JP6420937B1 - ウエハ用サセプタ - Google Patents
ウエハ用サセプタ Download PDFInfo
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- JP6420937B1 JP6420937B1 JP2018544132A JP2018544132A JP6420937B1 JP 6420937 B1 JP6420937 B1 JP 6420937B1 JP 2018544132 A JP2018544132 A JP 2018544132A JP 2018544132 A JP2018544132 A JP 2018544132A JP 6420937 B1 JP6420937 B1 JP 6420937B1
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- insulating tube
- plate
- screw hole
- wafer
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- 238000007789 sealing Methods 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 9
- 238000001816 cooling Methods 0.000 abstract description 40
- 239000007789 gas Substances 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
ウエハを吸着可能なセラミックス製のプレートと、
前記プレートの前記ウエハを載置する面とは反対側の面に取り付けられた導電性部材と、
前記プレート及び前記導電性部材を貫通する貫通孔と、
前記貫通孔のうち前記導電性部材を貫通する導電性部材貫通部分に設けられたネジ穴と、
前記導電性部材に設けられ、前記ネジ穴の中心軸と交叉するストッパ面と、
前記ストッパ面に当接する当接面を有し、前記ネジ穴に螺合された絶縁管と、
前記絶縁管のプレート対向面に突状に設けられたシール部材支持部に挿通され、前記絶縁管のプレート対向面と前記プレートとの間に配置された絶縁性のシール部材と、
を備え、
前記絶縁管は、前記絶縁管の前記当接面が前記導電性部材の前記ストッパ面に突き当たることにより、前記ネジ穴へそれ以上進入するのを阻止されて、前記絶縁管の前記シール部材支持部の先端面が前記プレートと接触しない所定位置で位置決めされると共に前記シール部材が前記絶縁管の前記プレート対向面と前記プレートとの間で加圧される、
ものである。
Claims (7)
- ウエハを吸着可能なセラミックス製のプレートと、
前記プレートの前記ウエハを載置する面とは反対側の面に取り付けられた導電性部材と、
前記プレート及び前記導電性部材を貫通する貫通孔と、
前記貫通孔のうち前記導電性部材を貫通する導電性部材貫通部分に設けられたネジ穴と、
前記導電性部材に設けられ、前記ネジ穴の中心軸と交叉するストッパ面と、
前記ストッパ面に当接する当接面を有し、前記ネジ穴に螺合された絶縁管と、
前記絶縁管のプレート対向面に突状に設けられたシール部材支持部に挿通され、前記絶縁管のプレート対向面と前記プレートとの間に配置された絶縁性のシール部材と、
を備え、
前記絶縁管は、前記絶縁管の前記当接面が前記導電性部材の前記ストッパ面に突き当たることにより、前記ネジ穴へそれ以上進入するのを阻止されて、前記絶縁管の前記シール部材支持部の先端面が前記プレートと接触しない所定位置で位置決めされると共に前記シール部材が前記絶縁管の前記プレート対向面と前記プレートとの間で加圧されている、
ウエハ用サセプタ。 - 前記絶縁管の前記シール部材支持部の先端面は、前記加圧された前記シール部材の断面の中心よりも前記プレートに近い側に位置している、
請求項1に記載のウエハ用サセプタ。 - 前記絶縁管は、前記導電性部材の外側に延び出す延出部を有している、
請求項1又は2に記載のウエハ用サセプタ。 - 前記ネジ穴のうち前記プレート側の開口には、前記加圧された前記シール部材が変形するのを許容するスペースが設けられている、
請求項1〜3のいずれか1項に記載のウエハ用サセプタ。 - 前記スペースの幅は、前記ネジ穴の内径よりも広くなっている、
請求項4に記載のウエハ用サセプタ。 - 前記シール部材支持部は、前記絶縁管と中心軸が一致するように設けられた環状突起部である、
請求項1〜5のいずれか1項に記載のウエハ用サセプタ。 - 前記ネジ穴には、ネジ緩み止め接着剤が塗布されている、
請求項1〜6のいずれか1項に記載のウエハ用サセプタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017103767 | 2017-05-25 | ||
JP2017103767 | 2017-05-25 | ||
PCT/JP2018/020125 WO2018216797A1 (ja) | 2017-05-25 | 2018-05-25 | ウエハ用サセプタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6420937B1 true JP6420937B1 (ja) | 2018-11-07 |
JPWO2018216797A1 JPWO2018216797A1 (ja) | 2019-06-27 |
Family
ID=64098757
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JP2018544132A Active JP6420937B1 (ja) | 2017-05-25 | 2018-05-25 | ウエハ用サセプタ |
