CN110503987A - 固态驱动器的电磁屏蔽结构 - Google Patents
固态驱动器的电磁屏蔽结构 Download PDFInfo
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Abstract
固态驱动器的电磁屏蔽结构。公开了SSD的电磁屏蔽结构,特别是这样的SSD的电磁屏蔽结构,即基于采用电连接到形成在PCB中的接地通孔的电磁屏蔽涂层以及形成在PCB内并通过接地通孔电连接到电磁屏蔽涂层的下电磁屏蔽层的电磁屏蔽结构实现封闭屏蔽罐型的电磁屏蔽结构,由此提高电磁屏蔽性能。
Description
技术领域
本公开涉及固态驱动器(solid state drive,SSD)的电磁屏蔽结构,并且更具体地,涉及以下的SSD的电磁屏蔽结构:基于采用电连接到形成在印刷电路板(PCB)中的接地通孔的电磁屏蔽涂层以及形成在PCB内并通过接地通孔电连接到电磁屏蔽涂层的下电磁屏蔽层的电磁屏蔽结构实现封闭屏蔽罐型的电磁屏蔽结构,由此提高电磁屏蔽性能。
背景技术
传统的通用SSD包括:闪存;控制器,该控制器用于控制闪存;电力组件,该电力组件用于控制SSD的各种电力;诸如电阻器、电容器、线圈等这样的无源元件,该无源元件用于使控制器和闪存各自的电力以及逻辑功能稳定;PCB,该PCB上安装有用于存储数据的诸如闪存这样的各种组件;以及连接器,该连接器用于所述SSD的电力连接和数据连接。
在韩国专利公开No.10-2018-0000668中提出的SSD的电磁屏蔽结构涉及用于PCB的顶部部分和侧面部分的电磁屏蔽结构。然而,电磁波对PCB底部部分的影响是不可忽略的,并且从保持性能的角度看,避免外部干扰对底部部分的影响是有利的。因此,不仅PCB的顶部部分和侧面部分需要电磁屏蔽结构,而且底部部分也需要电磁屏蔽结构,以便实现完全封闭的电磁屏蔽结构。换句话说,SSD的传统屏蔽结构不能获得封闭屏蔽罐型的完整电磁屏蔽结构,因此不能保证电磁屏蔽结构的性能和效率。
发明内容
因此,构想出本公开来解决以上问题,并且本公开的一方面是提供固态驱动器(SSD)的电磁屏蔽结构,在该电磁屏蔽结构中,基于采用电连接到形成在印刷电路板(PCB)中的接地通孔的电磁屏蔽涂层以及形成在PCB内并通过接地通孔电连接到电磁屏蔽涂层的下电磁屏蔽层的电磁屏蔽结构来实现封闭屏蔽罐型的电磁屏蔽结构,由此提高电磁屏蔽性能。
按照本公开的实施方式,提供了一种SSD的电磁屏蔽结构,所述SSD包括PCB、安装至所述PCB的多个存储器以及多个有源元件和无源元件,该电磁屏蔽结构包括:成型树脂层,该成型树脂层形成在所述PCB上并且覆盖和包围所述多个存储器、所述控制器以及所述多个有源元件和无源元件;电磁屏蔽涂层,该电磁屏蔽涂层被涂覆在所述成型树脂层的表面上,并且电连接到沿着所述PCB的边缘部分连续形成的接地通孔;以及下电磁屏蔽层,该下电磁屏蔽层形成在所述PCB内并且通过所述接地通孔电连接到所述电磁屏蔽涂层。
附图说明
根据以下结合附图对示例性实施方式的描述,本公开的以上和/或其它方面将变得显而易见并且更容易理解,在附图中:
图1是根据本公开的实施方式的SSD的截面图,图2是图1中示出的SSD的示意性平面图,并且图3是图1中示出的SSD的示意性立体图;
图4是图1中示出的SSD的电磁屏蔽结构中的下电磁屏蔽层的示意性截面图,并且图5是图1中示出的SSD的电磁屏蔽结构中的下电磁屏蔽层的示意性平面图;以及
