CN109643685B - 晶片载置台 - Google Patents

晶片载置台 Download PDF

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CN109643685B
CN109643685B CN201780052534.0A CN201780052534A CN109643685B CN 109643685 B CN109643685 B CN 109643685B CN 201780052534 A CN201780052534 A CN 201780052534A CN 109643685 B CN109643685 B CN 109643685B
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metal
thermal expansion
electrostatic chuck
plate
ceramic
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CN109643685A (zh
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赤塚祐司
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/08—Interconnection of layers by mechanical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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Abstract

本发明的静电卡盘加热器(20)是将静电卡盘(22)与冷却板(40)一体化而成的。在静电卡盘(22)的与晶片载置面(22a)相反侧的面设有凹部(28)。低热膨胀系数金属制的带阴螺纹的端子(30)插入至凹部(28)，并通过含有陶瓷微粒和硬钎料的接合层(34)与凹部(28)接合。阳螺纹螺钉(44)插入贯通冷却板(40)的贯通孔(42)，与带阴螺纹的端子(30)螺纹结合。在带阴螺纹的端子(30)与阳螺纹螺钉(44)螺纹结合的状态下，在冷却板(40)因热膨胀差而相对于静电卡盘(22)发生位移时的方向上设有间隙(p)。

Description

晶片载置台
技术领域
本发明涉及晶片载置台。
背景技术
作为用于半导体制造装置的晶片载置台，已知有将内置有静电电极的陶瓷板以及冷却该陶瓷板的金属板接合而成的晶片载置台。例如，专利文献1中，在将陶瓷板与金属板接合时，使用能够吸收二者的热膨胀差的树脂粘合层。
现有技术文献
专利文献
专利文献1：日本特开2014-132560号公报
发明内容
发明要解决的课题
但是，在使用树脂粘合层时，有在高温范围的使用受到限制、或因工艺气体而腐蚀这样的问题。另一方面，还考虑了用螺钉将陶瓷板与金属板直接紧固，但有因紧固时的紧固力、由热膨胀差引起的应力而在陶瓷板产生开裂的危险。
本发明是为了解决这样的课题而提出的，其主要目的在于提供能够耐受在高温范围的使用的晶片载置台。
用于解决课题的方法
本发明的晶片载置台具有：
陶瓷板，其具有晶片载置面，并内置有静电电极和加热电极的至少一方，金属板，其配置于上述陶瓷板中的与上述晶片载置面相反侧的面上，低热膨胀系数金属制的带螺纹的端子，其通过含有陶瓷微粒和硬钎料的接合层而接合于设置在上述陶瓷板中的与上述晶片载置面相反侧的面上的凹部，以及
螺纹部件，其插入贯通上述金属板的贯通孔，并与上述带螺纹的端子螺纹结合，从而将上述陶瓷板与上述金属板紧固；
在上述带螺纹的端子与上述螺纹部件螺纹结合了的状态下，在上述金属板因热膨胀差而相对于上述陶瓷板发生位移时的方向上设有间隙。
