KR20190060755A - 고전압 부트스트랩 샘플링 회로 - Google Patents

고전압 부트스트랩 샘플링 회로 Download PDF

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Publication number
KR20190060755A
KR20190060755A KR1020197003959A KR20197003959A KR20190060755A KR 20190060755 A KR20190060755 A KR 20190060755A KR 1020197003959 A KR1020197003959 A KR 1020197003959A KR 20197003959 A KR20197003959 A KR 20197003959A KR 20190060755 A KR20190060755 A KR 20190060755A
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KR
South Korea
Prior art keywords
high voltage
voltage
coupled
input
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020197003959A
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English (en)
Korean (ko)
Inventor
댄 미참
Original Assignee
마이크로칩 테크놀로지 인코포레이티드
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Filing date
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Application filed by 마이크로칩 테크놀로지 인코포레이티드 filed Critical 마이크로칩 테크놀로지 인코포레이티드
Publication of KR20190060755A publication Critical patent/KR20190060755A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/026—Sample-and-hold arrangements using a capacitive memory element associated with an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

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  • Electronic Switches (AREA)
KR1020197003959A 2016-10-11 2017-10-11 고전압 부트스트랩 샘플링 회로 Withdrawn KR20190060755A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662406881P 2016-10-11 2016-10-11
US62/406,881 2016-10-11
US15/729,294 US10163521B2 (en) 2016-10-11 2017-10-10 High voltage bootstrap sampling circuit
US15/729,294 2017-10-10
PCT/US2017/056050 WO2018071479A1 (en) 2016-10-11 2017-10-11 High voltage bootstrap sampling circuit

Publications (1)

Publication Number Publication Date
KR20190060755A true KR20190060755A (ko) 2019-06-03

Family

ID=61829094

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197003959A Withdrawn KR20190060755A (ko) 2016-10-11 2017-10-11 고전압 부트스트랩 샘플링 회로

Country Status (7)

Country Link
US (1) US10163521B2 (enExample)
EP (1) EP3526898B1 (enExample)
JP (1) JP7061110B2 (enExample)
KR (1) KR20190060755A (enExample)
CN (1) CN109643992B (enExample)
TW (1) TW201826711A (enExample)
WO (1) WO2018071479A1 (enExample)

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KR102435395B1 (ko) * 2021-02-25 2022-08-22 한국항공대학교산학협력단 높은 동적 입력 범위를 위한 샘플링 스위치 및 그의 구동 방법

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US11699993B2 (en) * 2020-09-15 2023-07-11 Micron Technology, Inc. Signal sampling with offset calibration
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CN116027696B (zh) * 2021-10-27 2024-12-17 中车株洲电力机车研究所有限公司 模拟量自适应采集装置、轨道交通信号采集系统及芯片
US20240048108A1 (en) * 2022-08-05 2024-02-08 Cirrus Logic International Semiconductor Ltd. Beyond-the-rails bootstrapped sampling switch
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CN115425958B (zh) * 2022-11-04 2023-02-17 西安水木芯邦半导体设计有限公司 一种用于控制高压模拟开关的栅源电压保持电路
CN116961655B (zh) * 2023-09-21 2023-12-08 电子科技大学 一种应用于高精度adc的斩波采样电路
US12470230B2 (en) 2024-01-23 2025-11-11 Cirrus Logic Inc. Systems and methods for precharging driver circuitry for an analog-to-digital converter

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102435395B1 (ko) * 2021-02-25 2022-08-22 한국항공대학교산학협력단 높은 동적 입력 범위를 위한 샘플링 스위치 및 그의 구동 방법

Also Published As

Publication number Publication date
US20180102180A1 (en) 2018-04-12
US10163521B2 (en) 2018-12-25
CN109643992B (zh) 2023-07-25
EP3526898B1 (en) 2024-08-28
CN109643992A (zh) 2019-04-16
JP2019530278A (ja) 2019-10-17
JP7061110B2 (ja) 2022-04-27
TW201826711A (zh) 2018-07-16
WO2018071479A1 (en) 2018-04-19
EP3526898A1 (en) 2019-08-21

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Date Code Title Description
PA0105 International application

Patent event date: 20190211

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination