11 MPa. Also, the storage elastic modulus value at 25 ℃ after UV curing of the above adhesive layer may be 140 to 300MPa, preferably, 148 to 275 MPa.
And, when the thickness of the adhesive layer is 20 μm, the shear adhesive strength at 260 ℃ after curing of the adhesive layer may be 4 to 10MPa, preferably, 4.5 to 9.0 MPa. The shear adhesion strength is related to the reflow (reflow) property of the adhesive film, and if the shear adhesion strength is less than 4MPa, there may be problems such as excessively low adhesion, deterioration in reflow property, and generation of cracks in the adhesive film, and if the shear adhesion strength is more than 10MPa, there may be a problem of reduction in impact resistance of the adhesive film.
In the DAF of the present invention, the adhesive force at 22 ℃ between the pressure-sensitive adhesive layer of the dicing film and the adhesive layer may be 80 to 300N/m, preferably 100 to 200N/m, and more preferably 120 to 180N/m before the ultraviolet curing, and the adhesive force at 22 ℃ between the pressure-sensitive adhesive layer of the dicing film and the adhesive layer may be 4 to 20N/m, preferably 4 to 15N/m or less, and more preferably 5 to 15N/m after the ultraviolet curing. In this case, if the adhesive force at 22 ℃ is less than 4N/m, the adhesive force is too low, and thus the chips may be separated or scattered during the dicing process.
Also, in the DAF of the present invention, the adhesive force between the pressure-sensitive adhesive layer and the adhesive layer becomes the maximum adhesive force at a temperature of-15 ℃ to-10 ℃, preferably, at a temperature of-15 ℃ to-13 ℃, and the maximum adhesive force may be 300 to 700N/m.
Also, in the DAF of the present invention, the adhesive force between the pressure-sensitive adhesive layer of the above dicing film and the above adhesive layer before UV curing satisfies the following equations 1 to 5, and the adhesive force at-13 ℃ to-15 ℃ is higher than the adhesive force at-7 ℃ to-10 ℃.
[ equation 1]
An adhesive force at 150N/m.ltoreq.0 ℃ of 470N/m, preferably at 180N/m.ltoreq.0 ℃ of 450N/m
[ equation 2]
An adhesive force at 220N/m.ltoreq.3 ℃ to-5 ℃ of 520N/m or less, preferably an adhesive force at 245N/m.ltoreq.3 ℃ to-5 ℃ of 510N/m
[ equation 3]
An adhesive force at 300N/m-7 ℃ to-10 ℃ of 540N/m or less, preferably an adhesive force at 305N/m-7 ℃ to-10 ℃ of 505N/m or less
[ equation 4]
An adhesive force at 305N/m-13 ℃ to-15 ℃ of 700N/m or less, preferably an adhesive force at 310N/m-13 ℃ to-15 ℃ of 600N/m or less
[ equation 5]
an adhesive force at-18 ℃ to-20 ℃ of 500N/m or less, preferably, an adhesive force at 200N/m or less at-18 ℃ to-20 ℃ of 450N/m or less
The antistatic Die Attach Film (DAF) of the present invention as described above may be prepared by performing a process including the steps of: step 1, preparing a cutting film comprising an antistatic layer, a polyolefin film layer and a pressure-sensitive adhesive layer; and a step 2 of integrating the adhesive film by laminating the adhesive film on the upper portion of the pressure-sensitive adhesive layer of the dicing film or casting an adhesive on the upper portion of the pressure-sensitive adhesive layer of the dicing film and drying to form the adhesive layer.
In the above dicing film of step 1, an antistatic layer, a polyolefin thin film layer, and a pressure-sensitive adhesive layer may be sequentially stacked, or a polyolefin thin film layer, an antistatic layer, and a pressure-sensitive adhesive layer may be sequentially stacked.
Also, the above adhesive film or adhesive layer of step 2 is in a B-staged state.
As described above, in the present invention, the wafer dicing process of pre-polishing Dicing (DBG) or pre-polishing Stealth Dicing (SDBG) can be performed using the above-described antistatic die attach film.
The present invention will be described more specifically with reference to the following examples, which should not be construed as limiting the scope of the present invention but as aiding in the understanding of the present invention.
