CN1105324C - 薄膜晶体管阵列基板、液晶显示装置和该基板的制造方法 - Google Patents

薄膜晶体管阵列基板、液晶显示装置和该基板的制造方法 Download PDF

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Publication number
CN1105324C
CN1105324C CN96107917A CN96107917A CN1105324C CN 1105324 C CN1105324 C CN 1105324C CN 96107917 A CN96107917 A CN 96107917A CN 96107917 A CN96107917 A CN 96107917A CN 1105324 C CN1105324 C CN 1105324C
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China
Prior art keywords
pixel
electrode
metal
thin film
metal pattern
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Expired - Fee Related
Application number
CN96107917A
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English (en)
Chinese (zh)
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CN1142057A (zh
Inventor
阪本弘和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Advanced Display Inc
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Filing date
Publication date
Priority claimed from JP7131695A external-priority patent/JPH08328035A/ja
Priority claimed from JP15486395A external-priority patent/JPH095785A/ja
Priority claimed from JP15486495A external-priority patent/JPH095786A/ja
Application filed by Advanced Display Inc filed Critical Advanced Display Inc
Publication of CN1142057A publication Critical patent/CN1142057A/zh
Application granted granted Critical
Publication of CN1105324C publication Critical patent/CN1105324C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CN96107917A 1995-05-30 1996-05-30 薄膜晶体管阵列基板、液晶显示装置和该基板的制造方法 Expired - Fee Related CN1105324C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP7131695A JPH08328035A (ja) 1995-05-30 1995-05-30 液晶表示装置およびその製法ならびに点欠陥の修復方法
JP131695/95 1995-05-30
JP131695/1995 1995-05-30
JP15486395A JPH095785A (ja) 1995-06-21 1995-06-21 Ｔｆｔアレイ基板並びにこれを用いた液晶表示装置およびｔｆｔアレイ基板の製造方法
JP15486495A JPH095786A (ja) 1995-06-21 1995-06-21 Ｔｆｔアレイ基板並びにこれを用いた液晶表示装置およびｔｆｔアレイ基板の製造方法
JP154864/95 1995-06-21
JP154864/1995 1995-06-21
JP154863/95 1995-06-21
JP154863/1995 1995-06-21

Publications (2)

Publication Number Publication Date
CN1142057A CN1142057A (zh) 1997-02-05
CN1105324C true CN1105324C (zh) 2003-04-09

Family

ID=27316352

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96107917A Expired - Fee Related CN1105324C (zh) 1995-05-30 1996-05-30 薄膜晶体管阵列基板、液晶显示装置和该基板的制造方法

Country Status (3)

