CN110071058A - 键合机用键合工具、半导体元件键合用键合机及相关方法 - Google Patents

键合机用键合工具、半导体元件键合用键合机及相关方法 Download PDF

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Publication number
CN110071058A
CN110071058A CN201910066248.0A CN201910066248A CN110071058A CN 110071058 A CN110071058 A CN 110071058A CN 201910066248 A CN201910066248 A CN 201910066248A CN 110071058 A CN110071058 A CN 110071058A
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China
Prior art keywords
bonding tool
bonding
substrate
bonder
support
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CN201910066248.0A
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CN110071058B (zh
Inventor
宋爱军
J·奈哈特
T·科洛西莫
B·特拉宾
M·瓦塞尔曼
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Kulicke and Soffa Investments Inc
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Kulicke and Soffa Investments Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • B23K3/087—Soldering or brazing jigs, fixtures or clamping means
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Abstract

提供了一种用于在键合机上将半导体元件键合到基板的键合工具。键合工具包括本体部分，该本体部分包括用于在键合过程期间在键合机上接触半导体元件的接触区域。键合工具还包括从本体部分延伸的支座，并且该支座配置为在键合过程的至少一部分期间接触基板。

Description

键合机用键合工具、半导体元件键合用键合机及相关方法
交叉引用
本申请要求2018年1月24日提交的美国临时申请No.62/621,199的权益，其内容通过引用结合在此。
技术领域
本发明涉及半导体包装的形成，并且更具体地，涉及用于与半导体元件键合用键合机结合使用的改进的键合工具。
背景技术
在半导体包装工业的某些方面，半导体元件键合到键合位置。例如，在传统的管芯附接(也称为管芯键合)应用中，半导体管芯被键合到基板的键合位置(例如，引线框、堆叠管芯应用中的另一管芯、间隔物等)。在先进的包装应用中，半导体元件(例如，裸半导体管芯、包装的半导体管芯等)被键合到基板的键合位置(例如，引线框架、PCB、载体、半导体晶片、BGA基板、另一半导体元件等)，具有导电结构(例如，导电凸块、接触垫、焊料凸块、导电柱、铜柱等)，用于提供半导体元件和基板之间的电互连。
在热压键合的某些应用中，在热压键合操作完成之后，在半导体元件和基板之间的区域中施加材料(例如，底部填充材料)。遗憾的是，所述区域可能变化(例如，就体积而言，例如，由于装置变化(例如，基板上的焊接掩模层的厚度的变化))。
因此，期望提供改进的键合工具、包括这种键合工具的键合机以及相关方法。
发明内容
