WO2020177257A1 - 一种红光及近红外发光材料、制备方法及发光器件 - Google Patents

一种红光及近红外发光材料、制备方法及发光器件 Download PDF

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WO2020177257A1
WO2020177257A1 PCT/CN2019/095238 CN2019095238W WO2020177257A1 WO 2020177257 A1 WO2020177257 A1 WO 2020177257A1 CN 2019095238 W CN2019095238 W CN 2019095238W WO 2020177257 A1 WO2020177257 A1 WO 2020177257A1
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light
red
infrared
emitting
luminescent material
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French (fr)
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陈晓霞
刘元红
刘荣辉
薛原
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有研稀土新材料股份有限公司
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Priority to KR1020207037507A priority Critical patent/KR102580962B1/ko
Priority to US17/254,224 priority patent/US11932790B2/en
Priority to JP2020572811A priority patent/JP7073542B2/ja
Priority to EP19917562.1A priority patent/EP3795654B1/en
Publication of WO2020177257A1 publication Critical patent/WO2020177257A1/zh

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    • C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C09K11/68—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
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  • the invention relates to the field of luminescent materials, in particular to a red and near-infrared luminescent material, a preparation method and a light-emitting device.
  • the application of near-infrared light in the fields of security monitoring, biometrics, 3D sensing, and food/medical testing has become a focus at home and abroad.
  • the broad spectrum of 650nm ⁇ 1050nm covers the frequency doubling and combining characteristic information of hydrogen-containing groups (O-H, N-H, C-H) vibration.
  • the characteristic information of the hydrogen-containing groups of organic molecules in the sample can be obtained, which can be widely used in the field of food detection.
  • Broad spectrum or multi-spectrum of 850-1000nm and 1400-1700nm can be applied to the fields of medical detection, biometric identification and security monitoring.
  • the patent "Near infrared doped phosphors having an alkaline gallate matrix” discloses that the composition is LiGaO 2 : 0.001Cr 3+ , 0.001Ni 2+ , which can produce near-infrared luminescence between 1000nm and 1500nm under ultraviolet light excitation.
  • the spectral range is narrow, the luminous intensity is low, and the phosphor has a long afterglow effect, and the luminous time lasts for several minutes, which is not suitable for light-emitting devices.
  • the problem to be solved by the present invention is the deficiencies of the above-mentioned luminescent materials.
  • One of its objectives is to obtain a red and near-infrared luminescent material and a preparation method thereof. Compared with the existing red and near-infrared luminescent materials, the material has It can be excited by a spectrum with a rich wavelength range (ultraviolet or violet light or blue light) to produce 650nm ⁇ 1700nm broad spectrum or multiple spectrum light.
  • another object of the present invention is to provide a device that uses a single excitation light source and uses the luminescent material of the present invention to generate red light and near-infrared light in the range of 650 nm to 1700 nm.
  • the present invention proposes a red light and near-infrared light-emitting material, a preparation method thereof, and a light-emitting device containing the material.
  • a first aspect the present invention provides a red and near-infrared light emitting material, the emissive material comprises the formula aSc 2 O 3. Ga 2 O 3. Compound bR 2 O 3, wherein said R element comprising Cr, Ni One or two of, Fe, Yb, Nd or Er elements, 0.001 ⁇ a ⁇ 0.6, 0.001 ⁇ b ⁇ 0.1.
  • the compound has the same crystal structure as ⁇ -Ga 2 O 3 .
  • the R element includes Cr.
  • the R element is Cr.
  • the R element also includes one or two of Ce, Eu, Tb, Bi, Dy, and Pr.
  • the second aspect of the present invention provides a method for preparing the aforementioned red light and near-infrared luminescent materials, including the following steps:
  • the sample is ball milled, washed with water and sieved to obtain the red and near-infrared luminescent materials.
  • the third aspect of the present invention provides a light emitting device, which includes at least an excitation light source and a light emitting material, and the light emitting material at least includes the red light and near-infrared light emitting materials as described above.
  • the peak wavelength range of the excitation light source is 250-320nm, 400-500nm and 550-700nm.
  • the emission peak wavelength range of the excitation light source is 440-470 nm.
  • the present invention provides a material and a light-emitting device that can generate red light and near-infrared light with high intensity and broad spectrum or multiple spectra.
  • the luminescent material can be excited by ultraviolet, blue and red light sources to generate a broad spectrum or multiple spectra.