[ examples ]
Preparation example 1-1 preparation of resin for adhesive and adhesive film
67 weight percent of an acrylic copolymer having a number average molecular weight of 800,000 and a glass transition temperature of 15 ℃ and containing 3 weight percent of glycidyl acrylate (N Co., trade name: SG-P3) as a thermoplastic resin, 8 weight percent of a bisphenol A epoxy resin having an equivalent weight of 475g/eq and a softening point of 65 ℃ (K Chemical Co., trade name: YD-011), 8 weight percent of a cresol novolak epoxy resin having an equivalent weight of 200g/eq and a softening point of 52 ℃ (K Chemical Co., trade name: YDCN 1P), 6 weight percent of a phenol novolak resin having an OH equivalent weight of 106g/eq and a softening point of 120 ℃ (Kolon Chemical Co., Ltd., trade name: KPH-F2004) as a curing agent, 9.5 weight percent of silica having an average particle diameter of 15 to 17nm (Aerosil R972 made by E Co., Ltd.), An imidazole compound (Curezol 2PH, a product of chemical industry of four countries) as a curing accelerator was mixed with 0.5 wt% of a silane coupling agent (KBM-303, Shin-Etsu Co., Ltd.) to prepare a resin for an adhesive.
Next, the above resin for an adhesive was cast on a release-treated polyester film, and then hot-air dried at 140 ℃ for 5 minutes to prepare a B-stage adhesive film having an average thickness of 20 μm.
Preparative examples 1-2 to 1-7 and comparative preparative examples 1-1 to 1-6
Preparation examples 1-2 to 1-7 and comparative preparation examples 1-1 to 1-6 were carried out by preparing an adhesive resin and an adhesive film in the same manner as in the above preparation example 1-1, preparing resins having the compositions and composition ratios shown in the following table 1, and then using the resins to prepare adhesive films, respectively.
TABLE 1
Experimental example 1 measurement of physical Properties of adhesive film
Storage elastic modulus and adhesive strength of physical properties of the adhesive films prepared as the preparation examples and the comparative preparation examples were measured by the following methods, and the results are shown in table 2 below.
(1) Determination of storage elastic Rate
For a sample of 20mm × 5mm × 20 μm (width × length × thickness) size laminated in 50 layers, the storage elastic modulus was measured based on the measurement method by using a dynamic thermomechanical analyzer (Perkin Elmer corporation, Diamond DMA) and applying a measurement temperature of-30 ℃ to 300 ℃ (temperature rise rate of 10 ℃/minute) and a measurement frequency of 10 Hz. Also, the storage elastic rate values of the adhesive film in the B-stage state before curing at 25 ℃ and 130 ℃ were measured, and the storage elastic rates of the adhesive film in the C-stage state at 25 ℃ and 260 ℃ after curing were measured for the adhesive film of the same composition. Also, the storage modulus values of table 2 are values obtained by dividing the measured storage modulus values by the thickness of the sample.
(2) Determination of shear adhesion Strength
As for the shear adhesive strength, an adhesive film (thickness: 20 μm) was attached to an upper substrate wafer (wafer) having a thickness of 0.5mm at 60 ℃, cut into a size of 5mm × 5mm, adhered to a lower substrate wafer having a thickness of 0.5mm at 130 ℃ and a pressure of 1kgf, and cured at 180 ℃ for 2 hours. After completion of curing, the shear adhesive strength of the lower substrate wafer was measured at a speed of 0.5mm/sec and at 260 ℃. At this time, after curing, the shear adhesive strength at 260 ℃ must be in the range of 4 to 10 MPa.
TABLE 2
As shown in the measurement results of Table 2 above, the adhesive films of preparation examples 1-1 to 1-7 exhibited appropriate ranges of storage elastic modulus and adhesive strength before and after curing, as a whole.
In contrast, in the case of comparative preparation example 1-1, in which the content of the thermoplastic resin was less than 60 weight%, the adhesive layer was easily broken due to lack of elasticity before curing, and thus it was difficult to prepare. Therefore, there is a problem that the storage elastic modulus at 130 ℃ cannot be measured. In the case of comparative preparation example 1-2 in which the content of the thermoplastic resin was more than 75% by weight, the ratio of the storage modulus of elasticity at 25 ℃/130 ℃ was less than 20 because the content of the thermosetting moiety was insufficient and the total degree of crosslinking was low, and the storage modulus of elasticity at 260 ℃ after curing was low, which resulted in the problems of a decrease in adhesive force and insufficient heat resistance.
