CN109473349A - The processing method of chip - Google Patents

The processing method of chip Download PDF

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Publication number
CN109473349A
CN109473349A CN201811035733.3A CN201811035733A CN109473349A CN 109473349 A CN109473349 A CN 109473349A CN 201811035733 A CN201811035733 A CN 201811035733A CN 109473349 A CN109473349 A CN 109473349A
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CN
China
Prior art keywords
chip
sealing material
cutting slot
sealing
alignment
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Granted
Application number
CN201811035733.3A
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Chinese (zh)
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CN109473349B (en
Inventor
铃木克彦
伴祐人
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Disco Corp
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Disco Corp
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Publication of CN109473349A publication Critical patent/CN109473349A/en
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Publication of CN109473349B publication Critical patent/CN109473349B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/561—Batch processing
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/42—Plastics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
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  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The processing method of chip is provided.This method includes: cutting slot formation process, forms the cutting slot that depth is equivalent to the completion thickness of device chip along segmentation preset lines from the face side of chip；Sealing process is sealed the front of chip using sealing material；Grinding wafer to completion thickness exposes the sealing material in cutting slot by grinding process from the back side of chip；Alignment process shoots component by infrared ray and detects alignment mark from the face side that the face side of chip shoots chip through sealing material, the segmentation preset lines that should be laser machined according to alignment mark detection；Layer formation process is modified, the focal point of the laser beam of the wavelength for sealing material with permeability is located in the inside of the sealing material in cutting slot and irradiates laser beam to form modification layer；And segmentation process, it is to divide starting point to divide the wafer into each device chip that front and 4 sides are surrounded by sealing material to modify layer to the sealing material imparting external force in cutting slot.

Description

The processing method of chip
Technical field
The present invention relates to the processing methods of chip, are processed to chip and form 5S molded package.
Background technique
As the construction for the miniaturization and high-density installation for realizing the various devices such as LSI or NAND-type flash memory, for example, right Chip size packages obtained by device chip is packaged according to chip size (CSP) have been used for actual in use, simultaneously quilt It is widely used for mobile phone, smart phone etc..In addition, in recent years, in the CSP, develop and it is practical not merely with The CSP that entire side is also sealed the front sealing of chip by sealing material, that is, so-called 5S molded package.
Previous 5S molded package is made by following process.
(1) on the front of semiconductor wafer (hereinafter, being referred to generally as chip sometimes) formed be referred to as device (circuit) and The external connection terminals of convex block.
(2) chip is cut from the face side of chip along segmentation preset lines, forms depth and is equivalent to device chip Completion thickness cutting slot.
(3) front of chip is sealed using the sealing material containing carbon black.
(4) back side of chip is ground to the completion thickness of device chip and exposes the sealing material in cutting slot.
(5) since the front of chip is sealed by the sealing material containing carbon black, so by the outer peripheral portion of front wafer surface Sealing material removes and exposes the alignment marks such as target pattern, and it is pre- that implementation detects segmentation to be cut according to the alignment mark The alignment of alignment.
(6) according to alignment, chip is cut along segmentation preset lines from the face side of chip, to be divided into front The 5S molded package sealed with entire side by sealing material.
As described above, since the front of chip is sealed by the sealing material comprising carbon black, so being formed in front wafer surface Device etc. can not visually see completely.In order to solve this problem so as to be aligned, such as documented by above-mentioned (5) that Sample, the applicant develop following technology: the outer peripheral portion of the sealing material of front wafer surface is removed and makes target pattern etc. Alignment mark exposes, and segmentation preset lines to be cut are detected according to the alignment mark, thereby executing alignment (referring to Japanese Unexamined Patent Publication 2013-074021 bulletin and Japanese Unexamined Patent Publication 2016-015438 bulletin).
Patent document 1: Japanese Unexamined Patent Publication 2013-074021 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2016-015438 bulletin
However, in alignment methods described in above bulletin, need to replace incisory cutting tool and by side The work that the cutting tool of the wider width of edge finishing is installed on main shaft to remove the sealing material of the outer peripheral portion of chip Sequence, the replacement of cutting tool and the sealing material that outer peripheral portion is removed by edge trimming need to spend time and labor, deposit In the problem that productivity is poor.