  • the luminescent material can be excited by a mature blue light source to produce high-intensity broad spectrum or multiple spectrum luminescence, which has higher luminous intensity than existing materials.
  • Fig. 1 is an XRD diffraction pattern of the luminescent material obtained in Example 1 of the present invention
  • Example 2 is an excitation emission spectrum diagram of the luminescent material obtained in Example 1 of the present invention.
  • Fig. 3 is an excitation emission spectrum diagram of the luminescent material obtained in Example 2 of the present invention.
  • a first aspect the present invention provides a red and near-infrared light emitting material, the emissive material comprises the formula aSc 2 O 3. Ga 2 O 3. Compound bR 2 O 3, wherein said R element comprising Cr, Ni One or two of, Fe, Yb, Nd or Er elements, 0.001 ⁇ a ⁇ 0.6, 0.001 ⁇ b ⁇ 0.1.
  • said aSc 2 O 3. 2 O 3 Compound bR 2 O 3, Ga has the same ⁇ -Ga 2 O 3 crystal structure. Ga 2 O 3 has five allotropes ⁇ , ⁇ , and ⁇ . Among them, ⁇ -Ga 2 O 3 is the most stable. It has a monoclinic crystal structure and is chemically stable and easy to dope with cations. . In the present invention, ⁇ -Ga 2 O 3 can realize red light and near-infrared light emission by introducing transition metal or rare earth metal ions. In addition, the tunable and controllable spectrum can be achieved through the substitution of other elements of the same group.
  • a and b further have a value range: 0.15 ⁇ a ⁇ 0.35, 0.02 ⁇ b ⁇ 0.05.
  • the red and near-infrared luminescent material of the present invention is characterized in that ⁇ -Ga 2 O 3 is doped with Sc element, which has a larger atomic radius and replaces Ga cations, which expands the lattice of ⁇ -Ga 2 O 3 and emits central ion and anions O bond length becomes long, thereby promoting crystal field strength weakens or crystal field splitting, Cr ions to achieve broadband or multi-spectral emission, and with the increase of the content of Sc ions, to achieve long-wave spectral movement, when Sc 2 O When the content of 3 is 0.15 ⁇ a ⁇ 0.35, the luminescent material of the present invention has a ⁇ -Ga 2 O 3 structure and has a higher luminous intensity.
  • the luminous intensity When a is less than 0.15, the luminous intensity is slightly lower, and when a exceeds 0.35, impurities may be generated. phase.
  • the R element in R 2 O 3 is used as the luminous center.
  • the composition is 0.02 ⁇ b ⁇ 0.05, the luminescent material of the present invention has the best luminous intensity.
  • b ⁇ 0.02 because there are too few luminous centers, the luminous intensity is low, when b> 0.05, too high a concentration of the luminescent center will cause concentration quenching, which will also reduce the luminous intensity.
  • the R element includes Cr.
  • the R element is Cr.
  • the transition metal ion Cr 3+ has a radius similar to that of Ga 3+ , and is easily doped into the twisted octahedral structure of Ga 3+ , and the energy level of Cr 3+ can decrease as the crystal field strength becomes weaker. , Can realize the long-wave shift of the spectrum and obtain the broad peak emission, thereby producing near-infrared broad spectrum luminescence.
  • the red light and near-infrared light-emitting materials also include one or two of Ce, Eu, Tb, Bi, Dy, and Pr.
  • the introduction of one or two of the elements Ce, Eu, Tb, Bi, Dy, and Pr can cause the energy transfer of this type of element to the central element R to obtain stronger red light and near-infrared light.
  • the second aspect of the present invention provides a method for preparing the above-mentioned red light and near-infrared luminescent material, which includes the following steps:
  • the sample is ball milled, washed with water and sieved to obtain the red and near-infrared luminescent materials.
  • the third aspect of the present invention provides a light-emitting device, which can be made into a light-emitting device using the aforementioned red light and near-infrared light-emitting materials in combination with an excitation light source.
  • the excitation light source has a peak wavelength range of 250-320nm, 400-500nm, 550-700nm, preferably 440-470nm.
