CN110246770B - 半导体制造装置及半导体装置的制造方法 - Google Patents
半导体制造装置及半导体装置的制造方法 Download PDFInfo
- Publication number
- CN110246770B CN110246770B CN201910424177.7A CN201910424177A CN110246770B CN 110246770 B CN110246770 B CN 110246770B CN 201910424177 A CN201910424177 A CN 201910424177A CN 110246770 B CN110246770 B CN 110246770B
- Authority
- CN
- China
- Prior art keywords
- head
- stage
- solder
- semiconductor element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 10
- 230000008859 change Effects 0.000 claims abstract description 14
- 229910000679 solder Inorganic materials 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 42
- 238000001816 cooling Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 description 13
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/755—Cooling means
- H01L2224/75502—Cooling means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75753—Means for optical alignment, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/7592—Load or pressure adjusting means, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910424177.7A CN110246770B (zh) | 2015-05-12 | 2016-01-08 | 半导体制造装置及半导体装置的制造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015097594A JP6581389B2 (ja) | 2015-05-12 | 2015-05-12 | 半導体装置の製造装置及び製造方法 |
JP2015-097594 | 2015-05-12 | ||
CN201610011824.8A CN106158700B (zh) | 2015-05-12 | 2016-01-08 | 半导体装置的制造装置及半导体装置的制造方法 |
CN201910424177.7A CN110246770B (zh) | 2015-05-12 | 2016-01-08 | 半导体制造装置及半导体装置的制造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610011824.8A Division CN106158700B (zh) | 2015-05-12 | 2016-01-08 | 半导体装置的制造装置及半导体装置的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110246770A CN110246770A (zh) | 2019-09-17 |
CN110246770B true CN110246770B (zh) | 2023-10-20 |
Family
ID=57276175
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910424177.7A Active CN110246770B (zh) | 2015-05-12 | 2016-01-08 | 半导体制造装置及半导体装置的制造方法 |
CN201610011824.8A Active CN106158700B (zh) | 2015-05-12 | 2016-01-08 | 半导体装置的制造装置及半导体装置的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610011824.8A Active CN106158700B (zh) | 2015-05-12 | 2016-01-08 | 半导体装置的制造装置及半导体装置的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10347603B2 (zh) |
JP (1) | JP6581389B2 (zh) |
CN (2) | CN110246770B (zh) |
TW (1) | TWI603405B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102214040B1 (ko) * | 2017-03-06 | 2021-02-09 | (주)테크윙 | 반도체소자 테스트용 핸들러의 가압장치 및 그 작동 방법 |
TWI682152B (zh) * | 2017-08-22 | 2020-01-11 | 日商新川股份有限公司 | 安裝裝置及溫度測定方法 |
JP6517412B1 (ja) * | 2018-07-12 | 2019-05-22 | 白光株式会社 | はんだこて制御装置 |
WO2022030006A1 (ja) * | 2020-08-07 | 2022-02-10 | 株式会社新川 | 半導体装置の製造装置および製造方法 |
TWI793766B (zh) * | 2021-09-15 | 2023-02-21 | 日商新川股份有限公司 | 半導體裝置的製造裝置及製造方法 |
CN114871561B (zh) * | 2022-05-12 | 2024-02-27 | 昂纳科技(深圳)集团股份有限公司 | 热压焊头及热压焊设备 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09153522A (ja) * | 1995-11-30 | 1997-06-10 | Toshiba Corp | ボンディング装置およびボンディング方法 |
JP2002057190A (ja) * | 2000-08-09 | 2002-02-22 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置の製造装置 |
CN1513202A (zh) * | 2001-06-08 | 2004-07-14 | 芝浦机械电子装置股份有限公司 | 电子部件压接装置及其方法 |
CN1965401A (zh) * | 2004-06-08 | 2007-05-16 | 松下电器产业株式会社 | 元器件安装方法及元器件安装装置 |
CN101436560A (zh) * | 2007-11-16 | 2009-05-20 | 株式会社瑞萨科技 | 半导体装置的制造装置和半导体装置的制造方法 |
JP2010219334A (ja) * | 2009-03-17 | 2010-09-30 | Nec Corp | 電子部品製造装置、方法及びプログラム |
TW201230214A (en) * | 2011-01-05 | 2012-07-16 | Toshiba Kk | Method for manufacturing semiconductor device |
CN102959695A (zh) * | 2010-06-30 | 2013-03-06 | 株式会社新川 | 电子器件安装装置以及电子器件安装方法 |
CN103367181A (zh) * | 2012-04-02 | 2013-10-23 | 国际商业机器公司 | 用于接合基板的方法和设备 |