图6是根据本公开的另一实施方式的SSD的截面图,图7是图6中示出的SSD的示意性平面图,并且图8是图6中示出的SSD的示意性立体图。
[附图标记]
10:PCB 11:接地通孔 12:接地焊盘
30:存储器 31:闪存 32:DDR存储器
33:控制器 34:通信调制解调器芯片 35:无源元件
40:封闭屏蔽罐型的电磁屏蔽结构
50:成型树脂层
70:电磁屏蔽涂层
71:基础电磁屏蔽涂层
73:扩展电磁屏蔽涂层
80:下电磁屏蔽层
81:下屏蔽金属薄膜
83:下屏蔽树脂薄膜
84:下屏蔽开口 85:下屏蔽金属焊盘
90:干扰阻挡器 91:干扰阻挡通孔
100:SSD
具体实施方式
下面,将参照附图详细描述具有以上目的、解决方案和效果的根据本公开的固态驱动器(SSD)的电磁屏蔽结构的实施方式。
参照图1至图5,根据本公开的实施方式的SSD 100的关键点在于包括根据本公开提出的电磁屏蔽结构,并且具体地包括封闭屏蔽罐型的电磁屏蔽结构40。
更详细地,根据本公开的实施方式的SSD 100的特征在于包括图1中示出的封闭屏蔽罐型的电磁屏蔽结构40。为此,涂覆在成型树脂层50上的电磁屏蔽涂层70和形成在PCB10内的下电磁屏蔽层80通过沿着PCB 10的边缘部分形成的接地通孔11电连接,由此形成封闭屏蔽结构。
如图1至图3中所示,根据本公开的实施方式的具有封闭屏蔽罐型的电磁屏蔽结构40的SSD 100包括:PCB 10,该PCB 10上安装有各种电路元件30、31、32、33、35;以及各种电路元件(即,多个存储器30、控制器33和多个有源元件和无源元件35),该各种电路元件安装在PCB 10上。
SSD 100的PCB 10安装有诸如闪存31、双倍数据速率(DDR)存储器32等这样的多个存储器30;控制器33;以及多个有源元件和无源元件35。例如,包括堆叠的多个闪存31和DDR存储器32的多个存储器30安装在PCB 10的顶表面的一侧,而控制器33和无源元件35安装在顶表面的另一侧。当然,无源元件35可以安装在顶表面上的一侧。
根据本公开的SSD 100采用用于形成封闭屏蔽罐型的电磁屏蔽结构40的技术特征。具体地,本公开包括:成型树脂层50,该成型树脂层50形成在PCB 10上,以保持和保护电路元件;电磁屏蔽涂层70,该电磁屏蔽涂层70被涂覆在成型树脂层50的表面上并且使PCB10的顶部部分和侧面部分免受电磁波的影响;以及下电磁屏蔽层80,该下电磁屏蔽层80被布置成在PCB 10内电连接到电磁屏蔽涂层70并且使PCB 10的底部免受电磁波影响,并且本公开将它们相连接,以实现封闭屏蔽罐型的电磁屏蔽结构40。
成型树脂层50由非导电材料制成,并且形成在PCB 10上,以覆盖和包围包括闪存31和DDR存储器32的多个存储器30、控制器33和多个有源元件和无源元件35。
电磁屏蔽涂层70被涂覆在成型树脂层50的表面上,并且电连接到沿着PCB 10的边缘部分连续形成的接地通孔11。具体地,电磁屏蔽涂层70可以电连接到形成在PCB 10上的多个接地通孔11,但是特别地必须形成为电连接到沿着PCB 10的边缘部分形成的接地通孔11。
自然地,将与电磁屏蔽涂层70电连接的接地通孔11填充有导电材料。另外,接地通孔11可以连接到形成在PCB 10内的地线,并且与形成在PCB 10的底部上的接地焊盘12通电连接。最后,电磁屏蔽涂层70通过填充有导电材料的接地通孔11连接到接地焊盘12并保持接地状态,由此执行电磁屏蔽功能。
