CN109887923A - 三维可编程存储器制备方法 - Google Patents

三维可编程存储器制备方法 Download PDF

Info

Publication number
CN109887923A
CN109887923A CN201910109123.1A CN201910109123A CN109887923A CN 109887923 A CN109887923 A CN 109887923A CN 201910109123 A CN201910109123 A CN 201910109123A CN 109887923 A CN109887923 A CN 109887923A
Authority
CN
China
Prior art keywords
dielectric layer
deep hole
deep
connection conductor
middle dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910109123.1A
Other languages
English (en)
Chinese (zh)
Inventor
彭泽忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Pi Zhao Yong Technology Co Ltd
Original Assignee
Chengdu Pi Zhao Yong Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu Pi Zhao Yong Technology Co Ltd filed Critical Chengdu Pi Zhao Yong Technology Co Ltd
Priority to CN201910109123.1A priority Critical patent/CN109887923A/zh
Publication of CN109887923A publication Critical patent/CN109887923A/zh
Priority to PCT/CN2020/070410 priority patent/WO2020156039A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels

Landscapes

  • Semiconductor Memories (AREA)
CN201910109123.1A 2019-02-03 2019-02-03 三维可编程存储器制备方法 Pending CN109887923A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910109123.1A CN109887923A (zh) 2019-02-03 2019-02-03 三维可编程存储器制备方法
PCT/CN2020/070410 WO2020156039A1 (fr) 2019-02-03 2020-01-21 Procédé de fabrication d'une mémoire programmable tridimensionnelle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910109123.1A CN109887923A (zh) 2019-02-03 2019-02-03 三维可编程存储器制备方法

Publications (1)

Publication Number Publication Date
CN109887923A true CN109887923A (zh) 2019-06-14

Family

ID=66927790

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910109123.1A Pending CN109887923A (zh) 2019-02-03 2019-02-03 三维可编程存储器制备方法

Country Status (2)

Country Link
CN (1) CN109887923A (fr)
WO (1) WO2020156039A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020156039A1 (fr) * 2019-02-03 2020-08-06 成都皮兆永存科技有限公司 Procédé de fabrication d'une mémoire programmable tridimensionnelle
CN112992906A (zh) * 2021-02-19 2021-06-18 成都皮兆永存科技有限公司 全自对准高密度3d多层存储器的制备方法
CN113035874A (zh) * 2020-04-08 2021-06-25 成都皮兆永存科技有限公司 高密度三维可编程存储器的制备方法
CN113644074A (zh) * 2021-06-04 2021-11-12 成都皮兆永存科技有限公司 高密度三维多层存储器及制备方法
CN114649327A (zh) * 2022-05-13 2022-06-21 成都皮兆永存科技有限公司 低阻互联高密度三维存储器件及制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150155388A1 (en) * 2013-11-29 2015-06-04 Macronix International Co., Ltd. Semiconductor structure
CN106409768A (zh) * 2016-04-19 2017-02-15 清华大学 Nand存储器结构、形成方法和三维存储器阵列
CN109166861A (zh) * 2018-09-12 2019-01-08 长江存储科技有限责任公司 一种三维存储器及其制作方法
CN109244079A (zh) * 2018-07-06 2019-01-18 成都皮兆永存科技有限公司 半导体存储器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9842851B2 (en) * 2015-10-30 2017-12-12 Sandisk Technologies Llc Three-dimensional memory devices having a shaped epitaxial channel portion
CN106935592A (zh) * 2015-12-31 2017-07-07 中芯国际集成电路制造(上海)有限公司 3d nand闪存的形成方法
CN109887923A (zh) * 2019-02-03 2019-06-14 成都皮兆永存科技有限公司 三维可编程存储器制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150155388A1 (en) * 2013-11-29 2015-06-04 Macronix International Co., Ltd. Semiconductor structure
CN106409768A (zh) * 2016-04-19 2017-02-15 清华大学 Nand存储器结构、形成方法和三维存储器阵列
CN109244079A (zh) * 2018-07-06 2019-01-18 成都皮兆永存科技有限公司 半导体存储器
CN109166861A (zh) * 2018-09-12 2019-01-08 长江存储科技有限责任公司 一种三维存储器及其制作方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020156039A1 (fr) * 2019-02-03 2020-08-06 成都皮兆永存科技有限公司 Procédé de fabrication d'une mémoire programmable tridimensionnelle
CN113035874A (zh) * 2020-04-08 2021-06-25 成都皮兆永存科技有限公司 高密度三维可编程存储器的制备方法
WO2021203897A1 (fr) * 2020-04-08 2021-10-14 成都皮兆永存科技有限公司 Procédé de fabrication de mémoire programmable tridimensionnelle à haute densité
CN112992906A (zh) * 2021-02-19 2021-06-18 成都皮兆永存科技有限公司 全自对准高密度3d多层存储器的制备方法
CN113644074A (zh) * 2021-06-04 2021-11-12 成都皮兆永存科技有限公司 高密度三维多层存储器及制备方法
WO2022252461A1 (fr) * 2021-06-04 2022-12-08 成都皮兆永存科技有限公司 Mémoire multicouche tridimensionnelle haute densité et son procédé de préparation
CN113644074B (zh) * 2021-06-04 2023-12-15 成都皮兆永存科技有限公司 高密度三维多层存储器及制备方法
CN114649327A (zh) * 2022-05-13 2022-06-21 成都皮兆永存科技有限公司 低阻互联高密度三维存储器件及制备方法
CN114649327B (zh) * 2022-05-13 2022-08-19 成都皮兆永存科技有限公司 低阻互联高密度三维存储器件及制备方法