根据本发明的示例性实施方式，提供了一种用于在键合机上将半导体元件键合到基板的键合工具。所述键合工具包括本体部分，所述本体部分包括用于在键合过程期间在键合机上接触半导体元件的接触区域。所述键合工具还包括从本体部分延伸的支座，并且所述支座配置为在键合过程的至少一部分期间接触基板。
根据本发明的另一示例性实施方式，提供了一种用于将半导体元件键合到基板的键合机。所述键合机包括键合工具。所述键合工具包括(a)本体部分，所述本体部分包括用于在键合过程期间在键合机上接触半导体元件的接触区域，以及(b)从本体部分延伸的支座，所述支座配置为在键合过程的至少一部分期间接触基板。所述键合机还包括用于支撑基板的支撑结构。
根据本发明的又一示例性实施方式，提供了一种操作键合机的方法。所述方法包括：(a)用键合工具承载半导体元件；(b)开始半导体元件的导电结构与基板的相应导电结构之间的接触；(c)在步骤(b)之后降低键合工具，使得键合工具的支座接触基板的上表面；以及(d)在步骤(c)之后升高键合工具。
根据本发明的又一示例性实施方式，提供了一种操作键合机的方法。所述方法包括：(a)用键合工具承载半导体元件；(b)开始半导体元件与基板上的粘合材料之间的接触；(c)在步骤(b)之后降低键合工具，使得键合工具的支座接触基板的上表面。
附图说明
当结合附图阅读时，从以下详细描述中可以最好地理解本发明。需要强调的是，根据惯例，附图的各种特征未按比例绘制。相反，为了清楚起见，各种特征的尺寸被任意扩大或缩小。附图中包括以下各图：
图1是根据本发明的示例性实施方式的键合机的框形侧视图；
图2是根据本发明的示例性实施方式的另一键合机的框形侧视图；
图3A-3E是图1的键合机的元件的框形侧视图，示出了根据本发明的示例性实施方式的操作键合机的方法；以及
图4A-4B是管芯附接机的元件的框形侧视图，示出了根据本发明示例性实施方式的操作键合机的方法。
具体实施方式
如在此所使用，术语“半导体元件”旨在表示包括(或配置为包括在后面的步骤中)半导体芯片或管芯的任何结构。示例性半导体元件包括裸半导体管芯、基板上的半导体管芯(例如，引线框架、PCB、载体、半导体芯片、半导体晶片、BGA基板、半导体元件等)、包装的半导体装置、倒装芯片半导体装置、嵌入基板中的管芯、半导体管芯的堆叠等。此外，半导体元件可包括配置为键合或以其他方式包括在半导体包装中的元件(例如，以堆叠管芯配置键合的间隔物、基板等)。
如在此所使用，术语“基板”旨在表示半导体元件可以键合(例如，热压键合、超声键合、热声键合、芯片键合等)到的任何结构。示例性基板包括，例如，引线框架、PCB、载体、半导体芯片、半导体晶片、BGA基板、半导体元件等。根据本发明的某些示例性方面，支座(包括在键合工具中)在键合过程的至少一部分期间可接触基板：应当理解，支座(或支座的任何延伸部)可接触基板的任何部分(或基板的任何延伸部)。
根据本发明的示例性方面，提供用于键合机的键合工具(例如，放置工具)，诸如热压键合机(TCB)机器、倒装芯片键合机等。例如，这种键合工具可附接到加热器(例如，脉冲加热器)或与加热器(例如，脉冲加热器)结合，用于加热与热压键合操作相关的半导体元件。在本发明的其他实施方式中，提供用于管芯附接机或其他键合机的键合工具。
与热压键合过程有关，键合工具将半导体元件(例如，半导体管芯、内插件等)放置在基板上，并将半导体元件键合到基板(例如，半导体芯片、晶片等)。配置成接收半导体元件的基板为半导体元件提供机械支撑，但也可提供与半导体元件的电连接(通过基板和半导体元件中的每一个上的相应导电结构)。例如，半导体元件到基板的倒装芯片键合可包括通过在放置的半导体元件上原位熔化并重新固化焊料凸块。在特定示例中，可例如通过蚀刻层压到非导电材料上的铜片来形成基板上的导电结构。
经常，基板包括顶部的焊接掩模层，其具有在焊点形成期间约束焊料位置的开口。在实践中，焊接掩模层厚度在相同基板上从一个位置到另一个位置变化，并且在不同的生产批次中从一批到另一批变化。在将一个或多个半导体元件热压键合到基板之后，现在键合的基板可经历清洁过程和封装化合物模制过程。
关于某些键合机(例如，倒装芯片键合机、TCB机等)的操作，可以限定“支座高度”。例如，支座高度(SOH)可以指(a)被键合的半导体元件的顶表面和(b)基板的上表面(在基板包括焊接掩模层的实施方式中，可以是焊接掩模层的上表面)。图1提供了支座高度的示例性图示。支座高度(SOH)的一致性可显着影响模制一致性。遗憾的是，由于基板上的焊接掩模厚度的变化，至少部分地可能难以在各装置之间维持支座高度。
本发明的各方面涉及键合/放置工具(和相关的键合机)、以及操作键合机的方法，以补偿诸如焊接掩模变化的问题，从而提供更一致的支座高度。在本发明的具体示例中，键合/放置工具包括一个或多个支座(例如，从工具的接触表面延伸)，其可用于在热压键合期间检测焊接掩模层。使用这种方法，可以使从半导体元件到基板的上表面的最终距离(例如，支座高度)更加一致。
在键合/放置工具上提供的“支座”可以例如是柱、多个柱、壁、多个壁以及其他结构。
键合工具可以是加热的工具，其中，加热器和所述工具集成在一个部件中。在其他示例中，可以提供与键合工具分开的加热器。在其他示例中，可以利用非加热的键合工具。根据本发明的键合工具可以限定一个或多个真空路径，其提供用于保持半导体元件的真空。
根据本发明的键合工具可以与键合机(例如，热压键合机(TCB机)、倒装芯片键合机、传统的芯片附接机等)结合使用。关于热压键合机，键合工具可以是指可附接到脉冲加热器(在加热器与工具分开的实施方式中)上或与所述脉冲加热器集成的部件。取决于应用，键合工具有时可被称为夹头、模具夹头、放置件工具、放置工具等。
在TCB过程中，键合工具经常通过在放置的半导体元件上原位熔化并重新固化焊料凸块将半导体元件(例如，管芯或内插件)放置并键合到基板(例如，任何类型的基板，诸如芯片、晶片等)。经常仅从半导体元件侧施加热量，而基板经常保持在低阶段温度处，与质量回流中的等温加热相反。
在各个附图中，相同的附图标记表示相同的元件。
现在参考附图，图1示出了键合机100(例如，热压键合机、倒装芯片键合机等)。键合机100包括承载键合工具102a的键合头组件102。可以例如使用高导热率材料(诸如氮化铝陶瓷材料)形成键合工具102a。当然，可以考虑其他材料用于键合工具102a(以及本发明范围内的其他工具)。键合工具102a包括承载(例如，使用真空等)半导体元件104的本体部分102a1。键合工具102a包括用于在键合过程期间接触半导体元件104的接触表面102a2。键合工具102a还包括支座102a3(例如，柱或诸如此类)。半导体元件104包括导电结构104a(例如，配置为用于焊料互连的Sn触点)。
键合机100还包括支撑结构108(例如，卡盘或诸如此类)(其中，由机器基座110承载支撑结构108)。由支撑结构108支撑基板106，并且包括导电结构106b，所述导电结构配置为用于连接(例如，焊料互连)到相应的导电结构104a。焊料掩模层106a设置在基板106的上表面上。支座高度(SOH)显示为半导体元件104的上表面和焊接掩模层106a的上表面之间的距离/高度(当然，在图1中，SOH示出为具有位于上方的半导体元件104，并且未键合到基板106-并且还可以在如图3E所示的键合位置测量SOH)。
图2示出了与图1中的键合机100非常相似的键合机100'。在图1和图2之间，相同的附图标记表示相同(或类似)的元件。与键合工具102a(在图1中示出，其包括单个支座102a3)相比，键合工具102a'(在图2中，包括在键合机100'的键合头组件102'中)包括多个支座102a3(在图2所示的示例中，提供了两个支座102a3)。根据给定的应用中的需要，可提供任何数量的支座。此外，支座可具有任何所需的配置，诸如柱、壁等。这些变化(例如支座的数量、支柱的类型，诸如柱或壁，等)可适用于本发明的任何应用，包括但不限于倒装芯片键合、热压键合和管芯附接过程。