此外,包括闪存31和DDR存储器32的多个存储器30、控制器33和多个有源元件和无源元件35通过形成在PCB 10内的电路信号线和接口线路彼此电连接并接合,因为它们如上所述被安装在PCB 10上。
另外,PCB 10可以在内部形成有接地通孔11,并且另外形成有用于将接地通孔11彼此连接的地线。在PCB的底部上,接地焊盘12被形成为与接地通孔11通电连接。电磁屏蔽涂层70、接地通孔11和地线通过接地焊盘12电连接,由此形成屏蔽地线。
垂直穿透PCB 10形成的接地通孔11可以形成在各种位置,只要它能与电磁屏蔽涂层70电连接即可。然而,接地通孔11可以包括沿着PCB 10的边缘部分连续形成的接地通孔11,如图2和图3中所示。
封闭屏蔽罐型的电磁屏蔽结构40中的接地通孔11形成在PCB 10的边缘部分中,并且成型树脂层50仅形成在封闭屏蔽罐型的电磁屏蔽结构40中的PCB 10的除了形成有接地通孔11的边缘部分之外的内部部分中。
最后,在PCB 10的边缘部分中形成的封闭屏蔽罐型的电磁屏蔽结构40中的接地通孔11未被成型树脂层50覆盖,而是被暴露于外部。在这种状态下,电磁屏蔽涂层70被涂覆在成型树脂层50的表面上,随后电磁屏蔽涂层70电连接到接地通孔11。
根据本公开,电磁屏蔽涂层70包括:基础电磁屏蔽涂层71,该基础电磁屏蔽涂层71被涂覆在成型树脂层50的顶面和侧面上;以及扩展电磁屏蔽涂层73,该扩展电磁屏蔽涂层73从基础电磁屏蔽涂层71扩展并且被涂覆在PCB 10的边缘部分上。
电磁屏蔽涂层70的基础电磁屏蔽涂层71和扩展电磁屏蔽涂层73通过单个涂覆处理一次形成,并且扩展电磁屏蔽涂层73形成在PCB 10的边缘部分上,以便与封闭屏蔽罐型的电磁屏蔽结构40中的填充有导电材料的接地通孔11交叠。
形成在PCB 10的底部上的外部部分处的接地焊盘12连续地形成在PCB 10的边缘部分中,并且通过封闭屏蔽罐型的电磁屏蔽结构40中的接地通孔11与形成在PCB 10的顶部上的电磁屏蔽涂层73通电连接。接地焊盘12被设置为连接盘网格阵列(land grid array,LGA)或球栅阵列(ball grid array,BGA)形式的输入/输出接口引脚,使得根据本公开的SSD最终可以被安装至系统板。
为了实现封闭屏蔽罐型的电磁屏蔽结构40,本公开包括下电磁屏蔽层80,下电磁屏蔽层80形成在PCB 10内,并且通过封闭屏蔽罐型的电磁屏蔽结构40中的接地通孔11(即,沿着PCB 10的边缘形成的接地通孔)电连接到电磁屏蔽涂层70。
下电磁屏蔽层80没有附接到PCB 10的底部,而是形成在PCB 10内的整个表面上,从而保护其自身。像这样,下电磁屏蔽层80形成在PCB 10的整个内表面上,因此在保持抵抗外部冲击(震动、水、热等)的基础保护的同时,向PCB 10的底部施用电磁屏蔽,由此实现封闭屏蔽罐型的电磁屏蔽结构40。
下电磁屏蔽层80必须被形成为电接触封闭屏蔽罐型的电磁屏蔽结构40中的接地通孔11(即,沿着PCB 10的边缘连续形成的接地通孔11),并且通过封闭屏蔽罐型的电磁屏蔽结构40中的接地通孔11电连接到电磁屏蔽涂层70,由此完成封闭屏蔽罐型的电磁屏蔽结构40。
这样,用于实现封闭屏蔽罐型的电磁屏蔽结构40的下电磁屏蔽层80因为其形成在PCB 10内而基本上受到保护,但是可以自主地被保护而免受外部环境影响,并且还具有通过其自身配置与接地通孔11稳定接触的结构。
在图4和图5中例示了用于此目的的下电磁屏蔽层80。图4是根据本公开的下电磁屏蔽层80的示意性截面图,并且图5是根据本公开的下电磁屏蔽层80的示意性平面图。