  • the stoichiometric ratio of the chemical formula Sc 0.98 BO 3 :0.02Cr accurately weigh Sc 2 O 3 , H 3 BO 3 and Cr 2 O 3 and mix them uniformly to obtain a mixture; the obtained mixture is calcined at 1300°C for 8 hours in an air atmosphere, The calcined product is obtained after cooling; the obtained calcined product is subjected to post-processing such as sieving and water washing to obtain a near-infrared luminescent material sample.
  • the obtained near-infrared luminescent material sample was subjected to a 460nm excitation test, and it was obtained that the emission peak of the comparative example was located at 810nm, the half-value width was 133nm, and the relative luminescence intensity was set to 100.
  • Example 1 11-0370 ⁇ -Ga 2 O 3 , except for the overall diffraction The peak shifted slightly to a small angle, indicating that the structure of Example 1 was ⁇ -Ga 2 O 3 structure.
  • the introduction of Sc element resulted in a ⁇ -Ga 2 O 3 Sc-doped solid solution, and its crystal lattice expanded. The surface spacing increases.
  • the luminescent material obtained in Example 1 was analyzed by a fluorescence spectrometer, and the luminescence spectrum was obtained by excitation at blue light at 460nm.
  • the material has broad-spectrum luminescence of red light and near-infrared spectrum under blue light excitation, reaching 650nm ⁇ 1050nm, and its peak The wavelength is 798nm, the half-peak width is 141nm, and the excitation spectrum is obtained by monitoring its 798nm emission, as shown in Figure 2. It can be seen that the luminescent material can be effectively excited by ultraviolet, violet, blue and red light, emitting a broad spectrum of red light and near-infrared light. Its relative luminous intensity is 309.
  • the luminescent material obtained in Example 2 was analyzed by a fluorescence spectrometer, and the luminescence spectrum was obtained by excitation at 460nm of blue light.
  • the material has broad-spectrum luminescence of red light and near-infrared spectrum under blue light excitation, reaching 650nm ⁇ 900nm, and its peak The wavelength is 734nm and the half-peak width is 121nm. Monitor the 734nm luminescence to obtain the excitation spectrum, as shown in Figure 3. It can be seen that the luminescent material can be effectively excited by ultraviolet, violet, blue and red light, emitting a broad spectrum of red light and near-infrared light. Its relative luminous intensity is 245.
  • the luminescent material obtained in Example 3 was analyzed by a fluorescence spectrometer, and the luminescence spectrum was obtained by excitation at 460nm of blue light.
  • the material has broad-spectrum luminescence of red light and near-infrared spectrum under blue light excitation, reaching 700nm ⁇ 1050nm, and its peak The wavelength is 830nm, the half-peak width is 143nm, and its relative luminous intensity is 258.
  • the compound composition formulas are listed in Table 1 below.
  • the preparation method of the materials in each embodiment is the same as that in Example 1, and only needs to be based on the target in each embodiment.
  • the chemical formula composition of the compound select the appropriate amount of the compound, mix, grind, and select appropriate firing conditions to obtain the required near-infrared luminescent material.
  • the luminescent material of the present invention has the characteristics of broad-spectrum emission or multi-spectrum emission of red light and near-infrared light under blue excitation. Compared with the existing near-infrared luminescent materials, the comparative example is used for comparison. The invented red and near-infrared luminescent materials have higher luminous intensity.
  • the present invention provides a near-infrared and red light emitting material and its preparation method, and a light emitting device comprising the light emitting material, the red and near-infrared light emitting material comprising the formula aSc 2 O 3. Ga 2 O 3. compound bR 2 O 3, wherein R comprises one or two elements of Cr, Ni, Fe, Yb, Nd or Er elements, 0.001 ⁇ a ⁇ 0.6,0.001 ⁇ b ⁇ 0.1.
  • the luminescent material can be excited by a spectrum with a rich wavelength range (ultraviolet or violet light or blue light) to produce 650nm-1700nm broad spectrum or multiple spectrum luminescence, and has higher luminous intensity.