Summary of the invention
The present invention is completed in view of the point, it is intended that providing can include through be coated on front wafer surface The sealing material of carbon black implements the processing method of the chip of alignment process.
According to the present invention, the processing method of chip is provided, which divides in a plurality of segmentation preset lines by intersecting to form Positive each region in be respectively formed with device, which has multiple convex blocks, and the processing method of the chip is characterized in that, With following process: cutting slot formation process, from the face side of the chip along the segmentation preset lines by cutting tool come Form the cutting slot that depth is equivalent to the completion thickness of device chip；Sealing process, implement the cutting slot formation process it Afterwards, the front comprising the cutting slot of the chip is sealed using sealing material；Grinding process, implement the sealing process it Afterwards, make the sealing material in the cutting slot from the back side of the chip by the completion thickness of the grinding wafer to the device chip Material exposes；Alignment process shoots component by infrared ray and penetrates from the face side of the chip after implementing the grinding process The sealing material shoots the face side of chip and detects alignment mark, and laser should be carried out by being detected according to the alignment mark The segmentation preset lines of processing；Modification layer formation process will have the sealing material after implementing the alignment process The focal point of the laser beam of the wavelength of permeability is located in the inside of the sealing material in the cutting slot, from the front of the chip Lateral edge the segmentation preset lines irradiation laser beam and the inside of the sealing material formed modification layer；And segmentation process, in reality It is to divide with the modification layer to the sealing material imparting external force in the cutting slot after having applied the modification layer formation process Each device chip that the chip is divided into front and 4 sides to be surrounded by the sealing material by point leads in the sealing process Cross the sealing material with the permeability for penetrating the infrared ray that is received of infrared ray shooting component to the front of the chip into Row sealing.
It is preferred that the shooting component of the infrared ray used in alignment process includes InGaAs capturing element.
The processing method of chip according to the present invention is penetrated close using the infrared ray for receiving infrared ray shooting component Closure material by chip front seal, by infrared ray shoot component through sealing material come detect be formed in chip to fiducial mark Note, implemented to be aligned according to alignment mark, therefore can simply implement alignment process, without as in the past by chip just The sealing material of the outer peripheral portion in face removes.
Therefore, the focal point of the laser beam of the wavelength for sealing material with permeability is located in close in cutting slot The inside of closure material and irradiate laser beam from the face side of chip, the inside of the sealing material in cutting slot forms modification layer, It can be to divide starting point to divide the wafer into each device core that front and 4 sides are surrounded by the sealing material with the modification layer Piece.
Detailed description of the invention
Fig. 1 is the perspective view of semiconductor wafer.
Fig. 2 is the perspective view for showing cutting slot formation process.
Fig. 3 is the perspective view for showing sealing process.
Fig. 4 is the side elevation in partial section for showing grinding process.
Fig. 5 is the cross-sectional view for showing alignment process.
(A) of Fig. 6 is the cross-sectional view for showing modification layer formation process, and (B) of Fig. 6 is to show putting for modification layer formation process Big cross-sectional view.
Fig. 7 is the perspective view of segmenting device.
(A) and (B) of Fig. 8 is the cross-sectional view for showing segmentation process.
Fig. 9 is the enlarged partial sectional view for showing the chip after implementing segmentation process.
Label declaration
10: cutting unit；11: semiconductor wafer；13: segmentation preset lines；14: cutting tool；15: device；16: alignment is single Member；17: electrode bumps；18,18A: shooting unit；20: sealing material；23: cutting slot；25: modification layer；26: grinding unit； 27: device chip；34: grinding emery wheel；38: grinding grinding tool；46: laser head (condenser)；50: segmenting device.
Specific embodiment
Hereinafter, referring to attached drawing, detailed description of embodiments of the present invention.Referring to Fig.1, it shows and fits through this The processing method of invention is come the face side perspective view for the semiconductor wafer (hereinafter, sometimes referred to simply as chip) 11 processed.
It is clathrate on the positive 11a of semiconductor wafer 11 to be formed with a plurality of segmentation preset lines (spacing track) 13.By The devices such as IC, LSI 15 are formed in each region that vertical segmentation preset lines 13 mark off.
There is multiple electrodes convex block (hereinafter, sometimes referred to simply as convex block) 17 on the front of each device 15, chip 11 is at it Device area 19 is included on front, is formed with the multiple devices 15 for being respectively provided with multiple convex blocks 17；And periphery remaining area 21, surround device area 19.
In the processing method of the chip of embodiment of the present invention, firstly, implementing cutting slot as the 1st process and forming work Sequence forms the completion that depth is equivalent to device chip by cutting tool along segmentation preset lines 13 from the face side of chip 11 The cutting slot of thickness.The cutting slot formation process is illustrated referring to Fig. 2.
Cutting unit 10 includes cutting tool 14, and the front end of main shaft 12 is installed in a manner of assemble and unassemble；And Aligned units 16 have shooting component (shooting unit) 18.Shooting unit 18 is shot in addition to having using visible light Except microscope and camera, also there is the infrared ray capturing element shot to infrared view.In the present embodiment, Using InGaAs capturing element as infrared ray capturing element.
Before implementing cutting slot formation process, firstly, implementing following alignment: shooting unit 18 is shot using visible light The front of chip 11, detection are formed in the alignment marks such as the target pattern of each device 15, are detected according to the alignment mark to be cut The segmentation preset lines 13 cut.
After implementing alignment, implements cutting slot formation process, make the high-speed rotating cutting tool on the direction arrow R1 14 cut from the positive 11a lateral edge of chip 11 segmentation preset lines 13 according to the depth for the completion thickness for being equivalent to device chip, And processing feeding is carried out on the direction arrow X1 to the chuck table (not shown) of attracting holding chip 11, thus along dividing It cuts preset lines 13 and forms cutting slot 23.
One side is according to the spacing of segmentation preset lines 13 by cutting unit 10 on the direction vertical with processing direction of feed X1 Index feed is carried out, successively implements the cutting slot formation process along the segmentation preset lines 13 upwardly extended in the 1st side on one side.
Then, after being rotated by 90 ° chuck table (not shown), along on 2nd direction vertical with the 1st direction The segmentation preset lines 13 of extension successively implement same cutting slot formation process.
After implementing cutting slot formation process, implement sealing process, as shown in figure 3, applying to the positive 11a of chip 11 Cloth sealing material 20 is sealed the positive 11a of the chip 11 comprising cutting slot 23 using sealing material.Since sealing material 20 has There is mobility, so sealing material 20 is filled into cutting slot 23 when implementing sealing process.
As sealing material 20, composition includes epoxy resin or epoxy resin+phenolic resin 10.3%, two by quality % Cilicon oxide filler 85.3%, carbon black 0.1~0.2%, other compositions 4.2~4.3%.As other compositions, for example, including metal Hydroxide, antimony trioxide, silica etc..
When the sealing material 20 using this composition come the positive 11a of coating wafer 11 to by the positive 11a of chip 11 When sealing, sealing material 20 is in black because including the minimal amount of carbon black in sealing material 20, therefore is generally difficult to penetrate Sealing material 20 sees the positive 11a of chip 11.
Here, carbon black is mixed into sealing material 20 primarily to the electrostatic breakdown of device 15 is prevented, at present in market Upper sale not yet is free of the sealing material of carbon black.
The coating method of sealing material 20 is not particularly limited, but sealing material 20 is preferably applied to the height of convex block 17 Until degree, sealing material 20 is etched followed by etching, convex block 17 is made to emerge.
After implementing sealing process, implements grinding process, chip 11 is ground to device from the back side side 11b of chip 11 The completion thickness of part chip exposes the sealing material 20 in cutting slot 23.
The grinding process is illustrated referring to Fig. 4.Front protecting band 22 is pasted on the positive 11a of chip 11, is utilized The chuck table 24 of grinding attachment carries out attracting holding to chip 11 across front protecting band 22.
Grinding unit 26 includes: main shaft 30 is accommodated in main shaft shell 28, by not shown in a manner of it can rotate Motor carry out rotation driving；Emery wheel mounting base 32 is fixed on the front end of main shaft 30；And grinding emery wheel 34, with Assemble and unassemble mode is installed on emery wheel mounting base 32.Grinding emery wheel 34 is by cricoid emery wheel base station 36 and cements in emery wheel base station Multiple grinding grinding tools 38 of 36 lower end periphery are constituted.