Also, in the case of comparative preparation examples 1 to 3 in which cresol novolac resin was not used in the epoxy resin, the crosslinking points forming three-dimensional intersections were insufficient, and thus there was a problem of insufficient heat resistance and adhesion, and in the case of comparative preparation examples 1 to 4 in which cresol novolac based epoxy resin was used in an amount of more than 1.2 parts by weight, the storage modulus of elasticity and the adhesive strength were excellent as a whole, but the 25 ℃/130 ℃ storage modulus of elasticity ratio exceeded 90 and the degree of crosslinking was too high, and thus there was a problem of poor impact resistance.
In the case of comparative preparation examples 1 to 5 in which the amount of the inorganic filler used was less than 4 weight percent, the coefficient of thermal expansion was increased, and thus there was a problem in that the adhesive force between substrates was reduced due to thermal expansion and contraction at 260 ℃ after curing, and there was a problem in that the storage elastic modulus at 260 ℃ was too low. Also, in the case of comparative preparation examples 1 to 6 in which the amount of the inorganic filler used was more than 15 wt%, the adhesive force was remarkably reduced due to insufficient filling property with respect to the lower substrate wafer.
Preparative example 2-1 preparation of PSA adhesive resin and laminated film
A mixed resin of 94 weight percent of an acrylic copolymer resin having a number average molecular weight of 600,000 and a glass transition temperature of-40 ℃, 5 weight percent of polyisocyanate (AK 75 from Aekyung Chemical industries, ltd.) as a heat curing agent, and 1 weight percent of photoinitiator (Ciba specialty Chemical Inc, IRGACURE 184) was cast on the release-treated polyester film, and then hot air-dried at 140 ℃ for 5 minutes to obtain a PSA film having an average thickness of 10 μm. Thereafter, a pressure-sensitive adhesive layer was laminated to an 80 μm polyolefin film (made of a polyolefin resin including EPG-80 prepared by pilmax co., medium density polyethylene, and random copolymer polypropylene) at room temperature (15 to 30 ℃) to prepare a laminated film.
At this time, the above acrylic copolymer resin was prepared by copolymerizing 33.3 parts by weight of 2-hydroxyethyl acrylate and 33.3 parts by weight of 2-methacryloyloxyethyl isocyanate with respect to 100 parts by weight of 2-ethylhexyl acrylate.
preparatory examples 2-2 to 2-5 and comparative preparatory examples 2-1 to 2-6
A laminated film was prepared in the same manner as in preparation example 2-1 described above, except that after the acrylic copolymer resin having the composition shown in table 3 below, laminated films having the compositions of table 3 below were respectively prepared using them.
TABLE 3
Experimental example 2 temperature-based adhesion measurement of pressure-sensitive adhesive layer to adhesive layer
The pressure-sensitive adhesive layer direction of the laminated films prepared in the above preparation examples 2-1 to 2-5 and comparative preparation examples 2-1 to 2-6 was laminated with the adhesive film of preparation example 1-1 using a 25 ℃ roll laminator, and then cut in the dimensions of 25mm (width) × 100mm (length) to prepare samples. Next, the prepared sample was roll-laminated at 60 ℃ in the direction of the adhesive layer of the DAF film on the back surface of an 8-inch silicon wafer having a thickness of 500 μm (wafer subjected to #2300 grinding treatment with a DFD-840 grinding apparatus manufactured by DISCO co., ltd.), and then the temperature-based UV-curing pre-adhesion (-20 to 22 ℃) of the cut film to the adhesive layer was measured at an angle of 180 ° and a speed of 300 mm/min.
Further, after UV curing, a high-pressure mercury lamp ultraviolet irradiator (Dymax 2000-EC, Dymax Co.) was used to irradiate the cut film at 200mJ/cm from the cut film side2The adhesive force was measured at 22 ℃ by irradiating ultraviolet rays. The results of the temperature-based adhesion of the pressure-sensitive adhesive layer to the adhesive layer before UV-curing and the adhesion at 25 ℃ after UV-curing are shown in table 4 below.
TABLE 4
Referring to the experimental results of table 4 above, in the case of preparation examples 2-1 to 2-7, equations 1 to 5 were satisfied and the adhesive force at-15 ℃ was higher than that at-10 ℃ or-20 ℃.
