CN110330970B - 一种红光及近红外发光材料、制备方法及发光器件 - Google Patents

一种红光及近红外发光材料、制备方法及发光器件 Download PDF

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CN110330970B
CN110330970B CN201910614524.2A CN201910614524A CN110330970B CN 110330970 B CN110330970 B CN 110330970B CN 201910614524 A CN201910614524 A CN 201910614524A CN 110330970 B CN110330970 B CN 110330970B
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luminescent material
red
infrared
light
equal
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CN110330970A (zh
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陈晓霞
刘元红
刘荣辉
薛原
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Grirem Advanced Materials Co Ltd
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/67Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C09K11/68Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/62Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
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    • C01G15/00Compounds of gallium, indium or thallium
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    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7776Vanadates; Chromates; Molybdates; Tungstates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
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    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Organic Chemistry (AREA)
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  • Luminescent Compositions (AREA)
CN201910614524.2A 2019-03-06 2019-07-09 一种红光及近红外发光材料、制备方法及发光器件 Active CN110330970B (zh)

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US17/254,224 US11932790B2 (en) 2019-03-06 2019-07-09 Red light and near-infrared light-emitting material, preparation method thereof and light-emitting device

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CN201910169021 2019-03-06

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US (1) US11932790B2 (ko)
EP (1) EP3795654B1 (ko)
JP (1) JP7073542B2 (ko)
KR (1) KR102580962B1 (ko)
CN (1) CN110330970B (ko)
WO (1) WO2020177257A1 (ko)

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CN112831321A (zh) * 2019-11-22 2021-05-25 亿光电子工业股份有限公司 荧光材料及光电子器件
CN111739988B (zh) * 2020-06-29 2021-11-12 山东大学 一种垂直结构宽带近红外led及制备方法
JP7491811B2 (ja) * 2020-10-28 2024-05-28 株式会社日立ハイテク 蛍光体、それを用いた光源、生化学分析装置、及び蛍光体の製造方法
CN113004896B (zh) * 2021-03-10 2023-04-07 江西离子型稀土工程技术研究有限公司 一种近红外发光材料、制备方法以及一种发光装置
CN114806564B (zh) * 2022-03-18 2024-01-12 佛山科学技术学院 三价铬离子掺杂氟锑酸盐近红外荧光材料、制备方法及其led光源
CN116161949B (zh) * 2022-12-30 2024-04-16 岭南现代农业科学与技术广东省实验室茂名分中心 一种Ga2O3:Cr3+掺杂近红外陶瓷发光材料的制备方法及其应用
CN117701277A (zh) * 2023-12-07 2024-03-15 东莞市立德达光电科技有限公司 宽带远红光荧光粉及其制备方法与应用

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JP4860368B2 (ja) * 2006-06-27 2012-01-25 富士フイルム株式会社 ガーネット型化合物とその製造方法
JP5521412B2 (ja) * 2008-07-31 2014-06-11 日立金属株式会社 蛍光材料およびそれを用いたシンチレータ並びに放射線検出器
EP2480626A4 (en) 2009-09-21 2013-04-03 Univ Georgia NEAR-FROSTED PHOSPHERE WITH AN ALKALI GALLAT MATRIX
CN102127813B (zh) * 2010-12-27 2013-03-20 中国科学院安徽光学精密机械研究所 高效中红外Pr,Er:YSGG激光晶体及其制备方法
CN102618928B (zh) 2012-02-16 2014-11-26 中国科学院合肥物质科学研究院 一种高效中红外激光晶体及其制备方法
JP2013227481A (ja) * 2012-03-30 2013-11-07 Covalent Materials Corp セラミックス複合体
CN102618929B (zh) 2012-04-18 2015-04-08 北京雷生强式科技有限责任公司 一种掺镱、铒的钇钪镓石榴石晶体及其制备方法
CN103571473B (zh) 2012-07-25 2015-09-23 有研稀土新材料股份有限公司 一种发光装置及所含红色荧光体
JP6329083B2 (ja) * 2012-12-28 2018-05-23 シャープ株式会社 発光装置
CN103160278A (zh) * 2013-03-20 2013-06-19 广东工业大学 一种红色长余辉发光材料及其制备方法
CN103911147A (zh) * 2014-01-13 2014-07-09 广东工业大学 一种近红外长余辉荧光粉及其制备方法
CN106833627A (zh) 2016-12-19 2017-06-13 中国科学院宁波材料技术与工程研究所 一种发光材料、其制备方法及应用
EP3688821A1 (en) * 2017-09-28 2020-08-05 Lumileds Holding B.V. Wavelength converting material for a light emitting device
CN107674673B (zh) * 2017-10-18 2020-08-21 喀什大学 一种发射波长调控的长余辉纳米晶的制备方法
CN108148593A (zh) * 2018-01-29 2018-06-12 东南大学 一种用于近红外led的荧光粉材料及其制备方法
CN108998026A (zh) * 2018-02-12 2018-12-14 有研稀土新材料股份有限公司 一种近红外发光材料及由该材料制备的发光装置
CN108865139B (zh) * 2018-09-13 2020-06-23 厦门大学 一种宽谱带发射近红外发光物质及包含该物质的发光器件

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EP3795654B1 (en) 2022-10-12
WO2020177257A1 (zh) 2020-09-10
KR102580962B1 (ko) 2023-09-19
CN110330970A (zh) 2019-10-15
EP3795654A4 (en) 2021-08-25
JP2021529240A (ja) 2021-10-28
JP7073542B2 (ja) 2022-05-23
KR20210013219A (ko) 2021-02-03
EP3795654A1 (en) 2021-03-24
US20210388262A1 (en) 2021-12-16
US11932790B2 (en) 2024-03-19

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