TW202406002A - 半導體製造裝置用構件 - Google Patents
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Abstract
本發明提供一種半導體製造裝置用構件,晶圓載置台10為半導體製造裝置用構件的一例,具備陶瓷板20、陶瓷板貫通孔24、底板30、底板貫通孔34、絕緣套筒50、及套筒貫通孔54。套筒貫通孔54,將絕緣套筒50沿上下方向貫通,與陶瓷板貫通孔24連通。絕緣套筒50,藉由黏接層60而與底板貫通孔34黏接。絕緣套筒50,具備可與外部工具卡合之工具卡合部(內螺紋部52)。工具卡合部,若與外部工具卡合,即將外部工具的轉動力矩傳達給絕緣套筒50。
Description
本發明係關於一種半導體製造裝置用構件。
過去,已知一種半導體製造裝置用構件,具備內設有電極的陶瓷板、及設置於陶瓷板之底面側的導電性底板。例如,於專利文獻1揭露,在此等半導體製造裝置用構件中,具備:陶瓷板貫通孔,將陶瓷板沿厚度方向貫通;底板貫通孔,將底板沿厚度方向貫通;以及絕緣套筒,插入至底板貫通孔,外周面藉由黏接層而黏接至底板貫通孔的內周面。
[習知技術文獻]
[專利文獻]
專利文獻1:日本登錄實用新案第3154629號公報
[本發明所欲解決的問題]
然則,若長時間使用此等半導體製造裝置用構件,則有底板貫通孔與絕緣套筒之間的黏接劑腐蝕劣化而有所消耗之情形。黏接劑消耗掉之半導體製造裝置用構件,多為若更換黏接劑則可再度使用。黏接劑之更換,需先將絕緣套筒卸下而再度進行黏接。然而,卸下絕緣套筒之作業的難易度高,有作業時造成陶瓷板或底板破損之疑慮。
為了解決此等問題,本發明之主要目的在於可將絕緣套筒簡單地卸下。
[解決問題之技術手段]
[1]本發明之半導體製造裝置用構件,具備:
陶瓷板,於頂面具有晶圓載置面,內設有電極;
陶瓷板貫通孔,將該陶瓷板沿上下方向貫通;
導電性之底板,設置於該陶瓷板之底面側;
底板貫通孔,將該底板沿上下方向貫通;
絕緣套筒,插入至該底板貫通孔,外周面藉由黏接層而與該底板貫通孔之內周面黏接;以及
套筒貫通孔,將該絕緣套筒沿上下方向貫通,與該陶瓷板貫通孔連通;
該絕緣套筒,具備可與外部工具卡合之工具卡合部;
該工具卡合部若與該外部工具卡合,即將該外部工具的轉動力矩傳達給該絕緣套筒。
在此半導體製造裝置用構件中,絕緣套筒,具備可與外部工具卡合之工具卡合部。工具卡合部,若與外部工具卡合,即將外部工具的轉動力矩傳達給絕緣套筒。在將絕緣套筒從底板貫通孔取下時,將外部工具與工具卡合部卡合。若旋轉該外部工具,則藉由其轉動力矩將黏接層切斷。因此,可將絕緣套筒從底板貫通孔簡單地卸下。
[2]於本發明之半導體製造裝置用構件(上述[1]記載之半導體製造裝置用構件)中,亦可於該底板,內設有冷媒流路;亦可將該工具卡合部,設置於較該冷媒流路之底面更為下側。若將工具卡合部設置於較冷媒流路之底面更為上側,則有工具卡合部的形狀對晶圓的均熱性造成影響之情形,但此處由於工具卡合部設置於較冷媒流路之底面更為下側,故此等影響減少。
[3]於本發明之半導體製造裝置用構件(該[2]記載之半導體製造裝置用構件)中,亦可使該黏接層之下端,位於與該冷媒流路之底面相同高度的位置,或較其更下側且較該工具卡合部更上側的位置。若使黏接層之下端位於與冷媒流路之底面相同高度的位置,或較其更為下側的位置,則來自陶瓷板的熱經由黏接層而效率良好地傳遞給冷媒流路。此外,若黏接層之下端位於較工具卡合部更為上側,則黏接層為少量即可,容易將絕緣套筒從底板貫通孔取下。