Also Published As

Publication number Publication date
WO2020156039A1 (fr) 2020-08-06

Similar Documents

Publication Publication Date Title
CN109887923A (zh) 三维可编程存储器制备方法
CN109686703A (zh) 可编程存储器的制备方法
TWI710059B (zh) 具有在閘極線縫隙中的支撐結構的三維記憶體元件和其形成方法
US20230171955A1 (en) Methods of manufacturing 3d programmable memory devices
CN109920793A (zh) 3d存储器件及其制造方法
JP2019009383A (ja) 半導体装置及びその製造方法
CN104396004A (zh) 三维存储器阵列的多级接触及其制造方法
CN108630695A (zh) 存储装置
WO2022174593A1 (fr) Procédé de préparation de mémoire multicouche 3d à haute densité auto-alignée
CN103579251A (zh) 非易失性存储器件及其制造方法
US20140103530A1 (en) Three dimensional stacked semiconductor structure and method for manufacturing the same
CN109119424A (zh) 3d存储器件及其制造方法
CN109545794A (zh) 3d存储器件及其制造方法
WO2021203897A1 (fr) Procédé de fabrication de mémoire programmable tridimensionnelle à haute densité
CN111180453B (zh) 三维存储器、制备方法及电子设备
CN107946313A (zh) 一种3d nand闪存堆叠结构的制备方法及3d nand闪存
CN111968988B (zh) 三维存储器及其制造方法
US11521897B2 (en) Methods of forming microelectronic devices
US10998378B2 (en) Method for producing transistors, in particular selection transistors for non-volatile memory, and corresponding device
US20070235800A1 (en) Non-volatile memory device and method of manufacturing the same
CN108933145B (zh) 三维存储器
US7074689B2 (en) Method for fabricating a trench capacitor having an insulation collar, which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell
US20220320178A1 (en) Methods of manufacturing programmable memory devices
US11990413B2 (en) Three-dimensional memory device including aluminum alloy word lines and method of making the same
US20190108943A1 (en) High voltage capacitors and methods of manufacturing the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20190614

RJ01 Rejection of invention patent application after publication