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Abstract

一种红光及近红外发光材料及其制备方法、以及包含该发光材料的发光器件，该红光及近红外发光材料包含分子式为aSc2O3·Ga2O3·bR2O3的化合物，其中R元素包括Cr、Ni、Fe、Yb、Nd或Er元素中的一种或者两种，0.001≤a≤0.6，0.001≤b≤0.1。该发光材料具有可被波长范围丰富(紫外或紫光或蓝光)的光谱激发而产生650nm～1700nm宽谱或者多个光谱发光，且具有较高的发光强度。

Description

一种红光及近红外发光材料、制备方法及发光器件 技术领域
本发明涉及发光材料领域，具体而言，涉及一种红光及近红外发光材料、制备方法及发光器件。
背景技术
近年来，近红外光在安防监控、生物识别、3D感测、食品/医疗检测领域的应用成为国内外焦点。尤其是650nm～1050nm的宽谱覆盖了含氢基团(O-H、N-H、C-H)振动的倍频与合频特征信息。通过扫描样品的近红外宽谱，可以得到样品中有机分子含氢基团的特征信息，可广泛用于食品检测领域。850-1000nm以及1400-1700nm的宽谱或者多谱可应用于医疗检测、生物识别以及安防监控领域。
自2016年欧司朗全球首次推出蓝光芯片复合近红外荧光粉实现650-1050nm宽谱近红外光源用于食品检测领域，荧光转换型近红外技术得到飞速发展，近红外发光材料成为研究热点。就红光及近红外发光材料而言，目前有公开报道如《LaAlO 3:Mn 4+as Near-Infrared Emitting Persistent Luminescence Phosphor for Medical Imaging:A Charge Compensation Study》(Materials 2017，10，1422)一文中公开了一种化学成分为LaAlO 3:Mn 4+的荧光粉，在紫外光的激发下，可产生从600nm～800nm之间的红光发光，发光光谱范围偏窄且不能被蓝光激发。专利《Near infrared doped phosphors having an alkaline gallate matrix》(EP2480626A2)公开了成分为LiGaO 2:0.001Cr 3+，0.001Ni 2+，在紫外光激发下可产生1000nm～1500nm之间的近红外发光，发光光谱范围偏窄,发光强度低，且该荧光粉有长余辉效果， 发光时间持续数分钟，不适合做发光器件。《稀土离子掺杂CaWO 4荧光粉的近红外量子剪裁研究》(太原理工大学硕士论文，李云青，2015年)公开了一种化学成分为CaWO 4:1％Yb 3+的荧光粉，在紫外光的激发下，可产生900nm～1100nm的近红外发光，发光光谱范围偏窄且不能被蓝光激发同时发光强度偏低。《Ca 3Sc 2Si 3O 12:Ce 3+，Nd 3+近红外荧光粉的制备和发光性质》(硅酸盐学报，2010年第38卷第10期)中认为，在蓝光激发下，荧光粉Ca 3Sc 2Si 3O 12:Ce 3+，Nd 3+可产生800nm～1100nm之间的近红外发光，发光强度偏低。
总而言之，从现有的公开专利或非专利文献中可以看出，1、尚缺乏可被紫外、蓝光、红光光源激发尤其是技术成熟的蓝光光源激发产生高强度宽谱或者多谱发生的红光及近红外发光的材料。2、尚缺乏基于单一激发光源、封装形式简单的可产生宽谱或者多谱红光及近红外发光的器件。因此非常有必要研发一种能被多种光源/波段尤其是蓝光激发、具有较高发光强度的能产生宽谱或者多个光谱的红光及近红外光发光的材料，且用该材料制作出一种的器件，应用于近红外探测技术，服务于安防监控、生物识别、3D感测、食品/医疗检测领域。
发明内容
(一)发明目的
本发明要解决的问题即上述发光材料的不足，其目的之一是获得一种红光及近红外发光材料及其制备方法，该材料与现有的红光及近红外发光材料相比，具有可被波长范围丰富(紫外或紫光或蓝光)的光谱激发而产生650nm～1700nm宽谱或者多个光谱发光。进而，本发明的另外一个目的是提供一种使用单一激发光源，使用本发明的发光材料能产生650nm～1700nm范围的红光及近红外发光的器件。为达上述目的，本发明提出一种具有红光及近红外发光材料及其制备方法、以及包含该材料的发光器件。