[4]於本發明之半導體製造裝置用構件(上述[1]~[3]中任一項記載之半導體製造裝置用構件)中,該工具卡合部,亦可為設置於該套筒貫通孔的內螺紋部,或亦可為設置於該絕緣套筒之外周面的外螺紋部,或亦可為從該絕緣套筒之下端起沿著上下方向設置的複數條狹縫溝。工具卡合部為外螺紋部之情況,作為外部工具,利用內螺紋件即可。工具卡合部為內螺紋部之情況,作為外部工具,利用外螺紋件即可。工具卡合部為狹縫溝之情況,作為外部工具,例如利用具有可插入至複數條狹縫溝之至少2條插入部的工具即可。
[5]於本發明之半導體製造裝置用構件(上述[1]~[3]中任一項記載之半導體製造裝置用構件)中,將該工具卡合部在與該晶圓載置面平行之面切斷時的該套筒貫通孔之剖面,亦可呈多角形,或亦可呈於圓形設有凸部或凹部的形狀,或亦可呈將圓形在2條平行之弦切取出的形狀。工具卡合部為剖面呈既定形狀(多角形、或於圓形設有凸部或凹部的形狀、或將圓形在2條平行之弦切取出的形狀)的孔之情況,作為外部工具,例如利用與該既定形狀嵌合之工具即可。
[6]於本發明之半導體製造裝置用構件(上述[1]~[3]中任一項記載之半導體製造裝置用構件)中,將該工具卡合部在與該晶圓載置面平行之面切斷時的該絕緣套筒之剖面的外形形狀,亦可呈多角形,或亦可呈於圓形設有凸部或凹部的形狀,或亦可呈將圓形在2條平行之弦切取出的形狀。工具卡合部具有剖面呈既定形狀(多角形、或於圓形設有凸部或凹部的形狀、或將圓形在2條平行之弦切取出的形狀)之外形的情況,作為外部工具,例如利用與該既定形狀嵌合之工具即可。
接著,利用圖式,針對本發明之較佳實施形態予以說明。圖1係晶圓載置台10的俯視圖,圖2係圖1的A-A剖面圖,圖3係圖2的部分放大圖(一點鏈線之框內的放大圖),圖4係絕緣套筒50的說明圖(圖4A為俯視圖,圖4B為前視圖,圖4C為底視圖)。另,於本說明書中,「上」「下」並非表示絶對的位置關係,而係表示相對的位置關係。因此,依晶圓載置台10之朝向,有「上」「下」成為「下」「上」、或成為「左」「右」、或成為「前」「後」等情形。
晶圓載置台10為本發明之半導體製造裝置用構件的一例,如圖2所示,具備陶瓷板20、底板30、接合層40、絕緣套筒50、黏接層60、及氣體孔70。
陶瓷板20為氧化鋁燒結體或氮化鋁燒結體等陶瓷製的圓板(例如直徑300mm、厚度5mm)。陶瓷板20之頂面,成為載置晶圓W之晶圓載置面21。陶瓷板20,從晶圓載置面21起,以由近至遠的順序內設有靜電電極22及加熱器電極23。於陶瓷板20之晶圓載置面21,如圖1所示,沿著外緣形成環狀的密封條21a;在密封條21a之內側的全表面,形成複數個圓形小突起21b。密封條21a與圓形小突起21b為相同高度,其高度例如為數μm~數10μm。將晶圓載置面21中之未設置密封條21a或圓形小突起21b的部分,稱作基準面21c。
靜電電極22為平面狀的網格電極,經由未圖示之供電構件而與外部之直流電源相連接。供電構件,與接合層40及底板30電性絕緣。若對靜電電極22施加直流電壓,則晶圓W藉由靜電吸附力而吸附固定在晶圓載置面21(具體而言,密封條21a之頂面及圓形小突起21b之頂面);若解除直流電壓的施加,則晶圓W之對晶圓載置面21的吸附固定解除。
加熱器電極23為電阻發熱體,俯視時涵蓋陶瓷板20之全體而從一端一筆劃地配線至另一端。於加熱器電極23之一端與另一端,經由未圖示的供電構件而連接加熱器電源。供電構件,與接合層40及底板30電性絕緣。加熱器電極23,若通電則發熱,將晶圓載置面21及晶圓W加熱。