In contrast, in the case of comparative preparatory example 2-1, in which HEA was not included in the acrylic copolymer resin, the maximum adhesive force was exhibited at about 0 deg.C, and in the case of comparative preparatory example 2-2, the maximum adhesive force was exhibited at-5 deg.C. Also, in the case of comparative preparation examples 2-3, in which the HEA content was more than 40 parts by weight, the maximum adhesive force was exhibited at-10 ℃. In the case of comparative preparation examples 2 to 4 having an MOI content of more than 45 weight percent, the low-temperature adhesive force has a maximum value at-15 ℃ and has a proper adhesive force. However, after UV curing, a problem occurs in that the chips scatter due to too low adhesive force. Also, in the case of comparative preparation examples 2 to 5 in which the content of HEA was less than 10 parts by weight, the adhesive force after UV curing was excessively high at 20N/m. Also, in the case of comparative preparation examples 2-6 using the pressure-sensitive adhesive resin having the content of the acrylic copolymer resin of less than 90 weight percent, the low-temperature adhesive force as a whole was lower as compared with preparation examples 2-1 to 2-7.
Preparation example 3-1 preparation of antistatic layer-formed polyolefin film
For the polyolefin film (EPG-80 from filmax Co.) having a thickness of 80 μm used in preparation example 2-1, the temperature was 1000 ℃ and 3X 10-4Aluminum was deposited on the back surface of the corona-treated dicing film in a crucible under a torr atmosphere to prepare an antistatic layer-formed polyolefin thin film having a thickness of about 2 nm.
Preparatory examples 3-2 to 3-5 and comparative preparatory examples 3-1 to 3-3
Polyolefin films having antistatic layers formed were prepared in the same manner as in preparation example 3-1 described above, except that antistatic layers were formed at thicknesses shown in table 5 below to prepare polyolefin films, respectively.
Experimental example 3 measurement of physical Properties of antistatic layer-formed polyolefin film
The transmittance and surface resistance of each of the polyolefin films prepared in preparation examples 3-1 to 3-5 and comparative preparation examples 3-1 to 3-3 were measured, and the results thereof are shown in table 5 below.
At this time, the transmittance was measured in a wavelength region of 550nm by using an ultraviolet/visible spectrometer (V-550 by JASCO Co.). When the UV transmittance is less than 5%, ultraviolet rays do not transmit and ultraviolet curing of the pressure-sensitive adhesive layer cannot be smoothly achieved, and therefore, if the transmittance is 5%, it is not acceptable.
Then, the surface resistance was measured at a voltage of 100V using a surface resistance measuring instrument (152-1 resistance measuring instrument of Trek Co.).
TABLE 5
Referring to the measurement results of table 5 above, it can be confirmed that preparation examples 3-1 to 3-5 have a transmittance of 5% or more and have appropriate surface resistance. In contrast, in the case of comparative preparation examples 3-1 and 3-2 in which the antistatic layer was greater than 40nm, the transmittance was less than 5%, that is, the transmittance was too low, and the surface resistance was not lower than that of preparation example 3-5.
Through the present experiment, it was confirmed that the thickness of the antistatic layer was formed to be less than 40nm at maximum, preferably, equal to or less than 30nm, and 1nm or more at minimum, preferably, equal to or more than 2nm, which is advantageous in terms of transmittance and surface resistance.
Example 1 preparation of antistatic die attach film
The antistatic layer-formed polyolefin film prepared in preparative example 3-1 was prepared. After laminating the PSA film prepared in preparation example 2-1 on the other side of the antistatic layer-formed polyolefin film described above, the polyester film as a release film was peeled off. Next, the adhesive film of preparation example 1-1 was laminated (or laminated) on top of the PSA film to prepare a DAF film in which an antistatic layer 4, a polyolefin film layer 3, a pressure-sensitive adhesive layer 2, and an adhesive layer 1 were sequentially laminated as shown in fig. 1.
Examples 2 to 5 and comparative examples 1 to 7
A DAF film in a form in which an antistatic layer-a polyolefin film layer-a pressure-sensitive adhesive layer-an adhesive layer were sequentially laminated was prepared in the same manner as in example 1 above, except that the dicing film was changed as shown in table 6 below.
Example 6
A DAF film in a form in which a polyolefin thin film layer 3-antistatic layer 4' -pressure-sensitive adhesive layer 2-adhesive layer 1 were sequentially laminated as shown in fig. 2 was prepared by using the dicing film prepared in preparation example 3-5 instead of the dicing film of preparation example 3-1.