此外,图4的(a)中示出下电磁屏蔽层80的示意性截面图,其中,多个下屏蔽金属焊盘85仅形成在下屏蔽金属薄膜81的顶表面上,并且图4的(b)示出下电磁屏蔽层80的示意性截面图,其中,多个下屏蔽金属焊盘85形成在下屏蔽金属薄膜81的顶表面和底表面二者上。另外,图5示出形成有下屏蔽开口84的下屏蔽树脂薄膜83被涂覆在下屏蔽金属薄膜81(稍后将描述)上,其中,一些下屏蔽开口84被填充有下屏蔽金属焊盘85,而其它下屏蔽开口84未被填充有下屏蔽金属焊盘,因此使下屏蔽金属薄膜81通过其暴露。
如图4和图5中所示,根据本公开的实施方式的下电磁屏蔽层80基本上包括:下屏蔽金属薄膜81;下屏蔽树脂薄膜83,该下屏蔽树脂薄膜83被涂覆在下屏蔽金属薄膜81的顶表面和底表面中的至少一个上并且形成有多个下屏蔽开口84;以及多个下屏蔽金属焊盘85,该多个下屏蔽金属焊盘85被填充和涂覆在多个下屏蔽开口84中并且与下屏蔽金属薄膜81接触。
具体地,根据本公开的实施方式的下电磁屏蔽层80包括下屏蔽金属薄膜81,下屏蔽金属薄膜81形成在PCB 10内的整个表面上并且成形为板状。下屏蔽金属薄膜81在PCB 10的整个表面上形成为板状,以便具有与PCB 10的面积相同的面积。
如果下电磁屏蔽层80只包括下屏蔽金属薄膜81,则下屏蔽金属薄膜81具有因外部冲击而损坏或劣化的问题,因为它可能被暴露于湿气或水并被湿气或水渗透以及暴露于其自身产生的热或被传递的热。在这种情况下,存在的不足是,封闭屏蔽罐型的电磁屏蔽结构40所具有的性能逐渐劣化。
为了解决这些问题和不足,根据本公开的下电磁屏蔽层80包括被形成为涂覆在下屏蔽金属薄膜81上的下屏蔽树脂薄膜83。此外,下屏蔽金属薄膜81必须与封闭屏蔽罐型的电磁屏蔽结构40中的接地通孔11电连接。为此,下屏蔽树脂薄膜83被涂覆在下屏蔽金属薄膜81的表面上,同时使下屏蔽金属薄膜81部分地暴露。
具体地,根据本公开的下电磁屏蔽层80包括下屏蔽树脂薄膜83,下屏蔽树脂薄膜83被涂覆在下屏蔽金属薄膜81上并且形成有多个下屏蔽开口84,这多个下屏蔽开口84彼此间隔开,以暴露下屏蔽金属薄膜81。也就是说,具有多个下屏蔽开口84的下屏蔽树脂薄膜83被涂覆在下屏蔽金属薄膜81上,并且多个下屏蔽开口84被排列成彼此留出预定的间隔。
多个下屏蔽开口84被填充有下屏蔽金属焊盘85,以与下屏蔽金属薄膜81电接触。换句话说,根据本公开的下电磁屏蔽层80包括分别填充在多个下屏蔽开口84中并且形成为与下屏蔽金属薄膜81接触的多个下屏蔽金属焊盘85。
最后,下屏蔽金属焊盘85的底部与下屏蔽金属薄膜81接触。如上形成的下屏蔽金属焊盘85的顶部与接地通孔11接触并且电连接到接地通孔11。特别地,下屏蔽金属焊盘85沿着PCB 10的边缘形成并且与封闭屏蔽罐型的电磁屏蔽结构40中的接地通孔11电接触和电连接。此外,下屏蔽金属薄膜81的底部被完全暴露于外部,因此在下侧连接到接地通孔11时连接到接地焊盘12。
此外,多个下屏蔽金属焊盘85可以被形成为各自具有一致尺寸并且排列成彼此等距间隔开。最后,多个下屏蔽开口84还被形成为各自具有一致尺寸并且排列成彼此等距间隔开。即使SSD的大小或标准有改变,也将下屏蔽金属焊盘85的尺寸确定为保证与接地通孔11稳定地接触和电连接。此外,需要将多个下屏蔽金属焊盘85排列成彼此间留出相同的距离。为此,每个下屏蔽金属焊盘85可以具有33μm的宽度和33μm的长度,并且相邻的下屏蔽金属焊盘85之间的距离可以是16μm。