底板30為導電率及熱傳導率良好的圓板(例如,直徑與陶瓷板20相同或較其更大的圓板,厚度為20~40mm)。於底板30之內部,形成使冷媒循環的冷媒流路32。在冷媒流路32流通之冷媒宜為液體,宜具有電氣絕緣性。作為電氣絕緣性之液體,例如可列舉氟系惰性液體等。冷媒流路32,俯視時涵蓋底板30之全體而從一端(入口)一筆劃地形成至另一端(出口)。於冷媒流路32之一端及另一端,分別連接未圖示的外部冷媒裝置之供給口及回收口。從外部冷媒裝置之供給口供給至冷媒流路32之一端的冷媒,通過冷媒流路32後,從冷媒流路32之另一端返回外部冷媒裝置之回收口,經過溫度調整後再度從供給口供給至冷媒流路32之一端。底板30與射頻(RF)電源連接,亦作為射頻電極使用。
底板30之材料,例如可列舉金屬材料、或金屬與陶瓷之複合材料等。作為金屬材料,可列舉Al、Ti、Mo或其等之合金等。作為金屬與陶瓷之複合材料,可列舉金屬基複合材料(metal matrix composite, MMC)或陶瓷基複合材料(ceramic matrix composites, CMC)等。作為此等複合材料的具體例,可列舉含有Si、SiC及Ti之材料(亦稱作SiSiCTi),或將Al及/或Si浸漬於SiC多孔質體之材料,或Al
2O
3與TiC之複合材料等。作為底板30之材料,宜選擇熱膨脹係數與陶瓷板20之材料接近者。
接合層40,此處為金屬製,將陶瓷板20之底面與底板30之頂面接合。接合層40,例如藉由TCB(Thermal compression bonding, 熱壓接合)形成。TCB,係指將金屬接合材夾入作為接合對象的2個構件之間,在加熱至金屬接合材的固相線溫度以下之溫度的狀態下將2個構件加壓接合之公知方法。
絕緣套筒50,收納於底板貫通孔34。底板貫通孔34為將底板30沿上下方向貫通的孔,設置為冷媒流路32並未貫通。絕緣套筒50之上端面50a,進入至將金屬製之接合層40沿上下方向貫通的接合層貫通孔44。絕緣套筒50之下端面50b,與底板30之底面為幾近相同的高度。絕緣套筒50,係以電氣絕緣性材料(例如與陶瓷板20為相同材料)製作出之略圓柱狀的構件;絕緣套筒50具有套筒貫通孔54,其沿著絕緣套筒50之中心軸將絕緣套筒50沿上下方向貫通。絕緣套筒50之外周面50c,藉由黏接層60而與底板貫通孔34之內周面黏接。作為黏接層60之材料,例如可列舉環氧樹脂、丙烯樹脂、矽氧樹脂等絕緣性樹脂。黏接層60,亦充填於絕緣套筒50的外周面50c與接合層貫通孔44的內周面之間,進一步亦進入至絕緣套筒50的上端面50a與陶瓷板20的底面之間。黏接層60之下端,位於與冷媒流路32之底面32a相同的位置,或較其更下側的位置。
絕緣套筒50具備內螺紋部52,其作為可與後述重製修復工具90卡合之工具卡合部。內螺紋部52,設置於套筒貫通孔54中的較冷媒流路32之底面32a更為下側。內螺紋部52,若與重製修復工具90卡合,即將重製修復工具90的轉動力矩傳達給絕緣套筒50。黏接層60之下端,位於較內螺紋部52更為上側的位置。
氣體孔70,以陶瓷板貫通孔24及套筒貫通孔54構成。陶瓷板貫通孔24,將陶瓷板20沿上下方向(厚度方向)貫通。陶瓷板貫通孔24,於晶圓載置面21的基準面21c開口。於陶瓷板貫通孔24之內周面,並未使靜電電極22、加熱器電極23露出。亦即,陶瓷板貫通孔24之內周面,以陶瓷覆蓋。套筒貫通孔54,與陶瓷板貫通孔24連通。氣體孔70,使用在熱傳導氣體之對晶圓載置面21的供給。另,在本實施形態中,位於陶瓷板20的底面與絕緣套筒50的上端面50a之間的黏接層60之開口部64,亦構成氣體孔70的一部分。
接著,依據圖5,針對晶圓載置台10之製造方法的一例予以說明。圖5係晶圓載置台10的製程圖。
首先,準備陶瓷板20、底板30及金屬接合材80(圖5A)。陶瓷板20,內設有靜電電極22及加熱器電極23,具備陶瓷板貫通孔24。底板30,內設有冷媒流路32,具備底板貫通孔34。金屬接合材80,在與底板30之底板貫通孔34相對向的位置具有接合材貫通孔84。接合材貫通孔84之直徑,與底板貫通孔34之直徑相同或較其略大。將金屬接合材80夾入至底板30的頂面與陶瓷板20的底面之間,使其成為疊層體。此時,將底板貫通孔34、接合材貫通孔84、陶瓷板貫通孔24對位而使其等連通。
而後,以金屬接合材80的固相線溫度以下(例如,由固相線溫度減去20℃之溫度以上、固相線溫度以下)之溫度將疊層體加壓接合(TCB),其後使其回到室溫。藉此,藉由金屬接合材80所變化出的接合層40,將陶瓷板20與底板30接合(圖5B)。作為金屬接合材80,可使用Al-Mg系接合材或Al-Si-Mg系接合材。
而後,準備絕緣套筒50。接著,於絕緣套筒50之上端面50a及外周面50c塗布黏接劑65,由絕緣套筒50之上端面50a插入至底板貫通孔34(圖5B)。另,在圖5B雖顯示從底板30下方將絕緣套筒50插入的樣子,但亦可將圖5B的疊層體之上下翻轉,從底板30上方將絕緣套筒50插入。
其後,若黏接劑65硬化則成為黏接層60,獲得晶圓載置台10(圖5C)。
接著,針對如此地構成之晶圓載置台10的使用例予以說明。首先,在將晶圓載置台10設置於未圖示的腔室內之狀態下,於晶圓載置面21載置晶圓W。而後,藉由真空泵將腔室內減壓,調整成為既定的真空度,對陶瓷板20之靜電電極22施加直流電壓以產生靜電吸附力,將晶圓W吸附固定在晶圓載置面21(具體而言,密封條21a之頂面、圓形小突起21b之頂面)。此外,對加熱器電極23通電而使陶瓷板20發熱,將晶圓W加熱為既定溫度。進一步,由未圖示的氣體缸筒,將背面氣體導入構成氣體孔70之套筒貫通孔54。作為背面氣體,使用熱傳導氣體(例如He氣體等)。導入至氣體孔70之背面氣體,充填而封入至晶圓W的背面與晶圓載置面21的基準面21c之間的空間(以晶圓W的背面,以及晶圓載置面21的密封條21a、圓形小突起21b及基準面21c包圍的空間)。藉由此等背面氣體的存在,效率良好地施行晶圓W與陶瓷板20的熱傳導。接著,使腔室內成為既定壓力(例如數10~數100Pa)之反應氣體環境,在此一狀態下,對設置於腔室內的頂棚部分之未圖示的上部電極與晶圓載置台10的底板30之間施加射頻電壓,產生電漿。藉由產生之電漿,將晶圓W的正面進行處理。於底板30之冷媒流路32,適時使冷媒循環。
若長時間使用晶圓載置台10,則有黏接層60腐蝕劣化而有所消耗的情形。此時,晶圓載置台10之其他零件,大多仍可使用。此一情況,實施黏接層60的重製修復,使晶圓載置台10成為可再度使用之狀態。圖6係將絕緣套筒50從底板貫通孔34卸下之作業的步驟圖。首先,準備重製修復工具(外部工具)90。重製修復工具90為在能夠以手握持的握把92安裝有細長之軸94的工具,於軸94的前端具有外螺紋部94a。作業者,握住重製修復工具90的握把92,將重製修復工具90的外螺紋部94a鎖入至絕緣套筒50的工具卡合部即內螺紋部52(圖6A)。而後,作業者,對握把92施加與鎖入之方向為相同方向的力(圖6B)。如此一來,則內螺紋部52,將重製修復工具90的轉動力矩傳達給絕緣套筒50。藉此,絕緣套筒50與重製修復工具90成為一體而旋轉,故藉由此一旋轉力將黏接層60切斷。其後,作業者,將與重製修復工具90成為一體的絕緣套筒50從底板貫通孔34抽出(圖6C)。而後,將底板貫通孔34及絕緣套筒50清潔後,於絕緣套筒50塗布黏接劑,插入至底板貫通孔34,使黏接劑固化。藉此,使晶圓載置台10成為可再度使用之狀態。