TABLE 6
Experimental example 4 peeling Electrostatic Voltage of pressure-sensitive adhesive layer, measurement of adhesive force before and after UV curing, and measurement of pickup Property
(1) Measurement of peeling Electrostatic Voltage
The DAF films prepared in the above examples and comparative examples were subjected to UV irradiation and placed thereon in such a manner that the dicing film surface was in contact with an ITO substrate (glass), and then the adhesive film was peeled at a rate of 300 mm/min and the electrostatic voltage of the dicing film adhesive surface of the peeled adhesive film was measured. Static voltage was measured using a static DZ-4(shi hido) apparatus at a distance of 30mm from the cut film, and the results are shown in table 7 below.
For reference, in the case of comparative example 3, no antistatic layer was present.
(2) Adhesion measurement of pressure-sensitive adhesive layer to adhesive layer before and after UV curing
The adhesive force to the cut film of the adhesive layer before and after UV curing of the DAF films prepared in the above examples and comparative examples was measured, and the results thereof are shown in table 7 below. At this time, the peel strength of the adhesive layer of the pressure-sensitive adhesive layer of the dicing film before and after UV curing was measured by roll-laminating the DAF film in the direction of the adhesive layer of the DAF film on the back surface of an 8-inch silicon wafer (wafer obtained by #2300 grinding process with a DFD-840 grinding apparatus manufactured by DISCO corporation) having a thickness of 500 μm, and then peeling the pressure-sensitive adhesive layer and the adhesive layer of the dicing film at a speed of 300 mm/min by 180 °. For reference, after UV curing, the adhesive force of the pressure-sensitive adhesive layer is reduced, so that peeling from the adhesive layer (adhesive film) becomes easy.
TABLE 7
Referring to the measurement results of table 7 above, in the case of comparative example 3 without the antistatic layer, the peeling static voltage was higher than 1.2kV, and as described above, there was a problem that device breakdown due to charge charging may occur in the semiconductor package when the peeling static voltage was higher. In the case of examples 1 to 8 and comparative examples 3 to 6 in which the antistatic layer was formed, a low peeling static voltage equal to or less than 0.8kV was exhibited.
Also, it was confirmed that examples 1 to 8 exhibited a low adhesive force of less than 20N/m after UV curing, thereby ensuring proper releasability from the adhesive film (adhesive layer). However, in the case of comparative example 3 in which the thickness of the adhesive layer was 2 μm less than 3 μm, there was a problem in that the adhesive force between the contact layer and the pressure-sensitive adhesive layer could not be measured due to insufficient adhesive force with the wafer, and in the case of comparative example 4 in which the thickness of the adhesive layer was 65 μm more than 60 μm, there was a problem in that it also had high adhesive force more than 20N/m after UV curing.
Experimental example 5 test of whether the workability of DBG and SDBG was ensured
The maximum value of the adhesive force based on temperature and the DAF pickup of the DAF films of the examples and comparative examples were measured.
(1) Temperature-based maximum adhesion determination
Maximum values of adhesive force based on temperature (-20 ℃, -15 ℃, -10 ℃, -7 ℃, -3 ℃,0 ℃ and 5 ℃) between the adhesive layer and the pressure-sensitive adhesive layer of the DAF film were measured, and thereby, it was confirmed that the crack was ensured in the expanding (expanding) process and whether or not the sound was floated between the adhesive layer and the pressure-sensitive adhesive layer, and the results thereof are shown in table 8 below. At this time, the adhesive force shows the maximum adhesive force and the temperature at which the maximum adhesive force is reached.
(2) Whether the chip is split and whether floating occurs
With respect to whether or not the chip is split, the DAF film and the fixing ring frame are laminated together at 70 ℃ to an 8-inch wafer having a thickness of 100 μm. The wafer was cut into a size of 9mm × 12mm (width × height) using a dicer (DFD-6361 manufactured by Disco corporation) to leave a wafer thickness of 20 μm. The diced wafer and the ring frame on which the DAF was bonded were placed in an enlarging apparatus at-10 deg.C, and the dicing film was subjected to enlarging dicing processing at an enlarging speed of 80mm/sec and an enlarging height of 10 mm.
When the number of lines successfully split by actually expanding was 90% or more, it was determined to be good (O) and when the number of lines successfully split by actually expanding was less than 90%, it was determined to be bad (X) as compared with the total number of lines cut by the blade. Also, the floating between the adhesive layer and the dicing film PSA adhesive at the edge (edge) portion of the split wafer was determined to be "not occurred" when it was less than 1mm, and the floating between the adhesive layer and the dicing film PSA adhesive at the edge (edge) portion of the split wafer was determined to be "occurred" when it was equal to or greater than 1mm, and the results thereof are shown in table 8 below.
