CN109860031A - 半导体装置和设备 - Google Patents

半导体装置和设备 Download PDF

Info

Publication number
CN109860031A
CN109860031A CN201811448155.6A CN201811448155A CN109860031A CN 109860031 A CN109860031 A CN 109860031A CN 201811448155 A CN201811448155 A CN 201811448155A CN 109860031 A CN109860031 A CN 109860031A
Authority
CN
China
Prior art keywords
conductor part
semiconductor layer
semiconductor device
conductor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811448155.6A
Other languages
English (en)
Chinese (zh)
Inventor
石野英明
荻野拓海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN109860031A publication Critical patent/CN109860031A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H10W72/01953—Changing the shapes of bond pads by etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201811448155.6A 2017-11-30 2018-11-30 半导体装置和设备 Pending CN109860031A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-230988 2017-11-30
JP2017230988A JP7158846B2 (ja) 2017-11-30 2017-11-30 半導体装置および機器

Publications (1)

Publication Number Publication Date
CN109860031A true CN109860031A (zh) 2019-06-07

Family

ID=66632678

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811448155.6A Pending CN109860031A (zh) 2017-11-30 2018-11-30 半导体装置和设备

Country Status (3)

Country Link
US (1) US10622397B2 (https=)
JP (1) JP7158846B2 (https=)
CN (1) CN109860031A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314499A (zh) * 2020-02-26 2021-08-27 台湾积体电路制造股份有限公司 半导体器件及其形成方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7277248B2 (ja) * 2019-04-26 2023-05-18 キヤノン株式会社 半導体装置及びその製造方法
JP7417393B2 (ja) * 2019-09-27 2024-01-18 キヤノン株式会社 半導体装置及び半導体ウエハ
JP2022007971A (ja) * 2020-03-31 2022-01-13 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US12604554B2 (en) * 2020-03-31 2026-04-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus, photoelectric conversion system, and moving object
KR102878146B1 (ko) 2020-08-18 2025-10-31 삼성전자주식회사 이미지 센서
US12477853B2 (en) 2022-01-01 2025-11-18 Canon Kabushiki Kaisha Photoelectric conversion apparatus and photoelectric conversion system
JP7786823B2 (ja) 2022-01-01 2025-12-16 キヤノン株式会社 光電変換装置及び光電変換システム
KR20230125623A (ko) * 2022-02-21 2023-08-29 삼성전자주식회사 이미지 센서 패키지
US12598985B2 (en) * 2023-01-04 2026-04-07 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and forming method thereof

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5998808A (en) * 1997-06-27 1999-12-07 Sony Corporation Three-dimensional integrated circuit device and its manufacturing method
CN101582393A (zh) * 2008-05-12 2009-11-18 索尼株式会社 固体摄像器件制造方法和电子装置制造方法
US20130105924A1 (en) * 2010-06-30 2013-05-02 Canon Kabushiki Kaisha Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus
CN103378108A (zh) * 2012-04-27 2013-10-30 台湾积体电路制造股份有限公司 用于图像传感器封装的方法和装置
CN104282704A (zh) * 2013-07-05 2015-01-14 索尼公司 固态成像装置、其制造方法和电子设备
CN104576668A (zh) * 2013-10-09 2015-04-29 索尼公司 半导体装置、半导体装置制造方法和电子设备
CN105580136A (zh) * 2013-10-04 2016-05-11 索尼公司 半导体装置和固体摄像器件
WO2016174758A1 (ja) * 2015-04-30 2016-11-03 オリンパス株式会社 固体撮像装置および撮像システム
CN106298715A (zh) * 2015-06-25 2017-01-04 台湾积体电路制造股份有限公司 混合接合焊盘结构
US20170110497A1 (en) * 2014-03-28 2017-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked Image Sensor Having a Barrier Layer
CN106611755A (zh) * 2015-10-26 2017-05-03 台湾积体电路制造股份有限公司 用于前照式图像传感器的焊盘结构及其形成方法
CN107004060A (zh) * 2014-11-25 2017-08-01 流动马赛克公司 用于半导体制造工艺的经改进工艺控制技术