该晶片载置台通过带螺纹的端子与螺纹部件进行螺纹结合，从而使陶瓷板与金属板紧固，所述带螺纹的端子接合于设置在陶瓷板的与晶片载置面相反侧的面上的凹部，所述螺纹部件插入贯通金属板且带台阶的贯通孔中。带螺纹的端子由具有低热膨胀系数的金属制造，因而其热膨胀系数是与陶瓷板接近的值。因此，即使是在高温和低温中反复使用的情形，陶瓷板和带螺纹的端子也难以因由热膨胀系数差引起的热应力而产生裂纹等不良状况。此外，如果在陶瓷板的凹部直接设置能与螺纹部件螺纹结合的螺钉，则在与螺纹部件螺纹结合时，陶瓷板有破裂的危险，但这里，由于螺纹部件与接合在陶瓷板上的带螺纹的端子螺纹结合，因而没有那样的危险。进而，带螺纹的端子通过含有陶瓷微粒和硬钎料的接合层接合于陶瓷板的凹部，因而带螺纹的端子与陶瓷板的接合强度足够高。此外，进一步在带螺纹的端子与螺纹部件螺纹结合的状态下，在金属板因热膨胀差而相对于陶瓷板发生位移时的方向上设有间隙。因此，即使是在高温和低温中反复使用的情形，也能通过该间隙吸收由金属板与陶瓷板之间的热膨胀系数差引起的热应力。这样，根据本发明的晶片载置台，能够耐受在高温范围的使用。
需说明的是，本说明书中，低热膨胀系数是指线性热膨胀系数(CTE)在0～300℃时为c×10-6/K(c为3以上且小于10)。
本发明的晶片载置台也可以在上述陶瓷板与上述金属板之间具有非粘合性的热传导片。本发明的晶片载置台中，由于陶瓷板与金属板通过将带螺纹的端子与螺纹部件进行螺纹结合而紧固，因此对于陶瓷板与金属板之间的热传导片不要求粘合性。因此，热传导片的选择自由度提高。例如，在希望提高从陶瓷板向金属板的散热性能时，采用高热传导片即可，相反，在希望抑制散热性能时，采用低热传导片即可。
本发明的晶片载置台中，上述陶瓷微粒是表面被金属被覆的微粒，上述硬钎料可以含有Au、Ag、Cu、Pd、Al或Ni作为基体金属。这样的话，在形成接合层时，熔融的硬钎料变得易于将陶瓷微粒的被金属被覆的表面均匀地润湿铺展。因此，带螺纹的端子与陶瓷板的接合强度更加提高。
本发明的晶片载置台中，上述陶瓷板的材料优选为AlN或Al2O3。上述金属板的材料优选为Al或Al合金。上述低热膨胀系数金属优选为从由Mo、W、Ta、Nb和Ti组成的组中选择的一种，或含有该一种金属的合金(例如W-Cu或Mo-Cu)，或科瓦合金(FeNiCo合金)。
本发明的晶片载置台中，上述带螺纹的端子的线性热膨胀系数优选在上述陶瓷板的线性热膨胀系数的±25％的范围内。这样的话，变得更加易于耐受在高温范围的使用。
附图说明
图1是显示等离子处理装置10的构成概略的说明图。
图2是静电卡盘加热器20的截面图。
图3是图2的由双点划线的圆所包围的部分的放大图。
图4是表示将凹部28与带阴螺纹的端子30接合的工序的说明图。
图5是静电卡盘加热器20的后视图。
图6是其他实施方式的部分放大图。
图7是其他实施方式的部分放大图。
图8是具有精整区域36b的热传导片36的俯视图。
具体实施方式
接着，以下对于作为本发明的晶片载置台的合适的一个实施方式的静电卡盘加热器20进行说明。图1是显示包含静电卡盘加热器20的等离子处理装置10的构成概略的说明图，图2是静电卡盘加热器20的截面图，图3是图2的由双点划线的圆所包围的部分的放大图，图4是表示将凹部28与带阴螺纹的端子30接合的工序的说明图，图5是静电卡盘加热器20的后视图。需说明的是，图4的上下关系与图2相反。
如图1所示，等离子处理装置10在能够调整内压的金属制(例如Al合金制)的真空腔12的内部设置有静电卡盘加热器20和在产生等离子体时使用的上部电极60。在上部电极60中的与静电卡盘加热器20相对的面上，开有多个用于向晶片面供给反应气体的小孔。真空腔12能够将反应气体从反应气体导入通路14导入至上部电极60，并且能够通过与排气通路16连接的真空泵将真空腔12的内压减压至预定的真空度。
静电卡盘加热器20具有能够将要实施等离子处理的晶片W吸附于晶片载置面22a的静电卡盘22和配置于静电卡盘22的背面的冷却板40。需说明的是，在晶片载置面22a的整个面上形成有多个高度为数μm的未图示的突起。载置在晶片载置面22a上的晶片W被支撑于这些突起的上表面。此外，使得在晶片载置面22a中的未设置突起的平面的数个位置导入He气。
静电卡盘22是外径比晶片W的外径小的陶瓷制(例如AlN制或Al2O3制)的平板。如图2所示，在该静电卡盘22中埋设有静电电极24和加热电极26。静电电极24是能够施加直流电压的平面状电极。如果对该静电电极24施加直流电压，则通过库伦力或约翰生·拉别克力将晶片W吸附固定于晶片载置面22a，如果解除直流电压的施加，则晶片W在晶片载置面22a上的吸附固定被解除。加热电极26是以一笔画的要领在整个面上进行图案形成而成的电阻线。如果对该加热电极26施加电压，则加热电极26发热而将晶片载置面22a的整个面加热。加热电极26是线圈状、带状、网状、板状或膜状，例如由W、WC、Mo等形成。能够通过插入冷却板40和静电卡盘22中的未图示的供电部件来对静电电极24、加热电极26施加电压。
在静电卡盘22中的与晶片载置面22a相反侧的面上设有凹部28。凹部28例如是沉孔。在凹部28插入带阴螺纹的端子30。如图3所示，带阴螺纹的端子30与凹部28通过接合层34接合。带阴螺纹的端子30是由低热膨胀系数金属制造的有底筒状的部件，筒状的部分形成为阴螺纹32。低热膨胀系数是指线性热膨胀系数(CTE)在0～300℃时为c×10-6/K(c为3以上且小于10，优选为5以上7以下)。作为低热膨胀系数金属，例如，除了Mo、W、Ta、Nb、Ti等高熔点金属之外，还可列举以这些高熔点金属中的一种为主成分的合金(例如W-Cu、Mo-Cu)、科瓦合金(FeNiCo合金)等。低热膨胀系数金属的CTE优选为与静电卡盘22中所用的陶瓷的CTE同等程度，优选使用该陶瓷的CTE的±25％范围内的金属。这样的话，变得更加易于耐受在高温范围的使用。例如，在静电卡盘22中所用的陶瓷为AlN(4.6×10-6/K(40～400℃))时，优选选择Mo、W作为低热膨胀系数金属。在静电卡盘22中所用的陶瓷为Al2O3(7.2×10-6/K(40～400℃))时，优选选择Mo作为低热膨胀系数金属。
接合层34含有陶瓷微粒和硬钎料。作为陶瓷微粒，可列举Al2O3微粒、AlN微粒等。陶瓷微粒优选通过镀敷、溅射等使表面被金属(例如Ni)被覆。陶瓷微粒的平均粒径没有特别限定，例如为10μm至500μm，优选为20μm至100μm程度。如果平均粒径低于下限，则有时不能充分地得到接合层34的密合性，因而不优选，如果平均粒径高于上限，则不均质性变得显著，因此有时耐热特性等劣化，因而不优选。作为硬钎料，可列举以Au、Ag、Cu、Pd、Al、Ni等金属作为基体的钎料。静电卡盘加热器20的使用环境温度在500℃以下时，适合使用Al系钎料，例如BA4004(Al-10Si-1.5Mg)等作为硬钎料。静电卡盘加热器20的使用环境温度为500℃以上时，适合使用Au、BAu-4(Au-18Ni)、BAg-8(Ag-28Cu)等作为硬钎料。陶瓷微粒相对于硬钎料的填充密度以体积比计优选为30％至90％，更优选为40％至70％。提高陶瓷微粒的填充密度对于降低接合层34的线性热膨胀系数是有利的，但填充密度变得过高时，有时会伴随接合强度的劣化，因此不优选。此外，如果陶瓷微粒的填充密度变得过低，则有接合层34的线性热膨胀系数不充分降低的风险，因此需要注意。陶瓷微粒由于被金属被覆，因此与硬钎料的润湿性良好。作为将陶瓷微粒用金属被覆的方法，可以使用溅射、镀敷等。
作为将带阴螺纹的端子30插入并接合于静电卡盘22的凹部28的方法的一例，首先，如图4的(a)所示，在凹部28的表面基本均匀地铺设陶瓷微粒34a，以将该陶瓷微粒34a的层的至少一部分被覆的方式配置板状或粉体状的硬钎料34b，然后，插入带阴螺纹的端子30。接着，在将带阴螺纹的端子30对于凹部28加压的状态下，加热至预定的温度而使硬钎料34b熔融，浸透至陶瓷微粒34a的层中。如果使用表面被金属被覆的陶瓷微粒作为陶瓷微粒34a，则熔融的硬钎料34b变得易于在陶瓷微粒34a的被金属被覆的表面上均匀地润湿铺展，因而变得易于浸透到陶瓷微粒34a的层中。作为使硬钎料34b熔融的温度，由于需要使所使用的硬钎料34b熔融并浸透到陶瓷微粒34a的层中，因此通常合适的是比该硬钎料34b的熔点高10～150℃的温度，优选比熔点高10～50℃的温度。然后，进行冷却处理。冷却时间适宜地设定即可，例如设定在1小时至10小时的范围。通过这样的处理，如图4的(b)所示，静电卡盘22的凹部28与带阴螺纹的端子30经由接合层34牢固地接合。
冷却板40是金属制(例如Al制或Al合金制)的部件。该冷却板40具有被未图示的外部冷却装置冷却的冷媒(例如水)进行循环的冷媒通路。在冷却板40中的与静电卡盘22的凹部28相对的位置上，设有带台阶42c的贯通孔42。如图5所示，这样的贯通孔42，在从背面观察圆形的冷却板40时，沿着小圆等间隔地设有多个(这里为4个)，沿着大圆等间隔地设有多个(这里为12个)。贯通孔42以台阶42c为界，与静电卡盘22相反侧的部分成为大径部分42a，静电卡盘22侧成为小径部分42b。贯通孔42中插通有阳螺纹螺钉44。作为阳螺纹螺钉44，可以使用例如由不锈钢制作的阳螺纹螺钉。对于阳螺纹螺钉44，在螺钉头部44a与贯通孔42的台阶42c接触的状态下，螺钉脚部44b螺纹结合于带阴螺纹的端子30的阴螺纹32。即，阳螺纹螺钉44以使冷却板40的台阶42c与静电卡盘22的带阴螺纹的端子30间的距离靠近的方式螺纹结合于带阴螺纹的端子30的阴螺纹32。如此操作，静电卡盘22与冷却板40通过带阴螺纹的端子30与阳螺纹螺钉44而紧固。此外，螺钉头部44a的直径比贯通孔42的大径部分小，螺钉脚部44b的直径比贯通孔42的小径部分小。因此，在带阴螺纹的端子30与阳螺纹螺钉44螺纹结合的状态下，在冷却板40因热膨胀差而相对于静电卡盘22发生位移时的方向上设有间隙p(图3中左右方向的间隙)。
热传导片36是由具有耐热性和绝缘性的树脂构成的层，配置于静电卡盘22和冷却板40之间，发挥将静电卡盘22的热传导至冷却板40的作用。该热传导片36不具有粘合性。在热传导片36中的与静电卡盘22的凹部28相对的位置开有贯通孔36a。在希望有效地进行从静电卡盘22向冷却板40的散热时，采用热传导度高的片作为热传导片36。另一方面，在希望抑制从静电卡盘22向冷却板40的散热时，采用热传导度低的片作为热传导片36。作为热传导片36，可列举例如聚酰亚胺片(例如Kapton片(Kapton为注册商标)、Vespel片(Vespel为注册商标))、PEEK片等。由于这样的耐热性高的树脂片通常较硬，因此在用作粘合静电卡盘22和冷却板40的层时，有因静电卡盘22与冷却板40的热膨胀差而产生片剥离、或破损这样的不良状况的危险。本实施方式中，由于使用这样的片作为非粘合状态的热传导片36，因而没有产生这样的不良状况的危险。
接着，对于这样构成的等离子处理装置10的使用例进行说明。首先，在真空腔12内设置静电卡盘加热器20的状态下，将晶片W载置于静电卡盘22的晶片载置面22a。然后，通过真空泵将真空腔12内减压，调整至预定的真空度，对静电卡盘22的静电电极24施加直流电压，产生库伦力或约翰生·拉别克力，将晶片W吸附固定于静电卡盘22的晶片载置面22a。此外，在被晶片载置面22a上的未图示的突起所支撑的晶片W与晶片载置面22a之间导入He气。接着，使真空腔12内成为预定压力(例如数十～数百Pa)的反应气体气氛，在该状态下，在真空腔12内的上部电极60与静电卡盘22的静电电极24之间施加高频电压，产生等离子体。需说明的是，对静电电极24施加用于产生静电力的直流电压和高频电压这二者，但也可以替代静电电极24而对冷却板40施加高频电压。然后，通过所产生的等离子体对晶片W的表面进行蚀刻。晶片W的温度控制在预先设定的目标温度。