(二)技术方案
本发明的第一方面提供了一种红光及近红外发光材料，该发光材料包含 分子式为aSc 2O 3 .Ga 2O 3 .bR 2O 3的化合物，其中所述R元素包括Cr、Ni、Fe、Yb、Nd或Er元素中的一种或者两种，0.001≤a≤0.6，0.001≤b≤0.1。
进一步的，所述化合物具有与β-Ga 2O 3相同的晶体结构。
进一步的，0.15≤a≤0.35,0.02≤b≤0.05。
进一步的，R元素包括Cr。
进一步的，R元素为Cr。
进一步的，R元素还包括Ce、Eu、Tb、Bi、Dy、Pr的一种或者两种。
本发明第二方面提供了一种根据前述的红光及近红外发光材料的制备方法，包括如下步骤：
按分子式的化学计量比，称量原料Sc 2O 3、Ga 2O 3和R 2O 3；
将上述原料研磨混匀后装入坩埚，在空气或者氮气保护气氛下，在温度为1200-1600℃的高温炉内烧结2-10小时；
随炉冷却到室温，得到烧结后的样品；
所述样品经过球磨、水洗和筛分，得到所述红光和近红外发光材料。
本发明的第三方面提供了一种发光器件，至少包含激发光源和发光材料，所述发光材料至少包括如前所述的红光及近红外发光材料。
进一步的，激发光源发光峰值波长范围为250-320nm，400-500nm和550-700nm。
进一步的，所述激发光源发光峰值波长范围为440-470nm。
(三)有益效果
本发明的上述技术方案具有如下有益的技术效果：
1、本发明提供了一种可产生高强度宽谱或者多个光谱的红光及近红外发光的材料及发光器件。
2、该发光材料可被紫外、蓝光、红光光源激发产生宽谱或者多个光谱。
3、该发光材料可被技术成熟的蓝光光源激发产生高强度宽谱或者多个光谱发光，相对于现有材料具有更高的发光强度。
附图说明
图1为本发明的实施例1中得到的发光材料的XRD衍射图谱图；
图2为本发明的实施例1中得到的发光材料的激发发射光谱图；
图3为本发明的实施例2中得到的发光材料的激发发射光谱图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明了，下面结合具体实施方式并参照附图，对本发明进一步详细说明。应该理解，这些描述只是示例性的，而并非要限制本发明的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本发明的概念。
本发明的第一方面提供了一种红光及近红外发光材料，该发光材料包含分子式为aSc 2O 3 .Ga 2O 3 .bR 2O 3的化合物，其中所述R元素包括Cr、Ni、Fe、Yb、Nd或Er元素中的一种或者两种，0.001≤a≤0.6，0.001≤b≤0.1。
作为优选，所述的aSc 2O 3 .Ga 2O 3 .bR 2O 3的化合物具有与β-Ga 2O 3相同的晶体结构。Ga 2O 3具有α、β、γ等五种同素异构体，其中最稳定的是β-Ga 2O 3,它具有单斜晶系结构，具有化学性质稳定，易掺杂阳离子的特点。本发明中β-Ga 2O 3可以在通过引入过渡族金属或者稀土金属离子实现红光和近红外的发光。另外，可以通过其他同族元素的取代可以实现光谱的可调可控。
作为优选，所述的红光及近红外发光材料，a、b进一步的取值范围为：0.15≤a≤0.35,0.02≤b≤0.05。
本发明的红光及近红外发光材料特点为β-Ga 2O 3中掺杂Sc元素，其具有更大原子半径，取代Ga阳离子，使得β-Ga 2O 3的晶格膨胀，发光中心离子和O阴离子的键长变长，从而促进晶体场强度变弱或者晶体场劈裂，实现了Cr离子的宽带或者多谱发射，且随着Sc离子含量增多，实现光谱长波移动，当Sc 2O 3含量0.15≤a≤0.35时，本发明的发光材料为β-Ga 2O 3结构，且具有更高的发光强度，当a小于0.15时发光强度稍低，当a超过0.35时，可能产 生杂相。R 2O 3中R元素作为发光中心，成分为0.02≤b≤0.05时本发明的发光材料具有最优的发光强度，当b<0.02时，因为发光中心太少，发光强度低，当b>0.05，发光中心浓度太高会导致发生浓度淬灭，从而同样降低发光强度。作为优选，所述的红光及近红外发光材料，R元素包括Cr。