CN103887192A (zh) * | 2012-12-21 | 2014-06-25 | 贝思瑞士股份公司 | 用于在衬底上安装半导体芯片的热压结合方法及装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000036501A (ja) * | 1998-05-12 | 2000-02-02 | Sharp Corp | ダイボンド装置 |
US20090289098A1 (en) * | 2005-12-06 | 2009-11-26 | Katsumi Terada | Chip Mounting Apparatus and Chip Mounting Method |
CN201449396U (zh) * | 2009-03-23 | 2010-05-05 | 常州新区爱立德电子有限公司 | 顶针升降台调节装置 |
JP4880055B2 (ja) * | 2010-06-04 | 2012-02-22 | 株式会社新川 | 電子部品実装装置及びその方法 |
JP2016062960A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置の製造装置および半導体装置の製造方法 |
-
2015
- 2015-05-12 JP JP2015097594A patent/JP6581389B2/ja active Active
-
2016
- 2016-01-04 TW TW105100072A patent/TWI603405B/zh active
- 2016-01-08 CN CN201910424177.7A patent/CN110246770B/zh active Active
- 2016-01-08 CN CN201610011824.8A patent/CN106158700B/zh active Active
- 2016-03-04 US US15/061,970 patent/US10347603B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09153522A (ja) * | 1995-11-30 | 1997-06-10 | Toshiba Corp | ボンディング装置およびボンディング方法 |
JP2002057190A (ja) * | 2000-08-09 | 2002-02-22 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置の製造装置 |
CN1513202A (zh) * | 2001-06-08 | 2004-07-14 | 芝浦机械电子装置股份有限公司 | 电子部件压接装置及其方法 |
CN1965401A (zh) * | 2004-06-08 | 2007-05-16 | 松下电器产业株式会社 | 元器件安装方法及元器件安装装置 |
CN101436560A (zh) * | 2007-11-16 | 2009-05-20 | 株式会社瑞萨科技 | 半导体装置的制造装置和半导体装置的制造方法 |
JP2010219334A (ja) * | 2009-03-17 | 2010-09-30 | Nec Corp | 電子部品製造装置、方法及びプログラム |
CN102959695A (zh) * | 2010-06-30 | 2013-03-06 | 株式会社新川 | 电子器件安装装置以及电子器件安装方法 |
TW201230214A (en) * | 2011-01-05 | 2012-07-16 | Toshiba Kk | Method for manufacturing semiconductor device |
CN103367181A (zh) * | 2012-04-02 | 2013-10-23 | 国际商业机器公司 | 用于接合基板的方法和设备 |
CN103887192A (zh) * | 2012-12-21 | 2014-06-25 | 贝思瑞士股份公司 | 用于在衬底上安装半导体芯片的热压结合方法及装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6581389B2 (ja) | 2019-09-25 |
TW201640597A (zh) | 2016-11-16 |
CN110246770A (zh) | 2019-09-17 |
US10347603B2 (en) | 2019-07-09 |
CN106158700B (zh) | 2019-06-14 |
US20160336291A1 (en) | 2016-11-17 |
CN106158700A (zh) | 2016-11-23 |
TWI603405B (zh) | 2017-10-21 |
JP2016213384A (ja) | 2016-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110246770B (zh) | 半导体制造装置及半导体装置的制造方法 | |
JP4736355B2 (ja) | 部品実装方法 | |
JP5892682B2 (ja) | 接合方法 | |
JP2014123731A (ja) | 基板上に半導体チップを実装するための熱圧着ボンディング方法および装置 | |
US9426898B2 (en) | Thermocompression bonders, methods of operating thermocompression bonders, and interconnect methods for fine pitch flip chip assembly | |
JPH09153525A (ja) | ボンディング装置およびボンディング方法 | |
US10090273B2 (en) | Apparatus and method for manufacturing semiconductor device | |
JP6325053B2 (ja) | 接合システム、接合方法、および半導体デバイスの製造方法 | |
JP6083041B2 (ja) | 接合方法、接合システム、および半導体デバイスの製造方法 | |
JP4881014B2 (ja) | 半導体装置の製造方法 | |
KR101831389B1 (ko) | 실장장치 및 실장방법 | |
JP5892686B2 (ja) | 圧着装置および温度制御方法 | |
JP2003297878A (ja) | 部品の基板への部品押圧接合装置及び接合方法 | |
JP2007214241A (ja) | 半導体チップの実装方法及び半導体チップの実装装置 | |
JP2006073873A (ja) | 電子部品実装方法及び装置 | |
JP6577764B2 (ja) | 加圧加熱冷却装置及びフリップチップ実装装置並びにフリップチップ実装方法及び半導体装置の製造方法 | |
JP4732894B2 (ja) | ボンディング方法及びボンディング装置 | |
KR20070022058A (ko) | 부품 실장방법 및 부품 실장장치 | |
JP2005191460A (ja) | 半導体装置の製造方法及び半導体装置の製造装置 | |
KR20110026151A (ko) | 솔더 범프 형성 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Tokyo Applicant after: Kaixia Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. Address after: Tokyo Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo Applicant before: Pangea Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220129 Address after: Tokyo Applicant after: Pangea Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |