TW201826711A - 高電壓自舉採樣電路 - Google Patents
高電壓自舉採樣電路 Download PDFInfo
- Publication number
- TW201826711A TW201826711A TW106134751A TW106134751A TW201826711A TW 201826711 A TW201826711 A TW 201826711A TW 106134751 A TW106134751 A TW 106134751A TW 106134751 A TW106134751 A TW 106134751A TW 201826711 A TW201826711 A TW 201826711A
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- input
- coupled
- high voltage
- sampling
- Prior art date
Links
- 238000005070 sampling Methods 0.000 title claims abstract description 81
- 239000003990 capacitor Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 238000007667 floating Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims 2
- 238000005259 measurement Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/02—Sample-and-hold arrangements
- G11C27/024—Sample-and-hold arrangements using a capacitive memory element
- G11C27/026—Sample-and-hold arrangements using a capacitive memory element associated with an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
Landscapes
- Electronic Switches (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662406881P | 2016-10-11 | 2016-10-11 | |
| US62/406,881 | 2016-10-11 | ||
| US15/729,294 US10163521B2 (en) | 2016-10-11 | 2017-10-10 | High voltage bootstrap sampling circuit |
| US15/729,294 | 2017-10-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201826711A true TW201826711A (zh) | 2018-07-16 |
Family
ID=61829094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106134751A TW201826711A (zh) | 2016-10-11 | 2017-10-11 | 高電壓自舉採樣電路 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10163521B2 (enExample) |
| EP (1) | EP3526898B1 (enExample) |
| JP (1) | JP7061110B2 (enExample) |
| KR (1) | KR20190060755A (enExample) |
| CN (1) | CN109643992B (enExample) |
| TW (1) | TW201826711A (enExample) |
| WO (1) | WO2018071479A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10163521B2 (en) * | 2016-10-11 | 2018-12-25 | Microchip Technology Incorporated | High voltage bootstrap sampling circuit |
| US10686458B1 (en) * | 2017-08-01 | 2020-06-16 | Liming Xiu | Method and apparatus for improving frequency source frequency accuracy and frequency stability |
| US11699993B2 (en) * | 2020-09-15 | 2023-07-11 | Micron Technology, Inc. | Signal sampling with offset calibration |
| CN112636759A (zh) * | 2020-12-31 | 2021-04-09 | 成都思瑞浦微电子科技有限公司 | 一种采样电路 |
| KR102435395B1 (ko) * | 2021-02-25 | 2022-08-22 | 한국항공대학교산학협력단 | 높은 동적 입력 범위를 위한 샘플링 스위치 및 그의 구동 방법 |
| CN116027696B (zh) * | 2021-10-27 | 2024-12-17 | 中车株洲电力机车研究所有限公司 | 模拟量自适应采集装置、轨道交通信号采集系统及芯片 |
| US20240048108A1 (en) * | 2022-08-05 | 2024-02-08 | Cirrus Logic International Semiconductor Ltd. | Beyond-the-rails bootstrapped sampling switch |
| US11979151B2 (en) | 2022-09-20 | 2024-05-07 | Nxp Usa, Inc. | Integrated circuit (IC) having an analog multiplexer (MUX) |
| CN115425958B (zh) * | 2022-11-04 | 2023-02-17 | 西安水木芯邦半导体设计有限公司 | 一种用于控制高压模拟开关的栅源电压保持电路 |
| CN116961655B (zh) * | 2023-09-21 | 2023-12-08 | 电子科技大学 | 一种应用于高精度adc的斩波采样电路 |
| US12470230B2 (en) | 2024-01-23 | 2025-11-11 | Cirrus Logic Inc. | Systems and methods for precharging driver circuitry for an analog-to-digital converter |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5531774A (en) * | 1989-09-22 | 1996-07-02 | Alfred E. Mann Foundation For Scientific Research | Multichannel implantable cochlear stimulator having programmable bipolar, monopolar or multipolar electrode configurations |
| US5938691A (en) * | 1989-09-22 | 1999-08-17 | Alfred E. Mann Foundation | Multichannel implantable cochlear stimulator |
| US5603726A (en) * | 1989-09-22 | 1997-02-18 | Alfred E. Mann Foundation For Scientific Research | Multichannel cochlear implant system including wearable speech processor |
| JPH05286150A (ja) * | 1992-03-05 | 1993-11-02 | Internatl Business Mach Corp <Ibm> | プリントハンマーコイル電流のモニタ回路及び制御回路 |
| US5572155A (en) * | 1994-06-20 | 1996-11-05 | Fuji Photo Film Co., Ltd. | CCD signal read-out circuit free from ailiasing of high-frequency noises |
| EP0729232B1 (en) * | 1995-02-22 | 2003-09-17 | Texas Instruments Incorporated | A high voltage analog switch |
| US6078311A (en) * | 1996-03-26 | 2000-06-20 | Pacific Digital Peripherals, Inc. | Joystick game adapter card for a personal computer |
| US5839959A (en) * | 1996-03-26 | 1998-11-24 | Pacific Digital Peripherals, Inc. | Joystick game adapter card for a personal computer |
| US6017273A (en) * | 1996-03-26 | 2000-01-25 | Pacific Digital Peripherals, Inc. | Joystick game adapter card for a personal computer |