在以上詳述之晶圓載置台10中,絕緣套筒50具備內螺紋部52,其作為可與重製修復工具90卡合之工具卡合部。內螺紋部52,若與重製修復工具90卡合,則將重製修復工具90的轉動力矩傳達給絕緣套筒50。在將絕緣套筒50從底板貫通孔34取下時,將重製修復工具90的外螺紋部94a,與內螺紋部52卡合。若旋轉該重製修復工具90,則藉由其轉動力矩將黏接層60切斷。因此,可將絕緣套筒50從底板貫通孔34簡單地卸下。
此外,若將內螺紋部52設置於較冷媒流路32之底面32a更為上側,則有內螺紋部52的形狀對晶圓W的均熱性造成影響之情形,但此處由於內螺紋部52設置於較冷媒流路32之底面32a更為下側,故此等影響減少。
進一步,黏接層60之下端,位於與冷媒流路32之底面32a相同高度的位置,或較其更下側的位置。因此,來自陶瓷板20的熱藉由黏接層60而效率良好地傳遞給冷媒流路32。此外,黏接層60之下端,位於較內螺紋部52更為上側。因此,黏接層60為少量即可,容易將絕緣套筒50從底板貫通孔34取下。
此外,接合層40之材料為金屬,故與樹脂相較,減少腐蝕劣化。因此,構成晶圓載置台10之各種零件中的絕緣套筒50與底板貫通孔34之間的黏接層60之使用壽命,容易成為最短。因而,在接合層40為金屬製的情況,應用本發明之效益更高。
另,本發明並未受到上述實施形態之任何限定,若屬於本發明之技術範圍,自然能夠以各種態樣實施。
上述實施形態中,作為工具卡合部雖例示具備內螺紋部52的絕緣套筒50,但並未限定於此一形態。例如,亦可取代絕緣套筒50,採用圖7~圖11所示的絕緣套筒150、250、350、450、550。圖7A~圖11A為俯視圖,圖7B~圖11B為前視圖,圖7C~圖11C為底視圖。圖7~圖11中,對於與上述實施形態的絕緣套筒50相同之構成要素,給予相同符號。
圖7所示的絕緣套筒150,於套筒貫通孔54具備工具卡合部152。工具卡合部152,使套筒貫通孔54中的從絕緣套筒150之下端面50b起至既定高度的區間之水平剖面,成為兩側倒角形狀(將圓形在2條平行之弦切取出的形狀)。水平剖面,係於圖2中在與晶圓載置面21平行之面切斷時的剖面。既定高度,係以將絕緣套筒150黏接至底板貫通孔34時使工具卡合部152之上端較冷媒流路32之底面32a成為更低的方式決定。此一情況,作為重製修復工具,利用與工具卡合部152嵌合之工具即可。此外,在將絕緣套筒150從底板貫通孔34抽出時,將其他工具抵緊工具卡合部152之內面(或套筒貫通孔54之內面)而抽出即可。另,於圖7中,亦可取代使水平剖面成為兩側倒角形狀,而使其呈多角形(例如四角形、五角形、六角形等)。
圖8所示的絕緣套筒250,於套筒貫通孔54具備工具卡合部252。工具卡合部252,使套筒貫通孔54中的從絕緣套筒250之下端面50b起至既定高度的區間之水平剖面,成為於圓形設有凸部的形狀。既定高度,係以將絕緣套筒250黏接至底板貫通孔34時使工具卡合部252之上端較冷媒流路32之底面32a成為更低的方式決定。此一情況,作為重製修復工具,利用與工具卡合部252嵌合之工具即可。此外,在將絕緣套筒250從底板貫通孔34抽出時,將其他工具抵緊工具卡合部252之內面(或套筒貫通孔54之內面)而抽出即可。另,於圖8中,亦可取代使水平剖面呈於圓形設有凸部的形狀,而使其呈於圓形設有凹部的形狀。
