JP7382536B1 - 半導体製造装置用部材 - Google Patents
半導体製造装置用部材 Download PDFInfo
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- JP7382536B1 JP7382536B1 JP2023511948A JP2023511948A JP7382536B1 JP 7382536 B1 JP7382536 B1 JP 7382536B1 JP 2023511948 A JP2023511948 A JP 2023511948A JP 2023511948 A JP2023511948 A JP 2023511948A JP 7382536 B1 JP7382536 B1 JP 7382536B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000000919 ceramic Substances 0.000 claims abstract description 59
- 239000012790 adhesive layer Substances 0.000 claims abstract description 30
- 239000003507 refrigerant Substances 0.000 claims description 23
- 239000002826 coolant Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 54
- 239000000463 material Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000002131 composite material Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000011153 ceramic matrix composite Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
上面にウエハ載置面を有し、電極を内蔵するセラミックプレートと、
前記セラミックプレートを上下方向に貫通するセラミックプレート貫通穴と、
前記セラミックプレートの下面側に設けられた導電性のベースプレートと、
前記ベースプレートを上下方向に貫通するベースプレート貫通穴と、
前記ベースプレート貫通穴に挿入されて外周面が前記ベースプレート貫通穴の内周面に接着層を介して接着された絶縁スリーブと、
前記絶縁スリーブを上下方向に貫通し、前記セラミックプレート貫通穴と連通するスリーブ貫通穴と、
を備えた半導体製造装置用部材であって、
前記絶縁スリーブは、外部ツールと係合可能なツール係合部を有し、
前記ツール係合部は、前記外部ツールに係合されると前記外部ツールの回転トルクを前記絶縁スリーブに伝達する、
ものである。
Claims (6)
- 上面にウエハ載置面を有し、電極を内蔵するセラミックプレートと、
前記セラミックプレートを上下方向に貫通するセラミックプレート貫通穴と、
前記セラミックプレートの下面側に設けられた導電性のベースプレートと、
前記ベースプレートを上下方向に貫通するベースプレート貫通穴と、
前記ベースプレート貫通穴に挿入されて外周面が前記ベースプレート貫通穴の内周面に接着層を介して接着された絶縁スリーブと、
前記絶縁スリーブを上下方向に貫通し、前記セラミックプレート貫通穴と連通するスリーブ貫通穴と、
を備えた半導体製造装置用部材であって、
前記絶縁スリーブは、外部ツールと係合可能なツール係合部を有し、
前記ツール係合部は、前記外部ツールに係合されると前記外部ツールの回転トルクを前記絶縁スリーブに伝達する、
半導体製造装置用部材。 - 前記ベースプレートは、冷媒流路を内蔵し、
前記ツール係合部は、前記冷媒流路の底面よりも下側に設けられている、
請求項1に記載の半導体製造装置用部材。 - 前記接着層の下端は、前記冷媒流路の底面と同じかそれよりも下側で且つ前記ツール係合部よりも上側に位置している、
請求項2に記載の半導体製造装置用部材。 - 前記ツール係合部は、前記スリーブ貫通穴に設けられた雌ネジ部であるか、前記絶縁スリーブの外周面に設けられた雄ネジ部であるか、又は、前記絶縁スリーブの下端から上下方向に沿って設けられた複数のスリット溝である、
請求項1~3のいずれか1項に記載の半導体製造装置用部材。 - 前記ツール係合部を前記ウエハ載置面と平行な面で切断したときの前記スリーブ貫通穴の断面は、多角形であるか、円に凸部又は凹部を設けた形状であるか、又は、円を2つの平行な弦で切り取った形状である、
請求項1~3のいずれか1項に記載の半導体製造装置用部材。 - 前記ツール係合部を前記ウエハ載置面と平行な面で切断したときの前記絶縁スリーブの断面の外形形状は、多角形であるか、円に凸部又は凹部を設けた形状であるか、又は、円を2つの平行な弦で切り取った形状である、
請求項1~3のいずれか1項に記載の半導体製造装置用部材。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2022/028748 WO2024023919A1 (ja) | 2022-07-26 | 2022-07-26 | 半導体製造装置用部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP7382536B1 true JP7382536B1 (ja) | 2023-11-16 |
JPWO2024023919A5 JPWO2024023919A5 (ja) | 2024-07-02 |
Family
ID=88729209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2023511948A Active JP7382536B1 (ja) | 2022-07-26 | 2022-07-26 | 半導体製造装置用部材 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20240038567A1 (ja) |
JP (1) | JP7382536B1 (ja) |
KR (1) | KR20240016239A (ja) |
WO (1) | WO2024023919A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013191626A (ja) | 2012-03-12 | 2013-09-26 | Ngk Insulators Ltd | 半導体製造装置及びその製法 |
WO2018216797A1 (ja) | 2017-05-25 | 2018-11-29 | 日本碍子株式会社 | ウエハ用サセプタ |
WO2019131115A1 (ja) | 2017-12-28 | 2019-07-04 | 住友大阪セメント株式会社 | 静電チャック装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5739924A (en) * | 1980-08-22 | 1982-03-05 | Idemitsu Kosan Co Ltd | Molding method for insert |
JP3154629B2 (ja) | 1994-11-24 | 2001-04-09 | キヤノン株式会社 | 電子写真感光体およびこれを用いた電子写真装置、装置ユニット |
-
2022
- 2022-07-26 WO PCT/JP2022/028748 patent/WO2024023919A1/ja unknown
- 2022-07-26 JP JP2023511948A patent/JP7382536B1/ja active Active
- 2022-07-26 KR KR1020237006130A patent/KR20240016239A/ko unknown
-
2023
- 2023-02-16 US US18/170,129 patent/US20240038567A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013191626A (ja) | 2012-03-12 | 2013-09-26 | Ngk Insulators Ltd | 半導体製造装置及びその製法 |
WO2018216797A1 (ja) | 2017-05-25 | 2018-11-29 | 日本碍子株式会社 | ウエハ用サセプタ |
WO2019131115A1 (ja) | 2017-12-28 | 2019-07-04 | 住友大阪セメント株式会社 | 静電チャック装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202406002A (zh) | 2024-02-01 |
KR20240016239A (ko) | 2024-02-06 |
WO2024023919A1 (ja) | 2024-02-01 |
US20240038567A1 (en) | 2024-02-01 |
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