CN109781705A - 一种高通量、超灵敏检测的点阵阵列增强芯片 - Google Patents
一种高通量、超灵敏检测的点阵阵列增强芯片 Download PDFInfo
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- 239000011159 matrix material Substances 0.000 title claims abstract description 28
- 238000001514 detection method Methods 0.000 title claims abstract description 23
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 18
- 230000035945 sensitivity Effects 0.000 title abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010931 gold Substances 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000002356 single layer Substances 0.000 claims abstract description 8
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 5
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000004005 microsphere Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 8
- 206010020751 Hypersensitivity Diseases 0.000 claims description 6
- 230000008685 targeting Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 3
- 239000005357 flat glass Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000007605 air drying Methods 0.000 claims description 2
- 238000002444 silanisation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 claims 1
- 240000002853 Nelumbo nucifera Species 0.000 claims 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 150000002500 ions Chemical group 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 abstract description 4
- 238000003491 array Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000008187 granular material Substances 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 9
- 238000001069 Raman spectroscopy Methods 0.000 description 8
- 102100033072 DNA replication ATP-dependent helicase DNA2 Human genes 0.000 description 5
- 101000927313 Homo sapiens DNA replication ATP-dependent helicase DNA2 Proteins 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 108020004414 DNA Proteins 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 231100000765 toxin Toxicity 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 3
- 108091032973 (ribonucleotides)n+m Proteins 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 102000001554 Hemoglobins Human genes 0.000 description 2
- 108010054147 Hemoglobins Proteins 0.000 description 2
- 108700011259 MicroRNAs Proteins 0.000 description 2