In grinding process, carry out chuck table 24 for example according to 300rpm on the direction shown in arrow a Rotation rotates grinding emery wheel 34 for example according to 6000rpm on the direction shown in arrow b, and to not shown Grinding unit feed mechanism driven and make be ground emery wheel 34 grinding grinding tool 38 contacted with the back side 11b of chip 11.
Then, emery wheel 34 will be ground on one side to measure as defined in grinding and feeding downwards according to the grinding and feeding speed of regulation, one While the back side 11b to chip 11 is ground.Chip 11 is measured using contact or contactless thickness measurement equipment on one side Thickness, on one side by chip 11 be ground to as defined in such as 100 μm of thickness, make the sealing material 20 being embedded in cutting slot 23 reveal Out.
After implementing grinding process, implement following alignment process: passing through infrared ray from the positive side 11a of chip 11 Shooting component shoots the positive 11a of chip 11 in a manner of through sealing material 20, and detection is being formed in chip 11 just It is predetermined to detect the segmentation that should be laser machined according to these alignment marks for the alignment marks such as at least two target patterns in face Line 13.
The alignment process is described in detail referring to Fig. 5.Before implementing alignment process, by the back side 11b of chip 11 Side is pasted onto peripheral part and is installed on the dicing tape T of ring-shaped frame F.
In alignment process, as shown in figure 5, utilizing 40 pairs of crystalline substances of chuck table of laser processing device across dicing tape T Piece 11 carries out attracting holding, exposes the sealing material 20 for sealing the positive 11a of chip 11 upwards.Then, fixture is utilized 42 couples of ring-shaped frame F are clamped and are fixed.
In alignment process, laser processing device same as the shooting unit 18 of cutting apparatus shown in Fig. 2 is utilized The infrared ray capturing element of capturing element 18A shoots the positive 11a of chip 11.Sealing material 20 is by making shooting unit 18 The sealing material that penetrates of the infrared ray that is received of infrared ray capturing element constitute, therefore, infrared ray capturing element can be passed through To detect the alignment marks such as at least two target patterns of positive 11a for being formed in chip 11.
As infrared ray capturing element, it is preferred to use with higher sensitivity InGaAs capturing element.It is preferred that shooting unit 18A With can be to the exposure device (exposure) that time for exposure etc. is adjusted.
Then, make chuck table 40 carry out θ rotation so as to make to connect straight line obtained by these alignment marks and process into It is parallel to direction, then make chuck table 40 according to alignment mark and divide the distance between centers of preset lines 13 with add It is moved on work direction of feed X1 (referring to (A) of Fig. 6) vertical direction, to detect that the segmentation that should be laser machined is predetermined Line 13.
After implementing alignment process, implementing modification layer formation process will be for sealing material as shown in (A) of Fig. 6 The focal point of the laser beam LB of 20 wavelength (such as 1064nm) with permeability is located in the sealing material 20 in cutting slot 23 Inside and from the positive 11a lateral edge of chip 11 divide preset lines 13 from the laser head (condenser) 46 of laser processing device into Row irradiation, carries out processing feeding to chuck table 40 on the direction arrow X1, thus the sealing material 20 in cutting slot 23 Inside form shown in (B) of Fig. 6 modification layer 25.
After successively implementing the modification layer formation process along the segmentation preset lines 13 upwardly extended in the 1st side, make Chuck table 40 is rotated by 90 °, and is successively implemented along the segmentation preset lines 13 upwardly extended in 2nd side vertical with the 1st direction The modification layer formation process.
After implementing modification layer formation process, implement segmentation process, using segmenting device shown in Fig. 7 50 to chip 11 assign external force, and chip 11 is divided into each device chip 27.Segmenting device 50 shown in Fig. 7 includes frame retention member 52, ring-shaped frame F is kept；And with extension component 54, dicing tape T is extended, which is installed on Ring-shaped frame F, ring-shaped frame F are maintained on T frame retention member 52.
Frame retention member 52 by cricoid frame retention feature 56 and the periphery for being disposed in frame retention feature 56 work It is constituted for multiple fixtures 58 of fixing component.The upper surface of frame retention feature 56 forms the mounting surface of mounting ring-shaped frame F 56a loads ring-shaped frame F on mounting surface 56a.
