CN109755135A - 用于制造非易失性电荷俘获存储器装置的自由基氧化工艺 - Google Patents

用于制造非易失性电荷俘获存储器装置的自由基氧化工艺 Download PDF

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Publication number
CN109755135A
CN109755135A CN201811474047.6A CN201811474047A CN109755135A CN 109755135 A CN109755135 A CN 109755135A CN 201811474047 A CN201811474047 A CN 201811474047A CN 109755135 A CN109755135 A CN 109755135A
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China
Prior art keywords
layer
substrate
dielectric layer
free
channel
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CN201811474047.6A
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English (en)
Chinese (zh)
Inventor
克里希纳斯瓦米·库马尔
赛格·利维
边政树
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Longitudinal Flash Storage Solutions Co Ltd
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Cypress Semiconductor Corp
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Priority claimed from US13/539,458 external-priority patent/US8940645B2/en
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Publication of CN109755135A publication Critical patent/CN109755135A/zh
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    • H—ELECTRICITY
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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    • H01L29/66409—Unipolar field-effect transistors
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN201811474047.6A 2012-07-01 2013-07-01 用于制造非易失性电荷俘获存储器装置的自由基氧化工艺 Pending CN109755135A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/539,458 US8940645B2 (en) 2007-05-25 2012-07-01 Radical oxidation process for fabricating a nonvolatile charge trap memory device
US13/539,458 2012-07-01
CN201380031969.9A CN104781916A (zh) 2012-07-01 2013-07-01 用于制造非易失性电荷俘获存储器装置的自由基氧化工艺

Related Parent Applications (1)

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CN109755135A true CN109755135A (zh) 2019-05-14

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CN201811474047.6A Pending CN109755135A (zh) 2012-07-01 2013-07-01 用于制造非易失性电荷俘获存储器装置的自由基氧化工艺

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Country Status (4)

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KR (2) KR102018278B1 (ko)
CN (2) CN104781916A (ko)
TW (2) TWI709174B (ko)
WO (1) WO2014008161A1 (ko)

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US10211217B2 (en) 2017-06-20 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
CN109148468A (zh) * 2018-09-26 2019-01-04 长江存储科技有限责任公司 一种3d nand存储器

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