| US6208542B1 (en) * | 1998-06-30 | 2001-03-27 | Sandisk Corporation | Techniques for storing digital data in an analog or multilevel memory |
| US6326740B1 (en) * | 1998-12-22 | 2001-12-04 | Philips Electronics North America Corporation | High frequency electronic ballast for multiple lamp independent operation |
| US8571179B2 (en) * | 1999-11-10 | 2013-10-29 | Robert Beland | Computed tomography systems |
| US6738275B1 (en) * | 1999-11-10 | 2004-05-18 | Electromed Internationale Ltee. | High-voltage x-ray generator |
| FR2818423B1 (fr) * | 2000-12-20 | 2003-04-04 | Chauvin Arnoux | Procede d'acquisition par echantillonage de signaux analogiques et systeme d'acquisition pour la mise en oeuvre de ce procede |
| KR100520682B1 (ko) | 2004-02-25 | 2005-10-11 | 주식회사 하이닉스반도체 | 반도체 소자의 고전압 스위치 회로 |
| US7176742B2 (en) | 2005-03-08 | 2007-02-13 | Texas Instruments Incorporated | Bootstrapped switch with an input dynamic range greater than supply voltage |
| US7479811B2 (en) * | 2005-09-08 | 2009-01-20 | Mediatek Inc. | Sample/hold circuit module |
| EP2128633B1 (en) | 2008-05-29 | 2012-05-02 | Austriamicrosystems AG | Current-sense amplifier arrangement and method for measuring a voltage signal |
| EP2173031B1 (en) | 2008-10-01 | 2012-06-06 | Austriamicrosystems AG | Amplifier arrangement, measurement arrangement and signal processing method |
| US7816951B1 (en) * | 2008-10-10 | 2010-10-19 | National Semiconductor Corporation | Locally boosted top plate sampling for a sampling capacitor |
| US8502594B2 (en) | 2008-12-31 | 2013-08-06 | Linear Technology Corporation | Bootstrap transistor circuit |
| US7952419B1 (en) | 2009-11-16 | 2011-05-31 | Analog Devices, Inc. | Bootstrapped switch circuit |
| CN102098034B (zh) * | 2009-12-15 | 2014-07-30 | 北京中星微电子有限公司 | 自举采样电路 |
| CN102754531B (zh) * | 2010-12-02 | 2015-01-21 | 上舜照明（中国）有限公司 | 一种led驱动电源电路、驱动电源和照明装置 |
| WO2012077125A1 (en) * | 2010-12-08 | 2012-06-14 | Deepak Chandran | A system for monitoring and controlling high intensity discharge (hid) lamps |
| US8299837B1 (en) * | 2011-08-16 | 2012-10-30 | Himax Technologies Limited | Integrator-based common mode stabilization method applied to pseudo-differential switched-capacitor circuit |
| KR20130072804A (ko) * | 2011-12-22 | 2013-07-02 | 에스케이하이닉스 주식회사 | 신호 샘플링 회로 및 이를 포함하는 이미지 센서 |
| US8810301B1 (en) * | 2012-06-22 | 2014-08-19 | Cadence Design Systems, Inc. | System and method for level shifting signals with adjustably controlled frequency response |
| JP6154705B2 (ja) * | 2013-09-24 | 2017-06-28 | 株式会社 日立パワーデバイス | 半導体スイッチ回路、信号処理装置、および、超音波診断装置 |
| US9178413B2 (en) * | 2013-11-19 | 2015-11-03 | Active-Semi, Inc. | Power factor correction autodetect |
| US9287862B2 (en) * | 2013-12-26 | 2016-03-15 | Texas Instruments Incorporated | Bootstrapped sampling switch circuits and systems |
| WO2015120619A1 (en) * | 2014-02-14 | 2015-08-20 | Telefonaktiebolaget L M Ericsson (Publ) | Power supply electronic circuit |
| US9576679B2 (en) * | 2014-10-09 | 2017-02-21 | Silicon Laboratories Inc. | Multi-stage sample and hold circuit |
| US10148174B2 (en) * | 2016-03-28 | 2018-12-04 | Qualcomm Incorporated | Duty cycle estimator for a switch mode power supply |
| US9906143B1 (en) * | 2016-09-30 | 2018-02-27 | Dell Products L.P. | Systems and methods for diagnostic current shunt and overcurrent protection (OCP) for power supplies |
| US10163521B2 (en) * | 2016-10-11 | 2018-12-25 | Microchip Technology Incorporated | High voltage bootstrap sampling circuit |
| US10034336B1 (en) * | 2017-09-22 | 2018-07-24 | Dialog Semiconductor (Uk) Limited | Controlling output voltage to achieve ultra-low standby power in dim-to-off LED applications |
-
2017
- 2017-10-10 US US15/729,294 patent/US10163521B2/en active Active
- 2017-10-11 EP EP17791518.8A patent/EP3526898B1/en active Active
- 2017-10-11 TW TW106134751A patent/TW201826711A/zh unknown
- 2017-10-11 JP JP2019506444A patent/JP7061110B2/ja active Active
- 2017-10-11 WO PCT/US2017/056050 patent/WO2018071479A1/en not_active Ceased
- 2017-10-11 KR KR1020197003959A patent/KR20190060755A/ko not_active Withdrawn
- 2017-10-11 CN CN201780048465.6A patent/CN109643992B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20180102180A1 (en) | 2018-04-12 |
| US10163521B2 (en) | 2018-12-25 |
| CN109643992B (zh) | 2023-07-25 |
| KR20190060755A (ko) | 2019-06-03 |
| EP3526898B1 (en) | 2024-08-28 |
| CN109643992A (zh) | 2019-04-16 |
| JP2019530278A (ja) | 2019-10-17 |
| JP7061110B2 (ja) | 2022-04-27 |
| WO2018071479A1 (en) | 2018-04-19 |
| EP3526898A1 (en) | 2019-08-21 |
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