这里，明确本实施方式的构成要素与本发明的构成要素的对应关系。本实施方式的静电卡盘加热器20相当于本发明的晶片载置台，静电卡盘22相当于陶瓷板，冷却板40相当于金属板，带阴螺纹的端子30相当于带螺纹的端子，阳螺纹螺钉44相当于螺纹部件。
以上详述的静电卡盘加热器20中，带阴螺纹的端子30由低热膨胀系数金属来制造，因此，其热膨胀系数是与静电卡盘22所使用的陶瓷接近的值。因此，即使在高温和低温中反复使用的情况下，静电卡盘22和带阴螺纹的端子30也难以因热膨胀系数差引起的热应力而产生裂纹等不良状况。此外，如果在静电卡盘22的凹部28直接设置能够与阳螺纹螺钉44螺纹结合的阴螺纹，则在与阳螺纹螺钉44进行螺纹结合时静电卡盘22有破裂的危险，但这里，由于将阳螺纹螺钉44与接合于静电卡盘22的带阴螺纹的端子30进行螺纹结合，因而没有那样的危险。进而，由于带阴螺纹的端子30通过含有陶瓷微粒和硬钎料的接合层34而接合于静电卡盘22的凹部28，因此带阴螺纹的端子30与静电卡盘22的接合的拉伸强度为100kgf以上，是足够高的值(关于这种接合层34，请参考日本专利第3315919号公报、日本专利第3792440号公报、日本专利第3967278号公报)。此外，进一步在带阴螺纹的端子30与阳螺纹螺钉44螺纹结合的状态下，在冷却板40因热膨胀差而相对于静电卡盘22发生位移时的方向上设有间隙p。因此，即使在高温和低温中反复使用的情况下，也能够通过该间隙p吸收因冷却板40与静电卡盘22的热膨胀差引起的位移。例如，图3的点划线表示冷却板40因热膨胀差而相对于静电卡盘22延伸时的状态。在冷却板40相对于静电卡盘22伸缩时，螺钉头部44a能够在台阶42c的面上滑动，螺钉脚部44b能够在贯通孔42的小径部分42b沿图3的左右方向移动，因而静电卡盘22不容易发生破损等。这样，根据上述的静电卡盘加热器20，能够耐受在高温范围的使用。进而，通过将带阴螺纹的端子30接合于凹部28，从而能够防止阳螺纹螺钉44暴露于工艺气氛中而受到腐蚀。
此外，静电卡盘加热器20在静电卡盘22与冷却板40之间具有非粘合性的热传导片36。本实施方式中，由于静电卡盘22和冷却板40通过将带阴螺纹的端子30与阳螺纹螺钉44进行螺纹结合而紧固，因而对于热传导片36不要求粘合性。因此，热传导片36的选择自由度提高。例如，在希望提高从静电卡盘22向冷却板40的散热性能时，采用高热传导片即可，相反，在希望抑制散热性能时，采用低热传导片即可。此外，这样的热传导片36还能起到防止带阴螺纹的端子30、阳螺纹螺钉44暴露于工艺气氛(等离子体等)中的作用。
进而，构成接合层34的陶瓷微粒是表面被金属被覆的微粒，硬钎料含有Au、Ag、Cu、Pd、Al或Ni作为基体金属。因此，带阴螺纹的端子30与静电卡盘22的接合强度更加提高。
需说明的是，本发明不受上述实施方式的任何限定，只要属于本发明的技术范围，就能以各种方式来实施，这是不言而喻的。
例如，在上述的实施方式中，例示了带阴螺纹的端子30和阳螺纹螺钉44，但不特别限定于此。例如，如图6所示，也可以介由接合层34将带阳螺纹的端子130接合于静电卡盘22的凹部28，以使该带阳螺纹的端子130与冷却板40的台阶42c之间的距离靠近的方式通过螺母(阴螺纹)144进行紧固。这种情况下，螺母144的直径比贯通孔42的大径部分42a小，带阳螺纹的端子130的阳螺纹部分130a的直径比贯通孔42的小径部分42b小。因此，在带阳螺纹的端子130与螺母144进行螺纹结合的状态下，在冷却板40因热膨胀差而相对于静电卡盘22发生位移时的方向上设有间隙。因此，根据图6的构成，能够得到与上述实施方式同样的效果。
上述实施方式中，例示了带有台阶42c的贯通孔作为冷却板40的贯通孔42，但不特别限定于此。例如，如图7所示，还可以设置没有台阶的直线形状的贯通孔142，在将阳螺纹螺钉44的螺钉脚部44b与静电卡盘22的带阴螺纹的端子30螺纹结合的状态下，使得螺钉头部44a与冷却板40的下表面接触。在冷却板40相对于静电卡盘22伸缩时，螺钉头部44a能够在冷却板40的下表面上滑动，螺钉脚部44b能够在贯通孔142中沿图7的左右方向移动，因此，静电卡盘22不会发生破损等。因此，根据图7的构成，能够得到与上述实施方式同样的效果。