圖9所示的絕緣套筒350,從下端面50b起至既定高度沿著上下方向具有2條狹縫溝352。此2條狹縫溝352相當於工具卡合部。既定高度,係以將絕緣套筒350黏接至底板貫通孔34時使狹縫溝352之上端較冷媒流路32之底面32a成為更低的方式決定。此一情況,作為重製修復工具,利用與2條狹縫溝352嵌合之工具即可。此外,在將絕緣套筒350從底板貫通孔34抽出時,將其他工具抵緊套筒貫通孔54之內面而抽出即可。
圖10所示的絕緣套筒450,於絕緣套筒450之外周面中的從下端面50b起至既定高度之區間具有外螺紋部452。此外螺紋部452相當於工具卡合部。既定高度,係以將絕緣套筒450黏接至底板貫通孔34時使外螺紋部452之上端較冷媒流路32之底面32a成為更低的方式決定。此一情況,作為重製修復工具,利用具有可與外螺紋部452螺合之內螺紋部的工具即可。在將絕緣套筒450從底板貫通孔34抽出時,將與外螺紋部452螺合的工具直接抽出即可。
圖11所示的絕緣套筒550,於外周面具備工具卡合部552。工具卡合部552,係使絕緣套筒550之外周面中的從下端面50b起至既定高度之區間成為水平剖面呈兩側倒角形狀的部分。既定高度,係以將絕緣套筒550黏接至底板貫通孔34時使工具卡合部552之上端較冷媒流路32之底面32a成為更低的方式決定。此一情況,作為重製修復工具,利用將工具卡合部552夾住的工具(例如尖嘴鉗或鑷子)即可。此外,在將絕緣套筒550從底板貫通孔34抽出時,維持以該工具夾住工具卡合部552而直接抽出即可。另,於圖11中,亦可取代使水平剖面呈兩側倒角形狀,而使其呈多角形(例如四角形、五角形、六角形等)。
圖12係圖11的絕緣套筒550之變形例,圖12A為俯視圖,圖12B為前視圖,圖12C為底視圖。在圖12的絕緣套筒550中,於兩側倒角形狀的工具卡合部552之平面部,設置朝向上方的段差面552a。如此一來,則在將絕緣套筒550從底板貫通孔34抽出時,可使用前端呈鉤形的工具(例如尖嘴鉗或鑷子,參考圖12之一點鏈線),將鉤形之前端勾卡在段差面552a而簡單地抽出。
另,將工具卡合部設置於絕緣套筒之外周面的情況,需將重製修復工具插入至絕緣套筒之外周面,故宜使黏接層之下端位於較工具卡合部更為上側。此外,工具卡合部並非為螺紋構造之情況,亦可於工具卡合部設置朝向上方的段差面(例如參考圖12)。如此一來,若將外部工具勾卡在朝向上方的段差面,則容易將絕緣套筒從底板貫通孔抽出。
上述實施形態中,雖例示金屬製的接合層40,但並未限定於此一形態。例如亦可使接合層40為樹脂製。作為樹脂,例如可列舉環氧樹脂、丙烯樹脂、矽氧樹脂等絕緣性樹脂。使接合層40為樹脂製之情況,容易腐蝕劣化發展,因而宜在陶瓷板20的底面、底板30的頂面、及接合層40的外周面之間形成環狀的空間,於該空間配置犠牲環。如此一來,則藉由犠牲環保護樹脂製的接合層40。此外,在犠牲環腐蝕劣化之情況,更換犠牲環即可。
上述實施形態中,雖於陶瓷板20內設有靜電電極22及加熱器電極23,但並未限定於此一形態。例如,亦可於陶瓷板20,僅內設有靜電電極22及加熱器電極23之任一方。抑或,亦可將加熱器電極23沿著厚度方向內設二層或更多層。
上述實施形態中,將陶瓷板貫通孔24及套筒貫通孔54利用作為氣體孔70,但並未限定於此一形態。例如,亦可將陶瓷板貫通孔24及套筒貫通孔54利用作為升降銷孔。升降銷孔,係使晶圓W對於晶圓載置面21上下移動之升降銷貫穿所用的孔。升降銷孔,在例如以3根升降銷支持晶圓W的情況,設置於3處。
[產業上利用性]
本發明之半導體製造裝置用構件,例如可利用在藉由電漿等處理晶圓的領域。