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147218A (ja) * 2007-12-17 2009-07-02 Toshiba Corp 半導体装置とその製造方法
JP2010074072A (ja) * 2008-09-22 2010-04-02 Nec Corp 半導体装置および半導体装置の製造方法
JP5853351B2 (ja) 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP2012019096A (ja) 2010-07-08 2012-01-26 Nec Corp 半導体チップの接合方法及び半導体チップの接合装置
JP5919653B2 (ja) 2011-06-09 2016-05-18 ソニー株式会社 半導体装置
KR20150005113A (ko) * 2013-07-04 2015-01-14 에스케이하이닉스 주식회사 광학 신호 경로를 포함하는 반도체 패키지
JP6233376B2 (ja) 2015-09-28 2017-11-22 ソニー株式会社 固体撮像装置及び電子機器

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5998808A (en) * 1997-06-27 1999-12-07 Sony Corporation Three-dimensional integrated circuit device and its manufacturing method
CN101582393A (zh) * 2008-05-12 2009-11-18 索尼株式会社 固体摄像器件制造方法和电子装置制造方法
US20130105924A1 (en) * 2010-06-30 2013-05-02 Canon Kabushiki Kaisha Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus
CN103378108A (zh) * 2012-04-27 2013-10-30 台湾积体电路制造股份有限公司 用于图像传感器封装的方法和装置
CN104282704A (zh) * 2013-07-05 2015-01-14 索尼公司 固态成像装置、其制造方法和电子设备
CN105580136A (zh) * 2013-10-04 2016-05-11 索尼公司 半导体装置和固体摄像器件
CN104576668A (zh) * 2013-10-09 2015-04-29 索尼公司 半导体装置、半导体装置制造方法和电子设备
US20170110497A1 (en) * 2014-03-28 2017-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked Image Sensor Having a Barrier Layer
CN107004060A (zh) * 2014-11-25 2017-08-01 流动马赛克公司 用于半导体制造工艺的经改进工艺控制技术
WO2016174758A1 (ja) * 2015-04-30 2016-11-03 オリンパス株式会社 固体撮像装置および撮像システム
CN106298715A (zh) * 2015-06-25 2017-01-04 台湾积体电路制造股份有限公司 混合接合焊盘结构
CN106611755A (zh) * 2015-10-26 2017-05-03 台湾积体电路制造股份有限公司 用于前照式图像传感器的焊盘结构及其形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314499A (zh) * 2020-02-26 2021-08-27 台湾积体电路制造股份有限公司 半导体器件及其形成方法

Also Published As

Publication number Publication date
JP2019102619A (ja) 2019-06-24
US10622397B2 (en) 2020-04-14
US20190165027A1 (en) 2019-05-30
JP7158846B2 (ja) 2022-10-24

Similar Documents

Publication Publication Date Title
CN109860031A (zh) 半导体装置和设备
US11855116B2 (en) Semiconductor apparatus and device
US7824964B2 (en) Method for fabricating package structures for optoelectronic devices
CN101937894B (zh) 具有贯通电极的半导体器件及其制造方法
US11296020B2 (en) Semiconductor device and method for manufacturing the same
US7745250B2 (en) Image sensor and method for manufacturing the same
JP5982748B2 (ja) 半導体装置、半導体装置の製造方法、および電子機器
CN102201418B (zh) 半导体装置、其制造方法和设计方法、以及电子装置
US10249665B2 (en) Solid-state imaging device and method of manufacturing solid-state imaging device
CN109698209A (zh) 堆叠互补金属氧化物半导体图像传感器
CN107240593B (zh) 一种堆叠式全局曝光像素单元结构及其形成方法
CN107195648B (zh) 一种低噪声高灵敏度全局像素单元结构及其形成方法
JP2013168419A (ja) 半導体装置、半導体装置の製造方法、及び、電子機器
TW200939465A (en) Solid-state imaging device, method of fabricating solid-state imaging device, and camera
JP5441382B2 (ja) 光電変換装置及び光電変換装置の製造方法
CN100424884C (zh) Cmos图像传感器及其制造方法
JP2011003645A (ja) 半導体装置およびその製造方法
CN109244092A (zh) 光电转换装置及其制造方法和包括光电转换装置的设备
CN106252323A (zh) 用于集成互补金属氧化物半导体（cmos）图像传感器工艺的平坦焊盘结构
US9773829B2 (en) Through-semiconductor-via capping layer as etch stop layer
WO2009141952A1 (ja) 半導体装置及びその製造方法
CN101246843A (zh) 具有光遮蔽性的多重金属内连线结构及其制作方法
TWI844305B (zh) 影像感測裝置及其製造方法
CN100550378C (zh) 图像传感器及其制造方法
CN104576675A (zh) 一种背照式图像传感器的制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190607

WD01 Invention patent application deemed withdrawn after publication