上述实施方式中，还可以在螺钉头部44a与台阶42c之间夹着垫圈、弹簧。这样的话，带阴螺纹的端子30与阳螺纹螺钉44的螺纹结合状态不易产生松动。同样地，还可以在图6的螺母144与台阶42c之间、图7的螺钉头部44a与冷却板40的下表面之间夹着垫圈、弹簧。
上述实施方式中，热传导片36设为不具有粘合性，但根据需要，也可以使用具有粘合性的热传导片。这种情况下，热传导片36优选具有不因静电卡盘22与冷却板40的热膨胀差所产生的热应力而剥离、或破损的程度的弹性。
上述实施方式中，静电卡盘22设为具有静电电极24和加热电极26这两者，但也可以设为具有其中任一方。
上述实施方式中，还可以对热传导片36部分地进行精整。图8是具有精整区域36b的热传导片36的俯视图。在该精整区域36b设有多个孔。这样的话，能够局部地控制从静电卡盘22(陶瓷板)的散热，能够按照实际的使用环境而容易地调整均热性。因此，能够实现高均热的静电卡盘加热器20。
上述实施方式中，为了确保高真空环境下的密封特性、或防止热传导片的腐蚀，还可以在热传导片36的最外周配置O型圈、金属密封件。
本申请以2016年8月26日申请的日本国专利申请第2016-166086号作为优先权主张的基础，并通过引用将其全部内容包含于本说明书中。
产业上的可利用性
本发明能够用于半导体制造装置。
符号说明
10：等离子处理装置、12：真空腔、14：反应气体导入通路、16：排气通路、20：静电卡盘加热器、22：静电卡盘、22a：晶片载置面、24：静电电极、26：加热电极、28：凹部、30：带阴螺纹的端子、32：阴螺纹、34：接合层、34a：陶瓷微粒、34b：硬钎料、36：热传导片、36a：贯通孔、36b：精整区域、40：冷却板、42：贯通孔、42a：大径部分、42b：小径部分、42c：台阶、44：阳螺纹螺钉、44a：螺钉头部、44b：螺钉脚部、60：上部电极、130：带阳螺纹的端子、130a：阳螺纹部分、142：贯通孔、144：螺母、p：间隙。

Claims (6)

1.一种晶片载置台，具有：
陶瓷板，其具有晶片载置面，并内置有静电电极和加热电极的至少一方，
金属板，其配置于所述陶瓷板中的与所述晶片载置面相反侧的面上，
低热膨胀系数金属制的带螺纹的端子，其通过含有陶瓷微粒和硬钎料的接合层而接合于设置在所述陶瓷板中的与所述晶片载置面相反侧的面上的凹部，以及
螺纹部件，其插入贯通所述金属板的贯通孔，并与所述带螺纹的端子螺纹结合，从而将所述陶瓷板与所述金属板紧固；
在所述带螺纹的端子与所述螺纹部件螺纹结合了的状态下，在所述金属板因热膨胀差而相对于所述陶瓷板发生位移时的方向上设有间隙，
在所述陶瓷板与所述金属板之间具有非粘合性的热传导片，所述热传导片是由树脂构成的层。
2.根据权利要求1所述的晶片载置台，
所述陶瓷微粒是表面被金属被覆的微粒，
所述硬钎料含有Au、Ag、Cu、Pd、Al或Ni作为基体金属。
3.根据权利要求1或2所述的晶片载置台，
所述陶瓷板的材料是AlN或Al2O3，
所述金属板的材料是Al或Al合金，
所述低热膨胀系数金属是从由Mo、W、Ta、Nb和Ti组成的组中选择的一种，或含有该一种金属的合金，或科瓦合金。
4.根据权利要求1或2所述的晶片载置台，
所述带螺纹的端子的线性热膨胀系数在所述陶瓷板的线性热膨胀系数的±25％的范围内。
5.根据权利要求3所述的晶片载置台，
所述带螺纹的端子的线性热膨胀系数在所述陶瓷板的线性热膨胀系数的±25％的范围内。
6.根据权利要求1或2所述的晶片载置台，所述热传导片为聚酰亚胺片或PEEK片。
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