CN109643992B - 高压自举采样电路 - Google Patents

高压自举采样电路 Download PDF

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Publication number
CN109643992B
CN109643992B CN201780048465.6A CN201780048465A CN109643992B CN 109643992 B CN109643992 B CN 109643992B CN 201780048465 A CN201780048465 A CN 201780048465A CN 109643992 B CN109643992 B CN 109643992B
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CN
China
Prior art keywords
high voltage
coupled
voltage transistor
transistor
gate
Prior art date
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Active
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CN201780048465.6A
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English (en)
Chinese (zh)
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CN109643992A (zh
Inventor
丹·米查姆
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Microchip Technology Inc
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Microchip Technology Inc
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Publication of CN109643992A publication Critical patent/CN109643992A/zh
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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02Sample-and-hold arrangements
    • G11C27/024Sample-and-hold arrangements using a capacitive memory element
    • G11C27/026Sample-and-hold arrangements using a capacitive memory element associated with an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054Gating switches, e.g. pass gates

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  • Electronic Switches (AREA)
CN201780048465.6A 2016-10-11 2017-10-11 高压自举采样电路 Active CN109643992B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662406881P 2016-10-11 2016-10-11
US62/406,881 2016-10-11
US15/729,294 2017-10-10
US15/729,294 US10163521B2 (en) 2016-10-11 2017-10-10 High voltage bootstrap sampling circuit
PCT/US2017/056050 WO2018071479A1 (en) 2016-10-11 2017-10-11 High voltage bootstrap sampling circuit

Publications (2)

Publication Number Publication Date
CN109643992A CN109643992A (zh) 2019-04-16
CN109643992B true CN109643992B (zh) 2023-07-25

Family

ID=61829094

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780048465.6A Active CN109643992B (zh) 2016-10-11 2017-10-11 高压自举采样电路

Country Status (7)

Country Link
US (1) US10163521B2 (enExample)
EP (1) EP3526898B1 (enExample)
JP (1) JP7061110B2 (enExample)
KR (1) KR20190060755A (enExample)
CN (1) CN109643992B (enExample)
TW (1) TW201826711A (enExample)
WO (1) WO2018071479A1 (enExample)

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US11699993B2 (en) * 2020-09-15 2023-07-11 Micron Technology, Inc. Signal sampling with offset calibration
CN112636759A (zh) * 2020-12-31 2021-04-09 成都思瑞浦微电子科技有限公司 一种采样电路
KR102435395B1 (ko) * 2021-02-25 2022-08-22 한국항공대학교산학협력단 높은 동적 입력 범위를 위한 샘플링 스위치 및 그의 구동 방법
CN116027696B (zh) * 2021-10-27 2024-12-17 中车株洲电力机车研究所有限公司 模拟量自适应采集装置、轨道交通信号采集系统及芯片
US12512827B2 (en) 2022-08-05 2025-12-30 Cirrus Logic Inc. Beyond-the-rails bootstrapped sampling switch
US11979151B2 (en) 2022-09-20 2024-05-07 Nxp Usa, Inc. Integrated circuit (IC) having an analog multiplexer (MUX)
CN115425958B (zh) * 2022-11-04 2023-02-17 西安水木芯邦半导体设计有限公司 一种用于控制高压模拟开关的栅源电压保持电路
CN116961655B (zh) * 2023-09-21 2023-12-08 电子科技大学 一种应用于高精度adc的斩波采样电路
US12470230B2 (en) 2024-01-23 2025-11-11 Cirrus Logic Inc. Systems and methods for precharging driver circuitry for an analog-to-digital converter

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EP2173031A1 (en) * 2008-10-01 2010-04-07 Austriamicrosystems AG Amplifier arrangement, measurement arrangement and signal processing method
US20100164597A1 (en) * 2008-12-31 2010-07-01 Linear Technology Corporation Bootstrap Transistor Circuit
CN102098034A (zh) * 2009-12-15 2011-06-15 北京中星微电子有限公司 自举采样电路

Also Published As

Publication number Publication date
KR20190060755A (ko) 2019-06-03
EP3526898A1 (en) 2019-08-21
JP7061110B2 (ja) 2022-04-27
CN109643992A (zh) 2019-04-16
TW201826711A (zh) 2018-07-16
EP3526898B1 (en) 2024-08-28
US10163521B2 (en) 2018-12-25
JP2019530278A (ja) 2019-10-17
WO2018071479A1 (en) 2018-04-19
US20180102180A1 (en) 2018-04-12

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