作为优选，所述的红光及近红外发光材料，R元素为Cr。过渡族金属离子Cr 3+具有和Ga 3+相近的半径，很容易掺杂进入Ga 3+的扭曲八面体结构中，且Cr 3+的能级可随着晶体场强度的变弱而减小，可实现光谱的长波移动和得到宽峰发射，从而产生近红外宽谱的发光。
作为优选，所述的红光及近红外发光材料，还包括有Ce、Eu、Tb、Bi、Dy、Pr的一种或者两种。Ce、Eu、Tb、Bi、Dy、Pr元素中一种或者两种的引入，可引起该类元素向发光中心元素R的能量传递得到更强的红光和及近红外发光。
本发明的第二方面提供了一种上述红光及近红外发光材料的制备方法，包括如下步骤：
按分子式的化学计量比，称量原料Sc 2O 3、Ga 2O 3和R 2O 3；
将上述原料研磨混匀后装入坩埚，在空气或者氮气保护气氛下，在温度为1300-1500℃的高温炉内烧结2-10小时；
随炉冷却到室温，得到烧结后的样品；
所述样品经过球磨、水洗和筛分，得到所述红光和近红外发光材料。
本发明的第三方面提供了一种发光器件，利用前述的红光及近红外发光材料，结合激发光源可以制成一种发光器件。作为优选，所述的发光器件，激发光源发光峰值波长范围为250-320nm，400-500nm，550-700nm，优选440～470nm。
为了进一步说明本发明，以下结合实施例对本发明提供的红光及近红外发光材料及其制备方法进行详细描述，但是应当理解，这些实施例是在以本发明技术方案为前提下进行实施，给出了详细的实施方式和具体的操作过程，只是为了进一步说明本发明的特征和优点，而不是对本发明权利要求的限制， 本发明的保护范围也不限于下述的实施例。
以下实施例中所用的器件和试剂均为市售。
对比例
按化学式Sc 0.98BO 3:0.02Cr的化学计量比，准确称取Sc 2O 3、H 3BO 3和Cr 2O 3均匀混合，得到混合物；将所得混合物于空气氛围下，1300℃煅烧8h，降温后获得焙烧产物；将所得焙烧产物进行筛分、水洗等后处理，即可得到近红外发光材料样品。
将所得近红外发光材料样品进行460nm激发测试，得到对比例的发射峰位于810nm,半峰宽为133nm，其相对发光强度设定为100。
实施例1
按化学式0.22Sc 2O 3 .Ga 2O 3 .0.04Cr 2O 3的化学计量比，准确称量原料Sc 2O 3、Ga 2O 3和Cr 2O 3，将上述原料研磨混匀装入坩埚，空气氛围下，在高温炉内，1450摄氏度烧结8小时，随炉冷却到室温，样品经过球磨、水洗和筛分得到实施例1的红光和近红外发光材料。利用X射线衍射对实施例1中得到的发光材料进行分析，得到其X射线衍射图谱，如图1所示，其衍射图谱与PDF卡片11-0370号β-Ga 2O 3相同，只是整体衍射峰往小角度发生稍微的移动，表明实施例1的结构为β-Ga 2O 3结构，Sc元素的引入，得到了β-Ga 2O 3掺Sc的固溶体，其晶格发生膨胀，晶格面间距增大。
利用荧光光谱仪对实施例1中得到的发光材料进行分析，在蓝光460nm激发，得到其发光光谱，该材料在蓝光激发下具有红光及近红外光谱的宽谱发光，达到650nm～1050nm，其峰值波长为798nm，半峰宽为141nm，监测其798nm发光得到其激发光谱，如图2所示。可见该发光材料能有效地被紫外、紫光、蓝光以及红光激发，发射红光及近红外的宽谱。其相对发光强度为309。
实施例2
按化学式0.001Sc 2O 3 .Ga 2O 3 .0.04Cr 2O 3的化学计量比，准确称量原料Sc 2O 3、 Ga 2O 3和Cr 2O 3，将上述原料研磨混匀装入坩埚，空气氛围下，在高温炉内，1490摄氏度烧结8小时，随炉冷却到室温，样品经过球磨、水洗和筛分得到实施例2的红光和近红外发光材料。
利用荧光光谱仪对实施例2中得到的发光材料进行分析，在蓝光460nm激发，得到其发光光谱，该材料在蓝光激发下具有红光及近红外光谱的宽谱发光，达到650nm～900nm，其峰值波长为734nm,半峰宽为121nm监测其734nm发光得到其激发光谱，如图3所示。可见该发光材料能有效地被紫外、紫光、蓝光以及红光激发，发射红光及近红外的宽谱。其相对发光强度为245。
实施例3
