CN109650351B - 一种FeSe基超导体及制备方法 - Google Patents

一种FeSe基超导体及制备方法 Download PDF

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CN109650351B
CN109650351B CN201811592144.5A CN201811592144A CN109650351B CN 109650351 B CN109650351 B CN 109650351B CN 201811592144 A CN201811592144 A CN 201811592144A CN 109650351 B CN109650351 B CN 109650351B
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superconductor
fese
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CN109650351A (zh
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钟文武
陈基根
郭建刚
刘彦平
申士杰
林志萍
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Taizhou University
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Abstract

本发明涉及晶格调控提高超导温度和结构精修技术,尤其涉及铵离子插入FeSe超导层及制备方法,该制备方法为:液氨法制备FeSe插层超导体。本发明用Ba作为中间体,能够促进N0.81D3.24插入FeSe层间,利于层间稳定,从而提高超导温度。

Description

一种FeSe基超导体及制备方法
技术领域
本发明涉及超导温度调控技术领域,尤其涉及一种FeSe插层超导体的制备方法。
背景技术
超导材料的发现和超导材料的成功开发是20世纪科技进步的重要成就之一。某些物质在温度降低到一定值时电阻会完全消失,这种现象称为超导电性。超导技术是研究物质在超导状态下的性质、功能以及超导材料、超导器件的研制、开发和应用的技术。超导技术的开发和应用对国民经济、军事技术、科学实验与医疗卫生等具有重大价值。
随着超导材料载流能力和临界磁场强度等性能不断改善,超导材料的应用将大面积普及,将给科技带来革命性的变革,对人们的生活产生极大的影响。其中,超导材料的超导温度还较低,以及超导机理还不够清楚。因此,需要科学家进一步研究。通过插层来引起FeSe4四面体晶格的变形,以及提高其超导温度。
发明内容
针对上述问题,本发明提供方法简单、超导温度较高的N0.81D3.24Fe2Se2超导体及制备方法。
为达上述发明目的,本发明采用的技术方案为:一种N0.81D3.24Fe2Se2超导体,包括有N0.81D3.24存在于FeSe4四面体层间、FeSe4四面体晶格有较大的变形、Ba作为中间体。
一种N0.81D3.24Fe2Se2超导体制备方法,其特征在于:包括以下步骤:
利用液氨法制备N0.81D3.24Fe2Se2超导体:首先将制备好的0.8675 g FeSe粉体和0.1325 g Ba片放入带有阀和压力表的50 mL高温反应容器中;接着将ND3的混合气体连接到该容器中;然后将反应容器放入带有乙醇和干冰混合液体的低温箱中,并冷却到223 K;大约4 g的ND3凝聚后关闭阀门;将得到的混合粉末和ND3磁力搅拌4 h;接着将其加热到室温,将多余的挥发掉,即得到所需要的N0.81D3.24Fe2Se2超导体。
本发明利用液氨热法制备N0.81D3.24Fe2Se2超导体,用Ba为中间体,能够促进N0.81D3.24插入FeSe层间,利于层间稳定,从而提高超导温度。
附图说明
图1为本发明实施例制备N0.81D3.24Fe2Se2超导体的XRD精修图;
图2为本发明实施例制备N0.81D3.24Fe2Se2超导体的超导温度图。
具体实施方式
为更好地理解本发明,下面将结合附图和具体实施方式对本发明的技术方案做进一步说明,参见图1至图2:
按本发明实施的N0.81D3.24Fe2Se2超导体。图1为本发明实施例制备N0.81D3.24Fe2Se2超导体的XRD结构精修图,从精修结果可知N0.81D3.24存在于FeSe4四面体层间,FeSe4四面体晶格有较大的变形,具体晶格参数见表1;图2为本发明实施例制备N0.81D3.24Fe2Se2超导体的超导温度图,从图2可看出,通过插入N0.81D3.24后,FeSe超导温度从8 K到37 K。
Figure 930809DEST_PATH_IMAGE002
按本发明实施的N0.81D3.24Fe2Se2超导体制备方法,包括以下步骤:
利用液氨法制备N0.81D3.24Fe2Se2超导体:首先将制备好的0.8675 g FeSe粉体和0.1325 g Ba片放入带有阀和压力表的50 mL高温反应容器中;接着将ND3的混合气体连接到该容器中;然后将反应容器放入带有乙醇和干冰混合液体的低温箱中,并冷却到223 K;大约4 g的ND3凝聚后关闭阀门;将得到的混合粉末和ND3磁力搅拌4 h;接着将其加热到室温,将多余的挥发掉,即得到所需要的N0.81D3.24Fe2Se2超导体。
通过Ba作为中间体,促进ND3插入FeSe层间,利于层间稳定,从而提高超导温度。将N0.81D3.24插入FeSe层间,调节FeSe4四面体形变,从而调节FeSe插层体的超导温度。

Claims (4)

1.一种N0.81D3.24Fe2Se2超导体制备方法,其特征在于:包括以下步骤:首先将制备好的0.8675 g FeSe粉体和0.1325 g Ba片放入带有阀和压力表的50 mL高温反应容器中;接着将ND3的混合气体连接到该容器中;然后将反应容器放入带有乙醇和干冰混合液体的低温箱中,并冷却到223 K;4 g的ND3凝聚后关闭阀门;将得到的混合粉末和ND3磁力搅拌4 h;接着将其加热到室温,将多余的挥发掉,即得到所需要的N0.81D3.24Fe2Se2超导体。
2.根据权利要求1所述的方法制备的N0.81D3.24Fe2Se2超导体,其特征在于:所述的N0.81D3.24Fe2Se2超导体中,N0.81D3.24存在于FeSe4四面体层间。
3.根据权利要求1所述的方法制备的N0.81D3.24Fe2Se2超导体,其特征在于:所述的N0.81D3.24Fe2Se2超导体中,FeSe4四面体晶格的变形表现为:Se-Fe-Se 键角为104.812×2和111.85×4度。
4.根据权利要求1所述的方法制备的N0.81D3.24Fe2Se2超导体,其特征在于:所述的N0.81D3.24Fe2Se2超导体中,FeSe4四面体晶格的变形表现为:键长为Fe-Se 键为2.385埃,Fe-Fe键为2.6732埃,Se-D 键为3.0584埃。
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Citations (6)

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Publication number Priority date Publication date Assignee Title
CN101707089A (zh) * 2009-12-15 2010-05-12 中国科学院电工研究所 一种提高铁基超导体上临界场和临界电流密度的方法
CN101814344A (zh) * 2010-03-10 2010-08-25 中国科学院电工研究所 一种铁基超导体的制备方法
CN102142302A (zh) * 2011-04-25 2011-08-03 中国科学院电工研究所 一种基于FeSe的铁基超导材料及其制备方法
JP2014073948A (ja) * 2012-10-05 2014-04-24 Tokyo Institute Of Technology 超伝導化合物とその製造方法
CN106824214A (zh) * 2017-03-22 2017-06-13 台州学院 FeSe/BiVO4复合光催化剂及制备方法
CN108083237A (zh) * 2016-11-22 2018-05-29 中国科学院金属研究所 一种制备铁硒超导体的方法

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