在图4的(a)中示出的下电磁屏蔽层80中,下屏蔽金属薄膜81的底部被完全暴露,因此仍受外部冲击和环境状况(湿度、湿气、水、热等)的影响。
因此,如图4的(b)中所示,根据本公开的下电磁屏蔽层80包括下屏蔽树脂薄膜83,下屏蔽树脂薄膜83被涂覆在下屏蔽金属薄膜81上(特别是,在下屏蔽金属薄膜81的顶表面和底表面上),并且形成有多个下屏蔽开口84,下屏蔽金属薄膜81通过下屏蔽开口84以预定间隔暴露。这里,多个下屏蔽开口84以相同的间隔排列成彼此间隔开。
在这种情况下,下屏蔽树脂薄膜83被涂覆在下屏蔽金属薄膜81的两个表面(即,顶表面和底表面)上,并且包括以相同间隔排列的下屏蔽开口84。即使在这种情况下,如图4的(b)中所示,根据本公开的下电磁屏蔽层80包括分别填充在多个下屏蔽开口84中并且与下屏蔽金属薄膜81接触的多个下屏蔽金属焊盘85。这里,多个下屏蔽金属焊盘85被形成为填充在形成在下屏蔽金属薄膜81的顶表面和底表面上的下屏蔽开口84中。
最后,多个下屏蔽金属焊盘85与下屏蔽金属薄膜81的顶表面和底表面处的下屏蔽金属薄膜81接触和电连接。因此,被形成为与下屏蔽金属薄膜81的顶表面接触的下屏蔽金属焊盘85与接地通孔11上部接触和连接并且电连接到电磁屏蔽涂层70,并且被形成为与下屏蔽金属薄膜81的底表面接触的下屏蔽金属焊盘85与接地通孔11下部接触和连接并且电连接到接地焊盘12。
像这样,如图4的(b)中所示,下屏蔽树脂薄膜83被涂覆在屏蔽金属薄膜81的顶表面和底表面上,由此与图4的(a)中的屏蔽金属薄膜81的保护和性能相比,使屏蔽金属薄膜81的保护和性能最大化。此外,在这种情况下应用的多个下屏蔽金属焊盘85具有与参照图4的(a)描述的尺寸和间隔相同的尺寸和间隔。
在根据本公开的SSD中,用于基于Wi-Fi、长期演进(LTE)、Bluetooth(蓝牙)等进行通信的通信调制解调器芯片34可以被另外安装至PCB 10,如图6中所示。包括堆叠的多个闪存31和DDR存储器32的多个存储器30、控制器33、多个有源元件和无源元件35以及通信调制解调器芯片34可以交换热干扰或电磁干扰,因为它们被布置在PCB 10上。
根据本公开,控制器33被安装在PCB 10的顶表面上的一侧,通信调制解调器芯片34被安装在另一侧,并且形成干扰阻挡器90以阻挡控制器33和通信调制解调器芯片34之间的电磁干扰。
具体地,如图6至图8中所示,根据本公开的实施方式的SSD 100包括另外安装至PCB 10的通信调制解调器芯片34,并且还包括干扰阻挡器90,干扰阻挡器90被形成为穿透成型树脂层50,从而将PCB 10的顶表面在空间上划分成一侧和另一侧,并且阻挡通信调制解调器芯片34与控制器33之间的电磁干扰。
干扰阻挡器90可以具有各种结构,只要它可以将安装有控制器33的区域(即,第一区域)与安装有通信调制解调器芯片34的区域(即,第二区域)电隔离以便阻挡通信调制解调器芯片34与控制器33之间的电磁干扰即可。
因为电磁屏蔽涂层70通过接地通孔11电连接到下电磁屏蔽层80和接地焊盘12,所以电连接到电磁屏蔽涂层70的干扰阻挡器90也电连接到电磁屏蔽涂层70和下电磁屏蔽层80,并且还通过接地通孔11连接到接地焊盘12,由此执行封闭屏蔽罐型的电磁屏蔽功能。