- 239000012491 analyte Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229960000935 dehydrated alcohol Drugs 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000002679 microRNA Substances 0.000 description 2
- 244000000010 microbial pathogen Species 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 230000001018 virulence Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- INGWEZCOABYORO-UHFFFAOYSA-N 2-(furan-2-yl)-7-methyl-1h-1,8-naphthyridin-4-one Chemical compound N=1C2=NC(C)=CC=C2C(O)=CC=1C1=CC=CO1 INGWEZCOABYORO-UHFFFAOYSA-N 0.000 description 1
- 240000006409 Acacia auriculiformis Species 0.000 description 1
- 102000053602 DNA Human genes 0.000 description 1
- PZBFGYYEXUXCOF-UHFFFAOYSA-N TCEP Chemical compound OC(=O)CCP(CCC(O)=O)CCC(O)=O PZBFGYYEXUXCOF-UHFFFAOYSA-N 0.000 description 1
- NJSVDVPGINTNGX-UHFFFAOYSA-N [dimethoxy(propyl)silyl]oxymethanamine Chemical compound CCC[Si](OC)(OC)OCN NJSVDVPGINTNGX-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 108010006205 fluorescein isothiocyanate bovine serum albumin Proteins 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000011806 microball Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000004809 thin layer chromatography Methods 0.000 description 1
- 239000003053 toxin Substances 0.000 description 1
- 108700012359 toxins Proteins 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/10—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the liquid phase
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- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6456—Spatial resolved fluorescence measurements; Imaging
- G01N21/6458—Fluorescence microscopy
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
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- C03C2217/00—Coatings on glass
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- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
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Abstract
本发明公开了一种高通量、超灵敏检测的点阵阵列增强芯片，属于食品安全检测领域。本发明通过在亲水基底上化学键合单层纳米金颗粒，将纳米金材料通过静电吸附作用自然沉降至芯片孔洞中，并形成规则排列的点阵。孔洞排布的金颗粒在颗粒表面活性剂(CTAB)的间隔下形成等离子体区域增强热点所排布的纳米金颗粒相互之间聚集形成长程效应，从而提高了芯片的检测效率和灵敏度。
Description
技术领域
本发明涉及一种高通量、超灵敏检测的点阵阵列增强芯片，属于食品安全检测领域。
背景技术
近年来，生物毒素、重金属等物质的污染、检测及控制问题是长期困扰我国食品安全的重要问题，也是国家层面人民健康长期关注的热点问题。传统毒素检测方法如高效液相色谱法、薄层色谱等在检测时间、检测精度、设备成本、可操作性等方面存在一定的不足，而且针对食品加工过程中生物毒素降解产物的毒力有效识别和高通量快速检测涉及较少，尤其缺乏与生物毒素消减、降解等潜在危害物毒力高通量快速检测相匹配的技术和检测器件。现有的检测技术虽有优点，但多存在检测灵敏度较低、检测限较高以及检测目标单一等问题。