按化学式0.6Sc 2O 3 .Ga 2O 3 .0.04Cr 2O 3的化学计量比，准确称量原料Sc 2O 3、Ga 2O 3和Cr 2O 3，将上述原料研磨混匀装入坩埚，空气氛围下，在高温炉内，1600摄氏度烧结8小时，随炉冷却到室温，样品经过球磨、水洗和筛分得到实施例3的红光和近红外发光材料。
利用荧光光谱仪对实施例3中得到的发光材料进行分析，在蓝光460nm激发，得到其发光光谱，该材料在蓝光激发下具有红光及近红外光谱的宽谱发光，达到700nm～1050nm，其峰值波长为830nm，半峰宽为143nm，其相对发光强度为258。
实施例4-22所述的红光及近红外发光材料，其化合物组成式分别见下表1中列出，各实施例中材料的制备方法同实施例1，只需根据各实施例中目标化合物的化学式组成，选择适当计量的化合物进行混合、研磨、选取适当的焙烧条件，得到所需的近红外发光材料。
对各实施例和对比例中制得发光材料的性能进行检测，对比例和实施例1-22在460nm激发的测试结果的发光性能见下表1所示。
表1
Figure PCTCN2019095238-appb-000001
Figure PCTCN2019095238-appb-000002
从上表可以看出，本发明的发光材料具有蓝光激发下发射红光及近红外光的宽谱发射或者多谱发射的特点，相对于现有近红外发光材料，以对比例作为比较，本发明的红光及近红外发光材料具有更高的发光强度。
综上所述，本发明提供了一种红光及近红外发光材料及其制备方法、以及包含该发光材料的发光器件，该红光及近红外发光材料包含分子式为aSc 2O 3 .Ga 2O 3 .bR 2O 3的化合物，其中R元素包括Cr、Ni、Fe、Yb、Nd或Er元素中的一种或者两种，0.001≤a≤0.6，0.001≤b≤0.1。该发光材料具有可被 波长范围丰富(紫外或紫光或蓝光)的光谱激发而产生650nm～1700nm宽谱或者多个光谱发光，且具有更高的发光强度。
应当理解的是，本发明的上述具体实施方式仅仅用于示例性说明或解释本发明的原理，而不构成对本发明的限制。因此，在不偏离本发明的精神和范围的情况下所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。此外，本发明所附权利要求旨在涵盖落入所附权利要求范围和边界、或者这种范围和边界的等同形式内的全部变化和修改例。

Claims (10)

  1. 一种红光及近红外发光材料，其特征在于，该发光材料包含分子式为aSc 2O 3 .Ga 2O 3 .bR 2O 3的化合物，其中所述R元素包括Cr、Ni、Fe、Yb、Nd或Er元素中的一种或者两种，0.001≤a≤0.6，0.001≤b≤0.1。
  2. 根据权利要求1所述的红光及近红外发光材料，其特征在于，所述化合物具有与β-Ga 2O 3相同的晶体结构。
  3. 根据权利要求2所述的红光及近红外发光材料，其特征在于，0.15≤a≤0.35,0.02≤b≤0.05。
  4. 根据权利要求1-3任一项所述的红光及近红外发光材料，其特征在于，R元素包括Cr。
  5. 根据权利要求4所述的红光及近红外发光材料，其特征在于，R元素为Cr。
  6. 根据权利要求1-5任一项所述的红光及近红外发光材料，其特征在于，R元素还包括Ce、Eu、Tb、Bi、Dy、Pr的一种或者两种。
  7. 一种根据权利要求1-6任一项所述的红光及近红外发光材料的制备方法，其特征在于，包括如下步骤：
    按分子式的化学计量比，称量原料Sc 2O 3、Ga 2O 3和R 2O 3；
    将上述原料研磨混匀后装入坩埚，在空气或者氮气保护气氛下，在温度为1200-1600℃的高温炉内烧结2-10小时；
    随炉冷却到室温，得到烧结后的样品；
    所述样品经过球磨、水洗和筛分，得到所述红光和近红外发光材料。
  8. 一种发光器件，至少包含激发光源和发光材料，其特征在于，所述发光材料至少包括权利要求1-6中任一项所述的红光及近红外发光材料。
  9. 根据权利要求8所述的发光器件，其特征在于，激发光源发光峰值波长范围为250-320nm，400-500nm和550-700nm。
  10. 根据权利要求9所述的发光器件，其特征在于，所述激发光源发 光峰值波长范围为440-470nm。
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