Then, the ring-shaped frame F being positioned on mounting surface 56a is fixed on frame retention member 56 by fixture 58.In this way The frame retention member 52 of composition can be moved in the up-down direction by band extension component 54 bearing.
There is the extension drum 60 for the inside for being disposed in cricoid frame retention feature 56 with extension component 54.Extend drum 60 It is closed by lid 62 upper end.The extension drum 60 has internal diameter smaller than the internal diameter of ring-shaped frame F and bigger than the outer diameter of chip 11, In, which is pasted on dicing tape T, and dicing tape T is installed on ring-shaped frame F.
Extension drum 60 has the support lug 64 being formed as one in its lower end.Band extension component 54 also has drive member 66, which move cricoid frame retention feature 56 in the up-down direction.The drive member 66 is by being disposed in branch The multiple cylinders 68 held on flange 64 are constituted, and the lower surface of piston rod 70 and frame retention feature 56 links.
Make cricoid frame retention feature 56 in base position and extension bits by the drive member 66 that multiple cylinders 68 are constituted Moved along the vertical direction between setting, wherein the base position be cricoid frame retention feature 56 mounting surface 56a with as expansion The front for opening up the lid 62 of the upper end of drum 60 is the position of roughly same height, which is than extending the upper end of drum 60 on the lower The position of the defined amount of side.
It is said referring to the segmentation process of Fig. 8 chip 11 implemented to the segmenting device constituted with upper type 50 is used It is bright.As shown in (A) of Fig. 8, the ring-shaped frame F that chip 11 is carry by dicing tape T is positioned in frame retention feature 56 On mounting surface 56a, and it is fixed on frame retention feature 56 by fixture 58.At this point, frame retention feature 56 is positioned in it The upper end of mounting surface 56a and extension drum 60 is the base position of roughly same height.
Then, cylinder 68 is driven and frame retention feature 56 is made to drop to expanding location shown in (B) of Fig. 8. As a result, decline the ring-shaped frame F being fixed on the mounting surface 56a of frame retention feature 56, therefore is installed on ring-shaped frame F's Dicing tape T is abutted with the upper edge of extension drum 60 and is mainly extended in the radial direction.
As a result, to the radial effect drawing force of chip 11 for being pasted on dicing tape T.When in this way to chip When 11 radial effect drawing force, the modification layer 25 that chip is formed in sealing material 20 along segmentation preset lines 13 is point Cutting starting point cuts off chip as shown in the enlarged drawing of Fig. 9 along modification layer 25, is divided into front and 4 side quilts Each device chip 27 that sealing material 20 surrounds.

Claims (2)

1. a kind of processing method of chip, the chip is in the positive each region divided by a plurality of segmentation preset lines intersected to form It is inside respectively formed with device, which has multiple convex blocks,
The processing method of the chip is characterized in that thering is following process:
It is suitable along the segmentation preset lines to form depth by cutting tool from the face side of the chip for cutting slot formation process In the cutting slot of the completion thickness of device chip；
The chip is included the cutting slot using sealing material after implementing the cutting slot formation process by sealing process Front sealing；
Grinding process, after implementing the sealing process, from the back side of the chip by the grinding wafer to the device chip Completion thickness and expose the sealing material in the cutting slot；
Alignment process, after implementing the grinding process, being penetrated by infrared ray shooting component from the face side of the chip should Sealing material shoots the face side of chip and detects alignment mark, and laser should be carried out by, which being detected according to the alignment mark, adds The segmentation preset lines of work；
Layer formation process is modified, after implementing the alignment process, by the wavelength for the sealing material with permeability The focal point of laser beam is located in the inside of the sealing material in the cutting slot, pre- along the segmentation from the face side of the chip Alignment irradiates laser beam and forms modification layer in the inside of the sealing material；And
Segmentation process, after implementing the modification layer formation process, to the sealing material imparting external force in the cutting slot It is each device core divided starting point and be divided into front and 4 sides to be surrounded by the sealing material chip with the modification layer Piece,
In the sealing process, by having the sealing for making the infrared ray shoot the permeability that the infrared ray that component is received penetrates Material is sealed the front of the chip.
2. the processing method of chip according to claim 1, wherein
The infrared ray shooting component used in the alignment process includes InGaAs capturing element.
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