表面等离子体增强是指吸附在特定纳米级粗糙界面的分析物结构信号被极大增强的一种现象，其增强机理已被证实为相邻纳米颗粒之间区域电磁场耦合形成表面电子云叠加“热点”，即“热点”效应。(“热点”：相邻的金属纳米颗粒由于局域电磁场耦合而形成的分析物信号极大增强的区域)。等离子体增强“热点”效应的发现和“热点”基底制备方法的迅速发展，使得区域等离子体技术在化学、分析、生物等研究领域已得到了广泛应用。近年来，研究表明，相对于由二聚体及三聚体纳米颗粒形成的一维(1D)“热点”，二维(2D)和三维(3D)结构的区域等离子体“热点”增强阵列因其长程效应和数量的增多而使得总体等离子体信号大大增强，并且信号增强效应更加稳定、持久。虽然三维“热点”阵列具有独立的光散射和众多空间增强局域场，但由颗粒自组装形成的区域有序二维“热点”阵列因具有偏振光效应和界面有序性而更易于实际操控和应用。
发明内容
本发明提供了一种高通量、多靶向信号增强检测阵列芯片的制备技术，通过在亲水基底上化学键合单层纳米金颗粒(金球、金棒、金十字等不同形态的金基纳米材料)，所用的纳米金材料通过静电吸附作用自然沉降至芯片孔洞中，并形成规则排列的点阵。孔洞排布的金颗粒在颗粒表面活性剂(CTAB)的间隔下形成等离子体区域增强热点所排布的纳米金颗粒相互之间聚集形成长程效应，从而提高检测效率和灵敏度。
本发明的第一个目的是提供一种高通量、超灵敏、多靶向检测的区域等离子体信号增强点阵阵列芯片的制备方法；所述方法包括如下步骤：
(1)将微球溶液分散在芯片基底上，形成单层微球点阵，自然风干；
(2)将固定有微球点阵的亲水基底蒸镀铝膜；
(3)超声清洗，除去微球颗粒，制得表面具有微纳孔洞铝膜的芯片基底；
(4)对步骤(3)处理后的芯片基底表面硅烷化处理，使处理后的界面带正电荷或负电荷；
(5)将金纳米材料滴在步骤(4)处理后的基底表面，获得点阵阵列芯片。
在本发明的一种实施方式中，所述芯片基底为亲水基底。
在本发明的一种实施方式中，所述芯片基底的材料包括但不限于玻璃片、硅片、半导体。
在本发明的一种实施方式中，所述纳米金颗粒的形态包括但不限于：金球、金棒、金十字。
在本发明的一种实施方式中，所述纳米金颗粒表面具有颗粒表面活性剂(CTAB)。
在本发明的一种实施方式中，所述步骤(1)是将微球溶液平铺在玻璃片上，自然风干，形成单层微球点阵。为保证所排布的纳米金颗粒之间具有稳定的连续信号增强的效应和进行进一步功能化，芯片基底的制备中微球排布于玻片并尽可能形成单层的步骤至为重要。
在本发明的一种实施方式中，所述步骤(2)在磁控溅射仪中蒸镀铝膜，铝膜的厚度为50nm～100nm。
在本发明的一种实施方式中，所述步骤(4)是将超声清洗后的玻璃片于0.08～0.12MPa真空干燥，再于70℃的条件下蒸镀APTES或APTMS 0.8～1.2小时。
在本发明的一种实施方式中，所述微球为SiO2微球。
在本发明的一种实施方式中，所述芯片基底经过清洗，所述清洗具体是：
(1)分别用无水乙醇和超纯水超声清洗20～30分钟；
(2)将步骤(1)清洗后的芯片基底烘干后，在等离子体清洗机中进行清洗10～15分钟；
在本发明的一种实施方式中，所述微球清洗步骤：用移液枪吸取150μl的SiO2微球，采用降速梯度离心法用超纯水清洗5次，将清洗后的微球稀释至浓度为0.5～1.0mol/L。
本发明的第二个目的是提供应用所述方法制备的芯片。
本发明还要求保护所述芯片在化学、分析、生物领域检测方面的应用。
有益效果：本发明提供了一种高通量、超灵敏、多靶向检测的点阵阵列增强芯片，该芯片能够将检测信号的灵敏度提高102倍，并将检测限降低至aM级。
附图说明
图1基于微球刻蚀点阵技术的“热点”增强阵列芯片基底制备流程图；右侧为除去微球后芯片孔洞扫描电镜(SEM)图。
图2玻璃基质等离子体“热点”增强阵列芯片示意图(a)；纳米颗粒区域等离子体增强模拟图(b)；
图3FITC-BSA标记的芯片孔洞倒置荧光显微镜图(10x100)。
图4纳米金“热点”点阵阵列扫描电镜图。
图5金棒和金球“热点”点阵阵列芯片拉曼信号扫描图。
图6用本芯片来检测添加各种浓度的miRNA-21的荧光反应，图中由下至上的曲线分别代表添加的miRNA-21浓度0,0.00001,0.00008,0.0002,0.0003,0.0006,0.0008,0.0013,0.001,0.0016，0.005,0.1,1,10,50,100,150,200,400fM。
图7荧光强度对miRNA-21浓度的对数的依赖性，线性范围为0.0006至0.0016和0.1至100fM。每个数据是三次重复的平均值(N＝3)，误差条表示测量的标准偏差。
图8金棒和金球溶液的拉曼信号扫描图。
具体实施方式
实施例1芯片的制备
如图1和图2所示，本发明的芯片制备流程如下：
(1)玻片和微球的清洗：分别用无水乙醇和超纯水超声清洗玻片，清洗时间为30分钟；将清洗后的玻片烘干后在等离子体清洗机中进行清洗，时间为15分钟；将清洗后的玻片保存于超纯水中。
(2)微球在玻璃界面上定点排布,即用移液枪吸取50微升浓度为1mol/L微球溶液滴在玻片上，当微球溶液扩散到玻片底部时，将玻片底部旋转180°至顶部，使部分微球溶液回流，以形成面积更大的单层微球点阵；
(3)将玻片在磁控溅射仪中镀铝以固定微球的位置,通过调节蒸镀时间和蒸镀速率调控铝膜的厚度为50nm；
(4)将蒸镀铝膜的玻片在超纯水中进行超声清洗，除去界面上的微球得到芯片孔洞，将此玻片拍摄扫面电镜(SEM)。