(3) Pickup determination of DAF films
Regarding the pickup property, the wafer and the DAF film split in the above experimental example 5- (2) were subjected to UV irradiation in the same manner as in the previous experimental example, and the wafer was picked up in an atmosphere of 22 ℃ using a pickup device (SPA-300 manufactured by SHINKAWA company). At this time, the height of the pin is picked up at 0.25mm and 0.30mm, and it is expressed as good (O) when the pick-up success rate is 95% or more, and it is expressed as bad (X) when the pick-up success rate is less than 95%.
TABLE 8
Referring to the measurement results of table 8 above, in the case of examples 1 to 8, floating did not occur and the chip was not split. Also, the pickup property is excellent.
In contrast, in the case of comparative example 5 and comparative example 6 in which the pressure-sensitive adhesive layer was formed using the pressure-sensitive adhesive resin of comparative preparatory example 2-1 or comparative preparatory example 2-2, the temperature at which the maximum adhesive force was exhibited was higher than in the examples, and the pickup was poor.
Also, comparative examples 1 and 2, in which the antistatic layer thicknesses were 40nm and 50nm, respectively, exhibited lower pick-up properties.
Also, in the case of comparative example 3 in which the thickness of the adhesive layer was 2 μm, there was a problem in that only the wafer was picked up at the time of picking up without picking up the adhesive layer due to insufficient adhesive force between the adhesive layer and the wafer. In the case of comparative example 4 in which the adhesive layer thickness was 65 μm, a problem of no wafer cracking occurred due to poor pickup property due to high adhesive force between the adhesive layer and the pressure-sensitive adhesive layer.

Claims (19)

1. An antistatic die attach film, comprising:
A dicing film including an antistatic layer, a polyolefin film layer, and a pressure-sensitive adhesive layer; and
An adhesive layer laminated on the upper part of the pressure-sensitive adhesive layer of the dicing film,
In the dicing film, an antistatic layer, a polyolefin film layer, and a pressure-sensitive adhesive layer are sequentially laminated, or a polyolefin film layer, an antistatic layer, and a pressure-sensitive adhesive layer are sequentially laminated.
2. The antistatic die attach film according to claim 1, wherein said antistatic layer comprises a material selected from the group consisting of Al and Al2O3One or more of ITO, Ni and Ag.
3. The antistatic die attach film according to claim 1, wherein the average thickness of the adhesive layer is 3 to 60 μm, the average thickness of the pressure sensitive adhesive layer is 5 to 30 μm, the average thickness of the dicing film layer is 60 to 150 μm, and the average thickness of the antistatic layer is 1 to 30 nm.
4. The antistatic die attach film according to claim 1, wherein the adhesive layer comprises an adhesive in a B-staged state or an adhesive film in a B-staged state.
5. The antistatic die attach film according to claim 4,
The adhesive comprises 60 to 75 weight percent of thermoplastic resin, 10 to 25 weight percent of the epoxy resin, 2 to 10 weight percent of curing agent, 4 to 15 weight percent of inorganic filler, 0.1 to 2 weight percent of curing accelerator and 0.1 to 4 weight percent of coupling agent.
6. The antistatic die attach film according to claim 1, wherein the adhesive layer has a peeling static voltage of 0.1kV to 0.8kV at a thickness of the antistatic layer of 5 to 30 nm.
7. The antistatic die attach film according to claim 1, wherein the surface resistance of said antistatic layer is 1 x 102To 1 x 1012ohm/sq。
8. The antistatic die attach film according to claim 1, wherein the storage modulus of elasticity of the adhesive layer before UV curing satisfies the following equation 6:
[ equation 6]
18 or less of the storage elasticity value (Mpa) at 25 ℃ before curing of the adhesive layer/storage elasticity value (Mpa) at 130 ℃ or less of the storage elasticity value (Mpa) before curing of the adhesive layer
In equation 6, the above storage elasticity value is obtained by measuring a sample having a width of 20mm and a length of 5mm under the conditions of a temperature rise rate of 10 ℃/minute, a measurement temperature of-30 ℃ to 300 ℃ and a measurement frequency of 10Hz using a dynamic thermomechanical analyzer, which is available from Perkin Elmer under the product name of Diamond DMA.
9. The antistatic die attach film according to claim 1, wherein the storage elastic value of the adhesive layer after UV curing at 260 ℃ is 3MPa or more, and when the thickness of the adhesive layer is 20 μm, the shear adhesive strength of the adhesive layer after curing at 260 ℃ is 4 to 10 MPa.
10. The antistatic die attach film according to claim 1,
The adhesive force at 22 ℃ between the pressure-sensitive adhesive layer of the dicing film and the adhesive layer is 80 to 300N/m before ultraviolet curing, and the adhesive force at 22 ℃ between the pressure-sensitive adhesive layer of the dicing film and the adhesive layer is 20N/m or less after ultraviolet curing.
11. The antistatic die attach film according to claim 10, wherein the adhesive force between said pressure sensitive adhesive layer and said adhesive layer becomes a maximum adhesive force at a temperature of-15 ℃ to-7 ℃, and said maximum adhesive force is 300 to 700N/m.
12. The antistatic die attach film according to claim 10, wherein the adhesive force between the pressure-sensitive adhesive layer of the dicing film and the adhesive layer is set such that the adhesive force before UV curing satisfies the following equations 1 to 5 and the adhesive force at-13 ℃ to-15 ℃ is higher than the adhesive force at-7 ℃ to-10 ℃.
[ equation 1]
The adhesive force is less than or equal to 470N/m at the temperature of less than or equal to 150N/m and less than or equal to 0 DEG C
[ equation 2]
An adhesive force of not more than 520N/m at a temperature of not less than 220N/m and not more than-3 ℃ and not more than-5 DEG C
[ equation 3]
The adhesive force is less than or equal to 540N/m at the temperature of between 300N/m and 7 ℃ below zero and 10 ℃ below zero
[ equation 4]
An adhesive force of not more than 700N/m at a temperature of not more than 305N/m and not more than-13 ℃ and not more than-15 DEG C
[ equation 5]
The adhesive force is less than or equal to 500N/m at the temperature of between 18 ℃ below zero and 20 ℃ below zero
13. The antistatic die attach film according to claim 1, wherein the pressure sensitive adhesive layer is formed of a pressure sensitive adhesive resin, and the pressure sensitive adhesive resin comprises 90 to 97 weight percent of an acrylic copolymer resin, 2 to 8 weight percent of a thermal curing agent, and 0.1 to 2 weight percent of a photoinitiator.
14. The antistatic die attach film according to claim 13, wherein the acrylic copolymer resin comprises a copolymer obtained by copolymerization of 10 to 40 parts by weight of 2-hydroxyethyl acrylate and 10 to 45 parts by weight of 2-methacryloyloxyethyl isocyanate with respect to 100 parts by weight of 2-ethylhexyl acrylate.
15. The antistatic die attach film according to claim 14,
The copolymer is obtained by further copolymerizing at least one selected from the group consisting of ethylhexyl methacrylate and hydroxyethyl methacrylate.
16. The antistatic die attach film according to claim 15,
The content of the aforementioned ethylhexyl methacrylate is 5 to 135 parts by weight with respect to 100 parts by weight of 2-ethylhexyl acrylate, and the content of the aforementioned hydroxyethyl methacrylate is 3 to 30 parts by weight with respect to 100 parts by weight of 2-ethylhexyl acrylate.
17. A preparation method of an antistatic die-piece adhesive film is characterized by comprising the following steps:
Step 1, preparing a cutting film comprising an antistatic layer, a polyolefin film layer and a pressure-sensitive adhesive layer; and
Step 2 of integrating by laminating an adhesive film on the upper portion of the pressure-sensitive adhesive layer of the above dicing film or casting an adhesive on the upper portion of the pressure-sensitive adhesive layer of the above dicing film and drying to form an adhesive layer,
In the dicing film, an antistatic layer, a polyolefin film layer, and a pressure-sensitive adhesive layer are sequentially laminated, or a polyolefin film layer, an antistatic layer, and a pressure-sensitive adhesive layer are sequentially laminated.
18. The method of manufacturing an antistatic die attach film according to claim 15, wherein the adhesive film or the adhesive layer is in a B-staged state.
19. a pre-grinding dicing or pre-grinding stealth dicing wafer dicing process, characterized by using the antistatic die attach film according to any one of claims 1 to 16.
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