Country Status (2)
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JP (1) | JP6420937B1 (ja) |
KR (1) | KR102445612B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019131115A1 (ja) * | 2017-12-28 | 2019-07-04 | 住友大阪セメント株式会社 | 静電チャック装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204502A (ja) * | 1998-01-13 | 1999-07-30 | Nkk Corp | 真空処理装置 |
JP2004050267A (ja) * | 2002-07-23 | 2004-02-19 | Ngk Insulators Ltd | 接合体の製造方法および接合体 |
JP2008270721A (ja) * | 2007-03-27 | 2008-11-06 | Tokyo Electron Ltd | 基板載置台及び基板処理装置 |
WO2013118781A1 (ja) * | 2012-02-08 | 2013-08-15 | 東京エレクトロン株式会社 | 静電チャック装置 |
JP2016143744A (ja) * | 2015-01-30 | 2016-08-08 | 日本特殊陶業株式会社 | 静電チャックおよびその製造方法 |
JP2016187056A (ja) * | 2016-07-22 | 2016-10-27 | 東京エレクトロン株式会社 | 載置台 |
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JP3154629B2 (ja) | 1994-11-24 | 2001-04-09 | キヤノン株式会社 | 電子写真感光体およびこれを用いた電子写真装置、装置ユニット |
JP4783213B2 (ja) * | 2005-06-09 | 2011-09-28 | 日本碍子株式会社 | 静電チャック |
JP5829509B2 (ja) * | 2011-12-20 | 2015-12-09 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
KR102684670B1 (ko) * | 2016-01-19 | 2024-07-15 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
-
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- 2018-05-25 JP JP2018544132A patent/JP6420937B1/ja active Active
- 2018-05-25 KR KR1020217003940A patent/KR102445612B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204502A (ja) * | 1998-01-13 | 1999-07-30 | Nkk Corp | 真空処理装置 |
JP2004050267A (ja) * | 2002-07-23 | 2004-02-19 | Ngk Insulators Ltd | 接合体の製造方法および接合体 |
JP2008270721A (ja) * | 2007-03-27 | 2008-11-06 | Tokyo Electron Ltd | 基板載置台及び基板処理装置 |
WO2013118781A1 (ja) * | 2012-02-08 | 2013-08-15 | 東京エレクトロン株式会社 | 静電チャック装置 |
JP2016143744A (ja) * | 2015-01-30 | 2016-08-08 | 日本特殊陶業株式会社 | 静電チャックおよびその製造方法 |
JP2016187056A (ja) * | 2016-07-22 | 2016-10-27 | 東京エレクトロン株式会社 | 載置台 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019131115A1 (ja) * | 2017-12-28 | 2019-07-04 | 住友大阪セメント株式会社 | 静電チャック装置 |
JPWO2019131115A1 (ja) * | 2017-12-28 | 2021-01-07 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP7259765B2 (ja) | 2017-12-28 | 2023-04-18 | 住友大阪セメント株式会社 | 静電チャック装置 |
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Publication number | Publication date |
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JPWO2018216797A1 (ja) | 2019-06-27 |
KR20210019118A (ko) | 2021-02-19 |
KR102445612B1 (ko) | 2022-09-20 |
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