JP7158846B2 - 半導体装置および機器 - Google Patents

半導体装置および機器 Download PDF

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Publication number
JP7158846B2
JP7158846B2 JP2017230988A JP2017230988A JP7158846B2 JP 7158846 B2 JP7158846 B2 JP 7158846B2 JP 2017230988 A JP2017230988 A JP 2017230988A JP 2017230988 A JP2017230988 A JP 2017230988A JP 7158846 B2 JP7158846 B2 JP 7158846B2
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conductor
semiconductor device
conductor portion
semiconductor layer
insulator
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Japanese (ja)
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JP2019102619A (ja
JP2019102619A5 (https=
Inventor
英明 石野
拓海 荻野
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Canon Inc
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Canon Inc
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Priority to JP2017230988A priority Critical patent/JP7158846B2/ja
Priority to US16/193,998 priority patent/US10622397B2/en
Priority to CN201811448155.6A priority patent/CN109860031A/zh
Publication of JP2019102619A publication Critical patent/JP2019102619A/ja
Publication of JP2019102619A5 publication Critical patent/JP2019102619A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H10W72/01953—Changing the shapes of bond pads by etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2017230988A 2017-11-30 2017-11-30 半導体装置および機器 Active JP7158846B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017230988A JP7158846B2 (ja) 2017-11-30 2017-11-30 半導体装置および機器
US16/193,998 US10622397B2 (en) 2017-11-30 2018-11-16 Semiconductor apparatus and equipment
CN201811448155.6A CN109860031A (zh) 2017-11-30 2018-11-30 半导体装置和设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017230988A JP7158846B2 (ja) 2017-11-30 2017-11-30 半導体装置および機器

Publications (3)

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JP2019102619A JP2019102619A (ja) 2019-06-24
JP2019102619A5 JP2019102619A5 (https=) 2021-01-14
JP7158846B2 true JP7158846B2 (ja) 2022-10-24

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US (1) US10622397B2 (https=)
JP (1) JP7158846B2 (https=)
CN (1) CN109860031A (https=)

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* Cited by examiner, † Cited by third party
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JP7277248B2 (ja) * 2019-04-26 2023-05-18 キヤノン株式会社 半導体装置及びその製造方法
JP7417393B2 (ja) * 2019-09-27 2024-01-18 キヤノン株式会社 半導体装置及び半導体ウエハ
US11114373B1 (en) * 2020-02-26 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal structure
JP2022007971A (ja) * 2020-03-31 2022-01-13 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US12604554B2 (en) * 2020-03-31 2026-04-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus, photoelectric conversion system, and moving object
KR102878146B1 (ko) 2020-08-18 2025-10-31 삼성전자주식회사 이미지 센서
US12477853B2 (en) 2022-01-01 2025-11-18 Canon Kabushiki Kaisha Photoelectric conversion apparatus and photoelectric conversion system
JP7786823B2 (ja) 2022-01-01 2025-12-16 キヤノン株式会社 光電変換装置及び光電変換システム
KR20230125623A (ko) * 2022-02-21 2023-08-29 삼성전자주식회사 이미지 센서 패키지
US12598985B2 (en) * 2023-01-04 2026-04-07 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and forming method thereof

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JP2013232646A (ja) 2012-04-27 2013-11-14 Taiwan Semiconductor Manufacturing Co Ltd センサーデバイス及びｉｃ装置
JP2015029047A (ja) 2013-07-05 2015-02-12 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
WO2015050000A1 (ja) 2013-10-04 2015-04-09 ソニー株式会社 半導体装置および固体撮像素子
WO2016174758A1 (ja) 2015-04-30 2016-11-03 オリンパス株式会社 固体撮像装置および撮像システム
JP2017085100A (ja) 2015-10-26 2017-05-18 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 表面照射型イメージセンサ用パッド構造及びその形成方法

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JP4032454B2 (ja) * 1997-06-27 2008-01-16 ソニー株式会社 三次元回路素子の製造方法
JP2009147218A (ja) * 2007-12-17 2009-07-02 Toshiba Corp 半導体装置とその製造方法
JP5422914B2 (ja) * 2008-05-12 2014-02-19 ソニー株式会社 固体撮像装置の製造方法
JP2010074072A (ja) * 2008-09-22 2010-04-02 Nec Corp 半導体装置および半導体装置の製造方法
JP5853351B2 (ja) 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
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JP2012019096A (ja) 2010-07-08 2012-01-26 Nec Corp 半導体チップの接合方法及び半導体チップの接合装置
JP5919653B2 (ja) 2011-06-09 2016-05-18 ソニー株式会社 半導体装置
KR20150005113A (ko) * 2013-07-04 2015-01-14 에스케이하이닉스 주식회사 광학 신호 경로를 포함하는 반도체 패키지
JP2015076502A (ja) * 2013-10-09 2015-04-20 ソニー株式会社 半導体装置およびその製造方法、並びに電子機器
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KR102521159B1 (ko) * 2014-11-25 2023-04-13 피디에프 솔루션즈, 인코포레이티드 반도체 제조 공정을 위한 개선된 공정 제어 기술
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Publication number Priority date Publication date Assignee Title
JP2013232646A (ja) 2012-04-27 2013-11-14 Taiwan Semiconductor Manufacturing Co Ltd センサーデバイス及びｉｃ装置
JP2015029047A (ja) 2013-07-05 2015-02-12 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
WO2015050000A1 (ja) 2013-10-04 2015-04-09 ソニー株式会社 半導体装置および固体撮像素子
WO2016174758A1 (ja) 2015-04-30 2016-11-03 オリンパス株式会社 固体撮像装置および撮像システム
JP2017085100A (ja) 2015-10-26 2017-05-18 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 表面照射型イメージセンサ用パッド構造及びその形成方法

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Publication number Publication date
JP2019102619A (ja) 2019-06-24
US10622397B2 (en) 2020-04-14
US20190165027A1 (en) 2019-05-30
CN109860031A (zh) 2019-06-07

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