10:晶圓載置台
20:陶瓷板
21:晶圓載置面
21a:密封條
21b:圓形小突起
21c:基準面
22:靜電電極
23:加熱器電極
24:陶瓷板貫通孔
30:底板
32:冷媒流路
32a:底面
34:底板貫通孔
40:接合層
44:接合層貫通孔
50:絕緣套筒
50a:上端面
50b:下端面
50c:外周面
52:內螺紋部
54:套筒貫通孔
60:黏接層
64:開口部
65:黏接劑
70:氣體孔
80:金屬接合材
84:接合材貫通孔
90:重製修復工具(外部工具)
92:握把
94:軸
94a:外螺紋部
150,250,350,450,550:絕緣套筒
152,252,552:工具卡合部
352:狹縫溝
452:外螺紋部
552a:段差面
W:晶圓
圖1係晶圓載置台10的俯視圖。
圖2係圖1的A-A剖面圖。
圖3係圖2的部分放大圖。
圖4(A)~(C)係絕緣套筒50的說明圖。
圖5(A)~(C)係晶圓載置台10的製程圖。
圖6(A)~(C)係將絕緣套筒50從底板貫通孔34卸下之作業的步驟圖。
圖7(A)~(C)係絕緣套筒150的說明圖。
圖8(A)~(C)係絕緣套筒250的說明圖。
圖9(A)~(C)係絕緣套筒350的說明圖。
圖10(A)~(C)係絕緣套筒450的說明圖。
圖11(A)~(C)係絕緣套筒550的說明圖。
圖12(A)~(C)係絕緣套筒550之其他例的說明圖。
10:晶圓載置台
20:陶瓷板
21:晶圓載置面
22:靜電電極
23:加熱器電極
24:陶瓷板貫通孔
30:底板
32:冷媒流路
32a:底面
34:底板貫通孔
40:接合層
44:接合層貫通孔
50:絕緣套筒
50a:上端面
50b:下端面
50c:外周面
52:內螺紋部
54:套筒貫通孔
60:黏接層
64:開口部
70:氣體孔
Claims (6)
- 一種半導體製造裝置用構件,包含: 陶瓷板,於頂面具有晶圓載置面,內設有電極; 陶瓷板貫通孔,將該陶瓷板沿上下方向貫通; 導電性之底板,設置於該陶瓷板之底面側; 底板貫通孔,將該底板沿上下方向貫通; 絕緣套筒,插入至該底板貫通孔,其外周面藉由黏接層而與該底板貫通孔之內周面黏接;以及 套筒貫通孔,將該絕緣套筒沿上下方向貫通,且與該陶瓷板貫通孔連通; 該絕緣套筒,具備可與外部工具卡合之工具卡合部; 該工具卡合部若與該外部工具卡合,則將該外部工具的轉動力矩傳達給該絕緣套筒。
- 如請求項1之半導體製造裝置用構件,其中, 該底板,內設有冷媒流路; 該工具卡合部,設置於較該冷媒流路之底面更為下側。
- 如請求項2之半導體製造裝置用構件,其中, 該黏接層之下端,位於與該冷媒流路之底面相同高度的位置,或較其更下側且較該工具卡合部更上側的位置。
- 如請求項1至3中任一項之半導體製造裝置用構件,其中, 該工具卡合部,為設置於該套筒貫通孔的內螺紋部,或為設置於該絕緣套筒之外周面的外螺紋部,或為從該絕緣套筒之下端起沿著上下方向設置的複數條狹縫溝。
- 如請求項1至3中任一項之半導體製造裝置用構件,其中, 將該工具卡合部在與該晶圓載置面平行之面切斷時的該套筒貫通孔之剖面,呈多角形,或呈於圓形設有凸部或凹部的形狀,或呈將圓形在2條平行之弦切取出的形狀。
- 如請求項1至3中任一項之半導體製造裝置用構件,其中, 將該工具卡合部在與該晶圓載置面平行之面切斷時的該絕緣套筒之剖面的外形形狀,呈多角形,或呈於圓形設有凸部或凹部的形狀,或呈將圓形在2條平行之弦切取出的形狀。
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