Country Link
KR (1) KR100363140B1 (enrdf_load_stackoverflow)
CN (1) CN1105324C (enrdf_load_stackoverflow)
TW (1) TW300341B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1324390C (zh) * 2004-04-28 2007-07-04 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN101313346B (zh) * 2005-11-24 2011-05-04 夏普株式会社 有源矩阵基板、液晶面板、显示装置、电视接收器以及这些基板和面板的修正方法和制造方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471391B1 (ko) * 1997-12-08 2005-06-07 비오이 하이디스 테크놀로지 주식회사 액정 표시 소자
JP3712637B2 (ja) * 2000-08-11 2005-11-02 シャープ株式会社 液晶表示装置およびその欠陥修正方法
JP2002162644A (ja) * 2000-11-27 2002-06-07 Hitachi Ltd 液晶表示装置
WO2004008423A1 (en) * 2002-07-12 2004-01-22 Sharp Kabushiki Kaisha Wiring structure, display apparatus, and active device substrate
JP2004054069A (ja) * 2002-07-23 2004-02-19 Advanced Display Inc 表示装置及び表示装置の断線修復方法
CN100343743C (zh) * 2003-06-24 2007-10-17 统宝光电股份有限公司 液晶显示器的激光修补方法与结构
CN1299324C (zh) * 2003-07-04 2007-02-07 友达光电股份有限公司 一种修补显示器面板上薄膜电晶体线路的方法
JP4011002B2 (ja) * 2003-09-11 2007-11-21 シャープ株式会社 アクティブ基板、表示装置およびその製造方法
CN1324360C (zh) * 2003-10-20 2007-07-04 申丰科技有限公司 免拆背光板的液晶面板亮点修补处理方法
CN1560899B (zh) * 2004-02-16 2010-05-05 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN100442479C (zh) * 2004-04-28 2008-12-10 友达光电股份有限公司 薄膜晶体管阵列基板的修补方法以及薄膜的移除方法
CN1306332C (zh) * 2004-04-29 2007-03-21 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN1306557C (zh) * 2004-07-27 2007-03-21 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN100341155C (zh) * 2004-11-16 2007-10-03 友达光电股份有限公司 象素结构与薄膜晶体管阵列及其修补方法
CN100437223C (zh) * 2005-09-30 2008-11-26 友达光电股份有限公司 显示器、显示器电路的修复结构及其制造方法
CN100454556C (zh) * 2006-07-05 2009-01-21 友达光电股份有限公司 修补结构与主动元件阵列基板
KR100947273B1 (ko) 2006-12-29 2010-03-11 엘지디스플레이 주식회사 횡전계형 액정표시장치용 어레이 기판
KR101041618B1 (ko) 2008-04-24 2011-06-15 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 그 제조방법
CN101285977B (zh) * 2008-05-30 2010-06-02 昆山龙腾光电有限公司 液晶显示装置及其阵列基板
CN101614916B (zh) 2008-06-25 2012-05-30 北京京东方光电科技有限公司 Tft-lcd像素结构和液晶显示器修复断线的方法
CN103149755B (zh) * 2011-12-06 2015-09-16 上海中航光电子有限公司 一种薄膜晶体管液晶显示装置及其修复方法
CN102736341B (zh) * 2012-07-10 2015-08-19 深圳市华星光电技术有限公司 一种液晶显示面板及其修复方法
CN105654886A (zh) * 2016-01-25 2016-06-08 重庆京东方光电科技有限公司 一种栅极驱动电路、其修复方法及显示装置
KR102718044B1 (ko) * 2016-11-09 2024-10-18 엘지디스플레이 주식회사 포토 센서 및 그를 구비하는 표시장치
CN107515500A (zh) * 2017-09-20 2017-12-26 深圳市华星光电技术有限公司 阵列基板、显示面板及像素修补方法
US11735600B2 (en) 2020-05-19 2023-08-22 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Pixel layout and display panel having pixel layout
CN111627925B (zh) * 2020-05-19 2023-10-13 深圳市华星光电半导体显示技术有限公司 像素布局及具有该像素布局的显示面板

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786619B2 (ja) * 1989-04-26 1995-09-20 シャープ株式会社 アクティブマトリクス表示装置
JPH0421823A (ja) * 1990-05-16 1992-01-24 Hosiden Corp 液晶表示素子の点欠陥の黒欠陥化法及び液晶表示素子
JPH04261521A (ja) * 1991-01-21 1992-09-17 Mitsubishi Electric Corp 液晶表示装置及びその表示欠陥修復方法
JP2801104B2 (ja) * 1992-01-29 1998-09-21 シャープ株式会社 アクテイブマトリックス駆動方式散乱型液晶表示装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1324390C (zh) * 2004-04-28 2007-07-04 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN101313346B (zh) * 2005-11-24 2011-05-04 夏普株式会社 有源矩阵基板、液晶面板、显示装置、电视接收器以及这些基板和面板的修正方法和制造方法

Also Published As

Publication number Publication date
KR960042181A (ko) 1996-12-21
TW300341B (enrdf_load_stackoverflow) 1997-03-11
CN1142057A (zh) 1997-02-05
KR100363140B1 (ko) 2003-08-14

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: MITSUBISHI ELECTRIC CO., LTD.

Free format text: FORMER OWNER: CO., LTD. ADVANCED DISPLAY

Effective date: 20080104

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20080104

Address after: Tokyo, Japan, Japan

Patentee after: Missubishi Electric Co., Ltd.

Address before: Xiongben Prefecture, Japan

Patentee before: Advanced Display Inc.

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20030409