图3A-3E示出了图1的键合机100的键合操作(为了简单而移除某些元件)，具有单个支座102a3，但是也适用于具有多个支座102a3的实施方式(诸如图2中所示)。在图3A处，键合工具102朝向基板106移动并接近所述基板(如向下箭头所示)。图3B示出了(i)半导体元件104的导电结构104a与(ii)基板106的相应导电结构106b之间的开始接触。可以使用诸如键合力检测(例如，键合力中的改变)、位置检测(例如，使用z轴位置测量/检测系统)、速度检测以及其他技术的多种方法中的任何一种来检测(和/或声明)所述开始接触。图3C示出了焊料熔化等，使得成对的导电结构104a/106b已经开始改变形式。在图3D处，支座102a3已经与基板106的焊接掩模层106a接触。可以使用诸如键合力检测(例如，键合力中的改变)、位置检测(例如，使用z轴位置测量/检测系统)、速度检测以及其他技术的多种方法中的任何一种来检测(和/或声明)所述接触。在检测到所述接触之后，可以将键合工具102a以预定距离升高(使得建立“最终”SOH，参见图3E)，并且然后成对的改性的(例如，熔化的)导电结构104a/106b将在这个位置中固化。跟随图3E，可以在半导体元件104和基板106之间的间隙中添加底部填充材料，然后进行封装。
本发明的各方面也适用于管芯附接工具、管芯附接设备和管芯附接过程。在这些应用中，可能希望关于管芯背面和基板之间的粘合剂(诸如环氧树脂层)的厚度具有相对一致性。该厚度有时称为“键合线厚度”(即BLT)。
图4A示出了键合机400(例如，管芯附接机等)。键合机400包括承载键合工具402a(例如，管芯附接工具402a)的键合头组件402。键合工具402a包括承载(例如，使用真空等)半导体元件404(例如，半导体管芯404)的本体部分402a1。键合工具402a包括用于在管芯附接过程期间接触半导体元件404的接触表面402a2。键合工具402a还包括支座402a3(例如，柱或诸如此类)，用于在管芯附接过程期间控制z-高度/下沉。可以包括多个支座(例如，参见图2)。
键合机400还包括支撑结构408(例如，卡盘或诸如此类)(其中，由机器基座410承载支撑结构408)。基板406由支撑结构408支撑，并且包括粘合剂(例如，传统的管芯附接粘合剂，诸如环氧粘合剂)。
图4B示出了已经下沉的键合头组件402，使得键合工具402a将半导体元件404附接到基板406，其间设置有粘合剂406a。如图4B中所示，粘合剂406a通过管芯附接过程已经展开。支座402a3控制键合头组件402(包括键合工具402a)在管芯附接过程期间下沉的高度，从而控制粘合剂406a的挤压量，从而控制键合线厚度(BLT)。
尽管已经结合具体示例结构和方法示出并描述了本发明，但是本发明不限于此。例如，本发明的各方面可涉及具有任何期望形状和/或配置的一个或多个支座。此外，在与基板接触时，可以使用这种支座来限定SOH(或BLT或其他标准)-或者可以使用这种支座通过在与基板(例如，参见图3E)接触之后移动开预定距离来限定SOH(或BLT或其他标准)。
此外，各机器可以与本文提供的简化附图显着不同。例如，本发明范围内的键合工具也可以是拾取工具(其中，键合工具从诸如晶片的供应件“拾取”半导体元件，并且然后将半导体元件放置在基板上)。在其他示例中，键合工具可以通过某种类型的传递操作来接收半导体元件(例如，其中，传递是从单独的拾取工具或单独的传递工具等进行的)。
尽管主要通过参考包括一个或多个结构支座的实施方式来说明和描述本发明，但是本发明不限于此。可以利用不同的和/或另外的技术(非接触技术)来准确地控制键合过程期间的高度。例如，可以利用激光系统来检测键合表面和/或键合工具，以控制最终高度(例如，图3E中的SOH、图4B中的BLT高度等)。其他示例性技术包括霍尔效应传感器、接近传感器、位置传感器、运动传感器、速度传感器、电容传感器等。
尽管在此参考特定实施方式说明和描述了本发明，但是本发明并不旨在限于所示的细节。而是，可以在权利要求的等同物的领域和范围内对细节进行各种修改而不脱离本发明。

