JP7061110B2 - 高電圧ブートストラップサンプリング回路 - Google Patents

高電圧ブートストラップサンプリング回路 Download PDF

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Publication number
JP7061110B2
JP7061110B2 JP2019506444A JP2019506444A JP7061110B2 JP 7061110 B2 JP7061110 B2 JP 7061110B2 JP 2019506444 A JP2019506444 A JP 2019506444A JP 2019506444 A JP2019506444 A JP 2019506444A JP 7061110 B2 JP7061110 B2 JP 7061110B2
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Japan
Prior art keywords
high voltage
coupled
voltage transistor
transistor
input
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JP2019506444A
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Japanese (ja)
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JP2019530278A (ja
JP2019530278A5 (enExample
Inventor
ダン ミーチャム，
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Microchip Technology Inc
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Microchip Technology Inc
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Publication of JP2019530278A5 publication Critical patent/JP2019530278A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/026—Sample-and-hold arrangements using a capacitive memory element associated with an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

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  • Electronic Switches (AREA)
JP2019506444A 2016-10-11 2017-10-11 高電圧ブートストラップサンプリング回路 Active JP7061110B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662406881P 2016-10-11 2016-10-11
US62/406,881 2016-10-11
US15/729,294 US10163521B2 (en) 2016-10-11 2017-10-10 High voltage bootstrap sampling circuit
US15/729,294 2017-10-10
PCT/US2017/056050 WO2018071479A1 (en) 2016-10-11 2017-10-11 High voltage bootstrap sampling circuit

Publications (3)

Publication Number Publication Date
JP2019530278A JP2019530278A (ja) 2019-10-17
JP2019530278A5 JP2019530278A5 (enExample) 2020-11-12
JP7061110B2 true JP7061110B2 (ja) 2022-04-27

Family

ID=61829094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019506444A Active JP7061110B2 (ja) 2016-10-11 2017-10-11 高電圧ブートストラップサンプリング回路

Country Status (7)

Country Link
US (1) US10163521B2 (enExample)
EP (1) EP3526898B1 (enExample)
JP (1) JP7061110B2 (enExample)
KR (1) KR20190060755A (enExample)
CN (1) CN109643992B (enExample)
TW (1) TW201826711A (enExample)
WO (1) WO2018071479A1 (enExample)

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US10163521B2 (en) * 2016-10-11 2018-12-25 Microchip Technology Incorporated High voltage bootstrap sampling circuit
US10686458B1 (en) * 2017-08-01 2020-06-16 Liming Xiu Method and apparatus for improving frequency source frequency accuracy and frequency stability
US11699993B2 (en) 2020-09-15 2023-07-11 Micron Technology, Inc. Signal sampling with offset calibration
CN112636759A (zh) * 2020-12-31 2021-04-09 成都思瑞浦微电子科技有限公司 一种采样电路
KR102435395B1 (ko) * 2021-02-25 2022-08-22 한국항공대학교산학협력단 높은 동적 입력 범위를 위한 샘플링 스위치 및 그의 구동 방법
CN116027696B (zh) * 2021-10-27 2024-12-17 中车株洲电力机车研究所有限公司 模拟量自适应采集装置、轨道交通信号采集系统及芯片
US20240048108A1 (en) * 2022-08-05 2024-02-08 Cirrus Logic International Semiconductor Ltd. Beyond-the-rails bootstrapped sampling switch
US11979151B2 (en) 2022-09-20 2024-05-07 Nxp Usa, Inc. Integrated circuit (IC) having an analog multiplexer (MUX)
CN115425958B (zh) * 2022-11-04 2023-02-17 西安水木芯邦半导体设计有限公司 一种用于控制高压模拟开关的栅源电压保持电路
CN116961655B (zh) * 2023-09-21 2023-12-08 电子科技大学 一种应用于高精度adc的斩波采样电路
US12470230B2 (en) 2024-01-23 2025-11-11 Cirrus Logic Inc. Systems and methods for precharging driver circuitry for an analog-to-digital converter

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US20100164597A1 (en) 2008-12-31 2010-07-01 Linear Technology Corporation Bootstrap Transistor Circuit
JP2015065504A (ja) 2013-09-24 2015-04-09 株式会社 日立パワーデバイス 半導体スイッチ回路、信号処理装置、および、超音波診断装置

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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100164597A1 (en) 2008-12-31 2010-07-01 Linear Technology Corporation Bootstrap Transistor Circuit
JP2015065504A (ja) 2013-09-24 2015-04-09 株式会社 日立パワーデバイス 半導体スイッチ回路、信号処理装置、および、超音波診断装置

Also Published As

Publication number Publication date
EP3526898A1 (en) 2019-08-21
EP3526898B1 (en) 2024-08-28
KR20190060755A (ko) 2019-06-03
US10163521B2 (en) 2018-12-25
JP2019530278A (ja) 2019-10-17
CN109643992B (zh) 2023-07-25
TW201826711A (zh) 2018-07-16
CN109643992A (zh) 2019-04-16
US20180102180A1 (en) 2018-04-12
WO2018071479A1 (en) 2018-04-19

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