实施例2芯片上金棒(AuNR)和金球(AuNP)的拉曼信号检测
将合成的金棒(AuNR)和金球(AuNP)沉降至纳米孔洞中，金棒即在孔洞中自聚形成信号增强“热点”点阵阵列，再加入200微升拉曼探针分子血红蛋白超声摇匀并检测拉曼信号，计算点阵增强效果。检测结果如图5所示，结果显示，相比于纯的血红蛋白分子，AuNR和AuNP点阵在波数600cm-1和1121cm-1均有增强的信号，且AuNP在波数1600cm-1处也有增强的信号。经过计算，本芯片的增强效果可达102倍。由此可见，本芯片具有良好的信号增强性能。
实施例3病原微生物microRNA检测
金棒或金十字偶联DNA步骤：
1.在PCR管中加入等体积数的100uM ssDNA和1mM TCEP，反应条件：静置避光3h
2.吸取0.1M的金纳米棒或金十字1mL；
3.吸取与步骤1体积和等体积数的SDS-HCL(pH＝3)加入步骤2中；
4.室温震荡12h,转速为1000rpm；
5.1000rpm离心10min，吸取上清液，向沉淀中加入0.005M CTAB备用。
将连接DNA2的金纳米十字沉降至孔洞中，此DNA链末端修饰有cy5荧光染料。另有金棒上连接DNA1，此DNA链与DNA2部分碱基互补配对，此时cy5荧光染料不发光，处于猝灭状态；当加入病原微生物miRNA-21时，由于此RNA与DNA1部分碱基互补配对，此时金棒上偶联的DNA1与RNA杂交，释放出金十字上偶联的DNA2的cy5荧光，根据cy5的荧光强度可对病原微生物的miRNA-21进行检测。检测结果如图6，图7所示，由荧光强度对miRNA-21浓度的对数的曲线给出了由等式表示的两个线性响应(F＝1830.32log C+6349.27，R2＝0.9901；以及F＝244.41log C+1916.10，R2＝0.9984)；检测限可低至0.5aM和0.03fM，而其他荧光方法的检测限为nM，表明该芯片具有高通量、超灵敏特性。
所用的DNA1、DNA2和microRNA序列均购自上海生物工程有限公司。
DNA1:5’-HS-C6-AAAAAATCAACATCAGTCTGATAAGCTA-3’
DNA2:5’-HS-C6-AAAAAAAAAAAAAAAATAGCTTATCAGACT-cy5-3’
miRNA-21:5’-UAGCUUAUCAGACUGAUGUUGA-3’
对比例1：
具体实施方式同实施例2，区别在于，纳米金材料没有沉降至纳米孔洞中，直接将200微升拉曼探针分子血红蛋白加入等量金棒(AuNR)和金球(AuNP)溶液中，超声摇匀并检测拉曼信号，结果如图8所示，与点阵芯片(图5)相比，溶液中的拉曼信号减弱了数10倍。
虽然本发明已以较佳实施例公开如上，但其并非用以限定本发明，任何熟悉此技术的人，在不脱离本发明的精神和范围内，都可做各种的改动与修饰，因此本发明的保护范围应该以权利要求书所界定的为准。
Claims (10)
1.一种高通量、超灵敏、多靶向检测的区域等离子体信号增强点阵阵列芯片的制备方法，其特征在于包括如下步骤：
(1)将微球溶液分散在芯片基底上，形成单层微球点阵，自然风干；
(2)将固定有微球点阵的亲水基底蒸镀铝膜；
(3)超声清洗，除去微球颗粒，制得表面具有微纳孔洞铝膜的芯片基底；
(4)对步骤(3)处理后的芯片基底表面硅烷化处理，使处理后的界面带正电荷或负电荷；
(5)将纳米金材料滴在步骤(4)处理后的基底表面，获得点阵阵列芯片。
2.根据权利要求1所述的方法，其特征在于，所述步骤(1)是将微球溶液平铺在玻璃片上，自然干燥，形成单层微球点阵。
3.根据权利要求1所述的方法，其特征在于，所述步骤(2)在磁控溅射仪中蒸镀铝膜，铝膜的厚度为50nm～100nm。
4.根据权利要求1所述的方法，其特征在于，所述芯片基底为亲水基底。
5.根据权利要求1或4所述的方法，其特征在于，所述芯片基底的材料包括但不限于玻璃片、硅片、半导体。
6.根据权利要求1所述的方法，其特征在于，所述纳米金材料的形态包括：金球、金棒或金十字。
7.根据权利要求1或6所述的方法，其特征在于，所述纳米金材料表面具有颗粒表面活性剂。
8.根据权利要求1或2所述的方法，其特征在于，所述微球的浓度为0.5～1.0mol/L。
9.应用权利要求1～8任一所述方法制备获得的高通量、超灵敏、多靶向检测的区域等离子体信号增强点阵阵列芯片。
10.权利要求9所述的高通量、超灵敏、多靶向检测的区域等离子体信号增强点阵阵列芯片在化学、分析、生物领域检测方面的应用。
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| CN113324975A (zh) * | 2021-06-10 | 2021-08-31 | 江南大学 | 一种磺胺二甲基嘧啶特异性传感器及表面增强拉曼检测磺胺二甲基嘧啶的方法 |
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| Publication number | Publication date |
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| CN109781705B (zh) | 2020-09-04 |
| WO2020155709A1 (zh) | 2020-08-06 |
| US20210147288A1 (en) | 2021-05-20 |
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