如上所述,干扰阻挡器90可以包括由金属板或涂覆有导电材料的塑料板制成的分割板。另选地,如图7和图8中所示,干扰阻挡器90可以包括穿透成型树脂层50形成的干扰阻挡通孔91。干扰阻挡通孔91垂直穿透成型树脂层50连续地形成,从而电隔离(electricallydivide)第一区域和第二区域。当然,填充有导电材料的干扰阻挡通孔91可以电连接到形成在PCB 10中并且通过PCB 10内形成的下电磁屏蔽层80连接到接地焊盘12的单独的接地通孔。
除了包括填充有导电材料的干扰阻挡通孔91的干扰阻挡器90之外,图6至图8中示出的根据本公开的实施方式的SSD 100与图1至图5中示出的前述SSD相同,因此将不再对其进行重复描述。
用针对技术问题和解决方案的根据本公开的SSD的电磁屏蔽结构,基于采用电连接到形成在PCB中的接地通孔的电磁屏蔽涂层以及形成在PCB内并通过接地通孔电连接到电磁屏蔽涂层的下电磁屏蔽层的电磁屏蔽结构实现封闭屏蔽罐型的电磁屏蔽结构,由此提高电磁屏蔽性能。
尽管已经描述了本公开的实施方式,但是这些仅用于例示目的,并且本领域的普通技术人员将了解,可以在这些实施方式中形成各种改变形式及其等同物。因此,在所附权利要求书中限定本公开的范围。
Claims (2)
1.一种固态驱动器SSD的电磁屏蔽结构,所述SSD包括印刷电路板PCB、控制器、多个有源元件和无源元件以及安装至所述PCB的多个存储器,该电磁屏蔽结构包括:
成型树脂层,该成型树脂层形成在所述PCB上并且覆盖和包围所述多个存储器、所述控制器以及所述多个有源元件和无源元件;
电磁屏蔽涂层,该电磁屏蔽涂层被涂覆在所述成型树脂层的表面上,并且电连接到沿着所述PCB的边缘部分连续形成的接地通孔;以及
下电磁屏蔽层,该下电磁屏蔽层形成在所述PCB内并且通过所述接地通孔电连接到所述电磁屏蔽涂层。
2.根据权利要求1所述的SSD的电磁屏蔽结构,其中,所述下电磁屏蔽层包括下屏蔽金属薄膜、下屏蔽树脂薄膜以及下屏蔽金属焊盘;所述下屏蔽金属薄膜形成在所述PCB内的整个表面上并且成形为板状;所述下屏蔽树脂薄膜被涂覆在所述下屏蔽金属薄膜的顶表面和底表面上并且形成有多个下屏蔽开口,所述多个下屏蔽开口彼此等距间隔开,使所述下屏蔽金属薄膜暴露;所述下屏蔽金属焊盘被填充在所述多个下屏蔽开口中的每个下屏蔽开口中并且被形成为与所述下屏蔽金属薄膜接触。
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KR102553021B1 (ko) * | 2018-12-18 | 2023-07-07 | 삼성전자주식회사 | 전자장치 하우징 및 이를 구비하는 전자 시스템 |
CN110611988A (zh) * | 2019-09-18 | 2019-12-24 | 合肥宝龙达信息技术有限公司 | 一种pcb内部屏蔽结构 |
KR102460079B1 (ko) * | 2021-04-01 | 2022-10-28 | (주)메가일렉트로닉스 | 솔리드 스테이트 드라이브의 미디어 서버 모듈 |
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US20190357347A1 (en) | 2019-11-21 |
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US10667382B2 (en) | 2020-05-26 |
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