CN110120375A - 功率用半导体装置 - Google Patents

功率用半导体装置 Download PDF

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Publication number
CN110120375A
CN110120375A CN201910381937.0A CN201910381937A CN110120375A CN 110120375 A CN110120375 A CN 110120375A CN 201910381937 A CN201910381937 A CN 201910381937A CN 110120375 A CN110120375 A CN 110120375A
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CN
China
Prior art keywords
power semiconductor
semiconductor device
lead terminal
sealing body
end portion
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CN201910381937.0A
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English (en)
Chinese (zh)
Inventor
藤野纯司
石原三纪夫
新饲雅芳
原田启行
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN110120375A publication Critical patent/CN110120375A/zh
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WO2019116457A1 (ja) * 2017-12-13 2019-06-20 三菱電機株式会社 半導体装置及び電力変換装置
WO2019229828A1 (ja) * 2018-05-29 2019-12-05 新電元工業株式会社 半導体モジュール
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JP7489933B2 (ja) 2021-02-24 2024-05-24 三菱電機株式会社 半導体装置及びその製造方法
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WO2015178296A1 (ja) 2015-11-26
JP2018093244A (ja) 2018-06-14
US10658284B2 (en) 2020-05-19
JP6316412B2 (ja) 2018-04-25
JPWO2015178296A1 (ja) 2017-04-20
CN106104779B (zh) 2019-05-10
DE112015002348T5 (de) 2017-02-16

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