Claims (23)

1.一种用于在键合机上将半导体元件键合到基板的键合工具，所述键合工具包括：
本体部分，包括用于在键合过程期间在键合机上接触半导体元件的接触区域；和
支座，从本体部分延伸，并配置成在键合过程的至少一部分期间接触基板。
2.根据权利要求1所述的键合工具，其中，所述键合工具包括多个支座，所述支座从所述本体部分延伸并且配置为在所述键合过程的至少一部分期间接触所述基板。
3.根据权利要求1所述的键合工具，其中，所述支座从所述本体部分的接触区域延伸。
4.根据权利要求1所述的键合工具，其中，所述支座耦合到所述本体部分。
5.根据权利要求1所述的键合工具，其中，由包括所述本体部分的整块材料形成所述支座。
6.根据权利要求1所述的键合工具，其中，所述键合过程是热压键合过程。
7.根据权利要求1所述的键合工具，其中，所述支座配置为在所述键合过程的至少一部分期间接触所述基板的焊接掩模部分。
8.根据权利要求1所述的键合工具，其中，所述支座是柱。
9.根据权利要求1所述的键合工具，其中，所述支座是壁。
10.根据权利要求1所述的键合工具，其中，所述半导体元件是内插件。
11.根据权利要求1所述的键合工具，其中，所述键合工具是管芯附接工具，并且其中，所述键合过程是管芯附接过程。
12.根据权利要求11所述的键合工具，其中，所述支座配置为在所述管芯附接过程期间控制所述半导体元件与所述基板之间的粘合剂的厚度。
13.一种用于将半导体元件键合到基板的键合机，所述键合机包括：
键合工具，所述键合工具包括(a)本体部分，所述本体部分包括用于在键合过程期间在所述键合机上接触所述半导体元件的接触区域，以及(b)从所述本体部分延伸的支座，所述支座配置为在键合操作的至少一部分期间接触基板；和
用于支撑基板的支撑结构。
14.根据权利要求13所述的键合机，还包括：用于承载键合工具的键合头组件。
15.根据权利要求13所述的键合机，其中，所述键合工具是用于在所述键合机上在热压键合操作中使用的放置件工具。
16.根据权利要求13所述的键合机，其中，所述半导体元件是内插件。
17.根据权利要求13所述的键合机，其中，所述键合机是管芯附接机，并且所述键合工具是管芯附接工具。
18.一种操作键合机的方法，所述方法包括以下步骤：
(a)用键合工具承载半导体元件；
(b)开始半导体元件的导电结构与基板的相应导电结构之间的接触；
(c)在步骤(b)之后降低键合工具，使得键合工具的支座接触基板的上表面；和
(d)在步骤(c)之后升高键合工具。
19.根据权利要求18所述的方法，其中，步骤(c)包括用所述支座接触所述基板的焊接掩模层。
20.根据权利要求18所述的方法，其中，步骤(d)包括在步骤(c)之后将所述键合工具以预定量升高。
21.根据权利要求18所述的方法，还包括：在步骤(b)和(c)之间，至少部分地熔化(i)半导体元件的导电结构和(ii)基板的相应导电结构中的至少一个的步骤。
22.根据权利要求21所述的方法，还包括：在步骤(d)之后固化半导体元件的导电结构和基板的相应导电结构的步骤。
23.一种操作管芯附接机的方法，所述方法包括以下步骤：
(a)用键合工具承载半导体元件；
(b)开始半导体元件与基板上的粘合材料之间的接触；和
(c)在步骤(b)之后降低键合工具，使得键合工具的支座接触基板的上表面。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111653494A (zh) * 2020-06-16 2020-09-11 中国电子科技集团公司第二十四研究所 非接触式加热的倒装焊工艺方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116420221A (zh) 2020-11-05 2023-07-11 库利克和索夫工业公司 操作焊线机的方法，包括监测焊线机上焊接力精度的方法及相关方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340607B1 (en) * 1999-08-09 2002-01-22 Sony Chemicals Corp. Process for mounting semiconductor device and mounting apparatus
CN1412830A (zh) * 2001-10-19 2003-04-23 富士通株式会社 半导体衬底夹具和半导体器件的制造方法
TW583757B (en) * 2003-02-26 2004-04-11 Advanced Semiconductor Eng A structure of a flip-chip package and a process thereof
US20120319261A1 (en) * 2011-06-20 2012-12-20 Raytheon Company Hermetically sealed wafer packages

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043639A1 (ja) * 2005-10-14 2007-04-19 Fujikura Ltd. プリント配線基板及びプリント配線基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340607B1 (en) * 1999-08-09 2002-01-22 Sony Chemicals Corp. Process for mounting semiconductor device and mounting apparatus
US20020029857A1 (en) * 1999-08-09 2002-03-14 Yukio Yamada Process for mounting semiconductor device and mounting apparatus
CN1412830A (zh) * 2001-10-19 2003-04-23 富士通株式会社 半导体衬底夹具和半导体器件的制造方法
TW583757B (en) * 2003-02-26 2004-04-11 Advanced Semiconductor Eng A structure of a flip-chip package and a process thereof
US20120319261A1 (en) * 2011-06-20 2012-12-20 Raytheon Company Hermetically sealed wafer packages

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111653494A (zh) * 2020-06-16 2020-09-11 中国电子科技集团公司第二十四研究所 非接触式加热的倒装焊工艺方法
CN111653494B (zh) * 2020-06-16 2021-10-15 中国电子科技集团公司第二十四研究所 非接触式加热的倒装焊工艺方法

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